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Degradation of hexagonal silicon-carbide-based bipolar devices

https://doi.org/10.1063/1.2159578
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-3951(199707)202:1<163::aid-pssb163>3.0.co;2-1openalex-snapshot
Modified-Lely SiC Crystals Grown in [11-00] and [112-0] Directions
inferredcites →https://doi.org/10.1002/1521-3951(199707)202:1<247::aid-pssb247>3.0.co;2-qopenalex-snapshot
Step-Controlled Epitaxial Growth of High-Quality SiC Layers
inferredcites →https://doi.org/10.1002/1521-3951(199707)202:1<35::aid-pssb35>3.0.co;2-8openalex-snapshot
Polytypism and Properties of Silicon Carbide
inferredcites →https://doi.org/10.1002/pssa.2210790102openalex-snapshot
Photostimulated Diffusion in Semiconductors
inferredcites →https://doi.org/10.1002/pssa.2210820214openalex-snapshot
Motion of partial dislocation in silicon carbide
inferredcites →https://doi.org/10.1007/s11664-002-0085-8openalex-snapshot
Stacking-fault formation and propagation in 4H-SiC PiN diodes
inferredcites →https://doi.org/10.1007/s11664-002-0245-xopenalex-snapshot
Stacking-fault formation and propagation in 4H-SiC PiN diodes
inferredcites →https://doi.org/10.1007/s11664-004-0205-8openalex-snapshot
Partial dislocations and stacking faults in 4H-SiC PiN diodes
inferredcites →https://doi.org/10.1016/0022-0248(78)90169-0openalex-snapshot
Investigation of growth processes of ingots of silicon carbide single crystals
inferredcites →https://doi.org/10.1016/0022-0248(81)90184-6openalex-snapshot
General principles of growing large-size single crystals of various silicon carbide polytypes
inferredcites →https://doi.org/10.1016/0022-0248(96)00300-4openalex-snapshot
Structural defects in α-SiC single crystals grown by the modified-Lely method
inferredcites →https://doi.org/10.1016/0304-3991(93)90146-oopenalex-snapshot
Polytypic transformations in SiC: the role of TEM
inferredcites →https://doi.org/10.1016/0921-5107(92)90190-kopenalex-snapshot
A computational study into the origin of SiC polytypes
inferredcites →https://doi.org/10.1016/0921-5107(94)04048-9openalex-snapshot
Growth of bulk SiC
inferredcites →https://doi.org/10.1016/0925-9635(94)05250-6openalex-snapshot
Deformation of nitrogen doped cubic polytype SiC
inferredcites →https://doi.org/10.1016/b978-075064681-9/50005-5openalex-snapshot
Dislocations in Face-centred Cubic Metals
inferredcites →https://doi.org/10.1016/j.jcrysgro.2003.08.065openalex-snapshot
Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography
inferredcites →https://doi.org/10.1016/j.jcrysgro.2003.09.054openalex-snapshot
Dislocation nucleation in 4H silicon carbide epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2004.04.044openalex-snapshot
Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer
inferredcites →https://doi.org/10.1016/s0022-0248(00)00867-8openalex-snapshot
Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method
inferredcites →https://doi.org/10.1016/s0022-0248(02)01706-2openalex-snapshot
Dislocation conversion in 4H silicon carbide epitaxy
inferredcites →https://doi.org/10.1016/s0022-0248(03)01413-1openalex-snapshot
Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport
inferredcites →https://doi.org/10.1016/s0022-0248(03)01584-7openalex-snapshot
High-resolution X-ray diffraction and optical absorption study of heavily nitrogen-doped 4H–SiC crystals
inferredcites →https://doi.org/10.1016/s0022-0248(97)00289-3openalex-snapshot
Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions
inferredcites →https://doi.org/10.1016/s0168-583x(96)00495-8openalex-snapshot
Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems
inferredcites →https://doi.org/10.1016/s0168-583x(96)00505-8openalex-snapshot
Microstructural characterization of amorphized and recrystallized 6H-SiC
inferredcites →https://doi.org/10.1016/s0921-5107(03)00040-0openalex-snapshot
Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions
inferredcites →https://doi.org/10.1016/s0921-5107(98)00528-5openalex-snapshot
SiC power devices for high voltage applications
inferredcites →https://doi.org/10.1038/nature02810openalex-snapshot
Ultrahigh-quality silicon carbide single crystals
inferredcites →https://doi.org/10.1051/epjap:2004057openalex-snapshot
Stacking faults in heavily nitrogen doped 4H-SiC
inferredcites →https://doi.org/10.1051/jphyscol:1979601openalex-snapshot
MODELS OF THE DISLOCATION STRUCTURE
inferredcites →https://doi.org/10.1051/mmm:0199300402-3021100openalex-snapshot
Recombination enhanced dislocation glide in silicon carbide observed in-situ by transmission electron microscopy
inferredcites →https://doi.org/10.1063/1.110218openalex-snapshot
Degradation of II-VI based blue-green light emitters
inferredcites →https://doi.org/10.1063/1.112042openalex-snapshot
Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue-green laser diode
inferredcites →https://doi.org/10.1063/1.112234openalex-snapshot
〈100〉 dark line defect in II-VI blue-green light emitters
inferredcites →https://doi.org/10.1063/1.113130openalex-snapshot
Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.117804openalex-snapshot
The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers
inferredcites →https://doi.org/10.1063/1.120486openalex-snapshot
Bright-line defect formation in silicon carbide injection diodes
inferredcites →https://doi.org/10.1063/1.1380221openalex-snapshot
Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes
inferredcites →https://doi.org/10.1063/1.1415347openalex-snapshot
Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
inferredcites →https://doi.org/10.1063/1.1425084openalex-snapshot
Luminescence from stacking faults in 4H SiC
