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Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/j.sse.2008.04.031openalex-snapshot
Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond
inferredcites →https://doi.org/10.1109/iedm.2007.4418932openalex-snapshot
Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention
inferredcites →https://doi.org/10.1109/iedm.2008.4796601openalex-snapshot
Non-volatile memory technologies: The quest for ever lower cost
inferredcites →https://doi.org/10.1109/vlsit.2003.1221143openalex-snapshot
A novel cell technology using N-doped GeSbTe films for phase change RAM
inferredcites →https://doi.org/10.1147/rd.524.0465openalex-snapshot
Phase-change random access memory: A scalable technology
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4464728openalex-extracted
Ultralow Resistance Drift and Interface-Controlled Growth-Dominated Crystallization in Phase-Change Heterostructure Thin Films
inferred← citeshttps://doi.org/10.1002/pssr.202000538openalex-snapshot
Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices
inferred← citeshttps://doi.org/10.1007/978-1-4614-3058-2_3openalex-snapshot
Innovative Structures for Routing and Configuration
inferred← citeshttps://doi.org/10.1007/s42247-024-00911-xopenalex-snapshot
Study of structural, electronic, optical and mechanical properties under pressure of GeTe for use in optoelectronic devices
inferred← citeshttps://doi.org/10.1016/j.jallcom.2024.174832openalex-snapshot
Interface-controlled growth-dominated crystallization enables ultralow resistance drift in GeTe/Sb2Te3 phase-change heterostructure thin films
inferred← citeshttps://doi.org/10.1016/j.jallcom.2024.177519openalex-snapshot
Advances in metal telluride thin films: A comprehensive review of properties and emerging applications
inferred← citeshttps://doi.org/10.1016/j.mee.2010.07.032openalex-snapshot
GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion
inferred← citeshttps://doi.org/10.1016/j.mssp.2015.06.027openalex-snapshot
Study of Ge–Sb–Te and Ge–Te cocktail sources to improve an efficiency of multi-line CVD for phase change memory
inferred← citeshttps://doi.org/10.1016/j.revmat.2025.100015openalex-snapshot
High thermal stability chalcogenide phase-change materials for embedded memory applications
inferred← citeshttps://doi.org/10.1016/j.sse.2011.06.029openalex-snapshot
Carbon-doped GeTe: A promising material for Phase-Change Memories
inferred← citeshttps://doi.org/10.1017/s1759078725102195openalex-snapshot
A germanium telluride switch optically controlled with infrared showing over 30k cycles of operation and 32-fs figure-of-merit
inferred← citeshttps://doi.org/10.1021/acsaelm.6c00054openalex-snapshot
High-Performance Automotive-Grade Phase-Change Memory Based on Single-Phase In 3 Sb 1 Te 2
inferred← citeshttps://doi.org/10.1063/1.4749411openalex-snapshot
Physical aspects of low power synapses based on phase change memory devices
inferred← citeshttps://doi.org/10.1063/5.0058178openalex-snapshot
Wavelength and power dependence on multilevel behavior of phase change materials
inferred← citeshttps://doi.org/10.1088/0022-3727/45/40/405302openalex-snapshot
Effects of Si addition on the crystallization behaviour of GeTe phase change materials
inferred← citeshttps://doi.org/10.1088/0022-3727/48/26/265203openalex-snapshot
Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications
inferred← citeshttps://doi.org/10.1088/1402-4896/ad0945openalex-snapshot
Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell
inferred← citeshttps://doi.org/10.1088/1402-4896/ad75cfopenalex-snapshot
Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide
inferred← citeshttps://doi.org/10.1109/edssc.2015.7285075openalex-snapshot
Material and device performance of TiO2 doped GeTe for ruggedized memory applications
inferred← citeshttps://doi.org/10.1109/esscirc55480.2022.9911327openalex-snapshot
Non-Volatile Ternary Content Addressable Memory based on Phase Change Nanoelectromechanical (NEM) Relay
inferred← citeshttps://doi.org/10.1109/essderc.2012.6343389openalex-snapshot
