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Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0022-3093(83)90606-3openalex-snapshot
Optically induced excess conductivity in compensated a-Si:H films
inferredcites →https://doi.org/10.1016/0022-3093(89)90661-3openalex-snapshot
Defect relaxation in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1016/0022-3093(89)90674-1openalex-snapshot
Light-induced conductivity changes in phosphorus-doped hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1016/0038-1098(80)91204-1openalex-snapshot
Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures
inferredcites →https://doi.org/10.1016/0379-6787(83)90076-5openalex-snapshot
Properties of the defect causing solar cell degradation
inferredcites →https://doi.org/10.1016/0379-6787(83)90082-0openalex-snapshot
Origin of the photo-induced changes in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1039/tf9706600080openalex-snapshot
Non-symmetrical dielectric relaxation behaviour arising from a simple empirical decay function
inferredcites →https://doi.org/10.1063/1.100790openalex-snapshot
Reinterpretation of degradation kinetics of amorphous silicon
inferredcites →https://doi.org/10.1063/1.101959openalex-snapshot
Ionization entropy and charge-state-controlled metastable defects in semiconductors
inferredcites →https://doi.org/10.1063/1.101965openalex-snapshot
Saturation of the light-induced defect density in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.328084openalex-snapshot
Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.332570openalex-snapshot
Temperature dependent light induced conductivity changes in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.339431openalex-snapshot
An explanation of optically induced excess conductivity in compensated a-Si:H films
inferredcites →https://doi.org/10.1063/1.339569openalex-snapshot
Degradation and annealing characteristics of amorphous silicon-hydrogen alloys after a long-time test
inferredcites →https://doi.org/10.1063/1.341966openalex-snapshot
The annealing behavior of light-induced defects in a-Si:H
inferredcites →https://doi.org/10.1063/1.89674openalex-snapshot
Reversible conductivity changes in discharge-produced amorphous Si
inferredcites →https://doi.org/10.1063/1.90739openalex-snapshot
Deep exponential distribution of traps in naphthalene
inferredcites →https://doi.org/10.1063/1.92052openalex-snapshot
Light-induced radiative recombination centers in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.92402openalex-snapshot
Light-induced dangling bonds in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.92865openalex-snapshot
Stability of n-i-p amorphous silicon solar cells
inferredcites →https://doi.org/10.1063/1.93139openalex-snapshot
Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.94708openalex-snapshot
Role of carbon in hydrogenated amorphous silicon solar cell degradation
inferredcites →https://doi.org/10.1063/1.95001openalex-snapshot
Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys
inferredcites →https://doi.org/10.1063/1.95020openalex-snapshot
Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.96010openalex-snapshot
Analysis of light and current induced effects in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.97022openalex-snapshot
Light-induced metastable defects in amorphous silicon: The role of hydrogen
inferredcites →https://doi.org/10.1063/1.97656openalex-snapshot
Instability mechanism in hydrogenated amorphous silicon thin-film transistors
inferredcites →https://doi.org/10.1063/1.98406openalex-snapshot
Equilibrium temperature and related defects in intrinsic glow discharge amorphous silicon
inferredcites →https://doi.org/10.1063/1.98528openalex-snapshot
Increase of doping efficiency by light soaking in boron-doped hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1063/1.99130openalex-snapshot
Light-induced degradation at the silicon/silicon dioxide interface
inferredcites →https://doi.org/10.1080/13642817908246356openalex-snapshot
Photo-induced changes in glow-discharge-deposited amorphous silicon: The Staebler-Wronski effect
inferredcites →https://doi.org/10.1080/13642818708211224openalex-snapshot
Weak bond-dangling bond conversion in amorphous silicon
inferredcites →https://doi.org/10.1080/13642818708221319openalex-snapshot
Hydrogen diffusion in amorphous silicon
inferredcites →https://doi.org/10.1080/13642818908205926openalex-snapshot
The defect density in amorphous silicon
inferredcites →https://doi.org/10.1080/13642819008205524openalex-snapshot
Defect creation in the accumulation layer of a-Si: H thin-film transistors
