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A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1109/iedm.1990.237216openalex-snapshot
A 2.3 mu m/sup 2/ memory cell structure for 16 Mb NAND EEPROMs
inferredcites →https://doi.org/10.1109/isscc.1989.48209openalex-snapshot
An experimental 4 Mb CMOS EEPROM with a NAND structured cell
inferredcites →https://doi.org/10.1109/isscc.1995.535459openalex-snapshot
A 34 Mb 3.3 V serial flash EEPROM for solid-state disk applications
inferredcites →https://doi.org/10.1109/jssc.1989.572587openalex-snapshot
An experimental 4-Mbit CMOS EEPROM with a NAND-structured cell
inferredcites →https://doi.org/10.1109/vlsic.1992.229256openalex-snapshot
A quick intelligent program architecture for 3 V-only NAND-EEPROMs
inferredcites →https://doi.org/10.1109/vlsic.1994.586214openalex-snapshot
High-Speed Programming and Program-Verify Methods Suitable for Low-Voltage Flash Memories
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Principle of Nand Flash Memory
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Advanced Operation for Multilevel Cell
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Scaling Challenge Of Nand Flash Memory Cells
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Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
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Review of Semiconductor Flash Memory Devices for Material and Process Issues
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Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing
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MoS 2 Channel‐Enhanced High‐Density Charge Trap Flash Memory and Machine Learning‐Assisted Sensing Methodologies for Memory‐Centric Computing Systems
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Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems
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A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation
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Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing
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Vertical NAND Flash Memory‐Based Bayesian Neural Networks With Intrinsic Gaussian Weight Sampling
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Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics
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System Overview and Key Design Considerations
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System Overview and Key Design Considerations
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Algorithms to Survive: Programming Operation in Non-Volatile Memories
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Non-Data-Storage Applications
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Overview of Embedded Flash Memory Technology
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High-Capacity NAND Flash Memories: XLC Storage and Single-Die 3D
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Design and Applications of Dependable Nonvolatile Memory Systems
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Time-Dependent Degradation in Device Characteristics and Countermeasures by Design
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Low power 3D-integrated SSD
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Program and erase of NAND memory arrays
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Low Power Mobile Storage: SSD Case Study
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Fundamentals of Non-Volatile Memories
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3D Stacked NAND Flash Memories
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Reliability Issues in Flash-Memory-Based Solid-State Drives: Experimental Analysis, Mitigation, Recovery
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On the Case of Using Aggregated Page Programming for Future MLC NAND Flash Memory
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Least Squares Based Coupling Cancelation for MLC NAND Flash Memory with a Small Number of Voltage Sensing Operations
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DIR: Dynamic Request Interleaving for Improving the Read Performance of Aged Solid-State Drives
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NAND Flash technology status and perspectives
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Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs
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Designing a bidirectional, adaptive neural interface incorporating machine learning capabilities and memristor-enhanced hardware
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Error correction and mitigation techniques in SSDs: A survey
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Improving the reliability of chip-off forensic analysis of NAND flash memory devices
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Artificial mechanoreceptor based on van der Waals stacking structure
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Impact of etch angles on cell characteristics in 3D NAND flash memory
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3D-MANN: A 3D NAND flash-based reconfigurable architecture for Memory Augmented Neural Networks
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Extraction of 3D parasitic capacitances in 90nm and 22nm NAND flash memories
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Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
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Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories
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FPGA-based reliability testing and analysis for 3D NAND flash memory
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Quantitative analysis of irregular channel shape effects on charge-trapping efficiency using massive 3D NAND data
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Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide
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Hafnia-based ferroelectric computer vision system with artificial synaptic array
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A back-pattern-dependency-free synaptic string architecture using vertical NAND flash memory
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Hybrid approximate-accurate neural network using vertical NAND flash memory
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Vertical NAND flash memory-based matrix-matrix multiplication scheme for energy-efficient attention score computation
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On the distribution of the threshold voltage in multi-level cell flash memories
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Floating gate technology for high performance 8-level 3-bit NAND flash memory