inferredcites →https://doi.org/10.1063/1.1446212openalex-snapshot
Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
inferredcites →https://doi.org/10.1063/1.1475769openalex-snapshot
Visualization of low-frequency liquid surface acoustic waves by means of optical diffraction
inferredcites →https://doi.org/10.1063/1.1484229openalex-snapshot
Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals
inferredcites →https://doi.org/10.1063/1.1487904openalex-snapshot
Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes
inferredcites →https://doi.org/10.1063/1.1496498openalex-snapshot
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
inferredcites →https://doi.org/10.1063/1.1505994openalex-snapshot
Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes
inferredcites →https://doi.org/10.1063/1.1516250openalex-snapshot
Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing
inferredcites →https://doi.org/10.1063/1.1519961openalex-snapshot
Stacking fault formation in highly doped 4H-SiC epilayers during annealing
inferredcites →https://doi.org/10.1063/1.1534376openalex-snapshot
Cubic polytype inclusions in 4H–SiC
inferredcites →https://doi.org/10.1063/1.1566794openalex-snapshot
Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes
inferredcites →https://doi.org/10.1063/1.1579120openalex-snapshot
Doping-induced strain in N-doped 4H–SiC crystals
inferredcites →https://doi.org/10.1063/1.1606497openalex-snapshot
X-ray diffraction measurement of doping induced lattice mismatch in n -type 4H-SiC epilayers grown on p -type substrates
inferredcites →https://doi.org/10.1063/1.1610772openalex-snapshot
Ab initio study of 3C inclusions and stacking fault–stacking fault interactions in 6H-SiC
inferredcites →https://doi.org/10.1063/1.1620684openalex-snapshot
Transmission electron microscopy investigation of dislocations in forward-biased 4H-SiC p–i–n diodes
inferredcites →https://doi.org/10.1063/1.1633969openalex-snapshot
Core structure and properties of partial dislocations in silicon carbide p-i-n diodes
inferredcites →https://doi.org/10.1063/1.1635996openalex-snapshot
Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
inferredcites →https://doi.org/10.1063/1.1654962openalex-snapshot
Defect structure introduced during operation of heterojunction GaAs lasers
inferredcites →https://doi.org/10.1063/1.1663883openalex-snapshot
Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers
inferredcites →https://doi.org/10.1063/1.1756218openalex-snapshot
Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes
inferredcites →https://doi.org/10.1063/1.1763232openalex-snapshot
Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82, 2410 (2003)]
inferredcites →https://doi.org/10.1063/1.1765209openalex-snapshot
Stacking fault formation in SiC p-i-n diodes of (11-20) orientation
inferredcites →https://doi.org/10.1063/1.1825072openalex-snapshot
Cross-sectional structure of carrot defects in 4H–SiC epilayers
inferredcites →https://doi.org/10.1063/1.1872196openalex-snapshot
Stacking fault nucleation sites in diffused 4H-SiC p-i-n diodes.
inferredcites →https://doi.org/10.1063/1.1927274openalex-snapshot
Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers
inferredcites →https://doi.org/10.1063/1.1997277openalex-snapshot
Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
inferredcites →https://doi.org/10.1063/1.2138442openalex-snapshot
Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy
inferredcites →https://doi.org/10.1063/1.331725openalex-snapshot
Quantitative measurements of recombination enhanced dislocation glide in gallium arsenide
inferredcites →https://doi.org/10.1063/1.333946openalex-snapshot
Electron-beam irradiation enhanced dislocation glide in GaAs observed by transmission electron microscopy
inferredcites →https://doi.org/10.1063/1.341608openalex-snapshot
Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
inferredcites →https://doi.org/10.1063/1.359507openalex-snapshot
On degradation of ZnSe-based blue-green diode lasers
inferredcites →https://doi.org/10.1063/1.88139openalex-snapshot
Defect structure of degraded heterojunction GaAlAs−GaAs lasers
inferredcites →https://doi.org/10.1063/1.88760openalex-snapshot
Injection-stimulated dislocation motion in semiconductors
inferredcites →https://doi.org/10.1063/1.89145openalex-snapshot
Dislocation climb model in compound semiconductors with zinc blende structure
inferredcites →https://doi.org/10.1063/1.89432openalex-snapshot
The origin of dislocation climb during laser operation
inferredcites →https://doi.org/10.1080/00018738200101408openalex-snapshot
Creation of lattice defects by electronic excitation in alkali halides
inferredcites →https://doi.org/10.1080/014186100250615openalex-snapshot
Stacking fault energy of 6H-SiC and 4H-SiC single crystals
inferredcites →https://doi.org/10.1080/01418610110033939openalex-snapshot
On transition temperatures in the plasticity and fracture of semiconductors
inferredcites →https://doi.org/10.1080/01418617908234842openalex-snapshot
A new method of burgers vector identification from electron microscope images
inferredcites →https://doi.org/10.1080/01418618808214408openalex-snapshot
Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy
inferredcites →https://doi.org/10.1080/01418619808241933openalex-snapshot
An optical and transmission electron microscopy study of deformation-induced defects in 6H-SiC
inferredcites →https://doi.org/10.1088/0953-8984/14/48/310openalex-snapshot
Theoretical study of planar defects in silicon carbide
inferredcites →https://doi.org/10.1093/oxfordjournals.jmicro.a023812openalex-snapshot
Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
