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A predictive model for high-frequency operation of two-dimensional transistors from first-principles

https://doi.org/10.1063/5.0030633
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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2D MoSe2 Transistor with Polymer‐Brush/Channel Interface
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Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors
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Continuity equation based nonquasi-static charge model for independent double gate MOSFET
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An analytical model for the Non-Quasi-Static small-signal behaviour of submicron MOSFETs
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Optimization algorithm for the generation of ONCV pseudopotentials
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Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET
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A physics-based, small-signal model for graphene field effect transistors
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Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
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Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies
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Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
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Contact Engineering High-Performance n-Type MoTe2 Transistors
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Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart
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Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions
inferredcites →https://doi.org/10.1021/acsnano.9b08834openalex-snapshot
Black Phosphorus High-Frequency Transistors with Local Contact Bias
inferredcites →https://doi.org/10.1021/nl5029717openalex-snapshot
Black Phosphorus Radio-Frequency Transistors
inferredcites →https://doi.org/10.1021/nn203715copenalex-snapshot
Integrated Circuits and Logic Operations Based on Single-Layer MoS 2
inferredcites →https://doi.org/10.1021/nn501226zopenalex-snapshot
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
inferredcites →https://doi.org/10.1021/nn502362bopenalex-snapshot
Electrical Transport Properties of Single-Layer WS2
inferredcites →https://doi.org/10.1021/nn502553mopenalex-snapshot
Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling
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A microprocessor based on a two-dimensional semiconductor
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High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
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Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus
inferredcites →https://doi.org/10.1038/nmat4452openalex-snapshot
Electrical contacts to two-dimensional semiconductors
inferredcites →https://doi.org/10.1038/nnano.2010.279openalex-snapshot
Single-layer MoS2 transistors
inferredcites →https://doi.org/10.1038/nnano.2014.35openalex-snapshot
Black phosphorus field-effect transistors
inferredcites →https://doi.org/10.1038/s41427-018-0062-1openalex-snapshot
The ambipolar transport behavior of WSe2 transistors and its analogue circuits
inferredcites →https://doi.org/10.1038/s41467-018-07135-8openalex-snapshot
Scalable high performance radio frequency electronics based on large domain bilayer MoS2
inferredcites →https://doi.org/10.1038/s41565-017-0035-5openalex-snapshot
Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
inferredcites →https://doi.org/10.1038/s41597-019-0097-3openalex-snapshot
2DMatPedia, an open computational database of two-dimensional materials from top-down and bottom-up approaches
inferredcites →https://doi.org/10.1038/s41699-018-0073-3openalex-snapshot
An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors
inferredcites →https://doi.org/10.1038/s41699-019-0130-6openalex-snapshot
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
inferredcites →https://doi.org/10.1038/s41928-018-0058-4openalex-snapshot
Field-effect transistors made from solution-grown two-dimensional tellurene
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Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography
inferredcites →https://doi.org/10.1038/s41928-020-0460-6openalex-snapshot
Analogue two-dimensional semiconductor electronics
inferredcites →https://doi.org/10.1039/c5nr00355eopenalex-snapshot
Electro-mechanical anisotropy of phosphorene
inferredcites →https://doi.org/10.1039/c9nr03441bopenalex-snapshot
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
inferredcites →https://doi.org/10.1063/1.4901527openalex-snapshot
Exfoliated multilayer MoTe2 field-effect transistors
inferredcites →https://doi.org/10.1063/1.4960526openalex-snapshot
Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles
inferredcites →https://doi.org/10.1063/1.4971404openalex-snapshot
