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Theoretical study of stacking faults in silicon

https://doi.org/10.1103/physrevb.32.7979
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssb.2220710232openalex-snapshot
Semi‐Empirical Calculations for Stacking Faults in Diamond‐Type Lattices
inferredcites →https://doi.org/10.1002/pssb.2221080113openalex-snapshot
Energy Levels of Intrinsic and Extrinsic Stacking Faults in Silicon
inferredcites →https://doi.org/10.1063/1.1678599openalex-snapshot
Hellmann-Feynman and Virial Theorems in the X α Method
inferredcites →https://doi.org/10.1063/1.1721449openalex-snapshot
Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused Silica
inferredcites →https://doi.org/10.1063/1.1729323openalex-snapshot
Elastic Moduli of Germanium Versus Hydrostatic Pressure at 25.0°C and −195.8°C
inferredcites →https://doi.org/10.1063/1.89355openalex-snapshot
The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski silicon
inferredcites →https://doi.org/10.1080/01418617908234855openalex-snapshot
Direct TEM determination of intrinsic and extrinsic stacking fault energies of silicon
inferredcites →https://doi.org/10.1080/01418617908239275openalex-snapshot
Lattice imaging of faulted dipoles in silicon
inferredcites →https://doi.org/10.1080/14786437008220953openalex-snapshot
The observation of dissociated dislocations in silicon
inferredcites →https://doi.org/10.1080/14786437408213549openalex-snapshot
Pseudopotential calculation of the stacking fault energy in silicon
inferredcites →https://doi.org/10.1080/14786437508229289openalex-snapshot
Dissociation of near-screw dislocations in germanium and silicon
inferredcites →https://doi.org/10.1080/14786437608221106openalex-snapshot
On pseudopotential calculations of stacking-fault energies in silicon
inferredcites →https://doi.org/10.1088/0022-3719/12/21/009openalex-snapshot
Momentum-space formalism for the total energy of solids
inferredcites →https://doi.org/10.1088/0022-3719/13/16/516openalex-snapshot
Momentum-space formalism for the total energy of solids
inferredcites →https://doi.org/10.1088/0022-3719/15/27/014openalex-snapshot
A valence force field for the silicon crystal
inferredcites →https://doi.org/10.1088/0031-8949/1982/t1/001openalex-snapshot
Pseudopotentials and Total Energy Calculations
inferredcites →https://doi.org/10.1098/rspa.1971.0184openalex-snapshot
The dissociation of dislocations in silicon
inferredcites →https://doi.org/10.1103/physrev.136.b864openalex-snapshot
Inhomogeneous Electron Gas
inferredcites →https://doi.org/10.1103/physrev.140.a1133openalex-snapshot
Self-Consistent Equations Including Exchange and Correlation Effects
inferredcites →https://doi.org/10.1103/physrev.56.340openalex-snapshot
Forces in Molecules
inferredcites →https://doi.org/10.1103/physrevb.10.5095openalex-snapshot
Electronic structure of silicon
inferredcites →https://doi.org/10.1103/physrevb.19.2074openalex-snapshot
(110) surface atomic structures of covalent and ionic semiconductors
inferredcites →https://doi.org/10.1103/physrevb.23.5048openalex-snapshot
Self-interaction correction to density-functional approximations for many-electron systems
inferredcites →https://doi.org/10.1103/physrevb.23.5384openalex-snapshot
Electronic stacking-fault states in silicon
inferredcites →https://doi.org/10.1103/physrevb.24.1006openalex-snapshot
Generalized Wannier functions at interfaces: Stacking faults in silicon
inferredcites →https://doi.org/10.1103/physrevb.26.3259openalex-snapshot
Theory of lattice-dynamical properties of solids: Application to Si and Ge
inferredcites →https://doi.org/10.1103/physrevlett.43.1494openalex-snapshot
Norm-Conserving Pseudopotentials
inferredcites →https://doi.org/10.1103/physrevlett.45.566openalex-snapshot
Ground State of the Electron Gas by a Stochastic Method
inferredcites →https://doi.org/10.1111/j.1365-2818.1973.tb03822.xopenalex-snapshot
Transmission electron microscope observations of extended and unextended dislocation nodes in Si and Ge/Si layers using the weak‐beam technique

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Density functional calculations for stacking faults and grain boundaries in silicon
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Silicon (Si) lattice parameters
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Silicon (Si) Young’s modulus, torsion modulus, bulk modulus (various structures)
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Reconstruction Elements
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Dislocations in Semiconductors
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Atomistic modeling of the dissociation of a screw dislocation in silicon
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On energy differences between structurally different crystals
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A theoretical study of the electronic structure for twin stacking faults in silicon
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Twinning superlattices
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Order-N study of the structure and energetics of stacking faults in silicon
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Long-range Tersoff potential for silicon to reproduce 30° partial dislocation migration
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Deformation behavior of Mo5SiB2
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Electronic structures and optical properties induced by silicon twin boundaries: The first-principle calculation
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Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells
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Transmission electron microscopy study on the laser-cutting induced microdefects in silicon heterojunction solar cells
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Interfacial modification and adhesion improvement of MoC and WC nanolayers by ion irradiation
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Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates
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Characterization of misfit dislocations in Si quantum well structures enabled by STEM based aberration correction
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Multiband envelope function model of twinning boundaries and superlattices: electronic structure and infrared optical properties
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Origin of homoepitaxial faulted island growth on the Si(111) surface
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Site-specific binding energy terms on Si(111)-7×7 surface
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Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon
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Atomic resolution EELS analysis of a misfit dislocation at a GeSi/Si interface
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Size effects on intersubband absorption in p-doped twinning superlattices
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Experimental Evidence for a New Two-Dimensional Honeycomb Phase of Silicon: A Missing Link in the Chemistry and Physics of Silicon Surfaces?