inferredcites →https://doi.org/10.1088/0022-3719/19/28/016openalex-snapshot
A phenomenological model for the Meyer-Neldel rule
inferredcites →https://doi.org/10.1103/physrevb.24.7457openalex-snapshot
Deep electron traps in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1103/physrevb.31.100openalex-snapshot
Kinetics of the metastable optically induced ESR ina-Si:H
inferredcites →https://doi.org/10.1103/physrevb.31.7979openalex-snapshot
Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs
inferredcites →https://doi.org/10.1103/physrevb.32.23openalex-snapshot
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
inferredcites →https://doi.org/10.1103/physrevb.34.2475openalex-snapshot
Photoconductivity and light-induced change ina-Si:H
inferredcites →https://doi.org/10.1103/physrevb.36.2645openalex-snapshot
Metastable defects in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1103/physrevb.36.6217openalex-snapshot
Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
inferredcites →https://doi.org/10.1103/physrevb.36.6479openalex-snapshot
Doping and annealing effects on persistent photoconductivity in doping-modulated amorphous-silicon superlattices
inferredcites →https://doi.org/10.1103/physrevb.36.9378openalex-snapshot
Light-induced perturbation of the high-temperature equilibrium in phosphorus-doped a -Si: H
inferredcites →https://doi.org/10.1103/physrevb.37.1020openalex-snapshot
Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1103/physrevb.38.3595openalex-snapshot
Connection between the Meyer-Neldel relation and multiple-trapping transport
inferredcites →https://doi.org/10.1103/physrevb.38.7474openalex-snapshot
Charge-trapping model of metastability in doped hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1103/physrevb.39.1134openalex-snapshot
Energy levels and charge distributions of nonideal dangling and floating bonds in amorphous Si
inferredcites →https://doi.org/10.1103/physrevb.39.1766openalex-snapshot
Hole trapping, light soaking, and secondary photocurrent transients in amorphous silicon
inferredcites →https://doi.org/10.1103/physrevb.39.5107openalex-snapshot
Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energies
inferredcites →https://doi.org/10.1103/physrevb.40.88openalex-snapshot
Excitation-energy dependence of optically induced ESR ina-Si:H
inferredcites →https://doi.org/10.1103/physrevb.42.7420openalex-snapshot
Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects
inferredcites →https://doi.org/10.1103/physrevlett.48.421openalex-snapshot
Observation of a Reversible Field-Induced Doping Effect in Hydrogenated Amorphous Silicon
inferredcites →https://doi.org/10.1103/physrevlett.56.2215openalex-snapshot
Metastable Defects in Amorphous-Silicon Thin-Film Transistors
inferredcites →https://doi.org/10.1103/physrevlett.57.467openalex-snapshot
Structure and Electronic States in Disordered Systems
inferredcites →https://doi.org/10.1103/physrevlett.59.1037openalex-snapshot
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
inferredcites →https://doi.org/10.1103/physrevlett.64.3062openalex-snapshot
Experimental evidence for zero-correlation-energy deep defects in intrinsic hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1143/jjap.25.l654openalex-snapshot
Light-Induced Effects and Their Annealing Behavior in a-Si:H
inferredcites →https://doi.org/10.1143/jjap.28.586openalex-snapshot
Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPM
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inferred← citeshttps://doi.org/10.1063/1.3094916openalex-snapshot
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses
inferred← citeshttps://doi.org/10.1063/1.3213339openalex-snapshot
Creation and relaxation of light- and bias-induced metastabilities in Cu(In,Ga)Se2
inferred← citeshttps://doi.org/10.1063/1.3238559openalex-snapshot
Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework
inferred← citeshttps://doi.org/10.1063/1.3275807openalex-snapshot
Proton migration mechanism for the instability of organic field-effect transistors
inferred← citeshttps://doi.org/10.1063/1.3304167openalex-snapshot
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
inferred← citeshttps://doi.org/10.1063/1.353019openalex-snapshot
The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics
inferred← citeshttps://doi.org/10.1063/1.353167openalex-snapshot
Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature
inferred← citeshttps://doi.org/10.1063/1.357483openalex-snapshot
Photothermal deflection and photoluminescence studies of CdS and CdSe quantum dots
inferred← citeshttps://doi.org/10.1063/1.359521openalex-snapshot
