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In-Depth Investigation of Emission Homogeneity of Ingaas Multiple Quantum Wells Using Spatially Resolved Spectroscopy

https://doi.org/10.2139/ssrn.4813221
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/s00340-006-2499-0openalex-extracted
Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling
inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.08.044openalex-extracted
Strain compensated 1120nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1016/s1631-0705(03)00097-5openalex-extracted
Laser diode reliability: crystal defects and degradation modes
inferredcites →https://doi.org/10.1049/el.2012.0531openalex-extracted
106 W continuous-wave output power from vertical-external-cavity surface-emitting laser
inferredcites →https://doi.org/10.1049/el:20040049openalex-extracted
0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm
inferredcites →https://doi.org/10.1063/1.103005openalex-extracted
Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures
inferredcites →https://doi.org/10.1063/1.107835openalex-extracted
Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
inferredcites →https://doi.org/10.1063/1.111111openalex-extracted
Design criteria for structurally stable, highly strained multiple quantum well devices
inferredcites →https://doi.org/10.1063/1.1496121openalex-extracted
Formation of misfit dislocations in GaAs/InGaAs multiquantum wells observed by photoluminescence microscopy
inferredcites →https://doi.org/10.1063/1.2907508openalex-extracted
Indium distribution at the interfaces of (Ga,In)(N,As)∕GaAs quantum wells
inferredcites →https://doi.org/10.1063/1.340059openalex-extracted
Structure and recombination in InGaAs/GaAs heterostructures
inferredcites →https://doi.org/10.1063/1.363574openalex-extracted
Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p–i–n diodes
inferredcites →https://doi.org/10.1070/qe2008v038n12abeh013965openalex-extracted
Power scalable semiconductor disk lasers for frequency conversion and mode-locking
inferredcites →https://doi.org/10.1080/01418619208205592openalex-extracted
The study of misfit dislocations in InxGa1-xAs/GaAs strained quantum well structures
inferredcites →https://doi.org/10.1088/1367-2630/11/12/125019openalex-extracted
High-power disk lasers based on dilute nitride heterostructures
inferredcites →https://doi.org/10.1103/physrevb.46.15290openalex-extracted
Photoreflectance and piezophotoreflectance studies of strained-layer Inx Ga1−x As-GaAs quantum wells
inferredcites →https://doi.org/10.1109/cleo.2007.4452727openalex-extracted
Power Scalable Semiconductor Disk Laser Using Multiple Gain Cavity
inferredcites →https://doi.org/10.1109/jqe.2002.802111openalex-extracted
High-power passively mode-locked semiconductor lasers
inferredcites →https://doi.org/10.1109/jstqe.2015.2415200openalex-extracted
Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm
inferredcites →https://doi.org/10.1117/12.2014757openalex-extracted
VECSELs emitting at 976nm designed for second harmonic generation in the blue wavelength region
inferredcites →https://doi.org/10.1117/12.710243openalex-extracted
Power-scaling of optically pumped semiconductor lasers
inferredcites →https://doi.org/10.1364/oe.14.012868openalex-extracted
Power scalable semiconductor disk laser using multiple gain cavity
inferredcites →https://doi.org/10.1364/oe.18.025633openalex-extracted
11 W single gain-chip dilute nitride disk laser emitting around 1180 nm
inferredcites →https://doi.org/10.1364/oe.473676openalex-extracted
Intra-cavity frequency-doubled VECSEL system for narrow linewidth Rydberg EIT spectroscopy
inferredcites →https://doi.org/10.1364/ol.31.003612openalex-extracted
Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme
inferredcites →https://doi.org/10.26226/m.6275705f66d5dcf63a31174eopenalex-extracted
Intra-Cavity Frequency-Doubled VECSEL System for Narrow Linewidth Rydberg EIT Spectroscopy

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.1063/5.0234853openalex-snapshot
Internal quantum efficiency of GaAsBi MQW structure for the active region of VECSELs
inferred← citeshttps://doi.org/10.3952/physics.2024.64.4.5openalex-snapshot
Optimization of AlGaAs barrier for InGaAs quantum wells emitting in the near infrared
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