inferredcites →https://doi.org/10.1093/oxfordjournals.jmicro.a023813openalex-snapshot
Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
inferredcites →https://doi.org/10.1103/physrevb.57.12017openalex-snapshot
Total energy differences between SiC polytypes revisited
inferredcites →https://doi.org/10.1103/physrevb.65.033203openalex-snapshot
Localized electronic states around stacking faults in silicon carbide
inferredcites →https://doi.org/10.1103/physrevb.67.155204openalex-snapshot
Stacking faults in 3 C − , 4 H − , and 6 H − SiC polytypes investigated by an ab initio supercell method
inferredcites →https://doi.org/10.1103/physrevb.68.174108openalex-snapshot
Structure and motion of basal dislocations in silicon carbide
inferredcites →https://doi.org/10.1103/physrevb.68.245309openalex-snapshot
Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide
inferredcites →https://doi.org/10.1103/physrevb.69.041305openalex-snapshot
Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy
inferredcites →https://doi.org/10.1103/physrevlett.33.489openalex-snapshot
Observation of Recombination-Enhanced Defect Reactions in Semiconductors
inferredcites →https://doi.org/10.1103/physrevlett.60.1406openalex-snapshot
Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy
inferredcites →https://doi.org/10.1103/physrevlett.61.2368openalex-snapshot
Observation of Interface Band Structure by Ballistic-Electron-Emission Microscopy
inferredcites →https://doi.org/10.1103/physrevlett.92.175504openalex-snapshot
Driving Force of Stacking-Fault Formation in SiC p−i−n Diodes
inferredcites →https://doi.org/10.1109/16.34247openalex-snapshot
Optimum semiconductors for high-power electronics
inferredcites →https://doi.org/10.1109/led.2004.832122openalex-snapshot
10-kV, 123-m $Omega cdot $ cm $^2$ 4H-SiC Power DMOSFETs
inferredcites →https://doi.org/10.1109/proc.1973.9197openalex-snapshot
Degradation of CW GaAs double-heterojunction lasers at 300 K
inferredcites →https://doi.org/10.1116/1.1705644openalex-snapshot
Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy
inferredcites →https://doi.org/10.1149/1.2095535openalex-snapshot
Degradation of III–V Opto‐Electronic Devices
inferredcites →https://doi.org/10.1557/jmr.1996.0071openalex-snapshot
Growth defects in GaN films on sapphire: The probable origin of threading dislocations
inferredcites →https://doi.org/10.1557/mrs2005.74openalex-snapshot
Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices
inferredcites →https://doi.org/10.1557/proc-339-735openalex-snapshot
X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films
inferredcites →https://doi.org/10.1557/proc-815-j2.1openalex-snapshot
Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.264-268.123openalex-snapshot
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.338-342.477openalex-snapshot
Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.338-342.513openalex-snapshot
Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.338-342.67openalex-snapshot
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.338-342.683openalex-snapshot
Optical Characterization of 4H-SiC p+n-n+ Structures Applying Time- and Spectrally Resolved Emission Microscopy
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.353-356.299openalex-snapshot
Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.353-356.727openalex-snapshot
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.1199openalex-snapshot
5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.1259openalex-snapshot
High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.1281openalex-snapshot
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.231openalex-snapshot
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.423openalex-snapshot
Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.427openalex-snapshot
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.431openalex-snapshot
Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.439openalex-snapshot
Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.447openalex-snapshot
Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.451openalex-snapshot
4H- to 3C-SiC Polytypic Transformation during Oxidation
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.455openalex-snapshot
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.389-393.9openalex-snapshot
Characterisation and Defects in Silicon Carbide
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.433-436.253openalex-snapshot
Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.433-436.269openalex-snapshot
Doping-Related Strain in n-Doped 4H-SiC Crystals
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.433-436.901openalex-snapshot
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.1113openalex-snapshot
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.1129openalex-snapshot
Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.1141openalex-snapshot
SiC BJT Technology for Power Switching and RF Applications
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.1145openalex-snapshot
Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.1173openalex-snapshot
A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.1245openalex-snapshot
BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.157openalex-snapshot
Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.359openalex-snapshot
TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.453openalex-snapshot
Density Functional Based Modelling of 30° Partial Dislocations in SiC
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.529openalex-snapshot
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.533openalex-snapshot
