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Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for crossbar array memory applications
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications
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Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament
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Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
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The structural and optical properties of ZnO/Si thin films by RTA treatments
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Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode
inferredcites →https://doi.org/10.1016/j.mee.2019.111033openalex-snapshot
Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors
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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
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X-ray photoelectron spectroscopy: Towards reliable binding energy referencing
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Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application
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Structural and mechanical evolution of reactively and non-reactively sputtered Zr–Al–N thin films during annealing
inferredcites →https://doi.org/10.1016/j.tsf.2006.03.020openalex-snapshot
Properties of ZrNx films with x>1 deposited by reactive radiofrequency magnetron sputtering
inferredcites →https://doi.org/10.1016/j.tsf.2008.03.003openalex-snapshot
Monitoring of crystallization and the effect of the deposition rate, hydrogen content and annealing process on the crystallization of hot wire chemical vapor deposited hydrogenated amorphous silicon (a-Si:H) films
inferredcites →https://doi.org/10.1016/j.vacuum.2006.07.018openalex-snapshot
Structural and mechanical properties of ZrN films prepared by ion beam sputtering with varying N2/Ar ratio and substrate temperature
inferredcites →https://doi.org/10.1016/s0042-207x(02)00244-0openalex-snapshot
Rapid thermal annealing effects on plasma deposited SiOx:H films
inferredcites →https://doi.org/10.1016/s0257-8972(03)00679-0openalex-snapshot
Study of ZrN layers deposited by reactive magnetron sputtering
inferredcites →https://doi.org/10.1021/acsami.8b12385openalex-snapshot
Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application
inferredcites →https://doi.org/10.1038/nmat2023openalex-snapshot
Nanoionics-based resistive switching memories
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Resistive switching materials for information processing
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Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness
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Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid
inferredcites →https://doi.org/10.1039/c8ce00966jopenalex-snapshot
Diverse resistive switching behaviors of AlN thin films with different orientations
inferredcites →https://doi.org/10.1039/c9cp03322jopenalex-snapshot
Using photoelectron spectroscopy to observe oxygen spillover to zirconia
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Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
inferredcites →https://doi.org/10.1063/1.2802553openalex-snapshot
Trap filled limit voltage (VTFL) and V2 law in space charge limited currents
inferredcites →https://doi.org/10.1063/1.3481076openalex-snapshot
Bipolar resistance switching driven by tunnel barrier modulation in TiOx/AlOx bilayered structure
inferredcites →https://doi.org/10.1088/0022-3727/42/5/055112openalex-snapshot
Resistive switching characteristics of MnOx-based ReRAM
inferredcites →https://doi.org/10.1088/1361-6641/ab2324openalex-snapshot
Memory state protected from leakage current in Ti/SiN/NiN/Pt bilayer resistive random-access memory devices for array applications
inferredcites →https://doi.org/10.1103/physrev.103.1648openalex-snapshot
Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps
inferredcites →https://doi.org/10.1103/physrevlett.92.178302openalex-snapshot
Nonvolatile Memory with Multilevel Switching: A Basic Model
inferredcites →https://doi.org/10.1103/physrevlett.95.266403openalex-snapshot
Interfaces of Correlated Electron Systems: Proposed Mechanism for Colossal Electroresistance
inferredcites →https://doi.org/10.1109/led.2014.2367542openalex-snapshot
All-Metal-Nitride RRAM Devices
inferredcites →https://doi.org/10.1109/led.2020.2981529openalex-snapshot
ZrN-Based Flexible Resistive Switching Memory
inferredcites →https://doi.org/10.1109/ted.2017.2777986openalex-snapshot
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
inferredcites →https://doi.org/10.1116/1.3646147openalex-snapshot
