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A Density Functional Theory Investigation on Electronic Properties and Geometries Of Selfassembled (Inp)12n (N=1-12) Nanowires and Nanosheets: High-Efficient Solar Energy Material

https://doi.org/10.2139/ssrn.4644527
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Brittle‐to‐ductile transition temperature in InP
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Optical properties of III-V semiconductors : the influence of multi-valley band structures
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Structures and properties of [Ag(Ag2S)n]+ clusters with n = 1–9: a density functional theory study
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A density functional theory computational investigation on geometries and electronic properties of the inner hollow (GaP)n (n = 1–38) nanomaterials
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First-Principles Study of Structural, Electronic, Mechanical, Thermal, and Phonon Properties of III-Phosphides (BP, AlP, GaP, and InP)
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The influence of transition metal (Mn, Fe, Co, Cu) doping on the electronic and vibrational properties of indium nitride nanocage: A DFT study
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Probing the connection between cluster and bulk electronic structure of InP using vacuum ultraviolet anion photoelectron spectroscopy
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Evolution of the electronic structure and properties of neutral and charged aluminum phosphide clusters: A comprehensive analysis
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Sphere-like Eu12 and (EuX)12 (X=N,O, and S) clusters with ultrahigh magnetic moments
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Effect of surface functionalization on the moisture stability and sorption properties of porous boron nitride
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Comparative study of CO2 activation on alkali metals encapsulated III–V hollow nanocages: An insight from first-principles calculations
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Recent development in 2D materials beyond graphene
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Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy
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Lowest-energy structures and photoelectron spectra of In P (n= 1–12) clusters from density functional theory
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InP Nanowire Biosensor with Tailored Biofunctionalization: Ultrasensitive and Highly Selective Disease Biomarker Detection
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Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires
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Synthesis and Magnetic Properties of Manganese-Doped GaP Nanowires
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Electric Dipole (Hyper)polarizabilities of Selected X2Y2 and X3Y3 (X = Al, Ga, In and Y = P, As): III−V Semiconductor Clusters. An ab Initio Comparative Study
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Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
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Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys
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Ab initio effective core potentials for molecular calculations. Potentials for K to Au including the outermost core orbitals
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High performance photodetectors based on high quality InP nanowires
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Generalized Gradient Approximation Made Simple
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Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
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Electrochemical Formation and Microstructure of Porous Gallium Phosphide
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Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances
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Exploration on Electronic Properties of Self-Assembled Indium Nitrogen Nanosheets and Nanowires by a Density Functional Method
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Control of the spontaneous formation of oxide overlayers on GaP nanowires grown by physical vapor deposition
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