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.537openalex-snapshot
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.963openalex-snapshot
SiC Devices for High Voltage High Power Applications
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.483-485.965openalex-snapshot
Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.483-485.97openalex-snapshot
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4832844openalex-extracted
Reliability and Condition Monitoring of Sic Power MOSFETs
inferred← citeshttps://doi.org/10.1002/9781118313534.ch4openalex-snapshot
Epitaxial Growth of Silicon Carbide
inferred← citeshttps://doi.org/10.1002/9781118313534.ch5openalex-snapshot
Characterization Techniques and Defects in Silicon Carbide
inferred← citeshttps://doi.org/10.1002/9783527629053.ch3openalex-snapshot
Formation of Extended Defects in 4H‐SiC Epitaxial Growth and Development of a Fast Growth Technique
inferred← citeshttps://doi.org/10.1002/9783527629053.ch8openalex-snapshot
Optical Properties of As‐Grown and Process‐Induced Stacking Faults in 4H‐SiC
inferred← citeshttps://doi.org/10.1002/9783527824724.ch16openalex-snapshot
Special Focus on HEV and EV Applications: Activities of Automotive Industries Applying SiC Devices for Automotive Applications
inferred← citeshttps://doi.org/10.1002/9783527824724.ch3openalex-snapshot
Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates
inferred← citeshttps://doi.org/10.1002/eej.22871openalex-snapshot
Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography
inferred← citeshttps://doi.org/10.1002/pssa.200675469openalex-snapshot
Cathodoluminescence investigation of stacking faults extension in 4H‐SiC
inferred← citeshttps://doi.org/10.1002/pssa.201200501openalex-snapshot
The concept of quasi‐Fermi level and expansion of faulted loops in SiC under minority carrier injection
inferred← citeshttps://doi.org/10.1002/pssa.201900151openalex-snapshot
Annealing and LEEBI Effects on the Stacking Fault Expansion and Shrinking in 4H‐SiC
inferred← citeshttps://doi.org/10.1002/pssa.202000332openalex-snapshot
Informative Aspects of Molten KOH Etch Pits Formed at Basal Plane Dislocations on the Surface of 4H‐SiC
inferred← citeshttps://doi.org/10.1002/pssa.202200119openalex-snapshot
Kink Migration along 30° Si‐Core Partial Dislocations in 4H‐SiC
inferred← citeshttps://doi.org/10.1002/pssb.200844055openalex-snapshot
Optical properties of as‐grown and process‐induced stacking faults in 4H‐SiC
inferred← citeshttps://doi.org/10.1002/pssb.200945056openalex-snapshot
Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique
inferred← citeshttps://doi.org/10.1007/978-1-4020-8422-5_17openalex-snapshot
Some Aspects of the Structural, Mechanical and Electronic Properties of SiC
inferred← citeshttps://doi.org/10.1007/978-1-4614-4337-7_9openalex-snapshot
Radiation-Enhanced Dislocation Glide: The Current Status of Research
inferred← citeshttps://doi.org/10.1007/978-3-031-19722-2_5openalex-snapshot
Applications of Raman, IR, and CL Spectroscopy
inferred← citeshttps://doi.org/10.1007/978-981-96-0340-4_4openalex-snapshot
Preparation of SiC Nuclear Radiation Detectors
inferred← citeshttps://doi.org/10.1007/s11431-020-1678-6openalex-snapshot
Compressive elastic behavior of single-crystalline 4H-silicon carbide (SiC) nanopillars
inferred← citeshttps://doi.org/10.1007/s11664-006-0038-8openalex-snapshot
Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes
inferred← citeshttps://doi.org/10.1007/s11664-007-0311-5openalex-snapshot
Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes
inferred← citeshttps://doi.org/10.1007/s11664-007-0321-3openalex-snapshot
Some Critical Materials and Processing Issues in SiC Power Devices
inferred← citeshttps://doi.org/10.1007/s11664-010-1168-6openalex-snapshot
Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices
inferred← citeshttps://doi.org/10.1007/s11664-010-1192-6openalex-snapshot
Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC
inferred← citeshttps://doi.org/10.1007/s11664-011-1570-8openalex-snapshot
Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers
inferred← citeshttps://doi.org/10.1007/s11664-012-2379-9openalex-snapshot
Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC
inferred← citeshttps://doi.org/10.1007/s11664-018-06901-0openalex-snapshot
Modeling and Evaluation of Stacking Fault Expansion Velocity in Body Diodes of 3.3 kV SiC MOSFET
inferred← citeshttps://doi.org/10.1007/s11664-019-07937-6openalex-snapshot
Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals
inferred← citeshttps://doi.org/10.1007/s11664-020-08133-7openalex-snapshot
Triangular Single Shockley Stacking Fault Analyses on 4H-SiC PiN Diode with Forward Voltage Degradation
inferred← citeshttps://doi.org/10.1007/s11664-021-08762-6openalex-snapshot
X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices
inferred← citeshttps://doi.org/10.1007/s11664-021-09186-yopenalex-snapshot
Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes
inferred← citeshttps://doi.org/10.1007/s11664-023-10440-8openalex-snapshot
Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process
inferred← citeshttps://doi.org/10.1007/s11664-025-11892-wopenalex-snapshot
A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery
inferred← citeshttps://doi.org/10.1007/s11664-025-12135-8openalex-snapshot
A New Double Trench SiC MOSFET Integrated Multifunctional Gates for Improved Reverse Conduction Performance
inferred← citeshttps://doi.org/10.1007/s11664-026-13148-7openalex-snapshot
Nondestructive Identification of Pure Threading Screw Dislocations in GaN Crystals by Combined Birefringence Imaging and Synchrotron X-ray Topography
