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Oxygenated amorphous carbon for resistive memory applications
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Ultra‐Transparent, Flexible Single‐walled Carbon Nanotube Non‐volatile Memory Device with an Oxygen‐decorated Graphene Electrode
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Fabrication of Flexible, All‐Reduced Graphene Oxide Non‐Volatile Memory Devices
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The Route to Functional Graphene Oxide
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Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids
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Studies on resistive switching characteristics of aluminum/graphene oxide/semiconductor nonvolatile memory cells
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Diamond-like amorphous carbon
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Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
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Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions
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Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes
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The Impact of Functionalization on the Stability, Work Function, and Photoluminescence of Reduced Graphene Oxide
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Two-Terminal Nonvolatile Memories Based on Single-Walled Carbon Nanotubes
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Helical microtubules of graphitic carbon
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Chemically homogeneous and thermally reversible oxidation of epitaxial graphene
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Graphene oxide as a chemically tunable platform for optical applications
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Nanoionics-based resistive switching memories
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Room-temperature metastability of multilayer graphene oxide films
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Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material
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Memory leads the way to better computing
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Graphene and its derivatives: switching ON and OFF
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Nonvolatile resistive switching in graphene oxide thin films
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Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite
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Analysis on switching mechanism of graphene oxide resistive memory device
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The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories
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Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application
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Forming free resistive switching in graphene oxide thin film for thermally stable nonvolatile memory applications
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Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications
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Synaptic electronics: materials, devices and applications
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Resistance switching at the nanometre scale in amorphous carbon
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Raman spectroscopy of amorphous, nanostructured, diamond–like carbon, and nanodiamond
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Raman spectroscopy of hydrogenated amorphous carbons
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Chemically Induced Conductance Switching in Carbon Nanotube Circuits
inferredcites →https://doi.org/10.1109/led.2011.2132750openalex-snapshot
Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices
inferredcites →https://doi.org/10.1109/led.2015.2457243openalex-snapshot
Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices
inferredcites →https://doi.org/10.1116/1.2183249openalex-snapshot
Electron inelastic mean free path and dielectric properties of a-boron, a-carbon, and their nitrides as determined by quantitative analysis of reflection electron energy loss spectroscopy
inferredcites →https://doi.org/10.1126/science.289.5476.94openalex-snapshot
Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing
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Mechanism of Different Switching Directions in Graphene Oxide Based RRAM
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Creattion of silicon-carbon films by induction assisted plasma chemical deposition
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Tetrahedral amorphous carbon resistive memories with graphene-based electrodes
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Memristive Systems Based on Two-Dimensional Materials
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Memristors Based on 2D Monolayer Materials
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