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2D pn junctions driven out-of-equilibrium
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adma.201502278openalex-snapshot
A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe 2
inferredcites →https://doi.org/10.1002/adma.201701168openalex-snapshot
Single Atomically Sharp Lateral Monolayer p‐n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency
inferredcites →https://doi.org/10.1002/adma.201906499openalex-snapshot
Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics
inferredcites →https://doi.org/10.1002/smll.201302818openalex-snapshot
Tunable Reverse‐Biased Graphene/Silicon Heterojunction Schottky Diode Sensor
inferredcites →https://doi.org/10.1002/smll.201601310openalex-snapshot
Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor
inferredcites →https://doi.org/10.1016/j.nantod.2018.02.007openalex-snapshot
Two-dimensional transition metal dichalcogenide hybrid materials for energy applications
inferredcites →https://doi.org/10.1021/acs.nanolett.0c00741openalex-snapshot
Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
inferredcites →https://doi.org/10.1021/acs.nanolett.6b01822openalex-snapshot
Carrier Delocalization in Two-Dimensional Coplanar p–n Junctions of Graphene and Metal Dichalcogenides
inferredcites →https://doi.org/10.1021/acs.nanolett.9b05247openalex-snapshot
Tuning Electrical Conductance of MoS2 Monolayers through Substitutional Doping
inferredcites →https://doi.org/10.1021/acsami.9b06588openalex-snapshot
Postgrowth Substitutional Tin Doping of 2D WS2 Crystals Using Chemical Vapor Deposition
inferredcites →https://doi.org/10.1021/acsnano.9b04957openalex-snapshot
Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response
inferredcites →https://doi.org/10.1021/acsphotonics.7b01103openalex-snapshot
Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
inferredcites →https://doi.org/10.1021/nl501962copenalex-snapshot
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
inferredcites →https://doi.org/10.1021/nn502776hopenalex-snapshot
Monolayer MoS2 Heterojunction Solar Cells
inferredcites →https://doi.org/10.1021/nn503284nopenalex-snapshot
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
inferredcites →https://doi.org/10.1038/nchem.2505openalex-snapshot
Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry
inferredcites →https://doi.org/10.1038/nnano.2014.150openalex-snapshot
Atomically thin p–n junctions with van der Waals heterointerfaces
inferredcites →https://doi.org/10.1038/nnano.2014.25openalex-snapshot
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
inferredcites →https://doi.org/10.1038/nnano.2014.26openalex-snapshot
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
inferredcites →https://doi.org/10.1038/nnano.2017.104openalex-snapshot
Two-dimensional non-volatile programmable p–n junctions
inferredcites →https://doi.org/10.1038/s41467-019-12707-3openalex-snapshot
High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
inferredcites →https://doi.org/10.1038/s41928-020-0376-1openalex-snapshot
Doping on demand in 2D devices
inferredcites →https://doi.org/10.1039/c5nr01052gopenalex-snapshot
Two-dimensional materials and their prospects in transistor electronics
inferredcites →https://doi.org/10.1039/c5nr04083copenalex-snapshot
Gate-tunable diode and photovoltaic effect in an organic–2D layered material p–n junction
inferredcites →https://doi.org/10.1039/c6tc04699aopenalex-snapshot
Gate tunable photovoltaic effect in MoS 2 vertical p–n homostructures
inferredcites →https://doi.org/10.1039/c7cs00880eopenalex-snapshot
Atomically thin p–n junctions based on two-dimensional materials
inferredcites →https://doi.org/10.1039/c7tc01806aopenalex-snapshot
Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses
inferredcites →https://doi.org/10.1039/c9mh01109aopenalex-snapshot
Self-doped p–n junctions in two-dimensional In 2 X 3 van der Waals materials
inferredcites →https://doi.org/10.1039/c9nr02029bopenalex-snapshot
Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications
inferredcites →https://doi.org/10.1039/c9nr10859aopenalex-snapshot
Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics
inferredcites →https://doi.org/10.1063/1.4926478openalex-snapshot
Analytical theory of the space-charge region of lateral p-n junctions in nanofilms
inferredcites →https://doi.org/10.1063/1.4994047openalex-snapshot
Electrostatics of lateral p-n junctions in atomically thin materials
inferredcites →https://doi.org/10.1063/1.5027520openalex-snapshot
Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions
inferredcites →https://doi.org/10.1088/0268-1242/30/7/075010openalex-snapshot
Two-dimensional (2D) transition metal dichalcogenide semiconductor field-effect transistors: the interface trap density extraction and compact model
