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Theory of semiconductor heterojunctions: The role of quantum dipoles

https://doi.org/10.1103/physrevb.30.4874
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0038-1101(62)90115-6openalex-snapshot
Experiments on Ge-GaAs heterojunctions
inferredcites →https://doi.org/10.1016/0040-6090(83)90566-7openalex-snapshot
Theory of semiconductor heterojunctions
inferredcites →https://doi.org/10.1049/ep.1970.0039openalex-snapshot
Physics of Semiconductor Devices
inferredcites →https://doi.org/10.1103/physrev.115.809openalex-snapshot
Analytic Properties of Bloch Waves and Wannier Functions
inferredcites →https://doi.org/10.1103/physrev.138.a1689openalex-snapshot
Theory of Surface States
inferredcites →https://doi.org/10.1103/physrevb.10.448openalex-snapshot
Wannier functions in crystals with surfaces
inferredcites →https://doi.org/10.1103/physrevb.10.4973openalex-snapshot
Surface-induced charge disturbances in filled bands
inferredcites →https://doi.org/10.1103/physrevb.15.2154openalex-snapshot
Ionicity and the theory of Schottky barriers
inferredcites →https://doi.org/10.1103/physrevb.16.2642openalex-snapshot
Theory of the energy-band lineup at an abrupt semiconductor heterojunction
inferredcites →https://doi.org/10.1103/physrevb.17.699openalex-snapshot
Phase rule for the semiconductor-vacuum interface
inferredcites →https://doi.org/10.1103/physrevb.20.1454openalex-snapshot
Green's functions for surface physics
inferredcites →https://doi.org/10.1103/physrevb.28.1944openalex-snapshot
Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers
inferredcites →https://doi.org/10.1103/physrevb.29.3740openalex-snapshot
Parabolic quantum wells with the GaAs−AlxGa1−xAs system
inferredcites →https://doi.org/10.1103/physrevb.9.1981openalex-snapshot
Impurity states between two bands
inferredcites →https://doi.org/10.1103/physrevlett.42.662openalex-snapshot
Semiconductor Charge Densities with Hard-Core and Soft-Core Pseudopotentials
inferredcites →https://doi.org/10.1103/physrevlett.44.420openalex-snapshot
Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
inferredcites →https://doi.org/10.1103/physrevlett.51.1783openalex-snapshot
Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
inferredcites →https://doi.org/10.1103/physrevlett.52.1246openalex-snapshot
Independence of Fermi-Level Position and Valence-Band Edge Discontinuity at GaAs-Ge(100) Interfaces
inferredcites →https://doi.org/10.1103/physrevlett.52.141openalex-snapshot
In SituInvestigation of Band Bending during Formation of GaAs-Ge Heterostructures
inferredcites →https://doi.org/10.1103/physrevlett.52.465openalex-snapshot
Schottky Barrier Heights and the Continuum of Gap States
inferredcites →https://doi.org/10.1116/1.568995openalex-snapshot
Prediction of semiconductor heterojunction discontinuities from bulk band structures
inferredcites →https://doi.org/10.1116/1.569312openalex-snapshot
Elementary theory of heterojunctions
inferredcites →https://doi.org/10.1116/1.570215openalex-snapshot
New and unified model for Schottky barrier and III–V insulator interface states formation
inferredcites →https://doi.org/10.1116/1.571130openalex-snapshot
XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependence

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Introduction
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Introduction
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Heterojunctions: Definite breakdown of the electron affinity rule
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Tight-binding theory of heterojunction band lineups and interface dipoles
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Semiconductor heterojunctions: a rigorous new model
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Prediction of band discontinuities in semiconductor heterojunctions: A simple model
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Oxidation of cleaved InAs(1 1 0) surfaces at room temperature: Surface band-bending and ionization energy
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Electrical characterization of a superlattice