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption
inferred← citeshttps://doi.org/10.1109/iedm.2010.5703441openalex-snapshot
N-doped GeTe as performance booster for embedded Phase-Change Memories
inferred← citeshttps://doi.org/10.1109/iitc.2011.5940298openalex-snapshot
Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
inferred← citeshttps://doi.org/10.1109/imas55807.2023.10066891openalex-snapshot
Indirect Electrical-Control Through Heating of a GeTe Phase Change Switch and Its Application to Reflexion Type Phase Shifting
inferred← citeshttps://doi.org/10.1109/imw.2012.6213683openalex-snapshot
Lowering the Reset Current and Power Consumption of Phase-Change Memories with Carbon-Doped Ge2Sb2Te5
inferred← citeshttps://doi.org/10.1109/isape62431.2024.10841018openalex-snapshot
A Single Single-Pole-3-Throw RF Phase Change Switch Based on GeTe Thin Films
inferred← citeshttps://doi.org/10.1109/jproc.2017.2710217openalex-snapshot
Phase Change and Magnetic Memories for Solid-State Drive Applications
inferred← citeshttps://doi.org/10.1109/led.2010.2044136openalex-snapshot
Electrical Behavior of Phase-Change Memory Cells Based on GeTe
inferred← citeshttps://doi.org/10.1109/led.2010.2051135openalex-snapshot
Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention
inferred← citeshttps://doi.org/10.1109/led.2014.2308909openalex-snapshot
RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming
inferred← citeshttps://doi.org/10.1109/led.2019.2922996openalex-snapshot
Realization of Storage and Synaptic Simulation Behaviors Based on Different Forming Modes
inferred← citeshttps://doi.org/10.1109/mems49605.2023.10052605openalex-snapshot
Sub-300 Millivolt Operation in Nonvolatile 300 nm x 100 nm Phase Change Nanoelectromechanical Switch
inferred← citeshttps://doi.org/10.1109/memsys.2019.8870739openalex-snapshot
High Work Density Gete Mechanical Phase Change Actuator
inferred← citeshttps://doi.org/10.1109/nvmts.2014.7060842openalex-snapshot
ZrO2 doped GeTe for aerospace applications
inferred← citeshttps://doi.org/10.1109/ted.2013.2264323openalex-snapshot
Detailed Analysis of the Role of Thin-${\rm HfO}_{2}$ Interfacial Layer in ${\rm Ge}_{2}{\rm Sb}_{2}{\rm Te}_{5}$-Based PCM
inferred← citeshttps://doi.org/10.1109/ted.2017.2685341openalex-snapshot
Microscopic Origin of Electron Transport Properties and Ultrascalability of Amorphous Phase Change Material Germanium Telluride
inferred← citeshttps://doi.org/10.1109/ted.2021.3114264openalex-snapshot
Capacitance Behavior With Voltage Bias in Phase-Change Memory for Fast Operation
inferred← citeshttps://doi.org/10.1533/9780857098092.2.161openalex-snapshot
Phase change memory (PCM) materials and devices
inferred← citeshttps://doi.org/10.17586/2226-1494-2023-23-5-911-919openalex-snapshot
Switching the electrical properties of thin-film memristive elements based on GeTe by sequences of ultrashort laser pulses
inferred← citeshttps://doi.org/10.23919/eumc65286.2025.11235286openalex-snapshot
A 60 GHz Precise Reflection-Type Phase Shifter with Extremely Small Phase Shift, Based on GeTe Phase-Change Switches
inferred← citeshttps://doi.org/10.23919/eumic61603.2024.10732726openalex-snapshot
Optical Actuation of GeTe Phase-Change RF Switches at 915nm: Performance Comparison for Different GeTe Sizes and Impact of Cycling
inferred← citeshttps://doi.org/10.3390/nano12081340openalex-snapshot
Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy
inferred← citeshttps://doi.org/10.3390/s22114227openalex-snapshot
A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits
inferred← citeshttps://doi.org/10.70675/369fba8cz3df1z44a7z8fe4za658e1f69c23openalex-snapshot
Antennes agiles reconfigurables optiquement dans le domaine millimétrique avec l’intégration de matériaux à changement de phase
inferred← citeshttps://doi.org/10.70675/4c3cb2b7z6a91z4d41z9586z4da4b94737ffopenalex-snapshot
Ingénierie aux échelles nanométriques de matériaux chalcogénures à changement de phase pour les mémoires à changement de phase du futur
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