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A 1.0V power supply, 9.3GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD
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Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories
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A scaling scenario of asymmetric coding to reduce both data retention and program disturbance of NAND flash memories
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Improvement of the multi-level cell performance by a soft program method in flash memory devices
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Word line program disturbance based data retention error recovery strategy for MLC NAND Flash
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Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash
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Improved ISPP scheme for narrow threshold voltage distribution in 3-D NAND flash memory
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Benchmarking for Observability: The Case of Diagnosing Storage Failures
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Architecture of non volatile memory with multi-bit cells
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A Vertically Integrated Junctionless Nanowire Transistor
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Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System
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Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate
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Seamlessly fused digital-analogue reconfigurable computing using memristors
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Ferroelectric transistors for low-power NAND flash memory
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Memristive synapses with high reproducibility for flexible neuromorphic networks based on biological nanocomposites
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Efficient low‐complexity two‐dimensional equalisation technique for multi‐level cell flash memory storage systems
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Threshold‐voltage‐drift‐aware scheduling for belief propagation decoding of LDPC‐coded NAND flash memory
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GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications
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Nonvolatile reversible capacitance changes through filament formation in a floating-gate metal-oxide-semiconductor capacitor with Ag/CeOx/Pt/HfOx/n-Si structure
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Retention improvement in vertical NAND flash memory using block soft erase scheme
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Correlation between the macroscopic ferroelectric material properties of Si:HfO 2 and the statistics of 28 nm FeFET memory arrays
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A New Programming Disturbance Phenomenon in NAND Flash Memory By Source/Drain Hot-Electrons Generated By GIDL Current
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Single-event upset in flash memories
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A double-level-V/sub th/ select gate array architecture for multilevel NAND flash memories
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A multipage cell architecture for high-speed programming multilevel NAND flash memories
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A 64-Mbit, 640-MByte/s bidirectional data strobed, double-data-rate SDRAM with a 40-mW DLL for a 256-MByte memory system
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A negative V/sub th/ cell architecture for highly scalable, excellently noise-immune, and highly reliable NAND flash memories
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Extraction of Device Fingerprints Using Built-in Erase-Suspend Operation of Flash Memory Devices
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A Preliminary Study: Towards Parallel Garbage Collection for NAND Flash-Based SSDs
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Holistic Optimization of Trap Distribution for Performance/Reliability in 3-D NAND Flash Using Machine Learning
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Dual-Doped Cylindrical Bit-Line Pad for High-Efficiency Bulk Erase in V-NAND Flash
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Balanced codes for data retention of multi-level flash memories with fast page read
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Training, Programming, and Correction Techniques of Memristor-Crossbar Neural Networks with Non-Ideal Effects such as Defects, Variation, and Parasitic Resistance
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DI-SSD: Desymmetrized interconnection architecture and dynamic timing calibration for solid-state drives
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A Comparison between 63nm 8Gb and 90nm 4Gb Multi-Level Cell NAND Flash Memory for Mass Storage Application
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High-voltage wordline generator for low-power program operation in NAND flash memories
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Reliability Characterization of Solid State Drives in a Scalable Production Datacenter
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Dynamic write-level and read-level signal design for MLC NAND flash memory
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FlashPower: A detailed power model for NAND flash memory
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Diversifying wear index for MLC NAND flash memory to extend the lifetime of SSDs
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Statistical Analysis of Flash Memory Read Data
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Minimal Maximum-Level Programming: Faster memory access via multi-level cell sharing
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Fractional Bits-Per-Cell for NAND Flash with Low Read Latency
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Techniques for embracing intra-cell unbalanced bit error characteristics in MLC NAND flash memory
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Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques
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Efficient Bad Block Management with Cluster Similarity
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MGC: Multiple-Gray-Code for 3D NAND Flash based High-Density SSDs
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Midas Touch: Invalid-Data Assisted Reliability and Performance Boost for 3d High-Density Flash
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N-DIPPER: A Distributed Inter-Die Peak Power Management Network for Nand Systems
