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Influence of Gese2 on the Phase Change Memory Properties of Ge2sb2te5 Films

https://doi.org/10.2139/ssrn.5120708
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Outgoing claims: the papers this work cites, builds on, or argues with.

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Optical Properties and Electronic Structure of Amorphous Germanium
inferredcites →https://doi.org/10.1002/pssb.201200618openalex-snapshot
Origin, secret, and application of the ideal phase‐change material GeSbTe
inferredcites →https://doi.org/10.1002/pssb.2220520229openalex-snapshot
The Raman Spectrum of Amorphous Tellurium
inferredcites →https://doi.org/10.1002/pssr.202200450openalex-snapshot
Multistep Crystallization of Ge‐Rich GST Unveiled by In Situ synchrotron X‐ray diffraction and (scanning) transmission electron microscopy
inferredcites →https://doi.org/10.1007/978-1-4684-8745-9_10openalex-snapshot
Localized States in the Gap of Amorphous Semiconductors
inferredcites →https://doi.org/10.1007/978-1-4684-8745-9_16openalex-snapshot
Threshold Switching in Chalcogenide-Glass Thin Films
inferredcites →https://doi.org/10.1016/0022-3093(85)90402-8openalex-snapshot
Chemical bond approach to the structures of chalcogenide glasses with reversible switching properties
inferredcites →https://doi.org/10.1016/0038-1098(85)90381-3openalex-snapshot
Constraint theory, vector percolation and glass formation
inferredcites →https://doi.org/10.1016/c2019-0-02600-3openalex-snapshot
Semiconductor Memories and Systems
inferredcites →https://doi.org/10.1016/j.jnoncrysol.2012.07.021openalex-snapshot
Signatures of Ge2Sb2Te5 film at structural transitions
inferredcites →https://doi.org/10.1016/j.jnoncrysol.2016.08.044openalex-snapshot
The mechanism of memory and threshold switching in (GeTe4)100−x(As2Se3)x glasses
inferredcites →https://doi.org/10.1016/j.jpcs.2007.02.027openalex-snapshot
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials
inferredcites →https://doi.org/10.1016/j.jpcs.2017.03.015openalex-snapshot
Electrical switching in Sb doped Al 23 Te 77 glasses
inferredcites →https://doi.org/10.1016/j.matchemphys.2012.08.024openalex-snapshot
Amorphous and crystallized Ge–Sb–Te thin films deposited by pulsed laser: Local structure using Raman scattering spectroscopy
inferredcites →https://doi.org/10.1016/j.materresbull.2015.01.016openalex-snapshot
Ni-doped GST materials for high speed phase change memory applications
inferredcites →https://doi.org/10.1016/j.matlet.2012.08.051openalex-snapshot
Structural evolution of Ge2Sb2Te5 films under the 488nm laser irradiation
inferredcites →https://doi.org/10.1016/j.mattod.2020.07.016openalex-snapshot
Unveiling the structural origin to control resistance drift in phase-change memory materials
inferredcites →https://doi.org/10.1021/acsaelm.4c00314openalex-snapshot
Peculiarities of Electrical Switching and Phase Transition Dynamics in Bismuth-Infused Se–Te Chalcogenide Glasses: From Bulk to Thin Film Devices
inferredcites →https://doi.org/10.1021/acsami.0c05811openalex-snapshot
Ultra-low Energy Phase Change Memory with Improved Thermal Stability by Tailoring the Local Structure through Ag Doping
inferredcites →https://doi.org/10.1021/am503502qopenalex-snapshot
Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application
inferredcites →https://doi.org/10.1038/nmat3456openalex-snapshot
Role of vacancies in metal–insulator transitions of crystalline phase-change materials
inferredcites →https://doi.org/10.1038/s41578-018-0076-xopenalex-snapshot
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
inferredcites →https://doi.org/10.1038/s41598-017-06426-2openalex-snapshot
Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film
inferredcites →https://doi.org/10.1038/s42004-019-0114-7openalex-snapshot
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5
inferredcites →https://doi.org/10.1039/c4ra11504jopenalex-snapshot
Titanium-induced structure modification for thermal stability enhancement of a GeTeTi phase change material
inferredcites →https://doi.org/10.1039/c8nr07832gopenalex-snapshot
Electrical switching properties and structural characteristics of GeSe–GeTe films
inferredcites →https://doi.org/10.1039/c9tc02302jopenalex-snapshot
Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys
inferredcites →https://doi.org/10.1063/1.1314323openalex-snapshot
Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
inferredcites →https://doi.org/10.1063/1.3168551openalex-snapshot
Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films
inferredcites →https://doi.org/10.1063/1.328036openalex-snapshot
Threshold switching in chalcogenide-glass thin films
inferredcites →https://doi.org/10.1063/1.4757137openalex-snapshot
Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
inferredcites →https://doi.org/10.1063/1.4865198openalex-snapshot
Direct hexagonal transition of amorphous (Ge2Sb2Te5)0.9Se0.1 thin films
inferredcites →https://doi.org/10.1063/1.4971253openalex-snapshot
SET and RESET states of As2Se3 doped GeTe4 bulk glasses probed by Raman spectroscopy
inferredcites →https://doi.org/10.1080/02670836.2017.1341723openalex-snapshot
Materials science and engineering of phase change random access memory
inferredcites →https://doi.org/10.1080/14786437008221061openalex-snapshot
Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
inferredcites →https://doi.org/10.1088/0256-307x/23/1/050openalex-snapshot
Improvement of Electrical Properties of the Ge 2 Sb 2 Te 5 Film by Doping Si for Phase-Change Random Access Memory
inferredcites →https://doi.org/10.1088/1009-1963/13/11/033openalex-snapshot
Raman spectra and XPS studies of phase changes in Ge 2 Sb 2 Te 5 films
inferredcites →https://doi.org/10.1088/1361-6463/ab7794openalex-snapshot
An overview of phase-change memory device physics
inferredcites →https://doi.org/10.1088/1361-6463/ad5605openalex-snapshot
Reduction of write current with improved thermal stability in GeSe2 doped Sb2Te3 films for phase change memory applications
inferredcites →https://doi.org/10.1103/physrevb.54.4413openalex-snapshot
Evidence concerning the effect of topology on electrical switching in chalcogenide network glasses
inferredcites →https://doi.org/10.1103/physrevb.78.035308openalex-snapshot
Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
inferredcites →https://doi.org/10.1103/physrevlett.21.1450openalex-snapshot
Reversible Electrical Switching Phenomena in Disordered Structures
inferredcites →https://doi.org/10.1103/physrevlett.28.355openalex-snapshot
Bonding Bands, Lone-Pair Bands, and Impurity States in Chalcogenide Semiconductors
inferredcites →https://doi.org/10.1103/physrevlett.36.1469openalex-snapshot
Localized States in the Gap of Amorphous Semiconductors
inferredcites →https://doi.org/10.1109/iedm.2012.6479069openalex-snapshot
Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow
inferredcites →https://doi.org/10.1111/jace.19003openalex-snapshot
Glass transition, topology, and elastic models of Se‐based glasses
inferredcites →https://doi.org/10.1143/jjap.39.2775openalex-snapshot
Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5 Thin Film
inferredcites →https://doi.org/10.3390/app9030530openalex-snapshot
A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators
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