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Insights into negative differential resistance in MoS2 Esaki diodes: A first-principles perspective

https://doi.org/10.1103/physrevb.102.115415

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Pseudopotentials periodic table: From H to Pu

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Modulation of Electronic Structure of Armchair MoS2 Nanoribbon

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Electrically Tunable Bandgaps in Bilayer MoS 2

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Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

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Homogenous Tunnel Diode Based on Two-Dimensional Molybdenum Disulfide with Light Induced n+ Doping

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Multicontrol Over Graphene–Molecule Hetereojunctions

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Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

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Single-layer MoS2 transistors

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Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors

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Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

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A generalized Poisson solver for first-principles device simulations

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Gate field effects on the topological insulator BiSbTeSe2 interface

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Electrical resistance of disordered one-dimensional lattices

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Direct calculation of the tunneling current

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The SIESTA method for ab initio order- N materials simulation

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QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

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New Phenomenon in Narrow Germanium p − n Junctions

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Tunneling from an Independent-Particle Point of View

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Self-Consistent Equations Including Exchange and Correlation Effects

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Special points for Brillouin-zone integrations

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Projector augmented-wave method

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Ab initiopseudopotential method for the calculation of conductance in quantum wires

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Ballistic conductance of magnetic Co and Ni nanowires with ultrasoft pseudopotentials

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Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene

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Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

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Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

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Landauer formula for the current through an interacting electron region

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Generalized Gradient Approximation Made Simple

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The theory and properties of randomly disordered crystals and related physical systems

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VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data

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Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs

inferredcites →https://doi.org/10.1109/ted.2012.2226729openalex-snapshot

Direct Band-to-Band Tunneling in Reverse Biased $ \hbox{MoS}_{2}$ Nanoribbon p-n Junctions

inferredcites →https://doi.org/10.1109/ted.2014.2312939openalex-snapshot

Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

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Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

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Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Analysis and prediction of dark current mechanisms in Si:P blocked impurity band (BIB) infrared detectors

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Computational design of tunnel diodes with negative differential resistance and ultrahigh peak-to-valley current ratio based on two-dimensional cold metals: The case of Nb Si 2 N 4 / Hf Si 2 N 4 / Nb Si 2 N 4 lateral heterojunction diode

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Pure valley current and negative differential resistance in optoelectronic superlattices based on monolayer transition metal dichalcogenides

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Cold Source Diodes With Sub-Unity Ideality Factor and Giant Negative Differential Resistance

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