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The optimization effect of titanium on the phase change properties of SnSb 4 thin films for phase change memory applications

https://doi.org/10.1039/d0ce00697a
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.apsusc.2009.09.077openalex-snapshot
Effects of nitrogen doping on the properties of Ge15Sb85 phase-change thin film
inferredcites →https://doi.org/10.1016/j.jallcom.2017.12.146openalex-snapshot
Superlattice-like Sb-Ge thin films for high thermal stability and low power phase change memory
inferredcites →https://doi.org/10.1016/j.jnoncrysol.2015.11.013openalex-snapshot
SnSb4/SiO2 multilayered thin films for phase change memory applications
inferredcites →https://doi.org/10.1016/j.matchar.2007.11.001openalex-snapshot
Characterization of nano-layered multilayer coatings using modified Bragg law
inferredcites →https://doi.org/10.1016/j.pcrysgrow.2015.10.001openalex-snapshot
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system
inferredcites →https://doi.org/10.1021/acs.nanolett.6b03688openalex-snapshot
Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits
inferredcites →https://doi.org/10.1038/nmat1350openalex-snapshot
Low-cost and nanoscale non-volatile memory concept for future silicon chips
inferredcites →https://doi.org/10.1038/nmat1627openalex-snapshot
Ultra-high-density phase-change storage and memory
inferredcites →https://doi.org/10.1038/nmat2009openalex-snapshot
Phase-change materials for rewriteable data storage
inferredcites →https://doi.org/10.1039/c1ce05398aopenalex-snapshot
Crystallization behaviors of an ultra-thin Ga–Sb film
inferredcites →https://doi.org/10.1039/c2nr30541kopenalex-snapshot
Nanoscale phase change memory materials
inferredcites →https://doi.org/10.1039/c3ce42024hopenalex-snapshot
Crystallization behaviors of Zn x Sb 100−x thin films for ultralong data retention phase change memory applications
inferredcites →https://doi.org/10.1039/c4ce00547copenalex-snapshot
Fast crystallization and low-power amorphization of Mg–Sb–Te reversible phase-change films
inferredcites →https://doi.org/10.1039/c5ce02340hopenalex-snapshot
Superlattice-like SnSb 4 /Ge thin films for ultra-high speed phase change memory applications
inferredcites →https://doi.org/10.1063/1.2719148openalex-snapshot
Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress
inferredcites →https://doi.org/10.1063/1.3294694openalex-snapshot
Phase-dependent thermal conductivity of Ge1Sb4Te7 and N:Ge1Sb4Te7 for phase change memory applications
inferredcites →https://doi.org/10.1063/1.3669699openalex-snapshot
Ga-Sb-Se material for low-power phase change memory
inferredcites →https://doi.org/10.1063/1.3673281openalex-snapshot
Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials
inferredcites →https://doi.org/10.1063/1.373041openalex-snapshot
Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
inferredcites →https://doi.org/10.1063/1.4754138openalex-snapshot
W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
inferredcites →https://doi.org/10.1063/1.4982789openalex-snapshot
TixSb100−x thin films as candidates for phase-change memory application
inferredcites →https://doi.org/10.1063/1.5012872openalex-snapshot
Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory
inferredcites →https://doi.org/10.1088/0957-4484/22/25/254005openalex-snapshot
SiO2doped Ge2Sb2Te5thin films with high thermal efficiency for applications in phase change random access memory
inferredcites →https://doi.org/10.1088/1361-6528/aa82d1openalex-snapshot
Multi-level storage and ultra-high speed of superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 thin film for phase-change memory application
inferredcites →https://doi.org/10.1103/physrev.56.978openalex-snapshot
The Scherrer Formula for X-Ray Particle Size Determination
inferredcites →https://doi.org/10.1103/physrevlett.21.1450openalex-snapshot
Reversible Electrical Switching Phenomena in Disordered Structures
inferredcites →https://doi.org/10.1103/physrevlett.98.055505openalex-snapshot
Unique Melting Behavior in Phase-Change Materials for Rewritable Data Storage
inferredcites →https://doi.org/10.1126/science.1221561openalex-snapshot
Breaking the Speed Limits of Phase-Change Memory
inferredcites →https://doi.org/10.1126/science.aao3212openalex-snapshot
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
inferredcites →https://doi.org/10.1143/jjap.42.863openalex-snapshot
Prospects of Doped Sb–Te Phase-Change Materials for High-Speed Recording
inferredcites →https://doi.org/10.1146/annurev-matsci-082908-145405openalex-snapshot
Phase Change Materials
inferredcites →https://doi.org/10.1557/s0883769400036368openalex-snapshot
Erasable Phase-Change Optical Materials

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4852761openalex-extracted
Impact of Titanium Modification on the Performance Improvement and Phase Change Mechanism of Znsb Thin Film
inferred← citeshttps://doi.org/10.2139/ssrn.4886511openalex-extracted
Impact of Titanium Modification on the Performance Improvement and Phase Change Mechanism of Znsb Thin Film
inferred← citeshttps://doi.org/10.1002/advs.202507859openalex-snapshot
Flexible Memory Application of Nanoscale Ti–Ge–Te Thin Film as Information Storage Medium With Excellent Thermal Stability, Low Resistance Drift and Superior Bending Characteristic
inferred← citeshttps://doi.org/10.1007/s11664-026-13028-0openalex-snapshot
Role of Titanium Nanolayers in Tunable Phase Transition of Ge1Sb9 Thin Film for Phase-Change Memory Application
inferred← citeshttps://doi.org/10.1016/j.ceramint.2024.06.113openalex-snapshot
Crystallization behavior and structural characteristics of Cr-doped Sb70Se30 thin films for phase change memory
inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.09.143openalex-snapshot
Toward memory application and flexible electronics: Ti0.02Sb2Te3 thin film exhibiting excellent crystallization behavior and superior endurable performance
inferred← citeshttps://doi.org/10.1016/j.chaos.2025.116447openalex-snapshot
Modeling memristor switching behavior through phase-delay cluster analysis
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.171794openalex-snapshot
Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127434openalex-snapshot
Crystallization kinetics of Sb70Se30 thin films for phase change memories under the non-isothermal conditions
inferred← citeshttps://doi.org/10.1016/j.jnoncrysol.2021.121069openalex-snapshot
Ta-doped Ge5Sb95 phase change thin films for high speed and low power application
inferred← citeshttps://doi.org/10.1016/j.jnoncrysol.2023.122395openalex-snapshot
Ultrafast phase change speed and high thermal stability of scandium doped SnSb4 thin film for PCRAM applications
inferred← citeshttps://doi.org/10.1016/j.jpcs.2026.113559openalex-snapshot
Enhancement of phase change memory properties of GeTe films through GeS 2 incorporation
inferred← citeshttps://doi.org/10.1016/j.surfin.2024.105044openalex-snapshot
Impact of titanium modification on the performance improvement and phase change mechanism of ZnSb thin film
inferred← citeshttps://doi.org/10.2139/ssrn.5737093openalex-snapshot
Enhancement of phase change memory properties of GeTe films through GeS2 incorporation
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