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Properties of HfO 2 /La 2 O 3 nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0368-2048(76)81003-1openalex-snapshot

Satellites in ESCA inner-shell spectra of 3d0 transition metal complexes

inferredcites →https://doi.org/10.1016/j.apsusc.2008.09.070openalex-snapshot

Defect states in HfO2 on deposited on Ge(111) and Ge(100) substrates

inferredcites →https://doi.org/10.1016/s0169-4332(01)00841-8openalex-snapshot

Characterization of high-k gate dielectric/silicon interfaces

inferredcites →https://doi.org/10.1017/cbo9780511599828openalex-snapshot

Doping in III-V Semiconductors

inferredcites →https://doi.org/10.1021/cm3001199openalex-snapshot

Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition

inferredcites →https://doi.org/10.1021/nl051265kopenalex-snapshot

Conversion between Hexagonal GaN and β-Ga2O3 Nanowires and Their Electrical Transport Properties

inferredcites →https://doi.org/10.1023/a:1014774917464openalex-snapshot

X-ray Photoelectron Spectra of La0.7Ca0.3MnO3 and La0.7Ca0.3Mn0.97Cu0.03O3 Perovskite Oxides

inferredcites →https://doi.org/10.1038/nature10970openalex-snapshot

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

inferredcites →https://doi.org/10.1063/1.1290269openalex-snapshot

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

inferredcites →https://doi.org/10.1063/1.1633976openalex-snapshot

Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3

inferredcites →https://doi.org/10.1063/1.1861122openalex-snapshot

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

inferredcites →https://doi.org/10.1063/1.2213170openalex-snapshot

Band offsets of high K gate oxides on III-V semiconductors

inferredcites →https://doi.org/10.1063/1.3369388openalex-snapshot

Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide

inferredcites →https://doi.org/10.1063/1.3517485openalex-snapshot

Origin of high solubility of silicon in La2O3: A first-principles study

inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot

Ferroelectricity in hafnium oxide thin films

inferredcites →https://doi.org/10.1063/1.3657521openalex-snapshot

Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

inferredcites →https://doi.org/10.1063/1.369664openalex-snapshot

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

inferredcites →https://doi.org/10.1088/0268-1242/22/5/011openalex-snapshot

Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

inferredcites →https://doi.org/10.1103/physrevb.28.1061openalex-snapshot

Electronic band structure of stishovite (tetragonal Si O2 )

inferredcites →https://doi.org/10.1103/physrevb.65.233106openalex-snapshot

First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide

inferredcites →https://doi.org/10.1103/physrevb.78.012102openalex-snapshot

First-principles study on doping and phase stability of HfO2

inferredcites →https://doi.org/10.1103/physrevb.78.132102openalex-snapshot

Structural disorders in an amorphous HfO2 film probed by x-ray absorption fine structure analysis

inferredcites →https://doi.org/10.1103/physrevlett.111.025502openalex-snapshot

Mg Doping Affects Dislocation Core Structures in GaN

inferredcites →https://doi.org/10.1116/1.3609974openalex-snapshot

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

inferredcites →https://doi.org/10.1116/1.3683057openalex-snapshot

Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

inferredcites →https://doi.org/10.1116/1.4866378openalex-snapshot

Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide

inferredcites →https://doi.org/10.1143/jjap.42.1222openalex-snapshot

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor

inferredcites →https://doi.org/10.1143/jjap.50.021001openalex-snapshot

Capacitance–Voltage Characteristics of Al 2 O 3 /AlGaN/GaN Structures and State Density Distribution at Al 2 O 3 /AlGaN Interface

inferredcites →https://doi.org/10.1149/1.1756541openalex-snapshot

Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition

inferredcites →https://doi.org/10.1149/1.2960995openalex-snapshot

Process and Material Properties of HfLaO[sub x] Prepared by Atomic Layer Deposition

inferredcites →https://doi.org/10.1149/1.3264622openalex-snapshot

Low Hysteresis Dispersion La[sub 2]O[sub 3] AlGaN∕GaN MOS-HEMTs

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4182606openalex-extracted

Enhanced Electrical Performance of in Doped LaPO4 as an Interfacial Layer of Cu/In-LaPO4/n-Si Structured Type Schottky Barrier Diode

inferred← citeshttps://doi.org/10.1007/s10853-017-1293-1openalex-snapshot

Thermal stability, structural and electrical characteristics of the modulated HfO2/Al2O3 films fabricated by atomic layer deposition

inferred← citeshttps://doi.org/10.1007/s10854-023-09858-xopenalex-snapshot

Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode

inferred← citeshttps://doi.org/10.1007/s11664-019-07790-7openalex-snapshot

Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

inferred← citeshttps://doi.org/10.1016/j.jece.2018.11.034openalex-snapshot

Particularities of trichloroethylene photocatalytic degradation over crystalline RbLaTa2O7 nanowire bundles grown by solid-state synthesis route

inferred← citeshttps://doi.org/10.1016/j.matlet.2016.12.137openalex-snapshot

Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy

inferred← citeshttps://doi.org/10.1021/acsami.9b07090openalex-snapshot

PEALD of HfO 2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

inferred← citeshttps://doi.org/10.1039/d3nr00909bopenalex-snapshot

Process temperature-dependent interface quality and Maxwell–Wagner interfacial polarization in atomic layer deposited Al 2 O 3 /TiO 2 nanolaminates for energy storage applications

inferred← citeshttps://doi.org/10.1109/led.2017.2722002openalex-snapshot

Enhancement-Mode GaN MIS-HEMTs With LaHfOxGate Insulator for Power Application

inferred← citeshttps://doi.org/10.1116/1.5131638openalex-snapshot

Role of template layers for heteroepitaxial growth of lanthanum oxide on GaN(0001) via atomic layer deposition

inferred← citeshttps://doi.org/10.3390/coatings16020198openalex-snapshot

Urushiol-Based Antimicrobial Coatings for Lacquer Art Applications: A Review of Mechanisms, Durability, and Safety

inferred← citeshttps://doi.org/10.3390/micro6030048openalex-snapshot

Performance of κ-Ga2O3/GaN HEMTs and Normally off Operation by p-GaN Gate

inferred← citeshttps://doi.org/10.7282/t35q4z8kopenalex-snapshot

Deposition, characterization, patterning and mechanistic study of inorganic resists for next-generation nanolithography

inferred← citeshttps://doi.org/10.7567/apex.9.021203openalex-snapshot

Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor

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