On the public citation graph

Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices

https://doi.org/10.1109/ted.2022.3232309

0 signed · 65 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.

Claim with ORCID

Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.

See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/aelm.201600501openalex-snapshot

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

inferredcites →https://doi.org/10.1002/pssb.200301525openalex-snapshot

Optical properties of Si‐, Ge‐ and Sn‐doped GaN

inferredcites →https://doi.org/10.1002/pssc.201000964openalex-snapshot

Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

inferredcites →https://doi.org/10.1007/978-0-387-47314-7openalex-snapshot

Fundamentals of Power Semiconductor Devices

inferredcites →https://doi.org/10.1016/j.progsurf.2021.100613openalex-snapshot

Surface transfer doping of diamond: A review

inferredcites →https://doi.org/10.1016/j.sse.2005.03.006openalex-snapshot

An electron mobility model for wurtzite GaN

inferredcites →https://doi.org/10.1016/s0038-1098(03)00629-xopenalex-snapshot

Thermal conductivity of GaN crystals in 4.2–300 K range

inferredcites →https://doi.org/10.1038/s41928-022-00860-5openalex-snapshot

Multidimensional device architectures for efficient power electronics

inferredcites →https://doi.org/10.1063/1.3086397openalex-snapshot

High hole mobility in boron doped diamond for power device applications

inferredcites →https://doi.org/10.1063/1.4790134openalex-snapshot

Thermal conductivity of 4H-SiC single crystals

inferredcites →https://doi.org/10.1063/1.5109678openalex-snapshot

MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

inferredcites →https://doi.org/10.1063/1.5132818openalex-snapshot

High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

inferredcites →https://doi.org/10.1063/5.0061555openalex-snapshot

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

inferredcites →https://doi.org/10.1063/5.0078037openalex-snapshot

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

inferredcites →https://doi.org/10.1088/1361-6463/aac8aaopenalex-snapshot

Gallium nitride vertical power devices on foreign substrates: a review and outlook

inferredcites →https://doi.org/10.1088/1361-6641/abde17openalex-snapshot

GaN FinFETs and trigate devices for power and RF applications: review and perspective

inferredcites →https://doi.org/10.1103/physrevlett.70.3764openalex-snapshot

Thermal conductivity of isotopically modified single crystal diamond

inferredcites →https://doi.org/10.1103/physrevmaterials.4.044602openalex-snapshot

Experimental observation of high intrinsic thermal conductivity of AlN

inferredcites →https://doi.org/10.1109/ecce50734.2022.9948059openalex-snapshot

Electro-Thermal Device-Package Co-Design for Ultra-Wide Bandgap Gallium Oxide Power Devices

inferredcites →https://doi.org/10.1109/ests49166.2021.9512339openalex-snapshot

Packaging of an 8-kV Silicon Carbide Diode Module with Double-Side Cooling and Sintered-Silver Joints

inferredcites →https://doi.org/10.1109/iecon.2010.5674994openalex-snapshot

Comparison of the chip area usage of 2-level and 3-level voltage source converter topologies

inferredcites →https://doi.org/10.1109/iedm13553.2020.9372048openalex-snapshot

1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

inferredcites →https://doi.org/10.1109/jestpe.2019.2947645openalex-snapshot

Review of Packaging Schemes for Power Module

inferredcites →https://doi.org/10.1109/led.2004.826533openalex-snapshot

New Unipolar Switching Power Device Figures of Merit

inferredcites →https://doi.org/10.1109/led.2018.2880306openalex-snapshot

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

inferredcites →https://doi.org/10.1109/led.2020.2987282openalex-snapshot

Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC

inferredcites →https://doi.org/10.1109/led.2021.3089035openalex-snapshot

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

inferredcites →https://doi.org/10.1109/ted.2013.2261072openalex-snapshot

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

inferredcites →https://doi.org/10.1109/ted.2016.2532602openalex-snapshot

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

inferredcites →https://doi.org/10.1109/ted.2020.3002880openalex-snapshot

(Ultra)Wide-Bandgap Vertical Power FinFETs

inferredcites →https://doi.org/10.1109/tie.2017.2703910openalex-snapshot

A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications

inferredcites →https://doi.org/10.1109/tpel.2008.2006567openalex-snapshot

New Physical Insights on Power MOSFET Switching Losses

inferredcites →https://doi.org/10.1109/tpel.2016.2574998openalex-snapshot

ZVS of Power MOSFETs Revisited

inferredcites →https://doi.org/10.1109/tpel.2019.2952633openalex-snapshot

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

inferredcites →https://doi.org/10.1109/tpel.2020.2993639openalex-snapshot

A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances

inferredcites →https://doi.org/10.1109/tpel.2021.3049966openalex-snapshot

Packaged Ga 2 O 3 Schottky Rectifiers With Over 60-A Surge Current Capability

inferredcites →https://doi.org/10.1109/tpel.2021.3070326openalex-snapshot

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

inferredcites →https://doi.org/10.1109/tpel.2021.3138451openalex-snapshot

Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

inferredcites →https://doi.org/10.1557/s43578-021-00465-2openalex-snapshot

Analysis of the dependence of critical electric field on semiconductor bandgap

inferredcites →https://doi.org/10.4236/jectc.2014.41001openalex-snapshot

Two-Dimensional Numerical Investigation on Applicability of 45。Heat Spreading Angle

