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High On/Off Ratio Zns-Based Reram with Multi-Level Switching

https://doi.org/10.2139/ssrn.5082062

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.201503522openalex-snapshot

Role and Optimization of the Active Oxide Layer in TiO2‐Based RRAM

inferredcites →https://doi.org/10.1016/j.apcatb.2017.09.006openalex-snapshot

Zinc vacancy-promoted photocatalytic activity and photostability of ZnS for efficient visible-light-driven hydrogen evolution

inferredcites →https://doi.org/10.1016/j.apsusc.2022.154698openalex-snapshot

Robust resistive switching in MoS2-based memristor with Ti top electrode

inferredcites →https://doi.org/10.1016/j.cap.2021.02.009openalex-snapshot

Fabrication of solution-processed SnO2–Based flexible ReRAM using laser-induced graphene transferred onto PDMS

inferredcites →https://doi.org/10.1016/j.jallcom.2022.164569openalex-snapshot

Metal nanoparticles layer boosted resistive switching property in NiFe2O4-based memory devices

inferredcites →https://doi.org/10.1016/j.mee.2010.11.058openalex-snapshot

Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application

inferredcites →https://doi.org/10.1016/j.mssp.2019.104837openalex-snapshot

Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application

inferredcites →https://doi.org/10.1021/acs.chemmater.0c03755openalex-snapshot

Colloidal Manganese-Doped ZnS Nanoplatelets and Their Optical Properties

inferredcites →https://doi.org/10.1021/acsami.9b17160openalex-snapshot

Robust Ag/ZrO 2 /WS 2 /Pt Memristor for Neuromorphic Computing

inferredcites →https://doi.org/10.1038/ncomms1737openalex-snapshot

Observation of conducting filament growth in nanoscale resistive memories

inferredcites →https://doi.org/10.1088/0268-1242/31/6/063002openalex-snapshot

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

inferredcites →https://doi.org/10.1109/imw.2012.6213646openalex-snapshot

Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

inferredcites →https://doi.org/10.1186/1556-276x-8-418openalex-snapshot

TaO x -based resistive switching memories: prospective and challenges

inferredcites →https://doi.org/10.1186/1556-276x-9-381openalex-snapshot

Unipolar resistive switching of ZnO-single-wire memristors

inferredcites →https://doi.org/10.1186/s11671-020-03299-9openalex-snapshot

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

inferredcites →https://doi.org/10.1515/psr-2016-0010openalex-snapshot

Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory

inferredcites →https://doi.org/10.3390/nano10112159openalex-snapshot

Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

inferredcites →https://doi.org/10.3390/nano3030564openalex-snapshot

Hydrothermal Synthesis of Nanoclusters of ZnS Comprised on Nanowires

inferredcites →https://doi.org/10.35848/1347-4065/ad0cdeopenalex-snapshot

Cobalt sulfide films by sulfurizing cobalt for resistive switching memory

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