Zirconium nitride films deposited in (Ar + N2 + H2) sputtering atmosphere: Optical, structural, and electrical properties
inferredcites →https://doi.org/10.1186/s11671-017-2411-3openalex-snapshot
Fabrication, Characterization and Cytotoxicity of Spherical-Shaped Conjugated Gold-Cockle Shell Derived Calcium Carbonate Nanoparticles for Biomedical Applications
inferredcites →https://doi.org/10.1186/s11671-018-2708-xopenalex-snapshot
Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation
inferredcites →https://doi.org/10.3390/ma13184201openalex-snapshot
Improved Intrinsic Nonlinear Characteristics of Ta2O5/Al2O3-Based Resistive Random-Access Memory for High-Density Memory Applications
inferredcites →https://doi.org/10.5573/jsts.2016.16.5.664openalex-snapshot
Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1002/aelm.202200870openalex-snapshot
Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory
inferred← citeshttps://doi.org/10.1002/aisy.202200325openalex-snapshot
Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation
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High uniformity and stability of 1S1R directly stacked for high‐density cross‐point memory applications
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Structural morphological and electrical analysis of Pr- And La-doped magnesium ferrites
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Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system
inferred← citeshttps://doi.org/10.1016/j.apsusc.2021.152164openalex-snapshot
Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect
inferred← citeshttps://doi.org/10.1016/j.ceramint.2023.02.117openalex-snapshot
Ultra-low operation current and abnormal bipolar switching phenomena of hydrogen-passivated HfO2 memristive devices for low power artificial neural network applications
inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.12.222openalex-snapshot
Chemical vapor deposition of zirconium oxynitride thin films for SERS applications
inferred← citeshttps://doi.org/10.1016/j.jeurceramsoc.2025.117330openalex-snapshot
Advancements in nitridation of TiO2 layers: Mechanisms, techniques, and applications for TiN thin films
inferred← citeshttps://doi.org/10.1016/j.matdes.2021.109845openalex-snapshot
Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108805openalex-snapshot
Improved resistive switching characteristics observed in amorphous boron nitride-based RRAM device via oxygen doping: A study based on bulk and interface traps analysis
inferred← citeshttps://doi.org/10.1016/j.mtadv.2023.100430openalex-snapshot
Innovative process to obtain thin films and micro-nanostructured ZrN films from a photo-structurable ZrO2 sol-gel using rapid thermal nitridation
inferred← citeshttps://doi.org/10.1016/j.snb.2022.132993openalex-snapshot
Gas detection and recovery characteristics at room temperature observed in a Zr3N4-based memristor sensor array
inferred← citeshttps://doi.org/10.1016/j.tsf.2022.139542openalex-snapshot
Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
inferred← citeshttps://doi.org/10.1021/acsaelm.2c01350openalex-snapshot
Exploring the Physical Properties Related to Resistive Switching Events in HfO2-Based RRAM Devices with an Analytical Framework
inferred← citeshttps://doi.org/10.1021/acsaelm.6c00293openalex-snapshot
Interface-Driven Bipolar Resistive Switching with Intrinsic Self-Rectifying Behavior in a p-LaCrO 3 /n-Si Heterostructure
inferred← citeshttps://doi.org/10.1039/d3nr05935aopenalex-snapshot
Simulation of the resistance switching performance and synaptic behavior of TiO 2 -based RRAM devices with CoFe 2 O 4 insertion layers
inferred← citeshttps://doi.org/10.1063/5.0084085openalex-snapshot
Stochastic behavior of an interface-based memristive device
inferred← citeshttps://doi.org/10.1063/5.0102076openalex-snapshot
Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level
inferred← citeshttps://doi.org/10.1063/5.0283706openalex-snapshot
Superior rectification self-rectifying memristors with self-recovery capabilities enabled by GaOx/InOx heterostructures
inferred← citeshttps://doi.org/10.1063/5.0310756openalex-snapshot
Recent progress of nitride materials for nonvolatile memory and neuromorphic applications
inferred← citeshttps://doi.org/10.1088/1361-6641/acc2dfopenalex-snapshot
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer
inferred← citeshttps://doi.org/10.21203/rs.3.rs-1069104/v1openalex-snapshot
Stochastic behaviour of an interface-based memristive device
inferred← citeshttps://doi.org/10.3389/fnins.2021.660894openalex-snapshot
Synaptic Plasticity in Memristive Artificial Synapses and Their Robustness Against Noisy Inputs
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