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Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

https://doi.org/10.1109/ted.2020.2989736

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/0471749095openalex-snapshot

Semiconductor Material and Device Characterization

inferredcites →https://doi.org/10.1007/s10854-006-8091-xopenalex-snapshot

Theoretical modelling of dopants in diamond

inferredcites →https://doi.org/10.1016/j.diamond.2009.01.020openalex-snapshot

Structural and electrical properties of H-terminated diamond field-effect transistor

inferredcites →https://doi.org/10.1016/j.diamond.2016.04.014openalex-snapshot

Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers

inferredcites →https://doi.org/10.1016/j.diamond.2016.10.016openalex-snapshot

Comparison of field-effect transistors on polycrystalline and single-crystal diamonds

inferredcites →https://doi.org/10.1016/s1369-7021(07)70349-8openalex-snapshot

Diamond as an electronic material

inferredcites →https://doi.org/10.1038/s41598-018-21579-4openalex-snapshot

Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides

inferredcites →https://doi.org/10.1039/c4tc01224kopenalex-snapshot

Organic light emitting diodes with environmentally and thermally stable doped graphene electrodes

inferredcites →https://doi.org/10.1049/ip-i-1.1983.0026openalex-snapshot

New hot-carrier injection and device degradation in submicron MOSFETs

inferredcites →https://doi.org/10.1063/1.112915openalex-snapshot

Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds

inferredcites →https://doi.org/10.1063/1.4832455openalex-snapshot

Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study

inferredcites →https://doi.org/10.1063/1.4940749openalex-snapshot

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

inferredcites →https://doi.org/10.1063/1.4955469openalex-snapshot

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

inferredcites →https://doi.org/10.1103/physrevlett.85.3472openalex-snapshot

Origin of Surface Conductivity in Diamond

inferredcites →https://doi.org/10.1109/16.249436openalex-snapshot

Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs

inferredcites →https://doi.org/10.1109/csics.2016.7751060openalex-snapshot

Recent Progress of Diamond Devices for RF Applications

inferredcites →https://doi.org/10.1109/iedm.2007.4419088openalex-snapshot

High-performance p-channel diamond MOSFETs with alumina gate insulator

inferredcites →https://doi.org/10.1109/led.2018.2856920openalex-snapshot

Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5 as a Surface Electron Acceptor

inferredcites →https://doi.org/10.1109/led.2018.2862158openalex-snapshot

A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

inferredcites →https://doi.org/10.1109/led.2019.2903578openalex-snapshot

Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3as Gate Insulator

inferredcites →https://doi.org/10.1109/mwsym.2018.8439521openalex-snapshot

Diamond RF Transistor Technology with ft=41 GHz and fmax=44 GHz

inferredcites →https://doi.org/10.1109/ted.2015.2392798openalex-snapshot

RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study

inferredcites →https://doi.org/10.1109/ted.2016.2617362openalex-snapshot

V2O5MISFETs on H-Terminated Diamond

inferredcites →https://doi.org/10.1557/adv.2017.141openalex-snapshot

Charge Trapping Analysis of High Speed Diamond FETs

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Dft Study of Structural and Electronic Properties of Diamond (100) Surface as a Function of Surface Coverage of Atmospheric Functional Groups

inferred← citeshttps://doi.org/10.1002/adfm.202408536openalex-snapshot

Electronic Band Offset in a Diamond|cBN|Diamond System for Modulation Doping

inferred← citeshttps://doi.org/10.1002/adma.202101589openalex-snapshot

Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride

inferred← citeshttps://doi.org/10.1002/adma.202207774openalex-snapshot

Emerging 2D Metal Oxides: From Synthesis to Device Integration

inferred← citeshttps://doi.org/10.1002/aelm.202400770openalex-snapshot

Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current

inferred← citeshttps://doi.org/10.1007/s12613-021-2358-3openalex-snapshot

Carbon materials: The burgeoning promise in electronics

inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.156245openalex-snapshot

Twist angle modulated electronic properties and band alignments of hydrogen-terminated diamond (1 1 1)/hexagonal boron nitride heterostructures