inferredcites →https://doi.org/10.1088/1361-6463/aaa58copenalex-snapshot
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
inferredcites →https://doi.org/10.1088/1361-6528/aabeb2openalex-snapshot
Electrostatics of two-dimensional lateral junctions
inferredcites →https://doi.org/10.1088/2053-1583/2/1/015003openalex-snapshot
Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
inferredcites →https://doi.org/10.1088/2053-1583/2/4/041001openalex-snapshot
Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures
inferredcites →https://doi.org/10.1088/2053-1583/3/4/041001openalex-snapshot
Atomically thin lateral p–n junction photodetector with large effective detection area
inferredcites →https://doi.org/10.1088/2053-1583/ab6267openalex-snapshot
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge
inferredcites →https://doi.org/10.1088/2053-1591/1/1/015604openalex-snapshot
Two-dimensional bipolar junction transistors
inferredcites →https://doi.org/10.1109/jeds.2018.2803161openalex-snapshot
Dielectric Engineering With the Environment Material in 2-D Semiconductor Devices
inferredcites →https://doi.org/10.1109/ted.2014.2365028openalex-snapshot
A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect
inferredcites →https://doi.org/10.1109/tnano.2018.2799960openalex-snapshot
Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications
inferredcites →https://doi.org/10.1126/science.1220527openalex-snapshot
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
inferredcites →https://doi.org/10.1126/science.aab4097openalex-snapshot
Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface
inferredcites →https://doi.org/10.1134/1.1500469openalex-snapshot
Two-dimensional p-n junction under equilibrium conditions
inferredcites →https://doi.org/10.1134/s1063784215100254openalex-snapshot
Electric field and charge density in the plane of a quasi-equilibrium asymmetric 2D p–n junction with zero current
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Rethinking Energy Conservation and Generation for Sustainable Solutions-An Innovative Energy Circuitry Approach
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Non‐Volatile and Gate‐Controlled Multistate Photovoltaic Response in WSe2/h‐BN/Graphene Semi‐Floating Gate Field‐Effect Transistors
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Manganese doping regulated the built-in electric field of FeBTC for enhanced photoelectrocatalytic hydrolysis
inferred← citeshttps://doi.org/10.1016/j.jallcom.2021.159095openalex-snapshot
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Directed electron regulation promoted sandwich-like CoO@FeBTC/NF with p-n heterojunctions by gel electrodeposition for oxygen evolution reaction
inferred← citeshttps://doi.org/10.1016/j.rio.2025.100931openalex-snapshot
Alteration of quantum capacitance of 2D metal oxide semiconductor field-effect transistors under the effect of microwave fields
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5c01649openalex-snapshot
Achieving Boosted Thermoelectric Power Factor of MoS2 through Selective Charged-Impurity-Free Doping
inferred← citeshttps://doi.org/10.1039/d5mh01457copenalex-snapshot
Advances and challenges of metal organic frameworks (MOFs) and derivatives in photoelectrocatalytic water splitting
inferred← citeshttps://doi.org/10.1063/5.0063144openalex-snapshot
The gate tunable 2D pn junction driven out-of-equilibrium
inferred← citeshttps://doi.org/10.1088/1361-6528/ade9ccopenalex-snapshot
Flexible self-powered MoS2/LaVO3 photodetector enhanced by graphene quantum dots interlayer
inferred← citeshttps://doi.org/10.1103/2cqs-d5twopenalex-snapshot
Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: Two-dimensional free excitons, H-band, and the tidal effect
inferred← citeshttps://doi.org/10.1103/physrevapplied.16.024030openalex-snapshot
Switching Behavior of a Heterostructure Based on Periodically Doped Graphene Nanoribbon
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TDMSim: Enabling High-Density and Energy-Efficient GPU DRAM Caches with 2D-Materials for Data-Intensive Applications
inferred← citeshttps://doi.org/10.2139/ssrn.7067229openalex-snapshot
Asymmetric-Field Driven Full-Depletion Photodetectors Based on Plasmon-Enhanced 2D/3D vdW Heterostructures
inferred← citeshttps://doi.org/10.2174/9789815313208125010016openalex-snapshot
Photovoltaic Performance Estimation of Thin Film Lateral Pn-Junction Solar Devices and Comprehensive Consideration of Performances of Various Homo- and Hetero-Junction Structures
inferred← citeshttps://doi.org/10.26565/2312-4334-2024-2-46openalex-snapshot
Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance
inferred← citeshttps://doi.org/10.3390/solids7030023openalex-snapshot
Investigation of Si/GaN Heterojunction PN Diode Characteristics Modulated by the Piezoelectric Effect
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