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Metal configurations on 2D materials investigated via atomic resolution HAADF stem

https://doi.org/10.1111/jmi.12902
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.optcom.2017.06.012openalex-snapshot
Optical contrast for identifying the thickness of two-dimensional materials
inferredcites →https://doi.org/10.1016/j.ultramic.2016.12.011openalex-snapshot
Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy
inferredcites →https://doi.org/10.1021/acsami.5b02782openalex-snapshot
Comparative Study on Electronic Structures of Sc and Ti Contacts with Monolayer and Multilayer MoS2
inferredcites →https://doi.org/10.1021/acsnano.5b05305openalex-snapshot
Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping
inferredcites →https://doi.org/10.1021/jz201653gopenalex-snapshot
Interaction of Metals with Suspended Graphene Observed by Transmission Electron Microscopy
inferredcites →https://doi.org/10.1021/nl103980hopenalex-snapshot
Metal−Graphene Interaction Studied via Atomic Resolution Scanning Transmission Electron Microscopy
inferredcites →https://doi.org/10.1021/nn300452yopenalex-snapshot
Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene
inferredcites →https://doi.org/10.1021/nn4047474openalex-snapshot
Rapid and Reliable Thickness Identification of Two-Dimensional Nanosheets Using Optical Microscopy
inferredcites →https://doi.org/10.1021/nn502776hopenalex-snapshot
Monolayer MoS2 Heterojunction Solar Cells
inferredcites →https://doi.org/10.1038/nature12385openalex-snapshot
Van der Waals heterostructures
inferredcites →https://doi.org/10.1038/nnano.2010.172openalex-snapshot
Boron nitride substrates for high-quality graphene electronics
inferredcites →https://doi.org/10.1038/nnano.2010.279openalex-snapshot
Single-layer MoS2 transistors
inferredcites →https://doi.org/10.1038/nnano.2012.193openalex-snapshot
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
inferredcites →https://doi.org/10.1038/nphoton.2010.186openalex-snapshot
Graphene photonics and optoelectronics
inferredcites →https://doi.org/10.1038/s41565-018-0082-6openalex-snapshot
Quantum engineering of transistors based on 2D materials heterostructures
inferredcites →https://doi.org/10.1038/s41699-018-0050-xopenalex-snapshot
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk
inferredcites →https://doi.org/10.1038/s41699-018-0059-1openalex-snapshot
Tunable phase stability and contact resistance of monolayer transition metal dichalcogenides contacts with metal
inferredcites →https://doi.org/10.1039/c3nr06072aopenalex-snapshot
MoS 2 /MX 2 heterobilayers: bandgap engineering via tensile strain or external electrical field
inferredcites →https://doi.org/10.1039/c4ta00652fopenalex-snapshot
Layered transition metal dichalcogenides for electrochemical energy generation and storage
inferredcites →https://doi.org/10.1039/c5qi00251fopenalex-snapshot
Two-dimensional layered nanomaterials for gas-sensing applications
inferredcites →https://doi.org/10.1063/1.4768218openalex-snapshot
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
inferredcites →https://doi.org/10.1063/1.4817409openalex-snapshot
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
inferredcites →https://doi.org/10.1063/1.4866340openalex-snapshot
High-performance MoS2 transistors with low-resistance molybdenum contacts
inferredcites →https://doi.org/10.1063/1.4903358openalex-snapshot
Single-layer MoSe2 based NH3 gas sensor
inferredcites →https://doi.org/10.1088/1361-6528/aab4bbopenalex-snapshot
Highly sensitive MoS 2 photodetectors with graphene contacts
inferredcites →https://doi.org/10.1088/2053-1583/2/3/031001openalex-snapshot
Transfer of an exfoliated monolayer graphene flake onto an optical fiber end face for erbium-doped fiber laser mode-locking
inferredcites →https://doi.org/10.1103/physrevb.8.3719openalex-snapshot
Band Structures of Transition-Metal-Dichalcogenide Layer Compounds
inferredcites →https://doi.org/10.1103/physrevb.85.045440openalex-snapshot
Nanoscale electron diffraction and plasmon spectroscopy of single- and few-layer boron nitride
inferredcites →https://doi.org/10.1103/physrevb.96.205423openalex-snapshot
Nature of carrier injection in metal/2D-semiconductor interface and its implications for the limits of contact resistance
inferredcites →https://doi.org/10.1103/physrevlett.105.136805openalex-snapshot
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
inferredcites →https://doi.org/10.1109/iedm.2009.5424297openalex-snapshot
Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance
inferredcites →https://doi.org/10.1109/led.2011.2155024openalex-snapshot
Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance
inferredcites →https://doi.org/10.1126/science.1102896openalex-snapshot
Electric Field Effect in Atomically Thin Carbon Films
inferredcites →https://doi.org/10.1126/science.aab3175openalex-snapshot
Phase patterning for ohmic homojunction contact in MoTe 2
inferredcites →https://doi.org/10.1146/annurev-matsci-070214-021034openalex-snapshot
Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
inferredcites →https://doi.org/10.3938/jkps.71.92openalex-snapshot
A transistor based on 2D material and silicon junction

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4744018openalex-extracted
Crystal Structure and Shape Selection in the Growth of 3d Metallic Clusters on Layered Materials: Fe on Mos2
inferred← citeshttps://doi.org/10.1016/j.susc.2024.122522openalex-snapshot
Crystal structure and shape selection in the growth of 3D metallic crystallites on layered materials: Fe on MoS2
inferred← citeshttps://doi.org/10.1088/1361-6528/abb04aopenalex-snapshot
Fabrication of field-effect transistors with transfer-free nanostructured carbon as the semiconducting channel material
inferred← citeshttps://doi.org/10.1111/jmi.12941openalex-snapshot
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