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Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/j.physb.2009.08.178openalex-snapshot
Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)m
inferredcites →https://doi.org/10.1016/j.tsf.2009.10.129openalex-snapshot
Steady-state photoconductivity of amorphous In–Ga–Zn–O
inferredcites →https://doi.org/10.1038/asiamat.2010.5openalex-snapshot
Material characteristics and applications of transparent amorphous oxide semiconductors
inferredcites →https://doi.org/10.1063/1.2942403openalex-snapshot
Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO
inferredcites →https://doi.org/10.1063/1.2977865openalex-snapshot
Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
inferredcites →https://doi.org/10.1063/1.2990657openalex-snapshot
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
inferredcites →https://doi.org/10.1063/1.3159831openalex-snapshot
Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
inferredcites →https://doi.org/10.1063/1.3187532openalex-snapshot
Gate-bias stress in amorphous oxide semiconductors thin-film transistors
inferredcites →https://doi.org/10.1063/1.3464964openalex-snapshot
O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
inferredcites →https://doi.org/10.1103/physrevb.71.125210openalex-snapshot
Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO
inferredcites →https://doi.org/10.1103/physrevb.72.035215openalex-snapshot
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
inferredcites →https://doi.org/10.1103/physrevb.76.165202openalex-snapshot
Native point defects in ZnO
inferredcites →https://doi.org/10.1103/physrevb.81.115311openalex-snapshot
Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
inferredcites →https://doi.org/10.1109/jdt.2009.2020611openalex-snapshot
Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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inferred← citeshttps://doi.org/10.1063/1.4891541openalex-snapshot
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Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics
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Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C
inferred← citeshttps://doi.org/10.1063/1.4916643openalex-snapshot
Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors
inferred← citeshttps://doi.org/10.1063/1.4922005openalex-snapshot
Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor
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Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors
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Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors
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Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor
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Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure
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Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor
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Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress
inferred← citeshttps://doi.org/10.1063/1.4999923openalex-snapshot
H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress
inferred← citeshttps://doi.org/10.1063/1.5117771openalex-snapshot
Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon
inferred← citeshttps://doi.org/10.1063/5.0185405openalex-snapshot
Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states
inferred← citeshttps://doi.org/10.1080/15980316.2011.563058openalex-snapshot
Highly stable amorphous indium–gallium–zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure
inferred← citeshttps://doi.org/10.1080/15980316.2025.2541731openalex-snapshot
Photo response of a-IGZO thin films as a function of annealing temperature
inferred← citeshttps://doi.org/10.1088/0022-3727/46/4/045101openalex-snapshot
Investigation of defect generation and annihilation in IGZO TFTs during practical stress conditions: illumination and electrical bias
inferred← citeshttps://doi.org/10.1088/0022-3727/46/5/055104openalex-snapshot
Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
inferred← citeshttps://doi.org/10.1088/0022-3727/49/24/24lt01openalex-snapshot
Low-temperature, high-stability, flexible thin-film transistors with a novel Sc x In 1− x O 3 semiconductor
inferred← citeshttps://doi.org/10.1088/1361-6463/ac12f9openalex-snapshot
Li-ion dual modulation in all-inorganic ZrLiO/InLiO aqueous solution-processed thin-film transistor for optoelectronic artificial synapse
inferred← citeshttps://doi.org/10.1088/1361-6560/ad1999openalex-snapshot
Measurements of the noise power spectrum for digital x-ray imaging devices
inferred← citeshttps://doi.org/10.1088/1361-6641/aaedd4openalex-snapshot
