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Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/smll.201101016openalex-snapshot
Fabrication of Single‐ and Multilayer MoS 2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
inferredcites →https://doi.org/10.1002/smll.201101958openalex-snapshot
Optical Identification of Single‐ and Few‐Layer MoS 2 Sheets
inferredcites →https://doi.org/10.1021/ja0169670openalex-snapshot
Polymer Functionalization for Air-Stable n-Type Carbon Nanotube Field-Effect Transistors
inferredcites →https://doi.org/10.1021/nl048055copenalex-snapshot
Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors
inferredcites →https://doi.org/10.1021/nl2018178openalex-snapshot
How Good Can Monolayer MoS2 Transistors Be?
inferredcites →https://doi.org/10.1021/nl302015vopenalex-snapshot
Integrated Circuits Based on Bilayer MoS 2 Transistors
inferredcites →https://doi.org/10.1021/nl303583vopenalex-snapshot
High Performance Multilayer MoS2 Transistors with Scandium Contacts
inferredcites →https://doi.org/10.1021/nl3043079openalex-snapshot
Chemical Vapor Sensing with Monolayer MoS 2
inferredcites →https://doi.org/10.1021/nl400044mopenalex-snapshot
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
inferredcites →https://doi.org/10.1021/nl400778qopenalex-snapshot
Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
inferredcites →https://doi.org/10.1021/nl401831uopenalex-snapshot
Where Does the Current Flow in Two-Dimensional Layered Systems?
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CMOS-Analogous Wafer-Scale Nanotube-on-Insulator Approach for Submicrometer Devices and Integrated Circuits Using Aligned Nanotubes
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Chemical Doping and Electron−Hole Conduction Asymmetry in Graphene Devices
inferredcites →https://doi.org/10.1021/nn2024557openalex-snapshot
Single-Layer MoS 2 Phototransistors
inferredcites →https://doi.org/10.1021/nn303513copenalex-snapshot
Channel Length Scaling of MoS 2 MOSFETs
inferredcites →https://doi.org/10.1021/nn3059136openalex-snapshot
Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
inferredcites →https://doi.org/10.1038/nature04233openalex-snapshot
Two-dimensional gas of massless Dirac fermions in graphene
inferredcites →https://doi.org/10.1038/nature04235openalex-snapshot
Experimental observation of the quantum Hall effect and Berry's phase in graphene
inferredcites →https://doi.org/10.1038/nature09979openalex-snapshot
High-frequency, scaled graphene transistors on diamond-like carbon
inferredcites →https://doi.org/10.1038/nchem.1589openalex-snapshot
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
inferredcites →https://doi.org/10.1038/nmat3687openalex-snapshot
Mobility engineering and a metal–insulator transition in monolayer MoS2
inferredcites →https://doi.org/10.1039/c2cs35387copenalex-snapshot
Metal dichalcogenide nanosheets: preparation, properties and applications
inferredcites →https://doi.org/10.1063/1.3703595openalex-snapshot
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
inferredcites →https://doi.org/10.1063/1.4765658openalex-snapshot
Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
inferredcites →https://doi.org/10.1063/1.4789365openalex-snapshot
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
inferredcites →https://doi.org/10.1103/physrevlett.105.136805openalex-snapshot
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
inferredcites →https://doi.org/10.1109/led.2012.2184520openalex-snapshot
$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
inferredcites →https://doi.org/10.1109/led.2012.2202630openalex-snapshot
$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming
inferredcites →https://doi.org/10.1109/ted.2011.2159221openalex-snapshot
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Effect of Dielectric Interface on the Performance of MoS2Transistors
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Flexible Molybdenum Disulfide (MoS 2 ) Atomic Layers for Wearable Electronics and Optoelectronics
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Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
