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Two-temperature principle for evaluating electrothermal performance of GaN HEMTs

https://doi.org/10.1063/5.0189262
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.fmre.2022.06.007openalex-snapshot
Ultra-efficient and parameter-free computation of submicron thermal transport with phonon Boltzmann transport equation
inferredcites →https://doi.org/10.1016/j.ijheatmasstransfer.2017.09.048openalex-snapshot
Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs
inferredcites →https://doi.org/10.1016/j.ijheatmasstransfer.2020.119992openalex-snapshot
The effect of GaN epilayer thickness on the near-junction thermal resistance of GaN-on-diamond devices
inferredcites →https://doi.org/10.1016/j.ijheatmasstransfer.2023.124284openalex-snapshot
Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method
inferredcites →https://doi.org/10.1016/j.ijthermalsci.2015.10.037openalex-snapshot
Ballistic-diffusive heat conduction in multiply-constrained nanostructures
inferredcites →https://doi.org/10.1016/j.ssc.2019.03.013openalex-snapshot
Fundamental limits for near-junction conduction cooling of high power GaN-on-diamond devices
inferredcites →https://doi.org/10.1063/1.4757607openalex-snapshot
An alternative approach to efficient simulation of micro/nanoscale phonon transport
inferredcites →https://doi.org/10.1063/1.4964711openalex-snapshot
Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity
inferredcites →https://doi.org/10.1063/1.4983761openalex-snapshot
A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors
inferredcites →https://doi.org/10.1063/1.5123726openalex-snapshot
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
inferredcites →https://doi.org/10.1063/1.5133105openalex-snapshot
Thermal transport properties of GaN with biaxial strain and electron-phonon coupling
inferredcites →https://doi.org/10.1063/5.0056271openalex-snapshot
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
inferredcites →https://doi.org/10.1063/5.0061354openalex-snapshot
GaN-based power devices: Physics, reliability, and perspectives
inferredcites →https://doi.org/10.1103/physrevapplied.19.014007openalex-snapshot
Quantitative Analysis of Nonequilibrium Phonon Transport Near a Nanoscale Hotspot
inferredcites →https://doi.org/10.1109/edtm53872.2022.9798009openalex-snapshot
Self-heating in Short-channel GaN HEMTs: Maximum Channel Temperature and Equivalent Channel Temperature
inferredcites →https://doi.org/10.1109/led.2014.2379664openalex-snapshot
High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
inferredcites →https://doi.org/10.1109/t-ed.1975.18267openalex-snapshot
Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
inferredcites →https://doi.org/10.1109/t-ed.1983.21207openalex-snapshot
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
inferredcites →https://doi.org/10.1109/ted.2005.843966openalex-snapshot
Velocity Overshoot Effects and Scaling Issues in III–V Nitrides
inferredcites →https://doi.org/10.1109/ted.2018.2791959openalex-snapshot
Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires
inferredcites →https://doi.org/10.1109/ted.2019.2922221openalex-snapshot
Thermal Spreading Resistance in Ballistic-Diffusive Regime for GaN HEMTs
inferredcites →https://doi.org/10.1109/ted.2019.2926742openalex-snapshot
Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs
inferredcites →https://doi.org/10.1109/ted.2020.3003847openalex-snapshot
Modeling Bias Dependence of Self-Heating in GaN HEMTs Using Two Heat Sources
inferredcites →https://doi.org/10.1109/ted.2022.3227894openalex-snapshot
Bias Dependence of Non-Fourier Heat Spreading in GaN HEMTs
inferredcites →https://doi.org/10.1615/annualrevheattransfer.2015011335openalex-snapshot
NEAR-JUNCTION THERMAL MANAGEMENT: THERMAL CONDUCTION IN GALLIUM NITRIDE COMPOSITE SUBSTRATES
inferredcites →https://doi.org/10.29292/jics.v8i2.376openalex-snapshot
Reliability Concerns due to Self-Heating effects in GaN HEMTs
inferredcites →https://doi.org/10.30919/esee8c149openalex-snapshot
A Review of Simulation Methods in Micro/Nanoscale Heat Conduction

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4835749openalex-extracted
Thermal Boundary Conductance of Metal–Diamond Interfaces Predicted by Machine Learning Interatomic Potentials
inferred← citeshttps://doi.org/10.1016/j.applthermaleng.2025.126293openalex-snapshot
Effects of heating strategies and ballistic transport on the thermal conduction in fin field-effect transistors
inferred← citeshttps://doi.org/10.1016/j.ijheatmasstransfer.2024.126227openalex-snapshot
Thermal boundary conductance of metal–diamond interfaces predicted by machine learning interatomic potentials
inferred← citeshttps://doi.org/10.1016/j.micrna.2025.208113openalex-snapshot
Analysis of ballistic thermal resistance in FinFETs considering Joule heating effects
inferred← citeshttps://doi.org/10.1016/j.micrna.2025.208512openalex-snapshot
Branch-resolved nonequilibrium phonon transport in GaN HEMTs via nongray multi-speed lattice Boltzmann method
inferred← citeshttps://doi.org/10.1016/j.surfin.2025.106424openalex-snapshot
Heat transfer characteristics of GaN-substrate heterointerface in GaN HEMT devices: Analysis and regulation strategies
inferred← citeshttps://doi.org/10.1063/5.0260480openalex-snapshot
High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation
inferred← citeshttps://doi.org/10.1063/5.0281609openalex-snapshot
Advances in thermal phonon engineering and thermal management
inferred← citeshttps://doi.org/10.1063/5.0282034openalex-snapshot
Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs
inferred← citeshttps://doi.org/10.1063/5.0295152openalex-snapshot
Optimal layer thickness and junction temperature of GaN HEMTs based on bias-dependent non-uniform heat source model
inferred← citeshttps://doi.org/10.1063/5.0309190openalex-snapshot
Modulating self-heating effects in FinFETs through doping engineering
inferred← citeshttps://doi.org/10.1088/1361-648x/adeef2openalex-snapshot
Optimal hotspot-coolant distance of embedded cooling with heat spreading, size and interfacial effects
inferred← citeshttps://doi.org/10.1103/physrevb.109.245302openalex-snapshot
Thermal boundary conductance and thermal conductivity strongly depend on nearby environment
inferred← citeshttps://doi.org/10.1109/icept67137.2025.11157372openalex-snapshot
High-temperature Resistant Wafer-level Temporary Bonding by W Release Layer for Diamond Growth
inferred← citeshttps://doi.org/10.1109/ted.2025.3546594openalex-snapshot
Modulating Self-Heating Effects in GaN HEMTs Using Slant Field Plate
inferred← citeshttps://doi.org/10.1109/ted.2025.3629594openalex-snapshot
Electron Velocity Modulation and Short-Channel Effect Impact on High-Frequency Performance in Sub-100 nm AlGaN/GaN HFETs
inferred← citeshttps://doi.org/10.3390/electronics14224430openalex-snapshot
A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives
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