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Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.201000432openalex-snapshot
Fabrication of ultra‐high‐density InAs quantum dots using the strain‐compensation technique
inferredcites →https://doi.org/10.1016/j.solmat.2010.04.040openalex-snapshot
Multi-stacked quantum dot solar cells fabricated by intermittent deposition of InGaAs
inferredcites →https://doi.org/10.1063/1.2193063openalex-snapshot
Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band
inferredcites →https://doi.org/10.1063/1.2352809openalex-snapshot
Improved optical properties of InAs quantum dots grown with an As2 source using molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.2747195openalex-snapshot
Emitter degradation in quantum dot intermediate band solar cells
inferredcites →https://doi.org/10.1063/1.2903699openalex-snapshot
Effect of strain compensation on quantum dot enhanced GaAs solar cells
inferredcites →https://doi.org/10.1063/1.2973398openalex-snapshot
Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
inferredcites →https://doi.org/10.1063/1.3000456openalex-snapshot
Suppressed bimodal size distribution of InAs quantum dots grown with an As2 source using molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.3533423openalex-snapshot
Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
inferredcites →https://doi.org/10.1103/physrevlett.78.5014openalex-snapshot
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
inferredcites →https://doi.org/10.1116/1.3289124openalex-snapshot
Highly stacked InGaAs quantum dot structures grown with two species of As
inferredcites →https://doi.org/10.1143/jjap.49.030211openalex-snapshot
Highly Stacked and High-Quality Quantum Dots Fabricated by Intermittent Deposition of InGaAs

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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A Comparative Study on the Charge Transfer Mechanism of Electron Transport Layers Using Zno Hierarchical Structures and Zno Nanorods
inferred← citeshttps://doi.org/10.1002/9781119827634.ch5openalex-snapshot
Semiconductor Quantum Dot Solar Cells: Construction, Working Principle, and Current Development
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Halide Perovskite Solar Cells with Biocompatibility
inferred← citeshttps://doi.org/10.1002/pip.2751openalex-snapshot
Limiting efficiencies for intermediate band solar cells with partial absorptivity: the case for a quantum ratchet
inferred← citeshttps://doi.org/10.1002/pip.2815openalex-snapshot
Capping vertically aligned InGaAs/GaAs(Sb) quantum dots with a AlGaAsSb spacer layer in intermediate‐band solar cell devices
inferred← citeshttps://doi.org/10.1002/pip.3110openalex-snapshot
Analysis of nonradiative recombination in quantum dot solar cells and materials
inferred← citeshttps://doi.org/10.1002/pssa.202400849openalex-snapshot
Nanostructured Quadric‐Confined Quantum Dot–Quantum Well Kesterite Solar Cell: A Pathway for Cost‐Effective Photosensitive Devices
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Quantum Dot-Based Thin-Film III–V Solar Cells
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Scanning Probe Microscopy in Practical Diagnostic: 3D Topography Imaging and Nanometrology
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Incorporation of Different Quantum Superlattices in a Single Junction GaAs Solar Cell: A Comparative Study
inferred← citeshttps://doi.org/10.1007/s00339-020-03654-8openalex-snapshot
Experimental and theoretical study of thermally activated carrier transfer in InAs/GaAs multilayer quantum dots
inferred← citeshttps://doi.org/10.1007/s10008-026-06727-5openalex-snapshot
Band-edge modulated hierarchical ZnO nanorod-nanosheet photoanodes with reduced surface recombination for enhanced photoconversion efficiency
inferred← citeshttps://doi.org/10.1007/s10854-015-3318-3openalex-snapshot
Band alignment tuned by 3-PPA SAMs interfacial modification to enhance the conversion efficiency of ZnO/ZnS heterostructure quantum dots sensitized solar cells
