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Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers

https://doi.org/10.1103/physrevb.68.195201

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/s11664-000-0088-2openalex-snapshot

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

inferredcites →https://doi.org/10.1016/0038-1098(71)90112-8openalex-snapshot

Donor-acceptor pair recombination in GaN

inferredcites →https://doi.org/10.1016/s0022-0248(01)01456-7openalex-snapshot

Structural and optical properties of thick freestanding GaN templates

inferredcites →https://doi.org/10.1016/s0022-0248(02)01755-4openalex-snapshot

Donors in hydride-vapor-phase epitaxial GaN

inferredcites →https://doi.org/10.1016/s0022-0248(98)00198-5openalex-snapshot

Investigations of undoped and Mg-doped wurtzite GaN with luminescence-detected paramagnetic resonance in the 4 mm band

inferredcites →https://doi.org/10.1016/s0038-1101(01)00088-0openalex-snapshot

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

inferredcites →https://doi.org/10.1016/s0921-4526(99)00402-0openalex-snapshot

Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

inferredcites →https://doi.org/10.1063/1.113293openalex-snapshot

CCl 4 doping of GaN grown by metalorganic molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.117934openalex-snapshot

Amphoteric properties of substitutional carbon impurity in GaN and AlN

inferredcites →https://doi.org/10.1063/1.122123openalex-snapshot

Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

inferredcites →https://doi.org/10.1063/1.125523openalex-snapshot

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

inferredcites →https://doi.org/10.1063/1.1330563openalex-snapshot

Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration

inferredcites →https://doi.org/10.1063/1.1411985openalex-snapshot

Identification of Si and O donors in hydride-vapor-phase epitaxial GaN

inferredcites →https://doi.org/10.1063/1.1418452openalex-snapshot

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

inferredcites →https://doi.org/10.1063/1.1662930openalex-snapshot

Luminescence of Be- and Mg-doped GaN

inferredcites →https://doi.org/10.1063/1.355769openalex-snapshot

Photoluminescence of Al x Ga1− x As alloys

inferredcites →https://doi.org/10.1063/1.369619openalex-snapshot

Chemical trends for acceptor impurities in GaN

inferredcites →https://doi.org/10.1103/physrevb.4.1211openalex-snapshot

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

inferredcites →https://doi.org/10.1103/physrevb.48.17878openalex-snapshot

Electron-spin-resonance studies of donors in wurtzite GaN

inferredcites →https://doi.org/10.1103/physrevb.51.13326openalex-snapshot

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

inferredcites →https://doi.org/10.1103/physrevb.58.3879openalex-snapshot

Acceptor binding energies in GaN and AlN

inferredcites →https://doi.org/10.1103/physrevb.65.085312openalex-snapshot

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

inferredcites →https://doi.org/10.1103/physrevb.66.233311openalex-snapshot

Donor-related recombination processes in hydride-vapor-phase epitaxial GaN

inferredcites →https://doi.org/10.1103/physrevlett.45.390openalex-snapshot

Optical Detection of Magnetic Resonance for an Effective-Mass-like Acceptor in 6H -SiC

inferredcites →https://doi.org/10.1134/1.1130475openalex-snapshot

Ground-state characteristics of an acceptor center in wide-gap semiconductors with a weak spin-orbit coupling

inferredcites →https://doi.org/10.1143/jjap.19.2395openalex-snapshot

Mechanism of Yellow Luminescence in GaN

inferredcites →https://doi.org/10.1143/jjap.39.l1141openalex-snapshot

Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

inferredcites →https://doi.org/10.1557/s1092578300001174openalex-snapshot

Paramagnetic defects in GaN

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4783066openalex-extracted

Exciton-Phonon and Related Interactions in Fe(Iii)-Doped Gan Nanowires

inferred← citeshttps://doi.org/10.1002/9783527628414.ch5openalex-snapshot

Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures

inferred← citeshttps://doi.org/10.1002/9783527628438.ch4openalex-snapshot

Extended and Point Defects, Doping, and Magnetism

inferred← citeshttps://doi.org/10.1002/pssa.201700362openalex-snapshot

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

inferred← citeshttps://doi.org/10.1002/pssb.200565425openalex-snapshot

The dominant shallow 0.225 eV acceptor in GaN

inferred← citeshttps://doi.org/10.1002/pssc.200565332openalex-snapshot

The magnesium acceptor states in GaN: an investigation by optically‐detected magnetic resonance

inferred← citeshttps://doi.org/10.1007/s11664-016-4413-9openalex-snapshot

Incorporation of Mg in Free-Standing HVPE GaN Substrates

inferred← citeshttps://doi.org/10.1007/s11664-016-5204-zopenalex-snapshot

Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

inferred← citeshttps://doi.org/10.1016/b978-0-08-102053-1.00002-8openalex-snapshot

