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Boron acceptor concentration in diamond from excitonic recombination intensities
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssa.200405184openalex-snapshot
Radiative recombination in phosphorus-doped CVD diamond
inferredcites →https://doi.org/10.1002/pssa.200671101openalex-snapshot
3D crystal growth model for understanding the role of plasma pre‐treatment on CVD diamond crystal shape
inferredcites →https://doi.org/10.1002/pssa.200776324openalex-snapshot
Cathodoluminescence as a tool to determine the phosphorus concentration in diamond
inferredcites →https://doi.org/10.1002/pssb.2220450235openalex-snapshot
The Kinetics of Donor–Acceptor Transitions in ZnS Type Phosphors
inferredcites →https://doi.org/10.1002/pssr.200903097openalex-snapshot
Resistivity of boron doped diamond
inferredcites →https://doi.org/10.1016/j.diamond.2005.11.039openalex-snapshot
Donor phosphorus interactions observed by bound exciton luminescence in CVD diamond
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.07.046openalex-snapshot
The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD
inferredcites →https://doi.org/10.1063/1.1515375openalex-snapshot
Method for shallow impurity characterization in ultrapure silicon using photoluminescence
inferredcites →https://doi.org/10.1063/1.2735408openalex-snapshot
Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy
inferredcites →https://doi.org/10.1063/1.89897openalex-snapshot
Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
inferredcites →https://doi.org/10.1088/0268-1242/18/3/303openalex-snapshot
The boron acceptor in diamond
inferredcites →https://doi.org/10.1103/physrev.140.a352openalex-snapshot
Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped Diamond
inferredcites →https://doi.org/10.1103/physrevb.47.3633openalex-snapshot
Excitonic recombination radiation in undoped and boron-doped chemical-vapor-deposited diamonds
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1002/pssa.201200045openalex-snapshot
Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?
inferred← citeshttps://doi.org/10.1002/pssa.201200136openalex-snapshot
Homoepitaxial boron‐doped diamond with very low compensation
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In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si
inferred← citeshttps://doi.org/10.1002/pssa.201300044openalex-snapshot
Spatially and spectrally resolved cathodoluminescence with fast electrons: A tool for background subtraction in luminescence intensity second‐order correlation measurements applied to subwavelength inhomogeneous diamond nanocrystals
inferred← citeshttps://doi.org/10.1002/pssa.201532206openalex-snapshot
Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus
inferred← citeshttps://doi.org/10.1002/pssa.201532230openalex-snapshot
Characterization of the charge‐carrier transport properties of IIa‐Tech SC diamond for radiation detection applications
inferred← citeshttps://doi.org/10.1002/pssa.201700402openalex-snapshot
Luminescence Spectroscopy of Bound Excitons in Diamond
inferred← citeshttps://doi.org/10.1002/pssb.201100381openalex-snapshot
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
inferred← citeshttps://doi.org/10.1016/b978-0-08-102183-5.00001-7openalex-snapshot
Heteroepitaxy of diamond on Ir/metal-oxide/Si substrates
inferred← citeshttps://doi.org/10.1016/b978-0-08-102183-5.00005-4openalex-snapshot
Device formation and the characterizations
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Quantum Nanooptics in the Electron Microscope
inferred← citeshttps://doi.org/10.1016/bs.semsem.2020.03.002openalex-snapshot
Ultrapure homoepitaxial diamond films grown by chemical vapor deposition for quantum device application
inferred← citeshttps://doi.org/10.1016/j.apsusc.2019.143564openalex-snapshot
Dislocations imaging in low boron doped diamond epilayers using Field Emission Scanning Electron Microscopy (FE-SEM)
inferred← citeshttps://doi.org/10.1016/j.carbon.2022.01.030openalex-snapshot
Boron quantification, concentration mapping and picosecond excitons dynamics in High-Pressure-High-Temperature diamond by cathodoluminescence
inferred← citeshttps://doi.org/10.1016/j.diamond.2011.05.010openalex-snapshot
Study of boron doping in MPCVD grown homoepitaxial diamond layers based on cathodoluminescence spectroscopy, secondary ion mass spectroscopy and capacitance–voltage measurements
inferred← citeshttps://doi.org/10.1016/j.diamond.2013.11.002openalex-snapshot
High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates
inferred← citeshttps://doi.org/10.1016/j.diamond.2014.06.001openalex-snapshot
Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition
inferred← citeshttps://doi.org/10.1016/j.diamond.2015.01.006openalex-snapshot
Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates
inferred← citeshttps://doi.org/10.1016/j.diamond.2015.05.003openalex-snapshot
Preferential orientation of NV defects in CVD diamond films grown on (113)-oriented substrates
inferred← citeshttps://doi.org/10.1016/j.diamond.2015.10.028openalex-snapshot
Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001)
inferred← citeshttps://doi.org/10.1016/j.diamond.2016.04.006openalex-snapshot
Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium
inferred← citeshttps://doi.org/10.1016/j.diamond.2017.04.007openalex-snapshot
Plasma etching phenomena in heavily boron-doped diamond growth
inferred← citeshttps://doi.org/10.1016/j.diamond.2017.07.002openalex-snapshot
Thick CVD diamond films grown on high-quality type IIa HPHT diamond substrates from New Diamond Technology
inferred← citeshttps://doi.org/10.1016/j.diamond.2018.12.009openalex-snapshot
Ohmic graphite-metal contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond
inferred← citeshttps://doi.org/10.1016/j.diamond.2019.02.029openalex-snapshot
Automated FTIR mapping of boron distribution in diamond
inferred← citeshttps://doi.org/10.1016/j.diamond.2020.107936openalex-snapshot
WITHDRAWN: Automated FTIR mapping of boron distribution in diamond
inferred← citeshttps://doi.org/10.1016/j.diamond.2022.109425openalex-snapshot
Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding
inferred← citeshttps://doi.org/10.1016/j.diamond.2025.113065openalex-snapshot
The regulation mechanism of oxygen additives on diamond growth and residual boron by microwave plasma chemical vapor deposition
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.113327openalex-snapshot
Optical and electrical properties of CVD boron-doped diamond following HPHT annealing
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.114212openalex-snapshot
The regulation of the crystalline, fluorescence, and spin properties of nitrogen-doped diamond films by controlling boron precursors
inferred← citeshttps://doi.org/10.1016/j.mssp.2016.11.012openalex-snapshot
Homoepitaxial diamond chemical vapor deposition for ultra-light doping
inferred← citeshttps://doi.org/10.1016/j.mtcomm.2023.106145openalex-snapshot
Superhard and superconductive polycrystalline boron doped diamond synthesized with different concentration of B4C
inferred← citeshttps://doi.org/10.1016/j.ultramic.2017.03.014openalex-snapshot
Cathodoluminescence in the scanning transmission electron microscope
inferred← citeshttps://doi.org/10.1039/c1cp20303gopenalex-snapshot
Hydrogen-induced passivation of boron acceptors in monocrystalline and polycrystalline diamond
inferred← citeshttps://doi.org/10.1063/1.3689783openalex-snapshot
Determination of exciton diffusion lengths in isotopically engineered diamond junctions
inferred← citeshttps://doi.org/10.1063/5.0190729openalex-snapshot
Carrier trapping in diamond Schottky barrier diode
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Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence
inferred← citeshttps://doi.org/10.1103/physrevb.105.165201openalex-snapshot
Negatively charged boron vacancy center in diamond
inferred← citeshttps://doi.org/10.1103/physrevb.89.035414openalex-snapshot
Excitonic recombinations in h−BN : From bulk to exfoliated layers
inferred← citeshttps://doi.org/10.1103/physrevb.89.045201openalex-snapshot
Arsenic-bound excitons in diamond
inferred← citeshttps://doi.org/10.1103/physrevb.93.115202openalex-snapshot
Picosecond dynamics of free and bound excitons in doped diamond
inferred← citeshttps://doi.org/10.1103/physrevmaterials.2.094601openalex-snapshot
Quantitative relevance of substitutional impurities to carrier dynamics in diamond
inferred← citeshttps://doi.org/10.1103/physrevmaterials.4.093402openalex-snapshot
Decoration of growth sector boundaries with nitrogen vacancy centers in as-grown single crystal high-pressure high-temperature synthetic diamond
inferred← citeshttps://doi.org/10.1109/ted.2020.2989733openalex-snapshot
Influence of Different Surface Morphologies on the Performance of High-Voltage, Low-Resistance Diamond Schottky Diodes
inferred← citeshttps://doi.org/10.1134/s1064226918070148openalex-snapshot
Diamond Diode Structures Based on Homoepitaxial Films
inferred← citeshttps://doi.org/10.3379/msjmag.1206r006openalex-snapshot
Ferromagnetic Schottky junctions using diamond semiconductors
inferred← citeshttps://doi.org/10.35848/1347-4065/ac6480openalex-snapshot
Comparison of thermal stabilities of p+-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes
inferred← citeshttps://doi.org/10.48550/arxiv.1504.02011openalex-snapshot
Preferential orientation of NV defects in CVD diamond films grown on (113) substrates
inferred← citeshttps://doi.org/10.70675/321f842dz5b56z4911za69bz2d0d7ecad3c6openalex-snapshot
Épaississement et dopage de films de diamant hétéroépitaxiés sur substrats multicouches Ir/SrTiO₃/Si (100)
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Diamanti : sintesi e fabbricazione di contatti per applicazioni di rivelazione
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Croissance de diamant monocristallin épais et élargi de haute qualité dopé au bore : étude et réduction des défauts étendus pour l'optimisation des dispositifs de haute puissance pour une transition énergétique propre
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Films de diamant monocristallin dopés au bore pour des applications en électronique de puissance
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Suppression of killer defects in diamond vertical-type Schottky barrier diodes
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