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Triple layer heterojunction Ga2O3/NiO/SiC for ultrafast, high-response ultraviolet image sensing
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Ga2O3 hole blocking layer for suppressing Vis-NIR response in p-Si/ZnO heterojunction photodetectors
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108648openalex-snapshot
An ultraviolet photodetector based on In2O3/β-Ga2O3 heterojunction
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109418openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.mtphys.2023.101279openalex-snapshot
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Plasmonically-boosted high-performance UV self-biased photodetector based on SiC-based low-dimensional heterojunction via Pt nanostructures deposition
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Ultrafast Ultraviolet Optoelectronic Logic Gate Devices with Ultralow Energy Consumption
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Ultrafast Multifunctional Photodetector Based on the NiAl2O4/4H-SiC Heterojunction
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Ultraviolet detection and imaging of one-dimensional cesium copper iodine single crystals synthesized by gradient crystallization
inferred← citeshttps://doi.org/10.1063/5.0244086openalex-snapshot
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High-performance multifunctional solar-blind photodetector based on Gd-doped perovskite rare-earth nickelate heterojunctions
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Ultracompact Temperature-Compensated All-Fiber Ultraviolet Sensor Based on CdZnSe/ZnSe/ZnS Quantum Dots Sealed in Liquid Cavity
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