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Two-dimensional boron–nitrogen–carbon monolayers with tunable direct band gaps

https://doi.org/10.1039/c5nr03344f
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Prediction of Silicon-Based Layered Structures for Optoelectronic Applications
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Electronic Structures of BC2N Nanoribbons
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Quantum Dots and Nanoroads of Graphene Embedded in Hexagonal Boron Nitride
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How Much N-Doping Can Graphene Sustain?
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BN White Graphene with “Colorful” Edges: The Energies and Morphology
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Polymorphism of Two-Dimensional Boron
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Single-Layer MoS 2 Phototransistors
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Two-Dimensional Boron Monolayer Sheets
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Graphene Analogues of BN: Novel Synthesis and Properties
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Order–disorder transition in a two-dimensional boron–carbon–nitride alloy
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Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers
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Atomic layers of hybridized boron nitride and graphene domains
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Thermoresponsive actuation enabled by permittivity switching in an electrostatically anisotropic hydrogel
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Self-modulated band gap in boron nitride nanoribbons and hydrogenated sheets
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Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying
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Hybrid functionals based on a screened Coulomb potential
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Detailed Balance Limit of Efficiency of p-n Junction Solar Cells
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An effective structure prediction method for layered materials based on 2D particle swarm optimization algorithm
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Projector augmented-wave method
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Consistent methodology for calculating surface and interface energies
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From ultrasoft pseudopotentials to the projector augmented-wave method
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Energy-gap modulation of BN ribbons by transverse electric fields: First-principles calculations
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First-principles calculations of the ferroelastic transition between rutile-type and CaCl 2 -type SiO 2 at high pressures
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Dependence of Curie temperature on the thickness of an ultrathin ferroelectric film
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Electronic and magnetic properties of a BN sheet decorated with hydrogen and fluorine
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Crystal structure prediction via particle-swarm optimization
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Low-energy silicon allotropes with strong absorption in the visible for photovoltaic applications
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Boron aggregation in the ground states of boron-carbon fullerenes
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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
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Predicted Novel High-Pressure Phases of Lithium
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Substitutional Alloy of Bi and Te at High Pressure
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Cagelike Diamondoid Nitrogen at High Pressures
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Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach
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Global Structural Optimization of Tungsten Borides
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First-Principles Theory of Quasiparticles: Calculation of Band Gaps in Semiconductors and Insulators
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Generalized Gradient Approximation Made Simple
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Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
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What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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