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Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect

https://doi.org/10.1039/c8cp03740j
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adma.201201361openalex-snapshot
GaS and GaSe Ultrathin Layer Transistors
inferredcites →https://doi.org/10.1002/adma.201706656openalex-snapshot
Oxide Thin‐Film Electronics using All‐MXene Electrical Contacts
inferredcites →https://doi.org/10.1002/admt.201600197openalex-snapshot
Quantum Confinement and Gas Sensing of Mechanically Exfoliated GaSe
inferredcites →https://doi.org/10.1002/chem.201604168openalex-snapshot
Layered Post‐Transition‐Metal Dichalcogenides (X−M−M−X) and Their Properties
inferredcites →https://doi.org/10.1016/0375-9601(75)90729-xopenalex-snapshot
Optical absorption edge of a new GaSe polytype
inferredcites →https://doi.org/10.1017/cbo9780511805776openalex-snapshot
Electronic Transport in Mesoscopic Systems
inferredcites →https://doi.org/10.1021/acs.chemmater.5b04899openalex-snapshot
Monolayer Phosphorene–Metal Contacts
inferredcites →https://doi.org/10.1021/acs.jpcc.5b11887openalex-snapshot
Predicted Surface Composition and Thermodynamic Stability of MXenes in Solution
inferredcites →https://doi.org/10.1021/acs.nanolett.5b00016openalex-snapshot
An Atomically Layered InSe Avalanche Photodetector
inferredcites →https://doi.org/10.1021/acs.nanolett.5b00493openalex-snapshot
Intrinsic Electron Mobility Exceeding 10 3 cm 2 /(V s) in Multilayer InSe FETs
inferredcites →https://doi.org/10.1021/cm401661xopenalex-snapshot
Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting
inferredcites →https://doi.org/10.1021/cm9703886openalex-snapshot
Chemical Vapor Deposition of Hexagonal Gallium Selenide and Telluride Films from Cubane Precursors: Understanding the Envelope of Molecular Control
inferredcites →https://doi.org/10.1021/nl400107kopenalex-snapshot
Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
inferredcites →https://doi.org/10.1021/nl4010089openalex-snapshot
Synthesis and Photoresponse of Large GaSe Atomic Layers
inferredcites →https://doi.org/10.1021/nl500817gopenalex-snapshot
High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
inferredcites →https://doi.org/10.1021/nn300889copenalex-snapshot
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
inferredcites →https://doi.org/10.1021/nn405529ropenalex-snapshot
Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets
inferredcites →https://doi.org/10.1038/nnano.2016.242openalex-snapshot
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
inferredcites →https://doi.org/10.1038/srep05497openalex-snapshot
Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
inferredcites →https://doi.org/10.1038/srep08130openalex-snapshot
Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors
inferredcites →https://doi.org/10.1039/c3cp50233copenalex-snapshot
Tunable electronic and dielectric behavior of GaS and GaSe monolayers
inferredcites →https://doi.org/10.1039/c4cp04968copenalex-snapshot
Performance improvement of multilayer InSe transistors with optimized metal contacts
inferredcites →https://doi.org/10.1039/c5tc03459kopenalex-snapshot
Highly efficient gas molecule-tunable few-layer GaSe phototransistors
inferredcites →https://doi.org/10.1039/c6nr05976gopenalex-snapshot
Synthesis, properties and applications of 2D layered M III X VI (M = Ga, In; X = S, Se, Te) materials
inferredcites →https://doi.org/10.1039/c6tc02700hopenalex-snapshot
One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors
inferredcites →https://doi.org/10.1039/c7nr03941gopenalex-snapshot
Black phosphorus transistors with van der Waals-type electrical contacts
inferredcites →https://doi.org/10.1039/c7tc02866kopenalex-snapshot
Recent advances in investigations of the electronic and optoelectronic properties of group III, IV, and V selenide based binary layered compounds
inferredcites →https://doi.org/10.1039/c8tc02116copenalex-snapshot
Selecting electrode materials for monolayer ReS 2 with an Ohmic contact
inferredcites →https://doi.org/10.1063/1.3382344openalex-snapshot
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
inferredcites →https://doi.org/10.1063/1.4928559openalex-snapshot
Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands
inferredcites →https://doi.org/10.1088/0022-3719/15/6/007openalex-snapshot
Metal-gallium selenide interfaces-observation of the true Schottky limit
inferredcites →https://doi.org/10.1088/2053-1583/aa75ebopenalex-snapshot
Ohmic contact in monolayer InSe-metal interface
inferredcites →https://doi.org/10.1103/physrevb.54.11169openalex-snapshot
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
inferredcites →https://doi.org/10.1103/physrevb.59.1758openalex-snapshot
From ultrasoft pseudopotentials to the projector augmented-wave method
inferredcites →https://doi.org/10.1103/physrevb.63.245407openalex-snapshot
Ab initio modeling of quantum transport properties of molecular electronic devices
inferredcites →https://doi.org/10.1103/physrevb.84.085314openalex-snapshot
Size-induced effects in gallium selenide electronic structure: The influence of interlayer interactions
