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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

https://doi.org/10.1109/access.2021.3098061

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ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices

showing the first 200 of 339 · page through all 339

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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