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Selectively Metallized 2D Materials for Simple Logic Devices
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High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure
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Polymeric Electron-Selective Contact for Crystalline Silicon Solar Cells with an Efficiency Exceeding 19%
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Direct Measurement of Folding Angle and Strain Vector in Atomically Thin WS2 Using Second-Harmonic Generation
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Electronic Tuning in WSe2/Au via van der Waals Interface Twisting and Intercalation
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MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation
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Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation
inferred← citeshttps://doi.org/10.1021/acsnano.5b05173openalex-snapshot
Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption
inferred← citeshttps://doi.org/10.1021/acsnano.5b05556openalex-snapshot
Recent Advances in Two-Dimensional Materials beyond Graphene
inferred← citeshttps://doi.org/10.1021/acsnano.5b06529openalex-snapshot
Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
inferred← citeshttps://doi.org/10.1021/acsnano.6b01091openalex-snapshot
Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
inferred← citeshttps://doi.org/10.1021/acsnano.6b05674openalex-snapshot
Atomic Structure and Spectroscopy of Single Metal (Cr, V) Substitutional Dopants in Monolayer MoS2
inferred← citeshttps://doi.org/10.1021/acsnano.6c07356openalex-snapshot
Electrostatic Doping of 2D Semiconductors Using Charged Dielectric Thin Films
inferred← citeshttps://doi.org/10.1021/acsnano.7b00285openalex-snapshot
Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment
inferred← citeshttps://doi.org/10.1021/acsnano.9b02540openalex-snapshot
Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers
inferred← citeshttps://doi.org/10.1021/acsnano.9b02785openalex-snapshot
MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering
inferred← citeshttps://doi.org/10.1021/acsomega.0c03719openalex-snapshot
A Linear Relationship between the Charge Transfer Amount and Level Alignment in Molecule/Two-Dimensional Adsorption Systems
inferred← citeshttps://doi.org/10.1021/acsomega.0c03741openalex-snapshot
In Situ Study of Molecular Doping of Chlorine on MoS2 Field Effect Transistor Device in Ultrahigh Vacuum Conditions
inferred← citeshttps://doi.org/10.1021/acsphotonics.3c01660openalex-snapshot
High-Photosensitivity WSe2 Phototransistor with Electrically Self-Isolated C8-BTBT as a Light Absorption Layer
inferred← citeshttps://doi.org/10.1021/acsphotonics.6b00299openalex-snapshot
Interface Engineering in Hybrid Quantum Dot–2D Phototransistors
inferred← citeshttps://doi.org/10.1021/acsphotonics.8b00129openalex-snapshot
Low Noise and Fast Photoresponse of Few-Layered MoS2 Passivated by MA3Bi2Br9
inferred← citeshttps://doi.org/10.1021/am506716aopenalex-snapshot
Photocurrent Response of MoS 2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N 2 Gas Environments
inferred← citeshttps://doi.org/10.1021/jp510662nopenalex-snapshot
Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study
inferred← citeshttps://doi.org/10.1021/nl502603dopenalex-snapshot
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
inferred← citeshttps://doi.org/10.1021/nl504454uopenalex-snapshot
Functionalization of Transition Metal Dichalcogenides with Metallic Nanoparticles: Implications for Doping and Gas-Sensing
inferred← citeshttps://doi.org/10.1021/nn405916topenalex-snapshot
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
inferred← citeshttps://doi.org/10.1021/nn500064sopenalex-snapshot
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
inferred← citeshttps://doi.org/10.1021/nn501580copenalex-snapshot
Electron-Doping-Enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate
inferred← citeshttps://doi.org/10.1021/nn502553mopenalex-snapshot
Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling
inferred← citeshttps://doi.org/10.1021/nn503152ropenalex-snapshot
Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals
inferred← citeshttps://doi.org/10.1021/nn503284nopenalex-snapshot
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
inferred← citeshttps://doi.org/10.1021/nn5048712openalex-snapshot
n- and p‑Type Doping Phenomenon by Artificial DNA and M‑DNA on Two-Dimensional Transition Metal Dichalcogenides
inferred← citeshttps://doi.org/10.1021/nn5052376openalex-snapshot
Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation
inferred← citeshttps://doi.org/10.1021/nn506521popenalex-snapshot
Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte
inferred← citeshttps://doi.org/10.1021/nn506567ropenalex-snapshot
Low Resistance Metal Contacts to MoS2Devices with Nickel-Etched-Graphene Electrodes
inferred← citeshttps://doi.org/10.1021/nn5074435openalex-snapshot
Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane
inferred← citeshttps://doi.org/10.1038/ncomms7564openalex-snapshot
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
inferred← citeshttps://doi.org/10.1038/s41467-020-15776-xopenalex-snapshot
Doping-free complementary WSe2 circuit via van der Waals metal integration
inferred← citeshttps://doi.org/10.1038/s41598-019-53367-zopenalex-snapshot
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
inferred← citeshttps://doi.org/10.1038/s41598-024-67150-2openalex-snapshot
Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts
inferred← citeshttps://doi.org/10.1038/s42005-019-0212-yopenalex-snapshot
Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants
inferred← citeshttps://doi.org/10.1038/srep20333openalex-snapshot
Ultra-low Doping on Two-Dimensional Transition Metal Dichalcogenides using DNA Nanostructure Doped by a Combination of Lanthanide and Metal Ions
inferred← citeshttps://doi.org/10.1039/c5cs00275copenalex-snapshot
Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects
inferred← citeshttps://doi.org/10.1039/c5nr00253bopenalex-snapshot
Tuning the threshold voltage of MoS 2 field-effect transistors via surface treatment
inferred← citeshttps://doi.org/10.1039/c5nr01044fopenalex-snapshot
Carrier transport at the metal–MoS 2 interface
inferred← citeshttps://doi.org/10.1039/c6nr00380jopenalex-snapshot
Performance of field-effect transistors based on Nb x W 1−x S 2 monolayers
inferred← citeshttps://doi.org/10.1039/c6nr06980kopenalex-snapshot
Highly efficient and stable MoS 2 FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating
inferred← citeshttps://doi.org/10.1039/c7cp00589jopenalex-snapshot
Triethanolamine doped multilayer MoS 2 field effect transistors
inferred← citeshttps://doi.org/10.1039/c7cp03669hopenalex-snapshot
Non-invasively improving the Schottky barriers of metal–MoS 2 interfaces: effects of atomic vacancies in a BN buffer layer
inferred← citeshttps://doi.org/10.1039/c7nr01883eopenalex-snapshot
Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment
inferred← citeshttps://doi.org/10.1039/c7ra01222eopenalex-snapshot
Enhanced photoresponse of ZnO quantum dot-decorated MoS 2 thin films
inferred← citeshttps://doi.org/10.1039/c7tc02790gopenalex-snapshot
Combining 2D inorganic semiconductors and organic polymers at the frontier of the hard–soft materials interface
inferred← citeshttps://doi.org/10.1039/c7tc05679fopenalex-snapshot
High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes
inferred← citeshttps://doi.org/10.1039/c8cs00024gopenalex-snapshot
Two-dimensional transition metal dichalcogenides: interface and defect engineering
inferred← citeshttps://doi.org/10.1039/c8cs00159fopenalex-snapshot
The organic–2D transition metal dichalcogenide heterointerface
inferred← citeshttps://doi.org/10.1039/c8cs00169copenalex-snapshot
Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides
inferred← citeshttps://doi.org/10.1039/c8nr07070aopenalex-snapshot
Controlled p-type substitutional doping in large-area monolayer WSe 2 crystals grown by chemical vapor deposition
inferred← citeshttps://doi.org/10.1039/c8sc02609bopenalex-snapshot
Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides
inferred← citeshttps://doi.org/10.1039/c9cp04490fopenalex-snapshot
Work function of GaAs( hkl ) and its modification using PEI: mechanisms and substrate dependence