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Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions
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Size-Dependent Fault-Driven Relaxation and Faceting in Zincblende CdSe Colloidal Quantum Dots
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Silicon Nanowire Polytypes: Identification by Raman Spectroscopy, Generation Mechanism, and Misfit Strain in Homostructures
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In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon
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Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure
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Stacking fault induced relative dipole at type A/B NiSi2/Si (111) interfaces and its correlation to the Si (111) 7×7 subunit cell structures
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Energetics and effects of planar defects in CdTe
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First-principle calculation of stacking fault energies in Ni and Ni-Co alloy
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Dielectric response of strained and relaxed Si1−x−yGexCy alloys grown by molecular beam epitaxy on Si(001)
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Topological states ruled by stacking faults in Bi2Se3 and Bi2Te3
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Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy
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Theoretical investigation of (111) stacking faults in aluminium
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Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors
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Stacking-fault energies in semiconductors from first-principles calculations
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Predicting the structure and energy of a grain boundary in germanium
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Theoretical study of planar defects in silicon carbide
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Calculated properties of a {113} planar vacancy aggregate in Si
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The nature of interplanar interactions in SiC polytypes
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Stacking fault and four-body interaction in the Si(111)7×7 structure
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First-principles study of the structural properties of Ge
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Abinitiopseudopotential study of structural and high-pressure properties of SiC
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X-ray diffraction study of the Ge(111)5×5-Sn and Ge(111)7×7-Sn surfaces
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Adatoms on Si(111) and Ge(111) surfaces
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Electron transmission through silicon stacking faults
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Electronic and structural properties of CaSi2
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Ab initiocalculation of stacking-fault energies in noble metals
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Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors
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Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces
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Electronic structure of (Zn,Cd)(S,Se)-based polytype superlattices
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Optical properties of twinning superlattices in diamond-type and zinc-blende-type semiconductors
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Direct optical transitions in indirect semiconductors: The case of Ge twinning superlattices
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Scanning-tunneling-microscopy study of Pb on Si(111)
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Shallow electron states of bounded intrinsic stacking faults in silicon
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Energy of Si(111) dimer-stacking-fault structures
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Point defect interactions with extended defects in semiconductors
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Structural and electronic characterization of a dissociated 60° dislocation in GeSi
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Localized electronic states around stacking faults in silicon carbide
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Stacking fault effects in Mg-doped GaN
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Stacking faults in 3 C − , 4 H − , and 6 H − SiC polytypes investigated by an ab initio supercell method
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Theoretical investigation of extended defects and their interactions with vacancies in SixGe1−x
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Ab initiostudy of structural and electronic properties of planar defects in Si and SiC
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Atomistic Origin of Deformation Twinning in Biomineral Aragonite
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Abinitiodetermination of the structure of a grain boundary by simulated quenching
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Absence of large compressive stress on Si(111)
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Mechanical stability and charge densities near stacking faults
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Atomic and Electronic Structure of a Dissociated 60° Misfit Dislocation in GexSi(1−x)
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Opposing effects of stacking faults and antisite domain boundaries on the conduction band edge in kesterite quaternary semiconductors
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First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes
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Electronic Properties of Silicon with Intrinsic Stacking Fault
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1320 nm Light Source From Deuterium Treated Silicon
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Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities
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X-ray Diffraction Study of Deformational Evolution of Stacking Faults in Nanocrystalline Metals
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Stacking Fault Duplication in 6H-SiC Single Crystal
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The calculation of stacking fault energies in close-packed metals
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The Origin of Polytypes in SiC and ZnS
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Point Defect Interactions with Extended Defects in Silicon
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GaAs nanowires : crystal phase engineering and application for water photoelectrolysis
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