inferredcites →https://doi.org/10.1103/physrevb.94.245407openalex-snapshot
Mechanical properties of monolayer GaS and GaSe crystals
inferredcites →https://doi.org/10.1103/physrevb.95.115409openalex-snapshot
Structural and electronic properties of monolayer group III monochalcogenides
inferredcites →https://doi.org/10.1103/physrevlett.77.3865openalex-snapshot
Generalized Gradient Approximation Made Simple
inferredcites →https://doi.org/10.1103/physrevlett.84.6078openalex-snapshot
Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces
inferredcites →https://doi.org/10.1126/sciadv.1600069openalex-snapshot
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
inferredcites →https://doi.org/10.1143/jjap.32.l434openalex-snapshot
Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface*
inferredcites →https://doi.org/10.3390/ma11020186openalex-snapshot
High-Quality GaSe Single Crystal Grown by the Bridgman Method

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Intrinsic Ohmic Contacts and Polarity-Tunable Schottky Barriers in M8x12-Graphene (M=Mo, W; X=S, Se) Vdw Heterostructures for High-Performance and Bipolar Device Applications
inferred← citeshttps://doi.org/10.1002/adom.202200332openalex-snapshot
Photodetector Arrays Based on MBE‐Grown GaSe/Graphene Heterostructure
inferred← citeshttps://doi.org/10.1002/aelm.202201056openalex-snapshot
Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors
inferred← citeshttps://doi.org/10.1002/aelm.202400010openalex-snapshot
n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory
inferred← citeshttps://doi.org/10.1002/pssb.202400164openalex-snapshot
Intrinsic Ohmic Contacts and Polarity‐Tunable Schottky Barriers in M8X12–Graphene (M = Mo, W; X = S, Se) van der Waals Heterostructures for High‐Performance and Bipolar Device Applications
inferred← citeshttps://doi.org/10.1002/pssr.202100052openalex-snapshot
Simple Exfoliation of Bulk Gallium Selenide to Single/Few Layers by a Temperature‐Adjustment Bath‐Ultrasonic Treatment
inferred← citeshttps://doi.org/10.1002/smsc.202500487openalex-snapshot
Reconfigurable Magneto‐Optoelectronic Devices for Multidimensional Optical Neural Network
inferred← citeshttps://doi.org/10.1016/j.carbon.2023.01.021openalex-snapshot
Surface potential pinning study for oxygen terminated IIa diamond
inferred← citeshttps://doi.org/10.1016/j.diamond.2022.109206openalex-snapshot
A novel C6BN/graphene heterostructure: Tunable Schottky barrier via interlayer spacing and external electric field
inferred← citeshttps://doi.org/10.1016/j.matdes.2023.112046openalex-snapshot
Recent progress in two-dimensional Nb2C MXene for applications in energy storage and conversion
inferred← citeshttps://doi.org/10.1016/j.sna.2020.112264openalex-snapshot
Analysis of temperature dependent electrical characteristics of Au/GaSe Schottky barrier diode improved by Ce-doping
inferred← citeshttps://doi.org/10.1021/acs.jpcc.3c03761openalex-snapshot
First-Principles Investigation of MXene/MoSi2N4 van der Waals Heterostructures: Strong Fermi Level Pinning Effect Resulting in Ohmic Contact with Low Contact Resistance
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00374openalex-snapshot
Highly Sensitive Band Alignment of the Graphene/MoSi2N4 Heterojunction via an External Electric Field
inferred← citeshttps://doi.org/10.1021/acsami.0c04872openalex-snapshot
Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets
inferred← citeshttps://doi.org/10.1039/c8cp06257aopenalex-snapshot
Functionalized MXenes as ideal electrodes for Janus MoSSe
inferred← citeshttps://doi.org/10.1039/d2cp02388aopenalex-snapshot
A VSi 2 P 4 /FeCl 2 van der Waals heterostructure: a two-dimensional reconfigurable magnetic diode
inferred← citeshttps://doi.org/10.1063/5.0023223openalex-snapshot
A first-principles Quantum Monte Carlo study of two-dimensional (2D) GaSe
inferred← citeshttps://doi.org/10.1063/5.0070423openalex-snapshot
A pathway toward high-throughput quantum Monte Carlo simulations for alloys: A case study of two-dimensional (2D) GaSxSe1−x
inferred← citeshttps://doi.org/10.1088/1361-6463/acab0eopenalex-snapshot
Tunable Schottky contact at the graphene/Janus SMoSiN2 interface for high-efficiency electronic devices
inferred← citeshttps://doi.org/10.1088/1361-6463/ada2a0openalex-snapshot
Electrical transport and rectification behavior in monolayer MoSi2N4 with different metal electrode contacts
inferred← citeshttps://doi.org/10.1088/1361-6633/abf1d4openalex-snapshot
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
inferred← citeshttps://doi.org/10.12693/aphyspola.147.191openalex-snapshot
Semiconducting and Superconducting Properties of 2D Hexagonal Materials
inferred← citeshttps://doi.org/10.13016/m2euli-xtdfopenalex-snapshot
A first-principles Quantum Monte Carlo study of two-dimensional (2D) GaSe
inferred← citeshttps://doi.org/10.1364/ao.412165openalex-snapshot
Generation of a square-shaped pulse in mode-locked fiber lasers with a microfiber-based few-layer Nb2C saturable absorber
inferred← citeshttps://doi.org/10.3390/mi11080750openalex-snapshot
Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review
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