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Band lineups at the GaSb-AlxGa1−xSb hetero-junction: Experimental evidence for a new common anion rule
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Quasiparticle calculation of valence band offset of AlAs-GaAs(001)
inferred← citeshttps://doi.org/10.1016/0038-1098(88)91063-0openalex-snapshot
Band offsets in SiSi1−xGex and GeSi1−xGex strained heterojunctions
inferred← citeshttps://doi.org/10.1016/0038-1098(92)90410-bopenalex-snapshot
Intrinsic and extrinsic charge neutrality levels in semiconductors: an Empirical approach
inferred← citeshttps://doi.org/10.1016/0038-1098(94)00730-6openalex-snapshot
The extended-LAPW-based k · p method for complex band structure calculations
inferred← citeshttps://doi.org/10.1016/0038-1101(86)90029-8openalex-snapshot
Semiconductor heterojunction topics: Introduction and overview
inferred← citeshttps://doi.org/10.1016/0038-1101(86)90030-4openalex-snapshot
Controlling heterojunction band discontinuities: A surface physicist's approach
inferred← citeshttps://doi.org/10.1016/0038-1101(86)90031-6openalex-snapshot
On the band offsets of AlGaAs/GaAs and beyond
inferred← citeshttps://doi.org/10.1016/0038-1101(87)90072-4openalex-snapshot
A review of models for heterojunction band offsets
inferred← citeshttps://doi.org/10.1016/0038-1101(87)90073-6openalex-snapshot
Heterojunctions: Some knowns and unknowns
inferred← citeshttps://doi.org/10.1016/0038-1101(89)90036-1openalex-snapshot
A consistent model for semiconductor heterojunctions in equilibrium
inferred← citeshttps://doi.org/10.1016/0038-1101(90)90169-fopenalex-snapshot
Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs
inferred← citeshttps://doi.org/10.1016/0038-1101(91)90113-dopenalex-snapshot
Optimization of GaAs-on-Silicon MESFET structures
inferred← citeshttps://doi.org/10.1016/0038-1101(94)90264-xopenalex-snapshot
Evidence of non-commutativity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
inferred← citeshttps://doi.org/10.1016/0039-6028(86)90857-5openalex-snapshot
Calculation of Schottky barrier heights from semiconductor band structures
inferred← citeshttps://doi.org/10.1016/0039-6028(86)90862-9openalex-snapshot
Metal contacts to semiconductors, indium phosphide and cadmium telluride
inferred← citeshttps://doi.org/10.1016/0039-6028(86)90874-5openalex-snapshot
Do we understand heterojunction band discontinuities?
inferred← citeshttps://doi.org/10.1016/0039-6028(86)90881-2openalex-snapshot
Defective heterojunction models
inferred← citeshttps://doi.org/10.1016/0039-6028(86)90885-xopenalex-snapshot
Electronic structure of (100) semiconductor heterojunctions
inferred← citeshttps://doi.org/10.1016/0039-6028(86)91036-8openalex-snapshot
Optical investigations of superlattices
inferred← citeshttps://doi.org/10.1016/0039-6028(90)90362-copenalex-snapshot
Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions
inferred← citeshttps://doi.org/10.1016/0039-6028(92)90022-xopenalex-snapshot
The Ba/Si(100)-2 × 1 interface
inferred← citeshttps://doi.org/10.1016/0039-6028(92)90023-yopenalex-snapshot
The Ba/Si(100)-2 × 1 interface
inferred← citeshttps://doi.org/10.1016/0039-6028(92)91374-kopenalex-snapshot
Photoemission studies of semiconductor interfaces: electronic structure and barrier heights
inferred← citeshttps://doi.org/10.1016/0039-6028(94)90004-3openalex-snapshot
Chemical interactions and Schottky barrier determinations at the Mg/Si(100) interface studied using X-ray photoelectron spectroscopy
inferred← citeshttps://doi.org/10.1016/0039-6028(95)00327-4openalex-snapshot
Photoemission investigation of bismuth thin films on GaSb(110)
inferred← citeshttps://doi.org/10.1016/0040-6090(88)90153-8openalex-snapshot
Physical properties of II–VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition
inferred← citeshttps://doi.org/10.1016/0040-6090(89)90090-4openalex-snapshot
Electrical characteristics of Ti-Si(100) interfaces
inferred← citeshttps://doi.org/10.1016/0042-207x(88)90081-4openalex-snapshot
An investigation of metal contacts to II–VI compounds: CdTe and CdS
inferred← citeshttps://doi.org/10.1016/0042-207x(90)93788-kopenalex-snapshot
Ag on p-WSe2(0001) surfaces: approaching the Schottky limit?
