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Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Development of epitaxial Al x Sc 1− x N for artificially structured metal/semiconductor superlattice metamaterials

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An accurate semi-empirical equation for sputtering yields, II: for neon, argon and xenon ions

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Piezoelectricity and Biocompatibility of Flexible Sc x Al(1– x )N Thin Films for Compliant MEMS Transducers

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Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM

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Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

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AlScN: A III-V semiconductor based ferroelectric

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Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method

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Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

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Ferroelectric memories

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Memory technology—a primer for material scientists

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A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-$\mu{\hbox {m}}$ Technology

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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

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Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

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Ferroelectric Memories

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Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

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Study of Properties of AlN Thin Films Deposited by Reactive Magnetron Sputtering

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Current Status of Ferroelectric Random-Access Memory

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Preparation of scandium aluminum nitride thin films by using scandium aluminum alloy sputtering target and design of experiments

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Ferroelectricity in Layered Perovskites as a Model of Ultra-Thin Films

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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