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Very efficient void formation in ion implanted InSb

https://doi.org/10.1063/1.91308
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.2210310158openalex-snapshot
Hall effect and sheet resistivity measurements on ion-bombarded InSb
inferredcites →https://doi.org/10.1002/pssa.2210470141openalex-snapshot
Amorphisation and recrystallisation of InSb ion implanted layers
inferredcites →https://doi.org/10.1016/0038-1101(75)90152-5openalex-snapshot
Planar InSb photodiodes fabricated by Be and Mg ion implantation
inferredcites →https://doi.org/10.1016/b978-0-12-002901-3.50009-xopenalex-snapshot
Ion Implantation in Semiconductors
inferredcites →https://doi.org/10.1063/1.1653216openalex-snapshot
n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENT
inferredcites →https://doi.org/10.1080/00337577008235058openalex-snapshot
Ion implantation in InAs and InSb
inferredcites →https://doi.org/10.1080/00337577708233106openalex-snapshot
Dose rate and orientation dependence of damage induced by Xe and Cd lmplants in InSb
inferredcites →https://doi.org/10.1103/physrev.108.901openalex-snapshot
Radiation-Induced Expansion of Semiconductors

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4732032openalex-extracted
Enabling Tailored Nanoporous Germanium by Quantifying the Evolution of Structural Properties During Self-Irradiation
inferred← citeshttps://doi.org/10.1002/pssa.2210960223openalex-snapshot
Swelling, Strain, and Radiation Damage of He+ Implanted GaP
inferred← citeshttps://doi.org/10.1002/pssa.2211120108openalex-snapshot
Investigation of Lattice Strain in Proton-Irradiated Semiconductor Materials
inferred← citeshttps://doi.org/10.1002/pssa.2211240102openalex-snapshot
Proton Beam Modification of Selected AIIIBVCompounds
inferred← citeshttps://doi.org/10.1002/pssa.2211570108openalex-snapshot
Analysis of implantation-induced damage and amorphization of GaSb
inferred← citeshttps://doi.org/10.1007/978-94-009-6216-3_2openalex-snapshot
Recoil Implantation and Ion Mixing
inferred← citeshttps://doi.org/10.1007/s00339-013-7911-0openalex-snapshot
From holes to sponge at irradiated Ge surfaces with increasing ion energy—an effect of defect kinetics?
inferred← citeshttps://doi.org/10.1016/0022-3093(81)90172-1openalex-snapshot
Topology of covalent non-crystalline solids II: Medium-range order in chalcogenide alloys and ASi(Ge)
inferred← citeshttps://doi.org/10.1016/0029-554x(81)90789-8openalex-snapshot
Molecular effect in the expansion of ion implanted InSb
inferred← citeshttps://doi.org/10.1016/0167-5087(82)90116-8openalex-snapshot
Oxidation of an InSb layer after ion implantation
inferred← citeshttps://doi.org/10.1016/0167-5087(83)91060-8openalex-snapshot
Radiation damage in InSb single crystals by α-particle bombardment
inferred← citeshttps://doi.org/10.1016/0168-583x(85)90596-8openalex-snapshot
Changes in InSb as a result of ion implantation
inferred← citeshttps://doi.org/10.1016/0168-583x(88)90282-0openalex-snapshot
Radiation damage in InSb by alpha particle implantation
inferred← citeshttps://doi.org/10.1016/0168-583x(92)96122-fopenalex-snapshot
Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling
inferred← citeshttps://doi.org/10.1016/0168-583x(93)96177-eopenalex-snapshot
Swelling of GaSb at low energies (1.3–14.5 keV)
inferred← citeshttps://doi.org/10.1016/0168-583x(94)95865-3openalex-snapshot
Lattice sites of ion implanted Li in indium antimonide
inferred← citeshttps://doi.org/10.1016/0168-583x(95)01457-8openalex-snapshot
SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing
inferred← citeshttps://doi.org/10.1016/j.apsusc.2016.05.156openalex-snapshot
Fabrication of high aspect ratio nanocell lattices by ion beam irradiation
