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Analysis of Oxide Capacitance Changes Based on the Formation-Annihilation of Conducting Filament in Sio2/Si-Ncs/Sio2 Stack Layer-Based Mis-Like Capacitor

https://doi.org/10.2139/ssrn.4835530
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Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures
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Multilevel Nonvolatile Memristive and Memcapacitive Switching in Stacked Graphene Sheets
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Electrical conduction mechanisms of metal∕La2O3∕Si structure
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Resistive switching memory effect of ZrO2 films with Zr+ implanted
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Concurrent nonvolatile resistance and capacitance switching in LaAlO3
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Electrode dependence of filament formation in HfO2 resistive-switching memory
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Analog reversible nonvolatile memcapacitance in metal-oxide-semiconductor memcapacitor with ITO/HfOx/Si structure
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Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
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Electrically tailored resistance switching in silicon oxide
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Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film
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Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
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Memristor-The missing circuit element
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Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching
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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
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