inferred← citeshttps://doi.org/10.1007/s41230-023-2103-9openalex-snapshot
Review of solution growth techniques for 4H-SiC single crystal
inferred← citeshttps://doi.org/10.1016/b978-0-08-056033-5.00025-2openalex-snapshot
Ab Initio Electronic Structure Calculations for Nuclear Materials
inferred← citeshttps://doi.org/10.1016/b978-0-08-102096-8.00005-7openalex-snapshot
Silicon carbide
inferred← citeshttps://doi.org/10.1016/b978-0-08-102306-8.00002-2openalex-snapshot
SiC material properties
inferred← citeshttps://doi.org/10.1016/b978-0-12-803581-8.00658-5openalex-snapshot
Ab Initio Electronic Structure Calculations for Nuclear Materials
inferred← citeshttps://doi.org/10.1016/b978-0-444-63304-0.00028-7openalex-snapshot
Silicon Carbide Epitaxy
inferred← citeshttps://doi.org/10.1016/j.actamat.2011.09.010openalex-snapshot
Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization
inferred← citeshttps://doi.org/10.1016/j.actamat.2012.02.047openalex-snapshot
4H-SiC band structure investigated by surface photovoltage spectroscopy
inferred← citeshttps://doi.org/10.1016/j.actamat.2014.07.055openalex-snapshot
Deformation-induced phase transformation in 4H–SiC nanopillars
inferred← citeshttps://doi.org/10.1016/j.actamat.2014.08.027openalex-snapshot
Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector
inferred← citeshttps://doi.org/10.1016/j.actamat.2017.07.046openalex-snapshot
Low temperature stacking fault nucleation and expansion from stress concentrators in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.actamat.2021.116746openalex-snapshot
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.cap.2011.01.056openalex-snapshot
Characteristics of various instability in Ni-FALC poly-Si thin film transistors
inferred← citeshttps://doi.org/10.1016/j.chip.2025.100188openalex-snapshot
Degradation mechanism and reliability tests for silicon carbide power metal-oxide semiconductor field-effect transistors: challenges and progress
inferred← citeshttps://doi.org/10.1016/j.commatsci.2017.07.023openalex-snapshot
Molecular dynamics study of deformation and fracture in SiC with angular dependent potential model
inferred← citeshttps://doi.org/10.1016/j.commatsci.2023.112588openalex-snapshot
Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion
inferred← citeshttps://doi.org/10.1016/j.commatsci.2026.114967openalex-snapshot
First-principles energy calculations for steps and vicinal surfaces of polar zincblende silicon carbide by generalizing wedge-geometry method
inferred← citeshttps://doi.org/10.1016/j.cplett.2012.03.107openalex-snapshot
Tuning the HOMO–LUMO gap of SiC quantum dots by surface functionalization
inferred← citeshttps://doi.org/10.1016/j.diamond.2011.07.009openalex-snapshot
Temperature-dependent Raman scattering in round pit of 4H–SiC
inferred← citeshttps://doi.org/10.1016/j.diamond.2016.03.013openalex-snapshot
Single crystal diamond wafers for high power electronics
inferred← citeshttps://doi.org/10.1016/j.ijmecsci.2026.112174openalex-snapshot
Large elasticity and size-dependent fracture of micro-/nanoscale silicon carbide polytypes
inferred← citeshttps://doi.org/10.1016/j.jallcom.2020.155470openalex-snapshot
Radiation-enhanced dislocation glide in 4H-SiC at low temperatures
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2007.05.006openalex-snapshot
Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2007.11.156openalex-snapshot
Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2011.10.009openalex-snapshot
Trapezoid defect in 4H–SiC epilayers
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2014.01.050openalex-snapshot
Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2014.01.078openalex-snapshot
Synchrotron topography studies of the operation of double-ended Frank–Read partial dislocation sources in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2015.02.004openalex-snapshot
Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2016.05.017openalex-snapshot
Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2016.05.018openalex-snapshot
4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2017.08.008openalex-snapshot
Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2019.125151openalex-snapshot
Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2020.125709openalex-snapshot
X-ray topography characterization of gallium nitride substrates for power device development
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2021.126189openalex-snapshot
Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2022.126676openalex-snapshot
Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127405openalex-snapshot
Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2024.127880openalex-snapshot
Structural analysis of stacking fault complex origin in 4H-SiC epitaxial wafer
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2024.127982openalex-snapshot
Advances in defect characterization techniques using polarized light observation in SiC wafers for power devices
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2026.128784openalex-snapshot
Growth and characterization of low-resistivity N-Al co-doped SiC crystals with Al2O3 as the Al source
inferred← citeshttps://doi.org/10.1016/j.jnucmat.2017.05.015openalex-snapshot
Optimization of self-interstitial clusters in 3C-SiC with genetic algorithm
inferred← citeshttps://doi.org/10.1016/j.matchar.2026.116705openalex-snapshot
Quantitative wafer-scale photoelastic mapping of residual stress in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.matlet.2012.05.004openalex-snapshot
Stacking faults at the boundary between 15R- and 4H-polytype in SiC