Point defects in group-III nitrides

inferred← citeshttps://doi.org/10.1016/j.jallcom.2018.02.270openalex-snapshot

Hydrogen diffusion in GaN:Mg and GaN:Si

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2007.03.029openalex-snapshot

Residual impurities in GaN substrates and epitaxial layers grown by various techniques

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2010.04.013openalex-snapshot

Optical probing of low-pressure solution grown GaN crystal properties

inferred← citeshttps://doi.org/10.1016/j.mssp.2006.01.075openalex-snapshot

Optical signatures of dopants in GaN

inferred← citeshttps://doi.org/10.1016/j.physb.2005.12.113openalex-snapshot

Dominant shallow acceptor enhanced by oxygen doping in GaN

inferred← citeshttps://doi.org/10.1016/j.physb.2007.08.179openalex-snapshot

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1021/acsami.8b18088openalex-snapshot

Self-Assembled Single-Crystalline GaN Having a Bimodal Meso/Macropore Structure To Enhance Photoabsorption and Photocatalytic Reactions

inferred← citeshttps://doi.org/10.1021/nl9025743openalex-snapshot

Direct Correlation between Structural and Optical Properties of III−V Nitride Nanowire Heterostructures with Nanoscale Resolution

inferred← citeshttps://doi.org/10.1039/c7ra03119jopenalex-snapshot

The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms

inferred← citeshttps://doi.org/10.1063/1.1868059openalex-snapshot

Luminescence properties of defects in GaN

inferred← citeshttps://doi.org/10.1063/1.1994943openalex-snapshot

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

inferred← citeshttps://doi.org/10.1063/1.2197059openalex-snapshot

Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy

inferred← citeshttps://doi.org/10.1063/1.2204835openalex-snapshot

Determination of acceptor concentration in GaN from photoluminescence

inferred← citeshttps://doi.org/10.1063/1.3607280openalex-snapshot

Doping effects of C, Si and Ge in wurtzite [0001] GaN, AlN, and InN nanowires

inferred← citeshttps://doi.org/10.1063/1.4862928openalex-snapshot

Properties of the main Mg-related acceptors in GaN from optical and structural studies

inferred← citeshttps://doi.org/10.1063/1.4958335openalex-snapshot

Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)

inferred← citeshttps://doi.org/10.1063/1.5011362openalex-snapshot

Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

inferred← citeshttps://doi.org/10.1063/5.0266700openalex-snapshot

Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements

inferred← citeshttps://doi.org/10.1088/0022-3727/43/7/073001openalex-snapshot

Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers

inferred← citeshttps://doi.org/10.1103/physrevb.71.195204openalex-snapshot

Nature of acceptor states in magnesium-doped gallium nitride

inferred← citeshttps://doi.org/10.1103/physrevb.72.121203openalex-snapshot

Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique

inferred← citeshttps://doi.org/10.1103/physrevb.86.115204openalex-snapshot

Modulation frequency dependence of continuous-wave optically/electrically detected magnetic resonance

inferred← citeshttps://doi.org/10.1103/physrevb.87.235208openalex-snapshot

Magnetic resonance and the structure of magnesium acceptors in gallium nitride

inferred← citeshttps://doi.org/10.1364/oe.586294openalex-snapshot

Nature of the 3.28 eV photoluminescence peak in unintentionally doped GaN microdisk grown by Na flux method

inferred← citeshttps://doi.org/10.1557/adv.2016.102openalex-snapshot

Incorporation of Mg into thick free-standing HVPE GaN

inferred← citeshttps://doi.org/10.1557/proc-0892-ff23-12openalex-snapshot

Photoluminescence in wurtzite GaN containing carbon

inferred← citeshttps://doi.org/10.1557/proc-831-e5.10openalex-snapshot

Oxygen related shallow acceptor in GaN

inferred← citeshttps://doi.org/10.3390/solids6030052openalex-snapshot

Luminescence Properties of Defects in GaN: Solved and Unsolved Problems

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