inferred← citeshttps://doi.org/10.1016/b978-0-323-93940-9.00128-6openalex-snapshot
An Overview of Dye-Sensitized Solar Cells
inferred← citeshttps://doi.org/10.1016/j.apsusc.2014.03.171openalex-snapshot
Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As2 gas flux
inferred← citeshttps://doi.org/10.1016/j.compscitech.2019.05.002openalex-snapshot
Effect of manganese dopants on defects, nano-strain, and photovoltaic performance of Mn–CdS/CdSe nanocomposite-sensitized ZnO nanowire solar cells
inferred← citeshttps://doi.org/10.1016/j.electacta.2014.05.021openalex-snapshot
Photoanodes with mesoporous TiO2 beads and nanoparticles for enhanced performance of CdS/CdSe quantum dot co-sensitized solar cells
inferred← citeshttps://doi.org/10.1016/j.heliyon.2023.e19312openalex-snapshot
External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure
inferred← citeshttps://doi.org/10.1016/j.jallcom.2026.187144openalex-snapshot
Experimental characterization of near-infrared absorption properties of InAs/GaAs quantum dots
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2012.11.008openalex-snapshot
InGaP solar cells fabricated using solid-source molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2012.12.065openalex-snapshot
In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2015.02.043openalex-snapshot
Strain-compensated Ge/Si1−C quantum dots with Si mediating layers grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2019.02.031openalex-snapshot
Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells
inferred← citeshttps://doi.org/10.1016/j.jics.2026.102657openalex-snapshot
Modeling and simulation of the InGaAs/Si quantum dot structure for solar cells applications
inferred← citeshttps://doi.org/10.1016/j.jiec.2019.04.042openalex-snapshot
Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile
inferred← citeshttps://doi.org/10.1016/j.jiec.2019.05.018openalex-snapshot
Binary redox electrolytes used in dye-sensitized solar cells
inferred← citeshttps://doi.org/10.1016/j.jlumin.2017.04.024openalex-snapshot
In/Ga intermixing effect on high-stacked InAs/In 0.11 Ga 0.89 As/GaAs self-assembled quantum-dots solar cells using photoluminescence spectroscopy and scanning near-field optical microscopy
inferred← citeshttps://doi.org/10.1016/j.materresbull.2025.113581openalex-snapshot
Crystal and electrical properties of polycrystalline In1−xGaxAs thin films directly formed on insulators
inferred← citeshttps://doi.org/10.1016/j.mee.2020.111367openalex-snapshot
Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure
inferred← citeshttps://doi.org/10.1016/j.mssp.2014.05.053openalex-snapshot
Nanostructured thin films based on TiO2 and/or SiC for use in photoelectrochemical cells: A review of the material characteristics, synthesis and recent applications
inferred← citeshttps://doi.org/10.1016/j.optmat.2024.116576openalex-snapshot
Fabrication of InAs 2D submonolayer nanostructure-based solar cells with InGaAs/GaAsSb double-well structure
inferred← citeshttps://doi.org/10.1016/j.rser.2013.07.011openalex-snapshot
Review on nanostructured photoelectrodes for next generation dye-sensitized solar cells
inferred← citeshttps://doi.org/10.1016/j.solmat.2016.12.024openalex-snapshot
InGaAs and GaAs quantum dot solar cells grown by droplet epitaxy
inferred← citeshttps://doi.org/10.1016/j.solmat.2017.03.033openalex-snapshot
Nanostructured functional materials for advanced three-dimensional (3D) solar cells
inferred← citeshttps://doi.org/10.1016/j.solmat.2017.12.014openalex-snapshot
Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off
inferred← citeshttps://doi.org/10.1016/j.solmat.2018.07.028openalex-snapshot
Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2023.129593openalex-snapshot
Preparation of multistage heterojunction composite film for round-the-clock photocathodic protection
inferred← citeshttps://doi.org/10.1021/am500209fopenalex-snapshot
