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Abnormal vibrational anisotropy and thermal properties of a two-dimensional GeAs semiconductor

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.201707379openalex-snapshot
Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide
inferredcites →https://doi.org/10.1002/adma.201705934openalex-snapshot
Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors
inferredcites →https://doi.org/10.1002/adma.201800754openalex-snapshot
Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy
inferredcites →https://doi.org/10.1002/advs.201800478openalex-snapshot
Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity
inferredcites →https://doi.org/10.1002/jrs.4388openalex-snapshot
Birth of room‐temperature magnons and Raman line enhancement in ZnO nanostructures containing cobalt oxide
inferredcites →https://doi.org/10.1002/pssb.201552428openalex-snapshot
Experimental and theoretical directional dependence of optical polar phonons in the LiNbO3 single crystal: New and complete assignment of the normal mode frequencies
inferredcites →https://doi.org/10.1016/j.jallcom.2020.154161openalex-snapshot
The physical mechanism of extremely low thermal conductivity of BiCuTeO and BiCuSeO revealed by inelastic neutron and Raman spectroscopy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.03.019openalex-snapshot
High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors
inferredcites →https://doi.org/10.1016/j.jpcs.2021.109956openalex-snapshot
First-principles study of structural, electronic, and thermal conductivity properties of monolayer SrFBr
inferredcites →https://doi.org/10.1016/j.jssc.2019.05.016openalex-snapshot
Aliovalent substitutions of the 2D layered semiconductor GeAs
inferredcites →https://doi.org/10.1016/j.mssp.2021.106446openalex-snapshot
Phonon transport in Zintl Ba2ZnAs2 and Ba2ZnSb2: A first-principles study
inferredcites →https://doi.org/10.1016/j.solener.2021.05.034openalex-snapshot
Type-II GeAs/GaSe heterostructure as suitable candidate for solar power conversion efficiency
inferredcites →https://doi.org/10.1016/j.tca.2006.02.013openalex-snapshot
Heat capacity per unit volume
inferredcites →https://doi.org/10.1021/acs.chemmater.6b00567openalex-snapshot
GeAs: Highly Anisotropic van der Waals Thermoelectric Material
inferredcites →https://doi.org/10.1021/acs.jpcc.6b12059openalex-snapshot
Temperature-Dependent Raman Responses of the Vapor-Deposited Tin Selenide Ultrathin Flakes
inferredcites →https://doi.org/10.1021/acsnano.0c00836openalex-snapshot
A Scalable Method for Thickness and Lateral Engineering of 2D Materials
inferredcites →https://doi.org/10.1021/acsnano.7b05321openalex-snapshot
Anomalous Polarized Raman Scattering and Large Circular Intensity Differential in Layered Triclinic ReS2
inferredcites →https://doi.org/10.1021/acsnano.8b06629openalex-snapshot
Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs
inferredcites →https://doi.org/10.1021/nl071033gopenalex-snapshot
Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers
inferredcites →https://doi.org/10.1039/c8ta02676aopenalex-snapshot
Two-dimensional GeAs with a visible range band gap
inferredcites →https://doi.org/10.1039/d1tc00966dopenalex-snapshot
Intrinsic auxeticity and negative piezoelectricity in two-dimensional group-IV dipnictide monolayers with in-plane anisotropy
inferredcites →https://doi.org/10.1063/1.2917314openalex-snapshot
Determining the stress tensor in strained semiconductor structures by using polarized micro-Raman spectroscopy in oblique backscattering configuration
inferredcites →https://doi.org/10.1063/1.4926508openalex-snapshot
Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets
inferredcites →https://doi.org/10.1080/00018730110101395openalex-snapshot
The Raman effect in crystals
inferredcites →https://doi.org/10.1088/0256-307x/34/11/117202openalex-snapshot
Predicted High Thermoelectric Performance of Quasi-Two-Dimensional Compound GeAs Using First-Principles Calculations *
inferredcites →https://doi.org/10.1088/1361-6463/abcc91openalex-snapshot
Field emission from two-dimensional GeAs
inferredcites →https://doi.org/10.1088/1674-4926/40/6/061001openalex-snapshot
Optical and electrical properties of two-dimensional anisotropic materials
inferredcites →https://doi.org/10.1103/physrevb.100.214516openalex-snapshot
Pressure-induced superconductivity in GeAs
inferredcites →https://doi.org/10.1103/physrevb.60.2627openalex-snapshot
Phonon group velocity and thermal conduction in superlattices
inferredcites →https://doi.org/10.17188/1313324openalex-snapshot
Materials Data on GeAs by Materials Project
inferredcites →https://doi.org/10.2109/jcersj.103.733openalex-snapshot
Specific Heats and Grüneisen Constant of Aluminosilicate Glasses Containing Rare-Earth Oxides

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4797206openalex-extracted
Photoelectric Characteristics of Adsorbed and Doped Non-Metallic Atoms on Ga2o3 Monolayer
inferred← citeshttps://doi.org/10.1016/j.physb.2024.416296openalex-snapshot
The photoelectric properties of Ga₂O₃ monolayer upon adsorption and doping with non-metal atoms
inferred← citeshttps://doi.org/10.1021/acsanm.4c02419openalex-snapshot
First-Principles Calculations of Mechanical and Thermoelectric Properties of 2D GeAs: Implications for Flexible Thermoelectric Devices
inferred← citeshttps://doi.org/10.1021/acsnano.4c15485openalex-snapshot
Chiral Phonon, Valley Polarization, and Inter/Intravalley Scattering in a van der Waals ReSe2 Semiconductor
inferred← citeshttps://doi.org/10.1039/d3cp04531eopenalex-snapshot
Optical properties of ferroic Fe 2 O(SeO 3 ) 2 and Fe 2 (SeO 3 ) 3 ·3H 2 O
inferred← citeshttps://doi.org/10.1039/d3nr02678gopenalex-snapshot
Anisotropy and thermal properties in GeTe semiconductor by Raman analysis
inferred← citeshttps://doi.org/10.3390/molecules28237806openalex-snapshot
Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors
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