Electron emission from deep states and evaluation of the density of states in a-Si:H
inferred← citeshttps://doi.org/10.1063/1.360904openalex-snapshot
Continuous decay of drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking investigated by the photomixing technique
inferred← citeshttps://doi.org/10.1063/1.3634066openalex-snapshot
Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors
inferred← citeshttps://doi.org/10.1063/1.368787openalex-snapshot
Photoconductivity in self-organized InAs quantum dots
inferred← citeshttps://doi.org/10.1063/1.371836openalex-snapshot
Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors
inferred← citeshttps://doi.org/10.1063/1.4879554openalex-snapshot
Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors
inferred← citeshttps://doi.org/10.1063/1.4914038openalex-snapshot
Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
inferred← citeshttps://doi.org/10.1063/1.4917209openalex-snapshot
Modeling of stretched-exponential and stretched-hyperbola time dependence of threshold voltage shift in thin-film transistors
inferred← citeshttps://doi.org/10.1063/1.4935077openalex-snapshot
Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations
inferred← citeshttps://doi.org/10.1063/1.4941298openalex-snapshot
In situ photoluminescence study of plasma-induced damage at the a-Si:H/c-Si interface
inferred← citeshttps://doi.org/10.1063/5.0174213openalex-snapshot
Enthalpy-entropy compensation in the slow Arrhenius process
inferred← citeshttps://doi.org/10.1080/00018739500101576openalex-snapshot
Photoinduced effects and metastability in amorphous semiconductors and insulators
inferred← citeshttps://doi.org/10.1080/01418639408240268openalex-snapshot
Collective phonon interaction and annealing of metastable defects in amorphous semiconductors
inferred← citeshttps://doi.org/10.1080/014186398259167openalex-snapshot
Metastable hydrogen atom trapping in hydrogenated amorphous silicon films: A microscopic model for metastable defect creation
inferred← citeshttps://doi.org/10.1080/13642810008209764openalex-snapshot
Time evolution of the density of states of tritiated hydrogenated amorphous silicon
inferred← citeshttps://doi.org/10.1080/13642810108225456openalex-snapshot
Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide
inferred← citeshttps://doi.org/10.1080/14786430802186940openalex-snapshot
Pre-exponential factor for non-isothermal crystallization of glassy Se85−xTe15Sbx(0≤x≤10) alloys
inferred← citeshttps://doi.org/10.1080/14786430902755032openalex-snapshot
Observation of inverse Meyer–Neldel rule in thermally activated crystallization of a hybrid composite of phenol formaldehyde
inferred← citeshttps://doi.org/10.1080/15421406.2010.537869openalex-snapshot
Does the Temperature Dependence of the Charge Carrier Mobility in Disordered Organic Semiconductors at Large Carrier Concentrations Obey the Meyer–Neldel Compensation Law?
inferred← citeshttps://doi.org/10.1088/0022-3727/38/21/018openalex-snapshot
Investigation of compensation effect for isothermal crystallization in glassy Se80−xTe20Mx(M = Cd, Ge, Sb) alloys
inferred← citeshttps://doi.org/10.1088/0031-8949/74/5/017openalex-snapshot
Observation of compensation effect for isothermal crystallization in glassy Se80−xGe20Inxand Se78−xGe22Bixalloys
inferred← citeshttps://doi.org/10.1088/0034-4885/69/4/r04openalex-snapshot
Multi-excitation entropy: its role in thermodynamics and kinetics
inferred← citeshttps://doi.org/10.1088/0256-307x/25/11/066openalex-snapshot
Thermally Activated Photoconduction and Alternating-Current Conduction in Se75Ge20Ag5Chalcogenide Glass: Investigation of Meyer–Neldel Rule
inferred← citeshttps://doi.org/10.1088/0268-1242/14/5/006openalex-snapshot
Effects of alloy potential fluctuations in InGaN epitaxial films
inferred← citeshttps://doi.org/10.1088/0953-8984/22/4/045901openalex-snapshot
Formation of color centers in a soda-lime silicate glass by excimer laser irradiation
inferred← citeshttps://doi.org/10.1088/0953-8984/7/23/021openalex-snapshot
The long-term relaxation and build-up transient of photoconductivity in Si 1-x Ge x /Si quantum wells
inferred← citeshttps://doi.org/10.1088/1402-4896/ad9645openalex-snapshot
Kinetic modeling and iso-conversional analysis of glass-ceramics of selenium doped with carbon nanomaterials
inferred← citeshttps://doi.org/10.1088/1742-6596/559/1/012017openalex-snapshot
Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation
inferred← citeshttps://doi.org/10.1103/physrevb.44.12748openalex-snapshot
Kinetics of optically generated defects in hydrogenated amorphous silicon
inferred← citeshttps://doi.org/10.1103/physrevb.44.13775openalex-snapshot