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.160171openalex-snapshot
Enabling tailored nanoporous germanium by quantifying the evolution of structural properties during self-irradiation
inferred← citeshttps://doi.org/10.1016/j.jpcs.2020.109769openalex-snapshot
Stoichiometry-dependent porosity by ion irradiation: In(1–x)Al(x)Sb films
inferred← citeshttps://doi.org/10.1016/j.mssp.2022.107062openalex-snapshot
Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry
inferred← citeshttps://doi.org/10.1016/j.nimb.2005.06.060openalex-snapshot
EXAFS comparison of crystalline/continuous and amorphous/porous GaSb
inferred← citeshttps://doi.org/10.1016/j.nimb.2005.08.182openalex-snapshot
Irradiation fluence dependent microstructural evolution of porous InSb
inferred← citeshttps://doi.org/10.1016/j.nimb.2011.01.009openalex-snapshot
Etch-free formation of porous silicon by high-energy ion irradiation
inferred← citeshttps://doi.org/10.1016/j.vacuum.2023.112123openalex-snapshot
Ion beam flux dependence of nanoporous structure formation induced by FIB in germanium
inferred← citeshttps://doi.org/10.1016/j.vacuum.2026.115455openalex-snapshot
Basic conceptual scenarios for changes of the surface germanium substrate level during ion irradiation
inferred← citeshttps://doi.org/10.1016/s0042-207x(97)00106-1openalex-snapshot
Defect dynamics studies in ion irradiated cuprate superconductors
inferred← citeshttps://doi.org/10.1016/s0080-8784(08)60111-8openalex-snapshot
Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors
inferred← citeshttps://doi.org/10.1016/s0168-583x(96)00568-xopenalex-snapshot
Void formation in Ge induced by high energy heavy ion irradiation
inferred← citeshttps://doi.org/10.1016/s0921-4526(99)02870-7openalex-snapshot
Far-infrared absorption and Raman scattering studies in MeV C+- and C2+-implanted InSb(111) crystals
inferred← citeshttps://doi.org/10.1016/s0927-796x(01)00028-6openalex-snapshot
Ion implantation into GaN
inferred← citeshttps://doi.org/10.1016/s1369-8001(00)00121-9openalex-snapshot
Be- and Mg-ion implantation-induced damage in InSb
inferred← citeshttps://doi.org/10.1063/1.102009openalex-snapshot
Radiation-induced formation of cavities in amorphous germanium
inferred← citeshttps://doi.org/10.1063/1.106173openalex-snapshot
Anomalous behavior of ion-implanted GaSb
inferred← citeshttps://doi.org/10.1063/1.1290722openalex-snapshot
Ion-beam-induced porosity of GaN
inferred← citeshttps://doi.org/10.1063/1.1330221openalex-snapshot
Ion-beam-induced dissociation and bubble formation in GaN
inferred← citeshttps://doi.org/10.1063/1.1390487openalex-snapshot
Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation
inferred← citeshttps://doi.org/10.1063/1.331636openalex-snapshot
The effects of self-ion bombardment (30–500 keV) on the surface topography of single-crystal germanium
inferred← citeshttps://doi.org/10.1063/1.3372757openalex-snapshot
Nanostructuring in Ge by self-ion implantation
inferred← citeshttps://doi.org/10.1063/1.341952openalex-snapshot
Ion implantation damage and annealing in InAs, GaSb, and GaP
inferred← citeshttps://doi.org/10.1063/1.344329openalex-snapshot
Implantation characteristics of InSb
inferred← citeshttps://doi.org/10.1063/1.353150openalex-snapshot
Secondary ion mass spectrometry generates swelling of GaSb: Depth resolution and secondary ion yields
inferred← citeshttps://doi.org/10.1063/1.354090openalex-snapshot
Characteristics of implantation-induced damage in GaSb
inferred← citeshttps://doi.org/10.1063/1.5002084openalex-snapshot
Fibrous structure in GaSb surfaces irradiated with fast Cu cluster ions
inferred← citeshttps://doi.org/10.1063/1.92694openalex-snapshot
Void formation in annealed proton-bombarded GaAs
inferred← citeshttps://doi.org/10.1063/5.0307315openalex-snapshot
