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Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssa.200881303openalex-snapshot
Electronic structure of the amorphous oxide semiconductor a‐InGaZnO4–x: Tauc–Lorentz optical model and origins of subgap states
inferredcites →https://doi.org/10.1002/pssa.200983772openalex-snapshot
Subgap states, doping and defect formation energies in amorphous oxide semiconductor a‐InGaZnO 4 studied by density functional theory
inferredcites →https://doi.org/10.1016/j.tsf.2009.10.132openalex-snapshot
Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing
inferredcites →https://doi.org/10.1038/nature03090openalex-snapshot
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
inferredcites →https://doi.org/10.1063/1.2927306openalex-snapshot
Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
inferredcites →https://doi.org/10.1063/1.3020714openalex-snapshot
Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
inferredcites →https://doi.org/10.1063/1.321593openalex-snapshot
The electrical properties of polycrystalline silicon films
inferredcites →https://doi.org/10.1063/1.3699372openalex-snapshot
Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O
inferredcites →https://doi.org/10.1109/jdt.2009.2021582openalex-snapshot
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
inferredcites →https://doi.org/10.1149/1.3555070openalex-snapshot
Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In–Ga–Zn–O Channels
inferredcites →https://doi.org/10.1149/2.011301jssopenalex-snapshot
Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O
inferredcites →https://doi.org/10.1201/b13071-13openalex-snapshot
Amorphous In-Ga-Zn-O Thin Film Transistors: Fabrication and Properties
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Comparison between Effects of PECVD-SiOxand Thermal ALD-AlOxPassivation Layers on Characteristics of Amorphous InGaZnO TFTs
inferred← citeshttps://doi.org/10.20517/ss.2024.35openalex-snapshot
High-performance metal oxide TFTs for flexible displays: materials, fabrication, architecture, and applications
inferred← citeshttps://doi.org/10.2109/jcersj2.15283openalex-snapshot
Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu
inferred← citeshttps://doi.org/10.23919/am-fpd49417.2020.9224483openalex-snapshot
Electronic defects in amorphous oxide semiconductor and recent development
inferred← citeshttps://doi.org/10.3390/mi13060839openalex-snapshot
Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors
inferred← citeshttps://doi.org/10.3390/nano12193481openalex-snapshot
One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
inferred← citeshttps://doi.org/10.3390/nano14201679openalex-snapshot
A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics
inferred← citeshttps://doi.org/10.35848/1882-0786/ab9478openalex-snapshot
Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material
inferred← citeshttps://doi.org/10.7498/aps.67.20180074openalex-snapshot
Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors
inferred← citeshttps://doi.org/10.7498/aps.72.20222272openalex-snapshot
Effect of passivation layer on back channel etching InGaZnO thin film transistors
inferred← citeshttps://doi.org/10.7567/1347-4065/ab1604openalex-snapshot
Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression
inferred← citeshttps://doi.org/10.7567/apex.11.061103openalex-snapshot
Dimethylaluminum hydride for atomic layer deposition of Al 2 O 3 passivation for amorphous InGaZnO thin-film transistors
inferred← citeshttps://doi.org/10.7567/apex.7.114103openalex-snapshot
Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress
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