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Physical and electrical characterization of Mg-doped ZnO thin-film transistors

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/bf01012306openalex-snapshot
Theory of hopping and multiple-trapping transport in disordered systems
inferredcites →https://doi.org/10.1016/b978-008044722-3/50012-9openalex-snapshot
ZnO Thin-Film Transistors
inferredcites →https://doi.org/10.1016/j.tsf.2013.12.004openalex-snapshot
Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases
inferredcites →https://doi.org/10.1039/c4tc02257bopenalex-snapshot
Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals
inferredcites →https://doi.org/10.1063/1.1992666openalex-snapshot
A comprehensive review of ZnO materials and devices
inferredcites →https://doi.org/10.1063/1.3567533openalex-snapshot
Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors
inferredcites →https://doi.org/10.1063/1.3604782openalex-snapshot
Bandgap engineering of sol-gel synthesized amorphous Zn1−xMgxO films
inferredcites →https://doi.org/10.1063/1.4902389openalex-snapshot
Compositional tuning of atomic layer deposited MgZnO for thin film transistors
inferredcites →https://doi.org/10.1103/physrevlett.44.1620openalex-snapshot
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
inferredcites →https://doi.org/10.1109/led.2014.2320520openalex-snapshot
Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors
inferredcites →https://doi.org/10.1109/ted.2011.2155910openalex-snapshot
Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors Part I: Long-Channel Devices
inferredcites →https://doi.org/10.1109/ted.2011.2179549openalex-snapshot
Improved Electrical and Thermal Stability of Solution-Processed Li-Doped ZnO Thin-Film Transistors
inferredcites →https://doi.org/10.1116/1.591472openalex-snapshot
Band offsets of wide-band-gap oxides and implications for future electronic devices

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4202059openalex-extracted
Valence Band and Conduction Band Offset between 3% and 7% Ni Doped Znnio and Zno Heterointerfaces
inferred← citeshttps://doi.org/10.1021/acsami.6b11774openalex-snapshot
Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition
inferred← citeshttps://doi.org/10.1021/acsami.7b04985openalex-snapshot
Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications
inferred← citeshttps://doi.org/10.1109/ulis.2016.7440044openalex-snapshot
Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant
inferred← citeshttps://doi.org/10.1116/1.4983086openalex-snapshot
Preparation and effects of O2 flow on the electrical characteristics of Li doped MgZnO thin film transistors
inferred← citeshttps://doi.org/10.1140/epjp/s13360-023-03932-3openalex-snapshot
Laser ablation fabrication of Zn1-xNixO/ZnO heterostructure and valence band offset measurements
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