inferred← citeshttps://doi.org/10.1016/0079-6727(90)90001-eopenalex-snapshot
Fabrication and optical properties of semiconductor quantum wells and superlattices
inferred← citeshttps://doi.org/10.1016/0079-6727(93)90005-topenalex-snapshot
Semiconductor superlattices and quantum wells for infrared optoelectronics
inferred← citeshttps://doi.org/10.1016/0079-6816(90)90017-eopenalex-snapshot
Connections between work functions, Schottky barriers, and heterojunction band offsets
inferred← citeshttps://doi.org/10.1016/0167-5729(93)90015-hopenalex-snapshot
Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy
inferred← citeshttps://doi.org/10.1016/0167-5729(95)00008-9openalex-snapshot
Heterojunction band offset engineering
inferred← citeshttps://doi.org/10.1016/0169-4332(89)90026-3openalex-snapshot
From synchrotron radiation to I-V measurements of GaAs schottky barrier formation
inferred← citeshttps://doi.org/10.1016/0169-4332(89)90046-9openalex-snapshot
From heterojunction interfaces to metal-semiconductor interfaces
inferred← citeshttps://doi.org/10.1016/0169-4332(89)90087-1openalex-snapshot
Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors
inferred← citeshttps://doi.org/10.1016/0169-4332(92)90240-xopenalex-snapshot
The interaction of platinum with GaP(110): band bending and surface photovoltage effects
inferred← citeshttps://doi.org/10.1016/0169-4332(92)90246-topenalex-snapshot
Non-equilibrium effects in photoemission from metal-semiconductor interfaces
inferred← citeshttps://doi.org/10.1016/0169-4332(92)90311-kopenalex-snapshot
Probing heterojunctions by ballistic electron emission microscopy
inferred← citeshttps://doi.org/10.1016/0169-4332(92)90327-topenalex-snapshot
Understanding and controlling semiconductor interfaces: spectroscopy and spectromicroscopy
inferred← citeshttps://doi.org/10.1016/0169-4332(92)90329-vopenalex-snapshot
Internally detected electron photoexcitation spectroscopy on heterostructures
inferred← citeshttps://doi.org/10.1016/0169-4332(92)90503-popenalex-snapshot
Interface states at lattice-matched and pseudomorphic heterostructures
inferred← citeshttps://doi.org/10.1016/0169-4332(93)90730-yopenalex-snapshot
Atomic nitrogen on InAs(110) surfaces at room temperature
inferred← citeshttps://doi.org/10.1016/0368-2048(94)02116-3openalex-snapshot
Prediction and observation of II–VI/CuInSe2 heterojunction band offsets
inferred← citeshttps://doi.org/10.1016/0368-2048(94)02297-6openalex-snapshot
Sensitivity analysis of dipole layers at semiconductor interfaces
inferred← citeshttps://doi.org/10.1016/0378-4363(85)90386-9openalex-snapshot
On a direct connection of the transition metal impurity levels to the band edge discontinuities in semiconductor heterojunctions
inferred← citeshttps://doi.org/10.1016/0379-6787(87)90099-8openalex-snapshot
Criteria for the design of high efficiency thin film solar cells: Theory and practice
inferred← citeshttps://doi.org/10.1016/0749-6036(86)90080-7openalex-snapshot
· Models to study strained-layer quantum-well structures and superlattices
inferred← citeshttps://doi.org/10.1016/0749-6036(86)90083-2openalex-snapshot
Experimental tests of the dielectric electronegativity approach to the problem of heterojunction band discontinuities
inferred← citeshttps://doi.org/10.1016/0749-6036(87)90051-6openalex-snapshot
Light scattering determination of band offsets in and quantum wells: A comparative study
inferred← citeshttps://doi.org/10.1016/0749-6036(87)90204-7openalex-snapshot
Characterization of semiconductor interfaces with synchrotron radiation
inferred← citeshttps://doi.org/10.1016/0749-6036(88)90240-6openalex-snapshot
An effective potential approach for extended density of states in heterostructures
inferred← citeshttps://doi.org/10.1016/0749-6036(89)90311-xopenalex-snapshot
Theories of electronic structure in semiconductor heterostructures
inferred← citeshttps://doi.org/10.1016/0749-6036(89)90392-3openalex-snapshot
Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells
inferred← citeshttps://doi.org/10.1016/0921-4526(93)90175-6openalex-snapshot
Band offsets: the charge transfer effect
inferred← citeshttps://doi.org/10.1016/0921-5107(92)90307-uopenalex-snapshot
Microscopic theory of heterojunction band offsets
inferred← citeshttps://doi.org/10.1016/b978-0-08-099929-6.00008-7openalex-snapshot
Barriers at Interfaces of High-Mobility and Compound Semiconductors
inferred← citeshttps://doi.org/10.1016/b978-0-08-099929-6.00009-9openalex-snapshot
Electron Energy Barriers Between Conducting Materials and Insulating Oxides
inferred← citeshttps://doi.org/10.1016/b978-0-12-409547-2.13819-3openalex-snapshot
Stability and Corrosion of Semiconductors in Photoelectrochemical Solar Cells
inferred← citeshttps://doi.org/10.1016/b978-0-323-96027-4.10003-8openalex-snapshot
Atomic structures and electronic properties of semiconductor interfaces
inferred← citeshttps://doi.org/10.1016/b978-0-44-453153-7.00052-3openalex-snapshot
Atomic Structures and Electronic Properties of Semiconductor Interfaces
inferred← citeshttps://doi.org/10.1016/b978-0-444-42782-3.50009-1openalex-snapshot
Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces
inferred← citeshttps://doi.org/10.1016/b978-0-444-53099-8.00002-6openalex-snapshot
Ab initio studies of structural and electronic properties
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