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SIC power devices in power electronics: An overview

https://doi.org/10.1109/cobep.2017.8257396
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/978-0-387-47314-7openalex-snapshot
Fundamentals of Power Semiconductor Devices
inferredcites →https://doi.org/10.1109/16.34247openalex-snapshot
Optimum semiconductors for high-power electronics
inferredcites →https://doi.org/10.1109/aero.2004.1368048openalex-snapshot
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
inferredcites →https://doi.org/10.1109/apec.2010.5433365openalex-snapshot
18 kW three phase inverter system using hermetically sealed SiC phase-leg power modules
inferredcites →https://doi.org/10.1109/apec.2011.5744597openalex-snapshot
Integrated common mode capacitors for SiC JFET inverters
inferredcites →https://doi.org/10.1109/apec.2011.5744758openalex-snapshot
A 120°C ambient temperature forced air-cooled normally-off SiC JFET automotive inverter system
inferredcites →https://doi.org/10.1109/apec.2011.5744759openalex-snapshot
High current and thermal transient design of a SiC SSPC for aircraft application
inferredcites →https://doi.org/10.1109/ecce.2010.5618274openalex-snapshot
High-power modular multilevel converters with SiC JFETs
inferredcites →https://doi.org/10.1109/ecce.2012.6342435openalex-snapshot
Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications
inferredcites →https://doi.org/10.1109/ecce.2014.6954024openalex-snapshot
Design and operation of A 3.6kV high performance solid state transformer based on 13kV SiC MOSFET and JBS diode
inferredcites →https://doi.org/10.1109/essderc.2013.6818812openalex-snapshot
Ultrahigh-voltage SiC devices for future power infrastructure
inferredcites →https://doi.org/10.1109/icpe.2011.5944660openalex-snapshot
Challenges regarding parallel-connection of SiC JFETs
inferredcites →https://doi.org/10.1109/icpe.2011.5944662openalex-snapshot
A comparative performance study of an interleaved boost converter using commercialized Si and SiC diodes for PV applications
inferredcites →https://doi.org/10.1109/icpe.2011.5944668openalex-snapshot
High density 50 kW SiC inverter systems using a JFET based six-pack power module
inferredcites →https://doi.org/10.1109/iecon.2008.4758414openalex-snapshot
High temperature (≫200°C) isolated gate drive topologies for Silicon Carbide (SiC) JFET
inferredcites →https://doi.org/10.1109/iedm.2014.7046960openalex-snapshot
Silicon carbide power device development for industrial markets
inferredcites →https://doi.org/10.1109/ipec.2010.5542036openalex-snapshot
Large current SiC power devices for automobile applications
inferredcites →https://doi.org/10.1109/ipec.2010.5543703openalex-snapshot
Advances in SiC VJFETs for renewable and high-efficiency power electronics applications
inferredcites →https://doi.org/10.1109/isie.1998.707767openalex-snapshot
SiC devices for power and high-temperature applications
inferredcites →https://doi.org/10.1109/ispsd.2005.1488011openalex-snapshot
10kV Trench Gate IGBTs on 4H-SiC
inferredcites →https://doi.org/10.1109/ispsd.2007.4294987openalex-snapshot
New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C
inferredcites →https://doi.org/10.1109/ispsd.2008.4538946openalex-snapshot
State of the Art 10 kV NMOS Transistors
inferredcites →https://doi.org/10.1109/ispsd.2012.6229072openalex-snapshot
Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs
inferredcites →https://doi.org/10.1109/jestpe.2013.2271499openalex-snapshot
On a Future for Power Electronics
inferredcites →https://doi.org/10.1109/jestpe.2016.2620991openalex-snapshot
Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions
inferredcites →https://doi.org/10.1109/ppc.2011.6191677openalex-snapshot
SiC super GTO thyristor technology development: Present status and future perspective
inferredcites →https://doi.org/10.1109/ted.2008.926650openalex-snapshot
Characterization, Modeling, and Application of 10-kV SiC MOSFET
inferredcites →https://doi.org/10.1109/ted.2009.2037379openalex-snapshot
High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers
inferredcites →https://doi.org/10.1109/ted.2014.2357812openalex-snapshot
Development of Ultrahigh-Voltage SiC Devices
inferredcites →https://doi.org/10.1109/ted.2016.2532602openalex-snapshot
Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices
inferredcites →https://doi.org/10.1109/tia.2010.2102734openalex-snapshot
Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles
inferredcites →https://doi.org/10.1109/tie.2010.2072896openalex-snapshot
SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors
inferredcites →https://doi.org/10.1109/tpel.2013.2268900openalex-snapshot
A Survey of Wide Bandgap Power Semiconductor Devices
inferredcites →https://doi.org/10.1109/tpel.2013.2294906openalex-snapshot
A 120 °C Ambient Temperature Forced Air-Cooled Normally-off SiC JFET Automotive Inverter System
inferredcites →https://doi.org/10.1109/wipda.2013.6695557openalex-snapshot
Ultra high voltage IGBTs in 4H-SiC
inferredcites →https://doi.org/10.1109/wipda.2015.7369298openalex-snapshot
3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive
inferredcites →https://doi.org/10.1557/proc-423-9openalex-snapshot
SiC Power Devices
inferredcites →https://doi.org/10.2172/885849openalex-snapshot
Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.338-342.1155openalex-snapshot
SiC and GaN High-Voltage Power Switching Devices
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.338-342.1375openalex-snapshot
Theoretical and Experimental Study of 4H-SiC Junction Edge Termination
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.457-460.1257openalex-snapshot
Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.600-603.1183openalex-snapshot
A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.821-823.847openalex-snapshot
27 kV, 20 A 4H-SiC n-IGBTs

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Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Wide bandgap Materials: Revitalizing Power Electronics with Advances in Power Semiconductor Devices
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Pseudo-optimal five-level DCC modulation based on machine learning
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Circular economy in the power electronics industry: innovative design strategies for sustainable life cycle management.
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Efficiency Comparison of a dc-dc Interleaved Converter Based on SiC-MOSFET and Si-IGBT Devices for EV Chargers
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Efficiency and Power Density Investigation of SiC Based Totem-Pole PFC at High Switching Frequencies
inferred← citeshttps://doi.org/10.1109/ecce-europe62795.2025.11238620openalex-snapshot
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inferred← citeshttps://doi.org/10.70675/b8e363e5z49adz414az9bbfzc67546a750ccopenalex-snapshot
MOSFETs SiC connectés en série : un nouveau concept de packaging et nouvelles configurations d'alimentation de commande rapprochée
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