Connection between the Meyer-Neldel rule and stretched-exponential relaxation
inferred← citeshttps://doi.org/10.1103/physrevb.45.3332openalex-snapshot
Molecular-dynamics simulations of defect formation in hydrogenated amorphous silicon
inferred← citeshttps://doi.org/10.1103/physrevb.45.4160openalex-snapshot
Defect pool in amorphous-silicon thin-film transistors
inferred← citeshttps://doi.org/10.1103/physrevb.45.4512openalex-snapshot
Defect equilibration and stabilization in low-spin-densitya-Si:H
inferred← citeshttps://doi.org/10.1103/physrevb.46.12244openalex-snapshot
Origin and consequences of the compensation (Meyer-Neldel) law
inferred← citeshttps://doi.org/10.1103/physrevb.46.9482openalex-snapshot
Transient photocharge measurements and electron emission from deep levels in undopeda-Si:H
inferred← citeshttps://doi.org/10.1103/physrevb.48.10815openalex-snapshot
Improved defect-pool model for charged defects in amorphous silicon
inferred← citeshttps://doi.org/10.1103/physrevb.48.17114openalex-snapshot
Evidence for the hydrogen-glass model of metastability annealing in phosphorus-doped amorphous silicon
inferred← citeshttps://doi.org/10.1103/physrevb.49.11173openalex-snapshot
Optical properties of ordered and randomly disordered AlAs/GaAs short-period superlattices
inferred← citeshttps://doi.org/10.1103/physrevb.50.11592openalex-snapshot
Pulsed-light soaking of hydrogenated amorphous silicon
inferred← citeshttps://doi.org/10.1103/physrevb.51.2173openalex-snapshot
Observation of slow dangling-bond relaxation inp-type hydrogenated amorphous silicon
inferred← citeshttps://doi.org/10.1103/physrevb.51.5538openalex-snapshot
Model for photoinduced anisotropy and its dark relaxation in chalcogenide glasses
inferred← citeshttps://doi.org/10.1103/physrevb.58.12625openalex-snapshot
Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors
inferred← citeshttps://doi.org/10.1103/physrevb.64.195201openalex-snapshot
Microstructure of local defects in amorphous Si:H: A quantum chemical study
inferred← citeshttps://doi.org/10.1103/physrevb.65.077202openalex-snapshot
Reply to “Comment on ‘Origin and consequences of the compensation (Meyer-Neldel) law’ ”
inferred← citeshttps://doi.org/10.1103/physrevb.66.195210openalex-snapshot
Meyer-Neldel rule in charge-trapping metastability inp-type hydrogenated amorphous silicon
inferred← citeshttps://doi.org/10.1103/physrevb.80.115411openalex-snapshot
Kinetics and relaxation of electroresistance in transition metal oxides: Model for resistive switching
inferred← citeshttps://doi.org/10.1103/physrevb.81.045202openalex-snapshot
Temperature dependence of the charge carrier mobility in disordered organic semiconductors at large carrier concentrations
inferred← citeshttps://doi.org/10.1103/physrevb.82.075322openalex-snapshot
Proton migration mechanism for operational instabilities in organic field-effect transistors
inferred← citeshttps://doi.org/10.1103/physrevb.91.054108openalex-snapshot
Slow relaxation of cascade-induced defects in Fe
inferred← citeshttps://doi.org/10.1103/physrevlett.101.265501openalex-snapshot
Microscopic Description of Light Induced Defects in Amorphous Silicon Solar Cells
inferred← citeshttps://doi.org/10.1103/physrevlett.67.2347openalex-snapshot
Fast metastable defect-creation in amorphous silicon by femtosecond light pulses
inferred← citeshttps://doi.org/10.1103/physrevlett.78.1102openalex-snapshot
Evidence for the Improved Defect-Pool Model for Gap States in Amorphous Silicon from Charge DLTS Experiments on Undoped a -Si:H
inferred← citeshttps://doi.org/10.1103/physrevlett.79.4210openalex-snapshot
Photodilatation Effect of Undoped a -Si:H Films
inferred← citeshttps://doi.org/10.1103/physrevlett.88.205502openalex-snapshot
Metastability of Amorphous Silicon from Silicon Network Rebonding
inferred← citeshttps://doi.org/10.1109/ccece.1997.608315openalex-snapshot
Analog circuit design using amorphous silicon thin film transistors
inferred← citeshttps://doi.org/10.1109/drc.2012.6257025openalex-snapshot
Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate field
inferred← citeshttps://doi.org/10.1109/irps.2011.5784463openalex-snapshot
A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests
inferred← citeshttps://doi.org/10.1109/jphotov.2016.2633800openalex-snapshot
Light-Induced Effects on the a-Si:H/c-Si Heterointerface
inferred← citeshttps://doi.org/10.1109/led.2010.2040799openalex-snapshot
Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories
inferred← citeshttps://doi.org/10.1109/nvmt.2009.5429779openalex-snapshot
Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device
