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The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.201600932openalex-snapshot

Dependence of dark current and photoresponse on polarization charges for AlGaN‐based heterojunction p–i–n photodetectors

inferredcites →https://doi.org/10.1002/pssa.201700358openalex-snapshot

The Influence of n‐AlGaN Inserted Layer on the Performance of Back‐Illuminated AlGaN‐Based p‐i‐n Ultraviolet Photodetectors

inferredcites →https://doi.org/10.1016/j.jallcom.2012.02.111openalex-snapshot

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

inferredcites →https://doi.org/10.1016/j.jcrysgro.2007.04.004openalex-snapshot

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

inferredcites →https://doi.org/10.1016/j.jcrysgro.2007.11.136openalex-snapshot

Homoepitaxial seeding and growth of bulk AlN by sublimation

inferredcites →https://doi.org/10.1016/j.jcrysgro.2014.10.015openalex-snapshot

AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.08.028openalex-snapshot

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

inferredcites →https://doi.org/10.1016/j.matlet.2013.09.096openalex-snapshot

Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

inferredcites →https://doi.org/10.1021/cg901519sopenalex-snapshot

Aluminum Nitride Crystal Growth from an Al−N System at 6.0 GPa and 1800 °C

inferredcites →https://doi.org/10.1038/lsa.2012.22openalex-snapshot

High-brightness polarized light-emitting diodes

inferredcites →https://doi.org/10.1039/c3ce40755aopenalex-snapshot

In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition

inferredcites →https://doi.org/10.1039/c3tc00916eopenalex-snapshot

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

inferredcites →https://doi.org/10.1039/c4tc01536copenalex-snapshot

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

inferredcites →https://doi.org/10.1039/c4tc02220copenalex-snapshot

Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

inferredcites →https://doi.org/10.1039/c6ce02130aopenalex-snapshot

Defect annihilation mechanism of AlN buffer structures with alternating high and low V/III ratios grown by MOCVD

inferredcites →https://doi.org/10.1063/1.1947367openalex-snapshot

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

inferredcites →https://doi.org/10.1063/1.2143126openalex-snapshot

Reduction of threading dislocations in AlGaN layers grown on AlN∕sapphire templates using high-temperature GaN interlayer

inferredcites →https://doi.org/10.1063/1.2990048openalex-snapshot

Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer

inferredcites →https://doi.org/10.1063/1.4790839openalex-snapshot

Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy

inferredcites →https://doi.org/10.1063/1.4812237openalex-snapshot

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

inferredcites →https://doi.org/10.1063/1.4891830openalex-snapshot

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

inferredcites →https://doi.org/10.1063/1.4904007openalex-snapshot

Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system

inferredcites →https://doi.org/10.1063/1.4917540openalex-snapshot

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

inferredcites →https://doi.org/10.1063/1.4927602openalex-snapshot

An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

inferredcites →https://doi.org/10.1103/physrevb.58.12899openalex-snapshot

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

inferredcites →https://doi.org/10.1103/physrevb.63.125313openalex-snapshot

Vibrational properties of AlN grown on (111)-oriented silicon

inferredcites →https://doi.org/10.1103/physrevb.70.045411openalex-snapshot

Strain-related structural and vibrational properties of thin epitaxial AlN layers

inferredcites →https://doi.org/10.1117/12.809139openalex-snapshot

Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer

inferredcites →https://doi.org/10.1143/apex.4.031001openalex-snapshot

Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films

inferredcites →https://doi.org/10.1143/apex.4.095501openalex-snapshot

Novel Solution Growth Method of Bulk AlN Using Al and Li$_{3}$N Solid Sources

inferredcites →https://doi.org/10.7567/jjap.52.08jb21openalex-snapshot

Crack-Free Thick AlN Films Obtained by NH3 Nitridation of Sapphire Substrates

inferredcites →https://doi.org/10.7567/jjap.54.081001openalex-snapshot

Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet

inferredcites →https://doi.org/10.7567/jjap.55.05fj05openalex-snapshot

Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

inferredcites →https://doi.org/10.7567/jjap.55.05fl02openalex-snapshot

Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Liquid‐Metal‐Assisted Synthesis of Patterned GaN Thin Films for High‐Performance UV Photodetectors Array

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Graphene quantum dots based UV-photodetector: a comprehensive review

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Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification

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Adsorption configuration of AlN on sapphire surface using first-principles calculations

inferred← citeshttps://doi.org/10.1016/j.jacomc.2025.100060openalex-snapshot

First principles investigation of structural, electronic, optical and magnetic properties of(Er,Gd)co-doped AlN

inferred← citeshttps://doi.org/10.1016/j.jallcom.2018.10.281openalex-snapshot

Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations

inferred← citeshttps://doi.org/10.1016/j.jallcom.2019.153415openalex-snapshot

AlGaN-based UV-C distributed Bragg reflector with a λ-cavity designed for an external cavity structure electron-beam-pumped VCSEL

inferred← citeshttps://doi.org/10.1016/j.matlet.2020.128638openalex-snapshot

Epitaxial growth of polarization-graded AlGaN-based solar-blind ultraviolet photodetectors on pre-grown AlN templates

inferred← citeshttps://doi.org/10.1016/j.matlet.2021.129583openalex-snapshot

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Molecular dynamics simulations of AlN deposition on GaN substrate

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