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Superlateral growth of a-Ge film by excimer laser annealing

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.111651openalex-snapshot

On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films

inferredcites →https://doi.org/10.1063/1.119194openalex-snapshot

Single-crystal Si films for thin-film transistor devices

inferredcites →https://doi.org/10.1063/1.1402641openalex-snapshot

Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films

inferredcites →https://doi.org/10.1063/1.1591998openalex-snapshot

Location control of crystal grains in excimer laser crystallization of silicon thin films

inferredcites →https://doi.org/10.1063/1.2387136openalex-snapshot

Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

inferredcites →https://doi.org/10.1103/physrevb.43.9851openalex-snapshot

Transient nucleation following pulsed-laser melting of thin silicon films

inferredcites →https://doi.org/10.1109/edl.1986.26372openalex-snapshot

XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

inferredcites →https://doi.org/10.1109/ted.2005.859689openalex-snapshot

Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain

inferredcites →https://doi.org/10.1143/jjap.37.l492openalex-snapshot

A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films

inferredcites →https://doi.org/10.1143/jjap.38.l907openalex-snapshot

A Two-Pass Excimer Laser Annealing Process to Control Amorphous Silicon Crystallization

inferredcites →https://doi.org/10.1143/jjap.45.l970openalex-snapshot

Location Control of Super Lateral Growth Grains in Excimer Laser Crystallization of Silicon Thin Films by Microlight Beam Seeding

inferredcites →https://doi.org/10.1557/jmr.2007.0392openalex-snapshot

Light absorptive underlayer enhanced excimer-laser crystallization of Si thin-film

inferredcites →https://doi.org/10.7567/ssdm.1985.c-3-8lnopenalex-snapshot

XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4813290openalex-extracted

Formation of Metastable Solid Solutions in Bi – Ge Films at Low-Temperature Treatment

inferred← citeshttps://doi.org/10.1002/pssr.202100421openalex-snapshot

High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates

inferred← citeshttps://doi.org/10.1002/pssr.202100509openalex-snapshot

Solid‐Phase Crystallization of GeSn Thin Films on GeO2‐Coated Glass

inferred← citeshttps://doi.org/10.1002/sia.6470openalex-snapshot

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

inferred← citeshttps://doi.org/10.1007/s13391-024-00506-yopenalex-snapshot

Effect of Deposition Temperature on the Electrical Properties of Solid-Phase Crystallized Ge Thin Films

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Au-induced crystallization of amorphous Ge thin films: An indication of the existence of a recrystallization process during growth at deep subeutectic temperature

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2013.03.031openalex-snapshot

Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

inferred← citeshttps://doi.org/10.1016/j.matdes.2023.112116openalex-snapshot

Metal-induced lateral crystallization of germanium thin films

inferred← citeshttps://doi.org/10.1016/j.matdes.2026.116040openalex-snapshot

Photoresponsivity of polycrystalline Ge layers on glass via sequential solid-phase and grain-templated growth

inferred← citeshttps://doi.org/10.1016/j.mssp.2016.10.033openalex-snapshot

Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing

inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107433openalex-snapshot

Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing

inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107692openalex-snapshot

Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation

inferred← citeshttps://doi.org/10.1016/j.optmat.2024.116528openalex-snapshot

Effect of copper-induced crystallization on structural, morphological, optical, and electrical properties of thin germanium films

inferred← citeshttps://doi.org/10.1016/j.sse.2011.01.037openalex-snapshot

Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

inferred← citeshttps://doi.org/10.1016/j.tsf.2009.10.084openalex-snapshot

Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed

inferred← citeshttps://doi.org/10.1016/j.tsf.2012.10.023openalex-snapshot

Flash-lamp-induced explosive crystallization of amorphous germanium films leaving behind periodic microstructures

inferred← citeshttps://doi.org/10.1016/j.tsf.2013.08.040openalex-snapshot

Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer

inferred← citeshttps://doi.org/10.1016/j.tsf.2013.09.071openalex-snapshot

Growth of preferred orientation Ge film using inductively coupled plasma-assisted DC magnetron sputtering at low temperature

inferred← citeshttps://doi.org/10.1021/acs.cgd.1c00470openalex-snapshot

Laser Crystallization of Amorphous Ge Thin Films via a Nanosecond Pulsed Infrared Laser

inferred← citeshttps://doi.org/10.1021/acs.cgd.1c01083openalex-snapshot

Three-Dimensionally Orientation-Controlled Ge Rods on an Insulator Formed by Low-Temperature Ni-Induced Lateral Crystallization

inferred← citeshttps://doi.org/10.1021/acs.cgd.3c00163openalex-snapshot

Interfacial Nucleation Control in Amorphous GeSn Thin Films Using Bilayer Structure

inferred← citeshttps://doi.org/10.1021/acs.cgd.4c00196openalex-snapshot

Grain-Boundary-Aligned Ge Thin Films Formed by Au-Induced Lateral Crystallization with a Multilayer Structure

inferred← citeshttps://doi.org/10.1021/acs.cgd.5b00060openalex-snapshot

Improved Surface Quality of the Metal-Induced Crystallized Ge Seed Layer and Its Influence on Subsequent Epitaxy

inferred← citeshttps://doi.org/10.1021/acsaelm.1c00997openalex-snapshot

Record-High Hole Mobility Germanium on Flexible Plastic with Controlled Interfacial Reaction

inferred← citeshttps://doi.org/10.1021/acsaelm.2c01381openalex-snapshot

n-Type Polycrystalline Germanium Layers Formed by Impurity-Doped Solid-Phase Growth