Comparative analysis of surface morphologies for porous structure development under ion beam irradiation in GaSb, InSb, and Ge
inferred← citeshttps://doi.org/10.1080/00337578108229885openalex-snapshot
High density cascade effects
inferred← citeshttps://doi.org/10.1080/01418619108225344openalex-snapshot
Amorphization, morphological instability and crystallization of Krypton ion irradiated germanium
inferred← citeshttps://doi.org/10.1080/01422448308226424openalex-snapshot
A simultaneous study of lattice expansion and swelling in proton-bombarded gap single crystals
inferred← citeshttps://doi.org/10.1080/09500839.2019.1567947openalex-snapshot
Tilted InSb nanostructures fabricated by off-normal ion beam irradiation
inferred← citeshttps://doi.org/10.1080/0950830310001639020openalex-snapshot
Elastic instability in Ge1-xSixalloys under heavy-ion irradiation
inferred← citeshttps://doi.org/10.1080/10420158908217869openalex-snapshot
Transmission electron microscopy of InSb following alpha particle irradiation
inferred← citeshttps://doi.org/10.1080/14786430412331320008openalex-snapshot
Ion irradiation-induced disordering of semiconductors: defect structures and applications
inferred← citeshttps://doi.org/10.1088/0022-3727/31/17/018openalex-snapshot
Profile of implanted in potassium titanyl phosphate by the , C nuclear reaction
inferred← citeshttps://doi.org/10.1088/0957-4484/21/32/325602openalex-snapshot
Ion irradiation-induced bimodal surface morphology changes in InSb
inferred← citeshttps://doi.org/10.1088/0957-4484/23/39/395604openalex-snapshot
Nanoporous Ge electrode as a template for nano-sized ( < 5 nm) Au aggregates
inferred← citeshttps://doi.org/10.1103/physrevb.78.054111openalex-snapshot
Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions
inferred← citeshttps://doi.org/10.1103/physrevb.84.104108openalex-snapshot
Structural modifications of low-energy heavy-ion irradiated germanium
inferred← citeshttps://doi.org/10.1117/12.2505472openalex-snapshot
Annealing effect on the photodiode properties of Be implanted InSb
inferred← citeshttps://doi.org/10.1201/9780849332166.ch3openalex-snapshot
Ion-Beam Processing
inferred← citeshttps://doi.org/10.1201/9781420004823.ch3openalex-snapshot
Ion-Beam Processing
inferred← citeshttps://doi.org/10.1557/jmr.1991.2109openalex-snapshot
Cavity formation and plastic flow ofa–Si: H during heavy ion bombardment
inferred← citeshttps://doi.org/10.1557/jmr.2009.0287openalex-snapshot
Formation of GaSb core-shell nanofibers by a thermally induced phase decomposition process
inferred← citeshttps://doi.org/10.1557/jmr.2013.24openalex-snapshot
Nanostructured germanium prepared via ion beam modification
inferred← citeshttps://doi.org/10.1557/proc-27-223openalex-snapshot
Implantation Induced Filamentary Structures
inferred← citeshttps://doi.org/10.1557/proc-27-335openalex-snapshot
A Channeling Study on Mg Implanted InSb Single Crystals
inferred← citeshttps://doi.org/10.3390/nano7070180openalex-snapshot
Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
inferred← citeshttps://doi.org/10.3390/nano7080204openalex-snapshot
Nanoporous Structure Formation on the Surface of InSb by Ion Beam Irradiation
inferred← citeshttps://doi.org/10.35848/1347-4065/ab705dopenalex-snapshot
Fabrication of ordered nanostructures on the Ge surface using electron-beam lithography and ion beam irradiation
inferred← citeshttps://doi.org/10.7567/1347-4065/ab1ad2openalex-snapshot
Effect of temperature on GaSb nanocell lattice fabrication by void formation and development utilizing a focused ion beam
inferred← citeshttps://doi.org/10.7567/jjap.57.091301openalex-snapshot
Nanoporous structure formation on the surface of Ge by ion beam irradiation
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