inferred← citeshttps://doi.org/10.1016/j.mejo.2025.106977openalex-snapshot
An asymmetric trench SiC MOSFET integrated recombination electrode with improved reverse conduction
inferred← citeshttps://doi.org/10.1016/j.micrna.2022.207420openalex-snapshot
A novel SiC superjunction MOSFET with three-level buffer and unipolar channel diode
inferred← citeshttps://doi.org/10.1016/j.micrna.2024.208052openalex-snapshot
4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode
inferred← citeshttps://doi.org/10.1016/j.microrel.2008.10.009openalex-snapshot
Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors
inferred← citeshttps://doi.org/10.1016/j.microrel.2021.114169openalex-snapshot
Recent review on failures in silicon carbide power MOSFETs
inferred← citeshttps://doi.org/10.1016/j.microrel.2023.115264openalex-snapshot
First results on 1.2 kV SiC MOSFET body diode robustness tests
inferred← citeshttps://doi.org/10.1016/j.mseb.2008.11.004openalex-snapshot
Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes
inferred← citeshttps://doi.org/10.1016/j.mssp.2017.10.010openalex-snapshot
Current status and perspectives of ultrahigh-voltage SiC power devices
inferred← citeshttps://doi.org/10.1016/j.mssp.2017.11.003openalex-snapshot
Recent advances in 4H-SiC epitaxy for high-voltage power devices
inferred← citeshttps://doi.org/10.1016/j.mssp.2022.107126openalex-snapshot
Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation
inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107647openalex-snapshot
Characterization of dislocation etch pits by molten KOH etching in n- and p-type 4H–SiC epilayers doped by ion implantation
inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107948openalex-snapshot
Comparative study of methods for counting of dislocations in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107980openalex-snapshot
Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108264openalex-snapshot
Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108315openalex-snapshot
Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108369openalex-snapshot
Stacking faults in 4H–SiC epilayers and IGBTs
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.109147openalex-snapshot
Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.110262openalex-snapshot
Suppression of stacking faults expansion by backside proton implantation into SiC substrates
inferred← citeshttps://doi.org/10.1016/j.pcrysgrow.2016.04.018openalex-snapshot
Bulk and epitaxial growth of silicon carbide
inferred← citeshttps://doi.org/10.1016/j.pedc.2024.100062openalex-snapshot
Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.physb.2009.08.189openalex-snapshot
Characterization of major in-grown stacking faults in 4H-SiC epilayers
inferred← citeshttps://doi.org/10.1016/j.physb.2015.08.038openalex-snapshot
Chloride-based SiC growth on a-axis 4H–SiC substrates
inferred← citeshttps://doi.org/10.1016/j.prostr.2020.01.115openalex-snapshot
First-Principles Analysis of Deformation and Fracture Properties of Semiconductors
inferred← citeshttps://doi.org/10.1016/j.scriptamat.2022.115216openalex-snapshot
X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias
inferred← citeshttps://doi.org/10.1016/j.scriptamat.2025.116994openalex-snapshot
Comprehensive identification of novel origins of single Shockley stacking faults in 4H-SiC using UV irradiation and non-destructive defect characterization
inferred← citeshttps://doi.org/10.1016/j.scriptamat.2025.117123openalex-snapshot
Inclined TEDs with pairs of partial dislocations located away from the basal plane in 4H-SiC epilayers
inferred← citeshttps://doi.org/10.1016/j.scriptamat.2026.117317openalex-snapshot
Release of basal plane dislocations from a helical threading mixed dislocation in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.spmi.2008.10.024openalex-snapshot
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes
inferred← citeshttps://doi.org/10.1016/j.spmi.2008.12.018openalex-snapshot
Electrical property of nonvolatile memory with SiC nano-particles formed in SiO2
inferred← citeshttps://doi.org/10.1016/j.spmi.2016.02.015openalex-snapshot
Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range
inferred← citeshttps://doi.org/10.1016/j.spmi.2016.03.005openalex-snapshot
Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
inferred← citeshttps://doi.org/10.1016/j.spmi.2016.03.029openalex-snapshot
Control of carbon vacancy in SiC toward ultrahigh-voltage power devices
inferred← citeshttps://doi.org/10.1016/j.spmi.2018.05.014openalex-snapshot
Some new insights into the impact of annealing on single stacking faults in 4H-SiC
inferred← citeshttps://doi.org/10.1016/j.sse.2014.02.008openalex-snapshot
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
inferred← citeshttps://doi.org/10.1016/j.tsf.2007.10.091openalex-snapshot
Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition
inferred← citeshttps://doi.org/10.1016/j.tsf.2012.02.013openalex-snapshot
Large area optical characterization of 3 and 4 inches 4H–SiC wafers
inferred← citeshttps://doi.org/10.1016/j.vacuum.2025.114369openalex-snapshot
Suppressing SiC crystal edge decomposition through pore-type crucible
inferred← citeshttps://doi.org/10.1016/j.vacuum.2025.114730openalex-snapshot
Characteristics and behaviors analysis of etch pits in 4H-SiC epilayers by molten KOH etching
inferred← citeshttps://doi.org/10.1016/j.vibspec.2021.103331openalex-snapshot
Thermal stress effects on local electronic properties on N-type GaN crystals in contact with Au/Ti/Cr electrode film by micro-Raman spectroscopy at high temperatures
inferred← citeshttps://doi.org/10.1021/acs.cgd.3c00416openalex-snapshot
Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage
inferred← citeshttps://doi.org/10.1021/acs.cgd.4c00486openalex-snapshot
Wafer-Scale p-Type SiC Single Crystals with High Crystalline Quality
inferred← citeshttps://doi.org/10.1021/acs.cgd.4c00636openalex-snapshot
Three-Dimensional Nondestructive Characterization of Extrinsic Frank-Type Stacking Faults in 4H-SiC Crystals
inferred← citeshttps://doi.org/10.1021/acs.cgd.5c00287openalex-snapshot
Mechanism Reveal of Threading Edge Dislocation Multiplication during the Initial Stage of 4H-SiC Growth
inferred← citeshttps://doi.org/10.1021/acs.cgd.6b00711openalex-snapshot
Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis
inferred← citeshttps://doi.org/10.1021/acs.cgd.9b00141openalex-snapshot
Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations
inferred← citeshttps://doi.org/10.1021/acsnano.0c04945openalex-snapshot
Band Bending and Valence Band Quantization at Line Defects in MoS2
inferred← citeshttps://doi.org/10.1021/cg500830jopenalex-snapshot
Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers
inferred← citeshttps://doi.org/10.1021/nl401590gopenalex-snapshot
Low-Loss, Extreme Subdiffraction Photon Confinement via Silicon Carbide Localized Surface Phonon Polariton Resonators
inferred← citeshttps://doi.org/10.1038/s41598-017-05010-yopenalex-snapshot
Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
inferred← citeshttps://doi.org/10.1038/s41598-020-67900-yopenalex-snapshot
Evolution of lattice distortions in 4H-SiC wafers with varying doping
inferred← citeshttps://doi.org/10.1038/s41598-022-17060-yopenalex-snapshot
Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation
inferred← citeshttps://doi.org/10.1038/s41598-022-23691-yopenalex-snapshot
Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation
inferred← citeshttps://doi.org/10.1039/d4ra04424jopenalex-snapshot
Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC
inferred← citeshttps://doi.org/10.1049/pel2.70050openalex-snapshot
A Novel SiC MOSFET With a Reach‐Through NPN Structure for Enhancing Reverse Performance
inferred← citeshttps://doi.org/10.1063/1.2346135openalex-snapshot
Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes
inferred← citeshttps://doi.org/10.1063/1.2437585openalex-snapshot
Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition
inferred← citeshttps://doi.org/10.1063/1.2713169openalex-snapshot
Screening the built-in electric field in 4H silicon carbide stacking faults
inferred← citeshttps://doi.org/10.1063/1.2719650openalex-snapshot
Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing
inferred← citeshttps://doi.org/10.1063/1.2724791openalex-snapshot
Growth dynamics and characterization of SiC quantum dots synthesized by low-frequency inductively coupled plasma assisted rf magnetron sputtering
inferred← citeshttps://doi.org/10.1063/1.2824391openalex-snapshot
Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC p-i-n diodes
inferred← citeshttps://doi.org/10.1063/1.2960339openalex-snapshot
Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode
inferred← citeshttps://doi.org/10.1063/1.3043433openalex-snapshot
Theoretical consideration of step-flow and two-dimensional nucleation modes in homoepitaxial growth of 4H-SiC on (0001) vicinal surfaces under silicon-rich condition
inferred← citeshttps://doi.org/10.1063/1.3070530openalex-snapshot
Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions
inferred← citeshttps://doi.org/10.1063/1.3095508openalex-snapshot
Triple Shockley type stacking faults in 4H-SiC epilayers
inferred← citeshttps://doi.org/10.1063/1.3194323openalex-snapshot
Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes
inferred← citeshttps://doi.org/10.1063/1.3236579openalex-snapshot
Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers
inferred← citeshttps://doi.org/10.1063/1.3442907openalex-snapshot
Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH1 complex
inferred← citeshttps://doi.org/10.1063/1.3456160openalex-snapshot
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC
inferred← citeshttps://doi.org/10.1063/1.3457789openalex-snapshot
Effect of forward current stress on low frequency noise in 4H–SiC p-n junctions
inferred← citeshttps://doi.org/10.1063/1.3467793openalex-snapshot
On the driving force for recombination-induced stacking fault motion in 4H–SiC
inferred← citeshttps://doi.org/10.1063/1.3551542openalex-snapshot
Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H-SiC epitaxial layers
inferred← citeshttps://doi.org/10.1063/1.3556657openalex-snapshot
UV-blue photoluminescence from close-packed SiC nanocrystal film
inferred← citeshttps://doi.org/10.1063/1.3597226openalex-snapshot
Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC
inferred← citeshttps://doi.org/10.1063/1.3609009openalex-snapshot
Temperature dependence of Raman scattering from 4H-SiC with hexagonal defects
inferred← citeshttps://doi.org/10.1063/1.3646501openalex-snapshot
Non-destructive observation of in-grown stacking faults in 4H-SiC epitaxial layer using mirror electron microscope
inferred← citeshttps://doi.org/10.1063/1.3691595openalex-snapshot
Direct imaging and optical activities of stacking faults in 4H-SiC homoepitaxial films
inferred← citeshttps://doi.org/10.1063/1.3700963openalex-snapshot
Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC
inferred← citeshttps://doi.org/10.1063/1.3702582openalex-snapshot
Microwave-induced transformation of rice husks to SiC
inferred← citeshttps://doi.org/10.1063/1.4720435openalex-snapshot
Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC
inferred← citeshttps://doi.org/10.1063/1.4729326openalex-snapshot
Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing
inferred← citeshttps://doi.org/10.1063/1.4768440openalex-snapshot
Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
inferred← citeshttps://doi.org/10.1063/1.4810909openalex-snapshot
Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging
inferred← citeshttps://doi.org/10.1063/1.4812496openalex-snapshot
X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC
inferred← citeshttps://doi.org/10.1063/1.4812590openalex-snapshot
Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress
inferred← citeshttps://doi.org/10.1063/1.4818306openalex-snapshot
Cathodoluminescence and electron beam induced current investigations of stacking faults mechanically introduced in 4H-SiC in the brittle domain
inferred← citeshttps://doi.org/10.1063/1.4890974openalex-snapshot
Mechanisms of growth and defect properties of epitaxial SiC
inferred← citeshttps://doi.org/10.1063/1.4891834openalex-snapshot
In situ monitoring of stacking fault formation and its carrier lifetime mediation in p -type 4H-SiC
inferred← citeshttps://doi.org/10.1063/1.4895136openalex-snapshot
A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images
inferred← citeshttps://doi.org/10.1063/1.4899985openalex-snapshot
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults
inferred← citeshttps://doi.org/10.1063/1.4906974openalex-snapshot
Nanoparticles and nanorods of silicon carbide from the residues of corn
inferred← citeshttps://doi.org/10.1063/1.4915128openalex-snapshot
Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers
inferred← citeshttps://doi.org/10.1063/1.4943165openalex-snapshot
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
inferred← citeshttps://doi.org/10.1063/1.4945017openalex-snapshot
Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing
inferred← citeshttps://doi.org/10.1063/1.4962717openalex-snapshot
Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes
inferred← citeshttps://doi.org/10.1063/1.4996098openalex-snapshot
Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing
inferred← citeshttps://doi.org/10.1063/1.5009365openalex-snapshot
Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
inferred← citeshttps://doi.org/10.1063/1.5010861openalex-snapshot
Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC
inferred← citeshttps://doi.org/10.1063/1.5031896openalex-snapshot
Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing
inferred← citeshttps://doi.org/10.1063/1.5042561openalex-snapshot
Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC
inferred← citeshttps://doi.org/10.1063/1.5043238openalex-snapshot
Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC
inferred← citeshttps://doi.org/10.1063/1.5074150openalex-snapshot
Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions
inferred← citeshttps://doi.org/10.1063/1.5098101openalex-snapshot
Wide-ranging control of carrier lifetimes in n-type 4H-SiC epilayer by intentional vanadium doping
inferred← citeshttps://doi.org/10.1063/1.5117350openalex-snapshot
Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals
inferred← citeshttps://doi.org/10.1063/1.5140731openalex-snapshot
Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy
inferred← citeshttps://doi.org/10.1063/1.5141029openalex-snapshot
Temperature-dependent stacking fault energies of 4H-SiC: A first-principles study
inferred← citeshttps://doi.org/10.1063/1.5143690openalex-snapshot
Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes
inferred← citeshttps://doi.org/10.1063/5.0004423openalex-snapshot
Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy
inferred← citeshttps://doi.org/10.1063/5.0007219openalex-snapshot
Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals
inferred← citeshttps://doi.org/10.1063/5.0007229openalex-snapshot
Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography
inferred← citeshttps://doi.org/10.1063/5.0010648openalex-snapshot
Modeling the effect of mechanical stress on bipolar degradation in 4H-SiC power devices
inferred← citeshttps://doi.org/10.1063/5.0021764openalex-snapshot
Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes
inferred← citeshttps://doi.org/10.1063/5.0030011openalex-snapshot
Carrier lifetime control by intentional boron doping in aluminum doped p-type 4H-SiC epilayers
inferred← citeshttps://doi.org/10.1063/5.0041287openalex-snapshot
Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers
inferred← citeshttps://doi.org/10.1063/5.0047666openalex-snapshot
Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC
inferred← citeshttps://doi.org/10.1063/5.0063082openalex-snapshot
In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations
inferred← citeshttps://doi.org/10.1063/5.0073402openalex-snapshot
Comparative study of the effect of van der Waals interactions on stacking fault energies in SiC
inferred← citeshttps://doi.org/10.1063/5.0079925openalex-snapshot
Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs
inferred← citeshttps://doi.org/10.1063/5.0084495openalex-snapshot
Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN
inferred← citeshttps://doi.org/10.1063/5.0085118openalex-snapshot
Space charge and trap energy level characteristics of SiC wide bandgap semiconductor
inferred← citeshttps://doi.org/10.1063/5.0100828openalex-snapshot
Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation
inferred← citeshttps://doi.org/10.1063/5.0156457openalex-snapshot
Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals
inferred← citeshttps://doi.org/10.1063/5.0164316openalex-snapshot
First-principles investigation of the effects of excess carriers on the polytype stability and stacking fault energies of SiC
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