inferred← citeshttps://doi.org/10.1109/pvsc.2013.6744456openalex-snapshot
Modeling A-Si module ageing using the concept of environmental dose
inferred← citeshttps://doi.org/10.1109/pvsc.2014.6925176openalex-snapshot
Changes in the serial resistance Of a- Si, a-/μc-Si and mono-crystalline PV modules during the year
inferred← citeshttps://doi.org/10.1109/pvsc.2017.8366231openalex-snapshot
Notice of Removal Light-induced effects on the a-Si:H/c-Si heterointerface
inferred← citeshttps://doi.org/10.1109/relphy.2005.1493080openalex-snapshot
The kinetics of degradation of data retention of post-cycled nrom non-volatile memory products
inferred← citeshttps://doi.org/10.1109/tdmr.2016.2526498openalex-snapshot
Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part I: Two-Stage Model for Lifetime Prediction
inferred← citeshttps://doi.org/10.1109/ted.2009.2016398openalex-snapshot
Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling
inferred← citeshttps://doi.org/10.1116/1.2244535openalex-snapshot
Amorphous silicon layer characteristics during 70–2000eV Ar+-ion bombardment of Si(100)
inferred← citeshttps://doi.org/10.1116/1.3305812openalex-snapshot
Amorphization of Si(100) by Ar+-ion bombardment studied with spectroscopic and time-resolved second-harmonic generation
inferred← citeshttps://doi.org/10.1116/1.4972235openalex-snapshot
Effect of illumination and electric field intensity on the efficiency improvement of amorphous silicon tandem solar cells
inferred← citeshttps://doi.org/10.1134/1.1187129openalex-snapshot
Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H
inferred← citeshttps://doi.org/10.1134/1.1187307openalex-snapshot
Light-induced processes in a-Si:H films at elevated temperatures
inferred← citeshttps://doi.org/10.1134/1.1187545openalex-snapshot
Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures
inferred← citeshttps://doi.org/10.1134/1.1825114openalex-snapshot
The Meyer-Neldel rule in the processes of thermal emission and hole capture in Ge/Si quantum dots
inferred← citeshttps://doi.org/10.1134/s1063782614080053openalex-snapshot
On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots
inferred← citeshttps://doi.org/10.1134/s1087659608010069openalex-snapshot
Investigation of the Meyer-Neldel rule for AC conduction in glassy Se100 − x Te x alloys
inferred← citeshttps://doi.org/10.1134/s1087659609030092openalex-snapshot
Comments on the validity of Meyer-Neldel rule for AC conduction in glassy alloys
inferred← citeshttps://doi.org/10.1143/jjap.37.1736openalex-snapshot
A Critical Assessment of Different Models of the Metastability in a-Si:H
inferred← citeshttps://doi.org/10.1155/2013/365475openalex-snapshot
Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application
inferred← citeshttps://doi.org/10.1166/mex.2012.1073openalex-snapshot
Photovoltaic Properties of a-Si:H Films Grown by Plasma Enhanced Chemical Vapor Deposition: A Review
inferred← citeshttps://doi.org/10.1557/jmr.2012.193openalex-snapshot
The Meyer–Neldel rule in amorphous TiO2 films with different Fe content
inferred← citeshttps://doi.org/10.1557/opl.2011.1127openalex-snapshot
Energy landscape models for conduction and drift in phase change memory
inferred← citeshttps://doi.org/10.1557/opl.2011.1229openalex-snapshot
Electron emission from deep traps in hydrogenated amorphous silicon and silicon-germanium: Meyer-Neldel behavior and ionization entropy
inferred← citeshttps://doi.org/10.1557/proc-1250-g05-03openalex-snapshot
Size-dependent Temperature Instability in NiO–based Resistive Switching Memory
inferred← citeshttps://doi.org/10.1557/proc-1251-h05-01openalex-snapshot
Understanding Phase Change Memory Reliability and Scaling by Physical Models of the Amorphous Chalcogenide Phase
inferred← citeshttps://doi.org/10.1557/proc-219-493openalex-snapshot
Fast Changes in a-Si:H Solar Cells After Severe Light-Soaking
inferred← citeshttps://doi.org/10.1557/proc-219-57openalex-snapshot
Defect Equilibration and Metastability in Low-Spin-Density a-Si:H
inferred← citeshttps://doi.org/10.1557/proc-258-325openalex-snapshot
Defect Equilibration and Stabilization in Two Types of Low-Spin-Density a-Si:H
inferred← citeshttps://doi.org/10.1557/proc-284-383openalex-snapshot
Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures
inferred← citeshttps://doi.org/10.1557/proc-297-619openalex-snapshot
“Fast” and “Slow” Metastable Defects in a-Si:H
inferred← citeshttps://doi.org/10.1557/proc-297-649openalex-snapshot
Thermal Annealing Recovery and Saturation of Light-Induced Degradation of Amorphous Silicon Alloy Solar Cells with Different Microvoid Density
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