Hierarchically Structured ZnO Nanorods–Nanosheets for Improved Quantum-Dot-Sensitized Solar Cells
inferred← citeshttps://doi.org/10.1021/cr400675mopenalex-snapshot
Electrolytes in Dye-Sensitized Solar Cells
inferred← citeshttps://doi.org/10.1021/jp412525kopenalex-snapshot
Microsphere Light-Scattering Layer Assembled by ZnO Nanosheets for the Construction of High Efficiency (>5%) Quantum Dots Sensitized Solar Cells
inferred← citeshttps://doi.org/10.1039/c3ee41056kopenalex-snapshot
Architectured ZnO photoelectrode for high efficiency quantum dot sensitized solar cells
inferred← citeshttps://doi.org/10.1039/c3ta11056gopenalex-snapshot
Constructing ZnO nanorod array photoelectrodes for highly efficient quantum dot sensitized solar cells
inferred← citeshttps://doi.org/10.1039/c3ta13460aopenalex-snapshot
Mesoporous TiO2 beads for high efficiency CdS/CdSe quantum dot co-sensitized solar cells
inferred← citeshttps://doi.org/10.1039/c4ta04534copenalex-snapshot
A highly efficient (>6%) Cd 1−x Mn x Se quantum dot sensitized solar cell
inferred← citeshttps://doi.org/10.1039/c5nr04710bopenalex-snapshot
Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules
inferred← citeshttps://doi.org/10.1039/d0ra01031fopenalex-snapshot
Poly(ethylene glycol)–poly(propylene glycol)–poly(ethylene glycol) and polyvinylidene fluoride blend doped with oxydianiline-based thiourea derivatives as a novel and modest gel electrolyte system for dye-sensitized solar cell applications
inferred← citeshttps://doi.org/10.1051/e3sconf/20171603007openalex-snapshot
Novel Concepts for High-Efficiency Lightweight Space Solar Cells
inferred← citeshttps://doi.org/10.1063/1.4755757openalex-snapshot
InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.4811681openalex-snapshot
Theoretical analysis of multilevel intermediate-band solar cells using a drift diffusion model
inferred← citeshttps://doi.org/10.1063/1.4812567openalex-snapshot
InGaAs quantum dot superlattice with vertically coupled states in InGaP matrix
inferred← citeshttps://doi.org/10.1063/1.4822322openalex-snapshot
Challenges to the concept of an intermediate band in InAs/GaAs quantum dot solar cells
inferred← citeshttps://doi.org/10.1063/1.4916561openalex-snapshot
Intermediate band solar cells: Recent progress and future directions
inferred← citeshttps://doi.org/10.1063/1.4919381openalex-snapshot
Non-resonant below-bandgap two-photon absorption in quantum dot solar cells
inferred← citeshttps://doi.org/10.1063/1.4961046openalex-snapshot
Theory of photovoltaic characteristics of semiconductor quantum dot solar cells
inferred← citeshttps://doi.org/10.1063/1.4985722openalex-snapshot
Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells
inferred← citeshttps://doi.org/10.1063/5.0145361openalex-snapshot
Dependence of quantum dot solar cell parameters on the number of quantum dot layers
inferred← citeshttps://doi.org/10.1088/0022-3727/48/36/363001openalex-snapshot
Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
inferred← citeshttps://doi.org/10.1088/0957-4484/27/8/085605openalex-snapshot
Controllable in situ photo-assisted chemical deposition of CdSe quantum dots on ZnO/CdS nanorod arrays and its photovoltaic application
inferred← citeshttps://doi.org/10.1088/1361-6463/abba5fopenalex-snapshot
Optical absorption coefficient calculations of GaSb/GaAs quantum dots for intermediate band solar cell applications
inferred← citeshttps://doi.org/10.1088/1361-6641/ab7774openalex-snapshot
Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots
inferred← citeshttps://doi.org/10.1103/6hxs-dvn7openalex-snapshot
Coupling effects between widely separated layers of self-assembled quantum dots
inferred← citeshttps://doi.org/10.1103/physrevb.111.035419openalex-snapshot
Arbitrary vector beam generation in semiconductor quantum dots
inferred← citeshttps://doi.org/10.1103/physrevlett.125.247703openalex-snapshot
Demonstration of a GaSb/GaAs Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point
inferred← citeshttps://doi.org/10.1109/access.2020.3039457openalex-snapshot