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ACWB: Access-Characteristic Write Buffer Management Scheme for Flash Memory
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Least squares based cell-to-cell interference cancelation technique for multi-level cell nand flash memory
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Concatenated BCH codes for NAND flash memories
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Reducing data transfer latency of NAND flash memory with soft-decision sensing
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Performance of rate 0.96 (68254, 65536) EG-LDPC code for NAND Flash memory error correction
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Coding scheme for 3D vertical flash memory
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Spread programming for NAND flash
inferred← citeshttps://doi.org/10.1109/icc.2016.7510726openalex-snapshot
Towards an analytical model of NAND flash memory and the impact on channel decoding
inferred← citeshttps://doi.org/10.1109/icc.2019.8761562openalex-snapshot
Garbage Collection Algorithms for Meta Data Updates in NAND Flash
inferred← citeshttps://doi.org/10.1109/iccd.2012.6378623openalex-snapshot
Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime
inferred← citeshttps://doi.org/10.1109/iccd.2013.6657034openalex-snapshot
Program interference in MLC NAND flash memory: Characterization, modeling, and mitigation
inferred← citeshttps://doi.org/10.1109/iccd.2014.6974682openalex-snapshot
Exploit asymmetric error rates of cell states to improve the performance of flash memory storage systems
inferred← citeshttps://doi.org/10.1109/iccd53106.2021.00035openalex-snapshot
EFM: Elastic Flash Management to Enhance Performance of Hybrid Flash Memory
inferred← citeshttps://doi.org/10.1109/iccd56317.2022.00012openalex-snapshot
A Flash-based Digital to Analog Converter for Low Power Applications
inferred← citeshttps://doi.org/10.1109/iccnc.2012.6167491openalex-snapshot
Noise and interference characterization for MLC flash memories
inferred← citeshttps://doi.org/10.1109/icecs46596.2019.8964896openalex-snapshot
Defect-Tolerant Crossbar Training of Memristor Ternary Neural Networks
inferred← citeshttps://doi.org/10.1109/icicn52636.2021.9673965openalex-snapshot
A Method of Soft-Sensing Log-Likelihood Ratios Based on Broad Learning System for NAND Flash Memories
inferred← citeshttps://doi.org/10.1109/icpads.2016.0078openalex-snapshot
Improving MLC Flash Performance with Workload-Aware Differentiated ECC
inferred← citeshttps://doi.org/10.1109/iedm.2000.904430openalex-snapshot
A 0.15 μm NAND flash technology with 0.11 μm/sup 2/ cell size for 1 Gbit flash memory
inferred← citeshttps://doi.org/10.1109/iedm.2001.979394openalex-snapshot
Highly manufacturable 1 Gb NAND flash using 0.12 μm process technology
inferred← citeshttps://doi.org/10.1109/iedm.2002.1175986openalex-snapshot
A 2 Gb NAND flash memory with 0.044 μm/sup 2/ cell size using 90 nm flash technology
inferred← citeshttps://doi.org/10.1109/iedm.2005.1609493openalex-snapshot
Robust multi-bit programmable flash memory using a resonant tunnel barrier
inferred← citeshttps://doi.org/10.1109/iedm.2006.346946openalex-snapshot
Multi-level p+ tri-gate SONOS NAND string arrays
inferred← citeshttps://doi.org/10.1109/iedm.2006.346956openalex-snapshot
Improving the Cell Characteristics Using Low-k Gate Spacer in 1Gb NAND Flash Memory
inferred← citeshttps://doi.org/10.1109/iedm.2007.4418891openalex-snapshot
Study of Local Trapping and STI Edge Effects on Charge-Trapping NAND Flash
inferred← citeshttps://doi.org/10.1109/iedm.2007.4419100openalex-snapshot
A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET
inferred← citeshttps://doi.org/10.1109/iedm.2008.4796826openalex-snapshot
Novel model for cell - system interaction (MCSI) in NAND Flash
inferred← citeshttps://doi.org/10.1109/iedm.2015.7409635openalex-snapshot
Charge storage efficiency (CSE) effect in modeling the incremental step pulse programming (ISPP) in charge-trapping 3D NAND flash devices
inferred← citeshttps://doi.org/10.1109/ieeestd.1998.89425openalex-snapshot
IEEE Standard Definitions and Characterization of Floating Gate Semiconductor Arrays
inferred← citeshttps://doi.org/10.1109/iirw.2012.6468918openalex-snapshot
Characterization of cell to cell interference in TANOS NAND flash memory
inferred← citeshttps://doi.org/10.1109/iirw.2017.8361236openalex-snapshot
Effect of radiation and endurance on pulsed programming of commercial NAND Flash memory
inferred← citeshttps://doi.org/10.1109/iiswc47752.2019.9042009openalex-snapshot
Faster than Flash: An In-Depth Study of System Challenges for Emerging Ultra-Low Latency SSDs
inferred← citeshttps://doi.org/10.1109/iitc.2011.5940297openalex-snapshot
Scaling effect of device area and film thickness on electrical and reliability characteristics of RRAM
inferred← citeshttps://doi.org/10.1109/imw.2009.5090582openalex-snapshot
Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology
inferred← citeshttps://doi.org/10.1109/imw.2010.5488397openalex-snapshot
Low power 3D-integrated Solid-State Drive (SSD) with adaptive voltage generator
inferred← citeshttps://doi.org/10.1109/imw.2011.5873227openalex-snapshot
A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory
inferred← citeshttps://doi.org/10.1109/imw.2011.5873235openalex-snapshot
Bridging Lithography Processes with NAND Flash ECC Complexity
inferred← citeshttps://doi.org/10.1109/imw.2012.6213643openalex-snapshot
Spacer-Defined EUV Lithography Reducing Variability of 12nm NAND Flash Memories
inferred← citeshttps://doi.org/10.1109/imw.2013.6582101openalex-snapshot
Channel Coupling phenomenon as scaling barrier of NAND flash memory beyond 20nm node
inferred← citeshttps://doi.org/10.1109/imw56887.2023.10145932openalex-snapshot
Analog Tuning of Floating-Gate Cells with Sub-Elementary Charge Accuracy for In-Memory Computing Applications
inferred← citeshttps://doi.org/10.1109/ipec.2012.6522626openalex-snapshot
Adaptive program verify scheme for improving NAND flash memory performance and lifespan
inferred← citeshttps://doi.org/10.1109/ipfa.2013.6599244openalex-snapshot
Optimal Vth window in endurance and retention enhancement of MLC flash
inferred← citeshttps://doi.org/10.1109/irps.2009.5173265openalex-snapshot
Characterization of threshold voltage instability after program in charge trap flash memory
inferred← citeshttps://doi.org/10.1109/irps.2010.5488765openalex-snapshot
New scaling limitation of the floating gate cell in NAND Flash Memory
inferred← citeshttps://doi.org/10.1109/irps.2011.5784549openalex-snapshot
Junction optimization for Reliability issues in floating gate NAND flash cells
inferred← citeshttps://doi.org/10.1109/irps.2011.5784588openalex-snapshot
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories
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