inferredcites →https://doi.org/10.7567/1347-4065/aae896openalex-snapshot

Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4858468openalex-extracted

A Review of Techniques for Effective Thermal Management in Power Electronics

inferred← citeshttps://doi.org/10.1007/s10854-025-16320-7openalex-snapshot

Processing optimization and interfacial peeling strength of the AMB Cu‐metalized Si3N4 substrates

inferred← citeshttps://doi.org/10.1016/bs.aiht.2023.05.004openalex-snapshot

Near-junction thermal managements of electronics

inferred← citeshttps://doi.org/10.1016/j.ijheatmasstransfer.2023.124284openalex-snapshot

Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method

inferred← citeshttps://doi.org/10.1016/j.ijhydene.2026.155277openalex-snapshot

Performance analysis of a wide bandgap bidirectional non-isolated and wide conversion ratio DC-DC converter with for V2G and G2V applications in fuel cell-battery hydrogen-electric vehicles

inferred← citeshttps://doi.org/10.1021/acsami.4c06055openalex-snapshot

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties

inferred← citeshttps://doi.org/10.1063/5.0222105openalex-snapshot

Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective

inferred← citeshttps://doi.org/10.1063/5.0278883openalex-snapshot

The renaissance of lateral power devices for high voltage applications

inferred← citeshttps://doi.org/10.1063/5.0295152openalex-snapshot

Optimal layer thickness and junction temperature of GaN HEMTs based on bias-dependent non-uniform heat source model

inferred← citeshttps://doi.org/10.1088/1361-6463/acb4ffopenalex-snapshot

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

inferred← citeshttps://doi.org/10.1088/1361-6463/ad8759openalex-snapshot

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

inferred← citeshttps://doi.org/10.1109/ecce58356.2025.11260046openalex-snapshot

Wide Bandgap Power Semiconductors Evaluations Based on Operating Condition Figure of Merits

inferred← citeshttps://doi.org/10.1109/estc60143.2024.10712111openalex-snapshot

The Potential of Machine Learning for Thermal Modelling of SiC Power Modules - A Review

inferred← citeshttps://doi.org/10.1109/jeds.2025.3538769openalex-snapshot

Trap Analysis of Normally-Off Ga₂O₃ MOSFET Enabled by Charge Trapping Layer: Photon Stimulated Characterization and TDDB

inferred← citeshttps://doi.org/10.1109/led.2024.3416995openalex-snapshot

Ultrathin-Body GaN-on-Sapphire HEMT With Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 1010 rad(Si)/s

inferred← citeshttps://doi.org/10.1109/tcpmt.2024.3381090openalex-snapshot

Package Design and Analysis of a 20-kV Double-Sided Silicon Carbide Diode Module With Polymer Nanocomposite Field-Grading Coating

inferred← citeshttps://doi.org/10.1109/ted.2024.3474614openalex-snapshot

Analytical Determination of Majority Carrier Diode Losses in Power Switching and Perspective for Ultrawide Bandgap Semiconductors

inferred← citeshttps://doi.org/10.1109/ted.2026.3714364openalex-snapshot

Investigations on Surge Current Capability and Failure Mechanism of SiC MOSFETs in Third Quadrant

inferred← citeshttps://doi.org/10.1109/tpel.2026.3675006openalex-snapshot

Plenty of Room at the Bottom and Top: Future Perspectives on GaN Power Devices and Applications

inferred← citeshttps://doi.org/10.1109/wipda58524.2023.10382197openalex-snapshot

Packaging of 15-kV Silicon Carbide Half-Bridge Module Enabled by a Nonlinear Resistive Polymer Nanocomposite Field-Grading Coating

inferred← citeshttps://doi.org/10.1116/6.0002722openalex-snapshot

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

inferred← citeshttps://doi.org/10.1149/2162-8777/ad3457openalex-snapshot

Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Heterojunction Rectifiers

inferred← citeshttps://doi.org/10.3390/cryst13060917openalex-snapshot

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

inferred← citeshttps://doi.org/10.3390/thermo5030030openalex-snapshot

Enhancing Thermal Efficiency in Power Electronics: A Review of Advanced Materials and Cooling Methods

Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.