Multi- and single-step in situ microwave annealing as low-thermal-budget techniques for solution-processed indium–gallium–zinc oxide thin films
inferred← citeshttps://doi.org/10.1088/1361-6641/abbd0copenalex-snapshot
Deep level defects and their instability in PLD-grown IGZO (In 2 Ga 2 Zn 5 O 11 ) thin films studied by thermally stimulated current spectroscopy
inferred← citeshttps://doi.org/10.1088/1361-6641/ac46f7openalex-snapshot
The effect of passivation-layer process to amorphous InGaZnO thin-film transistors using back-channel etch method
inferred← citeshttps://doi.org/10.1103/physrevmaterials.2.074601openalex-snapshot
Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
inferred← citeshttps://doi.org/10.1109/access.2022.3173290openalex-snapshot
Linear Lag Models and Measurements of the Lag Correction Factors
inferred← citeshttps://doi.org/10.1109/am-fpd.2015.7173215openalex-snapshot
Effect of top gate bias on NBIS in dual gate a-IGZO TFTs
inferred← citeshttps://doi.org/10.1109/am-fpd.2016.7543660openalex-snapshot
Electrical stability of flexible a-IGZO TFT under strained condition
inferred← citeshttps://doi.org/10.1109/infoseee.2014.6946214openalex-snapshot
Nearly fully transparent InGaZnO thin film transistors with Mo-InGaZnO electrodes: The possibility of homogeneous InGaZnO based thin film transistors
inferred← citeshttps://doi.org/10.1109/ipfa47161.2019.8984822openalex-snapshot
Light-Illumination-Induced Degradation and Its Long-Term Recovery in Indium-Tin-Zinc Oxide Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/jdt.2014.2328335openalex-snapshot
Characterization and Modeling of a-IGZO TFTs
inferred← citeshttps://doi.org/10.1109/jdt.2015.2488291openalex-snapshot
The Current Behaviors of the Amorphous In-Ga-Zn-O Thin-Film Transistor Under Varying Illumination Conditions
inferred← citeshttps://doi.org/10.1109/jeds.2019.2946383openalex-snapshot
A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination
inferred← citeshttps://doi.org/10.1109/jeds.2022.3163774openalex-snapshot
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs
inferred← citeshttps://doi.org/10.1109/jeds.2025.3598941openalex-snapshot
Enhanced Mobility and Stability of Amorphous IZO TFTs With Homojunction Formation and Back-Channel Engineering
inferred← citeshttps://doi.org/10.1109/jproc.2015.2408052openalex-snapshot
An Overview of Process and Product Requirements for Next Generation Thin Film Electronics, Advanced Touch Panel Devices, and Ultra High Barriers
inferred← citeshttps://doi.org/10.1109/led.2011.2119290openalex-snapshot
High-Performance Drain-Offset a-IGZO Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/led.2012.2190260openalex-snapshot
A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets
inferred← citeshttps://doi.org/10.1109/led.2012.2193655openalex-snapshot
A Novel Depletion-Mode a-IGZO TFT Shift Register With a Node-Shared Structure
inferred← citeshttps://doi.org/10.1109/led.2013.2248115openalex-snapshot
Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress
inferred← citeshttps://doi.org/10.1109/led.2013.2259574openalex-snapshot
Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing
inferred← citeshttps://doi.org/10.1109/led.2013.2290740openalex-snapshot
Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving
inferred← citeshttps://doi.org/10.1109/led.2016.2623318openalex-snapshot
High-Performance Solution-Processed Zinc–Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays
inferred← citeshttps://doi.org/10.1109/led.2017.2654199openalex-snapshot
Impact of Ti Content on Structural and Electrical Characteristics of High- $\kappa$ Yb2TiO5 $\alpha$ -InZnSnO Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/led.2017.2686898openalex-snapshot
Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress
inferred← citeshttps://doi.org/10.1109/led.2018.2805705openalex-snapshot
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 $\text{cm}^{2}/\text{V} \cdot \text{s}$ for High-Speed Operation
inferred← citeshttps://doi.org/10.1109/led.2020.3018750openalex-snapshot
Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating
inferred← citeshttps://doi.org/10.1109/led.2021.3099066openalex-snapshot
Photo-Detectivity Modulation in Complementary Light-to-Frequency Conversion Circuits via Oxygen Vacancy Controlled Amorphous Indium–Gallium–Zinc Oxide Films
inferred← citeshttps://doi.org/10.1109/led.2023.3258960openalex-snapshot
Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n − Region Under Negative Bias Stress and Light Irradiation
inferred← citeshttps://doi.org/10.1109/ted.2011.2180908openalex-snapshot
Debye Length and Active Layer Thickness-Dependent Performance Variations of Amorphous Oxide-Based TFTs
inferred← citeshttps://doi.org/10.1109/ted.2012.2208971openalex-snapshot
Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
inferred← citeshttps://doi.org/10.1109/ted.2014.2318055openalex-snapshot