inferred← citeshttps://doi.org/10.1021/cg4005533openalex-snapshot

Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process

inferred← citeshttps://doi.org/10.1038/s41427-025-00611-wopenalex-snapshot

Hydrogen passivation effects on polycrystalline germanium thin films

inferred← citeshttps://doi.org/10.1038/s41598-017-17273-6openalex-snapshot

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

inferred← citeshttps://doi.org/10.1038/s41598-018-33161-zopenalex-snapshot

Improving carrier mobility of polycrystalline Ge by Sn doping

inferred← citeshttps://doi.org/10.1038/s41598-019-53084-7openalex-snapshot

High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization

inferred← citeshttps://doi.org/10.1063/1.3231925openalex-snapshot

Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique

inferred← citeshttps://doi.org/10.1063/1.3478242openalex-snapshot

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

inferred← citeshttps://doi.org/10.1063/1.4744962openalex-snapshot

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

inferred← citeshttps://doi.org/10.1063/1.4894397openalex-snapshot

In situ investigation of explosive crystallization in a-Ge: Experimental determination of the interface response function using dynamic transmission electron microscopy

inferred← citeshttps://doi.org/10.1063/1.4922266openalex-snapshot

High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

inferred← citeshttps://doi.org/10.1063/1.4955059openalex-snapshot

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

inferred← citeshttps://doi.org/10.1063/1.4971825openalex-snapshot

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

inferred← citeshttps://doi.org/10.1063/1.5024307openalex-snapshot

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)

inferred← citeshttps://doi.org/10.1063/1.5084191openalex-snapshot

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility

inferred← citeshttps://doi.org/10.1063/1.5096798openalex-snapshot

Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization

inferred← citeshttps://doi.org/10.1063/5.0020489openalex-snapshot

Layer-exchange crystallization for low-temperature (∼450 °C) formation of n-type tensile-strained Ge on insulator

inferred← citeshttps://doi.org/10.1063/5.0052142openalex-snapshot

Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies

inferred← citeshttps://doi.org/10.1063/5.0145370openalex-snapshot

Fabrication of an atomically smooth Ge(111) surface by Au-induced crystallization at 170 °C

inferred← citeshttps://doi.org/10.1063/5.0147022openalex-snapshot

Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam

inferred← citeshttps://doi.org/10.1063/5.0152677openalex-snapshot

High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures

inferred← citeshttps://doi.org/10.1063/5.0229016openalex-snapshot

Progress and perspectives on polycrystalline germanium thin films: Advances in solid-phase crystallization

inferred← citeshttps://doi.org/10.1088/0957-4484/22/27/275604openalex-snapshot

Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control

inferred← citeshttps://doi.org/10.1109/jeds.2019.2914831openalex-snapshot

Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization

inferred← citeshttps://doi.org/10.1109/jeds.2023.3270634openalex-snapshot

High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs

inferred← citeshttps://doi.org/10.1109/led.2018.2791506openalex-snapshot

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

inferred← citeshttps://doi.org/10.1109/led.2018.2873945openalex-snapshot

High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization

inferred← citeshttps://doi.org/10.1109/led.2023.3275181openalex-snapshot

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

inferred← citeshttps://doi.org/10.1116/6.0001774openalex-snapshot

Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °C)

inferred← citeshttps://doi.org/10.1134/s1063782615060160openalex-snapshot

Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties

inferred← citeshttps://doi.org/10.1143/apex.3.075603openalex-snapshot

(100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique

inferred← citeshttps://doi.org/10.1143/jjap.49.04da08openalex-snapshot

High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth

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Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform

inferred← citeshttps://doi.org/10.1149/2.005303jssopenalex-snapshot

Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral-Crystallization

inferred← citeshttps://doi.org/10.3390/met14080900openalex-snapshot

Formation of Metastable Solid Solutions in Bi-Ge Films during Low-Temperature Treatment

inferred← citeshttps://doi.org/10.35848/1347-4065/ab9cd9openalex-snapshot

Effects of hydrogen on structure and crystallization behavior of sputter-deposited amorphous germanium films

inferred← citeshttps://doi.org/10.35848/1347-4065/ab9cdaopenalex-snapshot

High performance thin-film transistors fabricated on a single crystal Si strip by micro-chevron laser beam scanning method

inferred← citeshttps://doi.org/10.35848/1347-4065/aba63dopenalex-snapshot

Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization

inferred← citeshttps://doi.org/10.35848/1347-4065/ac2419openalex-snapshot

Crystallization of Ge thin films by Au-induced layer exchange: effect of Au layer thickness on Ge crystal orientation

inferred← citeshttps://doi.org/10.35848/1347-4065/ac4686openalex-snapshot

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators

inferred← citeshttps://doi.org/10.35848/1347-4065/ad09e9openalex-snapshot

Infinite lateral growth of (001) single crystal strip in Ge film on SiO2 by micro-chevron laser scanning method

inferred← citeshttps://doi.org/10.35848/1347-4065/adc9b8openalex-snapshot

Continuous single-crystal germanium films using elevated-laser-liquid-phase-epitaxy technique for monolithic 3D integration

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Four-step heating process for solid-phase crystallization of Ge leading to high carrier mobility

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Removal of Ge Islands in al-induced layer-exchanged Ge thin films on glass substrates by selective etching technique

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Elaboration of GaAs solar cells based on textured substrates on glass

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High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation

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High hole mobility (≥500 cm2 V−1 s−1) polycrystalline Ge films on GeO2-coated glass and plastic substrates

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Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

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Advanced solid-phase crystallization for high-hole mobility (450 cm2V−1s−1) Ge thin film on insulator

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Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange

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Metal-induced low-temperature crystallization of electrodeposited Ge thin film

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Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

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