inferred← citeshttps://doi.org/10.1039/c9cs00348gopenalex-snapshot
Synergistic additive-mediated CVD growth and chemical modification of 2D materials
inferred← citeshttps://doi.org/10.1039/c9nh00743aopenalex-snapshot
Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges
inferred← citeshttps://doi.org/10.1039/c9tc04318gopenalex-snapshot
A high-pressure enhanced coupling effect between graphene electrical contacts and two-dimensional materials thereby improving the performance of their constituent FET devices
inferred← citeshttps://doi.org/10.1039/d0na00309copenalex-snapshot
The prospective application of a graphene/MoS 2 heterostructure in Si-HIT solar cells for higher efficiency
inferred← citeshttps://doi.org/10.1039/d0tc02939dopenalex-snapshot
Air stable and reversible n-type surface functionalization of MoS 2 monolayer using Arg and Lys amino acids
inferred← citeshttps://doi.org/10.1039/d1cp00842kopenalex-snapshot
Non-invasively improving the Schottky barrier of MoS 2 /metal contacts by inserting a SiC layer
inferred← citeshttps://doi.org/10.1039/d1tc01463copenalex-snapshot
Fermi-level depinning of 2D transition metal dichalcogenide transistors
inferred← citeshttps://doi.org/10.1039/d2na00817copenalex-snapshot
Electrical monitoring of organic crystal phase transition using MoS 2 field effect transistor
inferred← citeshttps://doi.org/10.1039/d3cs00817gopenalex-snapshot
Layer-by-layer thinning of two-dimensional materials
inferred← citeshttps://doi.org/10.1039/d3nh00310hopenalex-snapshot
van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device
inferred← citeshttps://doi.org/10.1039/d3qi02016aopenalex-snapshot
Manipulating the crystallization and interfacial charge behavior with a jellyfish-like molecular template for efficient perovskite solar cells
inferred← citeshttps://doi.org/10.1039/d5tc00889aopenalex-snapshot
Molecular engineering of polarity control in two-dimensional materials for optoelectronic applications
inferred← citeshttps://doi.org/10.1063/1.4890084openalex-snapshot
Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions
inferred← citeshttps://doi.org/10.1063/1.4893143openalex-snapshot
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
inferred← citeshttps://doi.org/10.1063/1.4894198openalex-snapshot
Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
inferred← citeshttps://doi.org/10.1063/1.4902866openalex-snapshot
Contact-dependent performance variability of monolayer MoS2 field-effect transistors
inferred← citeshttps://doi.org/10.1063/1.4938145openalex-snapshot
MoS2 thin films as electrically tunable materials for microwave applications
inferred← citeshttps://doi.org/10.1063/1.4955071openalex-snapshot
Potential application of mono/bi-layer molybdenum disulfide (MoS2) sheet as an efficient transparent conducting electrode in silicon heterojunction solar cells
inferred← citeshttps://doi.org/10.1063/1.4972781openalex-snapshot
Molecular doping of MoS2 transistors by self-assembled oleylamine networks
inferred← citeshttps://doi.org/10.1063/1.4983092openalex-snapshot
P-type conduction in two-dimensional MoS2 via oxygen incorporation
inferred← citeshttps://doi.org/10.1063/1.4989598openalex-snapshot
Enhanced p-type behavior in the hybrid structure of graphene quantum dots/2D-WSe2
inferred← citeshttps://doi.org/10.1063/1.4991961openalex-snapshot
Annealed Ag contacts to MoS2 field-effect transistors
inferred← citeshttps://doi.org/10.1063/1.5029315openalex-snapshot
Reaction of N,N’-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide
inferred← citeshttps://doi.org/10.1063/5.0075162openalex-snapshot
Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process
inferred← citeshttps://doi.org/10.1063/5.0196668openalex-snapshot
Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition
inferred← citeshttps://doi.org/10.1063/5.0278919openalex-snapshot
Controllable p-type doping for 2D-WSe2 and application in charge trap flash
inferred← citeshttps://doi.org/10.1080/10584587.2014.956611openalex-snapshot
Preparation, Applications of Two-Dimensional Graphene-like Molybdenum Disulfide
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