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities
inferredcites →https://doi.org/10.1063/1.5109057openalex-snapshot
Phonon limited anisotropic quantum transport in phosphorene field effect transistors
inferredcites →https://doi.org/10.1088/2053-1583/4/1/011011openalex-snapshot
Effect of aging-induced disorder on the quantum transport properties of few-layer WTe 2
inferredcites →https://doi.org/10.1088/2053-1583/aacfc1openalex-snapshot
The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals
inferredcites →https://doi.org/10.1103/physrev.101.944openalex-snapshot
Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
inferredcites →https://doi.org/10.1103/physrevb.13.5188openalex-snapshot
Special points for Brillouin-zone integrations
inferredcites →https://doi.org/10.1103/physrevb.88.085117openalex-snapshot
Optimized norm-conserving Vanderbilt pseudopotentials
inferredcites →https://doi.org/10.1103/physrevb.95.075436openalex-snapshot
Phonon-limited carrier mobility in monolayer black phosphorus
inferredcites →https://doi.org/10.1103/physrevb.98.115416openalex-snapshot
Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview
inferredcites →https://doi.org/10.1103/physrevlett.112.176801openalex-snapshot
Strain-Induced Gap Modification in Black Phosphorus
inferredcites →https://doi.org/10.1103/physrevlett.116.246401openalex-snapshot
Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus
inferredcites →https://doi.org/10.1103/physrevlett.125.177701openalex-snapshot
Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility
inferredcites →https://doi.org/10.1103/physrevlett.77.3865openalex-snapshot
Generalized Gradient Approximation Made Simple
inferredcites →https://doi.org/10.1109/iedm.2003.1269320openalex-snapshot
High performance CMOS fabricated on hybrid substrate with different crystal orientations
inferredcites →https://doi.org/10.1109/jssc.1986.1052614openalex-snapshot
A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs
inferredcites →https://doi.org/10.1109/led.2018.2830400openalex-snapshot
A New Velocity Saturation Model of MoS2 Field-Effect Transistors
inferredcites →https://doi.org/10.1109/proc.1967.6123openalex-snapshot
Carrier mobilities in silicon empirically related to doping and field
inferredcites →https://doi.org/10.1109/t-ed.1980.20072openalex-snapshot
Transient analysis of MOS transistors
inferredcites →https://doi.org/10.1109/ted.2003.818596openalex-snapshot
Quasi-static and nonquasi-static compact mosfet models based on symmetric linearization of the bulk and inversion charges
inferredcites →https://doi.org/10.1109/ted.2003.819053openalex-snapshot
A new approach to model nonquasi-static (NQS) effects for mosfets-part I: large-signal analysis
inferredcites →https://doi.org/10.1109/ted.2003.819054openalex-snapshot
A new approach to model nonquasi-static (NQS) effects for mosfets-part II: small-signal analysis
inferredcites →https://doi.org/10.1109/ted.2006.880226openalex-snapshot
Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation
inferredcites →https://doi.org/10.1109/ted.2006.880827openalex-snapshot
A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis
inferredcites →https://doi.org/10.1109/ted.2011.2163517openalex-snapshot
Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications
inferredcites →https://doi.org/10.1109/ted.2012.2186636openalex-snapshot
Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations
inferredcites →https://doi.org/10.1109/ted.2013.2257793openalex-snapshot
Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors
inferredcites →https://doi.org/10.1109/ted.2013.2262943openalex-snapshot
Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry
inferredcites →https://doi.org/10.1109/ted.2014.2365028openalex-snapshot
A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect
inferredcites →https://doi.org/10.1109/ted.2017.2699969openalex-snapshot
Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors
inferredcites →https://doi.org/10.1109/ted.2017.2736444openalex-snapshot
A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications
inferredcites →https://doi.org/10.1109/ted.2018.2797172openalex-snapshot
A New Holistic Model of 2-D Semiconductor FETs
inferredcites →https://doi.org/10.1109/ted.2018.2854902openalex-snapshot
Modeling of Electron Devices Based on 2-D Materials
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Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation
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A Physics-Based, SPICE (Simulation Program with Integrated Circuit Emphasis)-Compatible Non-Quasi-Static MOS (Metal-Oxide-Semiconductor) Transient Model Based on the Collocation Method

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications
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DC and RF Performance of an N-channel Monolayer Black Phosphorus Nanoribbon Transistor
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Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor
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