The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors
inferred← citeshttps://doi.org/10.1109/ted.2014.2337307openalex-snapshot
Comprehensive Studies on the Carrier Transporting Property and Photo-Bias Instability of Sputtered Zinc Tin Oxide Thin Film Transistors
inferred← citeshttps://doi.org/10.1109/ted.2015.2392763openalex-snapshot
Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity
inferred← citeshttps://doi.org/10.1109/ted.2015.2511883openalex-snapshot
Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier
inferred← citeshttps://doi.org/10.1109/ted.2016.2589240openalex-snapshot
Suppression in the Negative Bias Illumination Instability of ZnSnO Thin-Film Transistors Using Hafnium Doping by Dual-Target Magnetron Cosputtering System
inferred← citeshttps://doi.org/10.1109/ted.2016.2612630openalex-snapshot
Improved Negative Bias Illumination Stability and Thermal Stability of HfZnSnO/ZnSnO Thin-Film Transistor Using Double-Channel Structure by Cosputtering
inferred← citeshttps://doi.org/10.1109/ted.2016.2615883openalex-snapshot
Drain Current Response to Fast Illumination Pulse for Amorphous In–Ga–Zn-O Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/ted.2017.2766148openalex-snapshot
Origin of Electrical Instabilities in Self-Aligned Amorphous In–Ga–Zn–O Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/ted.2019.2899141openalex-snapshot
Effects of Ultraviolet Light on the Dual-Sweep $I$ – $V$ Curve of a-InGaZnO4 Thin-Film Transistor
inferred← citeshttps://doi.org/10.1109/ted.2019.2911635openalex-snapshot
Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor
inferred← citeshttps://doi.org/10.1109/ted.2019.2931635openalex-snapshot
Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C
inferred← citeshttps://doi.org/10.1109/ted.2020.3012592openalex-snapshot
Performance Modulation in All-Solution-Driven InCaOₓ/HfGdOₓ Thin-Film Transistors and Exploration in Low-Voltage-Operated Logic Circuits
inferred← citeshttps://doi.org/10.1109/ted.2020.3032383openalex-snapshot
Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length
inferred← citeshttps://doi.org/10.1109/ted.2021.3090737openalex-snapshot
In-Situ Investigation of the Gate Bias Instability of Tungsten-Doped Indium Zinc Oxide Thin Film Transistor by Simultaneous Ultraviolet and Thermal Treatment
inferred← citeshttps://doi.org/10.1109/ted.2022.3204521openalex-snapshot
Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer
inferred← citeshttps://doi.org/10.1109/ted.2023.3273511openalex-snapshot
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors
inferred← citeshttps://doi.org/10.1109/ted.2023.3288502openalex-snapshot
Enhanced Stability of SiZTO TFT Under Positive Voltage and Light Negative Voltage Stress and Modified Hysteresis of the CNTs/SiZTO CMOS Inverter by Si Doping
inferred← citeshttps://doi.org/10.1109/ted.2025.3545007openalex-snapshot
The Investigation of the Hysteresis and Reliability Mechanism of Amorphous Oxide Semiconductor Thin-Film Transistors Applied in Dynamic Random Access Memory
inferred← citeshttps://doi.org/10.1116/1.4832329openalex-snapshot
Effect of sputter power on the photobias stability of zinc-tin-oxide field-effect transistors
inferred← citeshttps://doi.org/10.1116/6.0001643openalex-snapshot
Plasma-enhanced atomic layer deposition of aluminum-indium oxide thin films and associated device applications
inferred← citeshttps://doi.org/10.1117/12.2290625openalex-snapshot
Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy
inferred← citeshttps://doi.org/10.1139/cjp-2013-0622openalex-snapshot
Photocurrent analysis of In–Ga–Zn–O (IGZO) film
inferred← citeshttps://doi.org/10.1149/1.3584088openalex-snapshot
Light-Enhanced Bias Stress Effect on Amorphous In-Ga-Zn-O Thin-film Transistor with Lights of Varying Colors
inferred← citeshttps://doi.org/10.1149/2.001307jssopenalex-snapshot
Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics
inferred← citeshttps://doi.org/10.1149/2.001409jssopenalex-snapshot
Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress
inferred← citeshttps://doi.org/10.1149/2.0021701jssopenalex-snapshot
Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination Stress
inferred← citeshttps://doi.org/10.1149/2.004202sslopenalex-snapshot
Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process
inferred← citeshttps://doi.org/10.1149/2.011402jssopenalex-snapshot
Highly Reliable Polysilsesquioxane Passivation Layer fora-InGaZnO Thin-Film Transistors
inferred← citeshttps://doi.org/10.1149/2.0131603jssopenalex-snapshot
Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors
inferred← citeshttps://doi.org/10.1149/2.0161410jssopenalex-snapshot
Comparison of Illumination Effect on Amorphous Indium Gallium Zinc Oxide and a-Si Thin Film Transistors
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