inferred← citeshttps://doi.org/10.1016/j.carbon.2020.11.057openalex-snapshot

Oxidative etching mechanism of the diamond (100) surface

inferred← citeshttps://doi.org/10.1016/j.cartre.2021.100033openalex-snapshot

Study of the structural phase transition in diamond (100) & (111) surfaces

inferred← citeshttps://doi.org/10.1016/j.diamond.2021.108597openalex-snapshot

A monolithic, back-gated diamond field-effect transistor for tunable color centers

inferred← citeshttps://doi.org/10.1016/j.jcis.2021.08.216openalex-snapshot

Construction of Schottky contact by modification with Pt particles to enhance the performance of ultra-long V2O5 nanobelt photodetectors

inferred← citeshttps://doi.org/10.1016/j.jmst.2024.04.030openalex-snapshot

Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending

inferred← citeshttps://doi.org/10.1016/j.progsurf.2021.100613openalex-snapshot

Surface transfer doping of diamond: A review

inferred← citeshttps://doi.org/10.1021/acs.nanolett.1c01557openalex-snapshot

Two-Dimensional Diamond—Diamane: Current State and Further Prospects

inferred← citeshttps://doi.org/10.1021/acsaelm.2c01306openalex-snapshot

3 nm Channel MoS2 Transistors by Electromigration of Metal Interconnection

inferred← citeshttps://doi.org/10.1038/s41524-025-01935-5openalex-snapshot

The properties, thermodynamics and application prospects of diamanes

inferred← citeshttps://doi.org/10.1063/5.0020620openalex-snapshot

Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures

inferred← citeshttps://doi.org/10.1063/5.0061948openalex-snapshot

Thermal performance of diamond field-effect transistors

inferred← citeshttps://doi.org/10.1063/5.0128490openalex-snapshot

Surface transfer doped diamond diodes with metal oxide passivation and field-plate

inferred← citeshttps://doi.org/10.1063/5.0282593openalex-snapshot

Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects

inferred← citeshttps://doi.org/10.1088/1361-6463/ac6d89openalex-snapshot

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

inferred← citeshttps://doi.org/10.1103/physrevapplied.20.034055openalex-snapshot

Carrier Transport in Cubic Boron Nitride: First-Principles and Semiempirical Models

inferred← citeshttps://doi.org/10.1109/mmm.2024.3428193openalex-snapshot

Ultrawide-Bandgap Semiconductors for High-Frequency Devices

inferred← citeshttps://doi.org/10.1109/ted.2020.3009174openalex-snapshot

Refractory W Ohmic Contacts to H-Terminated Diamond

inferred← citeshttps://doi.org/10.1109/ted.2022.3174047openalex-snapshot

Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond

inferred← citeshttps://doi.org/10.1109/ted.2023.3319283openalex-snapshot

Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric

inferred← citeshttps://doi.org/10.1109/ted.2025.3606423openalex-snapshot

High-Performance H-Diamond MOSFETs With HAO as Gate Dielectrics

inferred← citeshttps://doi.org/10.1557/s43578-021-00330-2openalex-snapshot

Ab initio study of the effect of 2D layer rippling on the electronic properties of 2D/H-terminated diamond (100) heterostructures

inferred← citeshttps://doi.org/10.1557/s43578-021-00396-yopenalex-snapshot

Neural network-based study of structural, chemical and electronic properties of doped $$\hbox {MoO}_{3}$$

inferred← citeshttps://doi.org/10.3390/ma15020446openalex-snapshot

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

inferred← citeshttps://doi.org/10.3390/ma19132791openalex-snapshot

Impact of Temperature and Interface Traps on Threshold Voltage and Carrier Mobility of Hydrogen-Terminated Diamond MOSFETs

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