Projected Performance of InGaAs/GaAs Quantum Dot Solar Cells: Effects of Cap and Passivation Layers
inferred← citeshttps://doi.org/10.1109/drc.2015.7175591openalex-snapshot
Robust electrical characteristics of multiple-layer InAs/GaAs quantum-dot diodes under gamma irradiation
inferred← citeshttps://doi.org/10.1109/edtm53872.2022.9798209openalex-snapshot
Optimizing the positions of quantum dot layers to increase the light absorption in quantum dot solar cells with light trapping structure
inferred← citeshttps://doi.org/10.1109/jphotov.2014.2299402openalex-snapshot
Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells
inferred← citeshttps://doi.org/10.1109/pvsc.2013.6744159openalex-snapshot
Miniband formation in InGaAs quantum dot superlattice with InGaP matrix for application to intermediate-band solar cells
inferred← citeshttps://doi.org/10.1109/pvsc.2014.6925535openalex-snapshot
Radiation response of the fill-factor for GaAs solar cells with InGaAs quantum dot layers
inferred← citeshttps://doi.org/10.1109/pvsc.2015.7355811openalex-snapshot
Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances
inferred← citeshttps://doi.org/10.1109/pvsc40753.2019.8981170openalex-snapshot
Enhancement of EQE for MBE grown InAs/GaAs Quantum Dot Solar Cell with Back Reflector
inferred← citeshttps://doi.org/10.1117/1.jpe.12.022203openalex-snapshot
Resonant absorption for multilayer quantum well and quantum dot solar cells
inferred← citeshttps://doi.org/10.1117/1.jpe.15.025501openalex-snapshot
Comparative study of InAs/GaAs quantum dots and GaSb/GaAs quantum rings for recombination suppression in thin-film intermediate band solar cells
inferred← citeshttps://doi.org/10.1117/12.2051881openalex-snapshot
Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures
inferred← citeshttps://doi.org/10.1140/epjp/s13360-025-05982-1openalex-snapshot
The impact of effective mass mismatch and quantum dot size on the interband absorption and sub-bandgap photocurrent of box-shaped InAs/GaAs quantum dot-intermediate band solar cells
inferred← citeshttps://doi.org/10.1186/s11671-016-1457-yopenalex-snapshot
Recent Progress Towards Quantum Dot Solar Cells with Enhanced Optical Absorption
inferred← citeshttps://doi.org/10.1186/s11671-023-03839-zopenalex-snapshot
Performance optimization of In(Ga)As quantum dot intermediate band solar cells
inferred← citeshttps://doi.org/10.1364/ao.396590openalex-snapshot
Thin-film InAs/GaAs quantum dot solar cell with planar and pyramidal back reflectors
inferred← citeshttps://doi.org/10.1364/oe.22.00a359openalex-snapshot
Type II GaSb quantum ring solar cells under concentrated sunlight
inferred← citeshttps://doi.org/10.1587/transele.e99.c.346openalex-snapshot
Nanophotonic Devices Based on Semiconductor Quantum Nanostructures
inferred← citeshttps://doi.org/10.17576/mjas-2017-2105-14openalex-snapshot
INCORPORATION OF GRAPHENE INTO COUNTER ELECTRODE TO ENHANCE THE PERFORMANCE OF DYE-SENSITIZED SOLAR CELLS
inferred← citeshttps://doi.org/10.31349/revmexfis.68.031002openalex-snapshot
In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers
inferred← citeshttps://doi.org/10.3390/molecules26092638openalex-snapshot
Quantum Dot Sensitized Solar Cell: Photoanodes, Counter Electrodes, and Electrolytes
inferred← citeshttps://doi.org/10.3390/nano11020344openalex-snapshot
Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells
inferred← citeshttps://doi.org/10.3390/photonics6020046openalex-snapshot
Modeling the Output Performance of Al0.3Ga0.7As/InP/Ge Triple-Junction Solar Cells for a Venus Orbiter Space Station
inferred← citeshttps://doi.org/10.3402/nano.v4i0.22578openalex-snapshot
Semiconductor quantum dot-sensitized solar cells
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Recent Advances in the Synthesis and Characterization of Chalcogenide Nanoparticles
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Optical transition and carrier relaxation in a type-II InAs/GaAsSb quantum dot layer
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