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Investigation of the Defect Generation and Effect on High Performance Amorphous Ga2o3 Thin Film Photodetector by Rf Sputtering Power Variation

https://doi.org/10.2139/ssrn.5149855
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Optoelectronic Diamond: Growth, Properties, and Photodetection Applications
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Instability of amorphous oxide semiconductors via carrier‐mediated structural transition between disorder and peroxide state
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Effect of sputtering power on surface topography of dc magnetron sputtered Ti thin films observed by AFM
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Surface plasma treatment reduces oxygen vacancies defects states to control photogenerated carriers transportation for enhanced self-powered deep UV photoelectric characteristics
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Effects of sputtering pressure and oxygen partial pressure on amorphous Ga2O3 film-based solar-blind ultraviolet photodetectors
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High-performance single crystalline UV photodetectors of β-Ga2O3
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Catalytic growth and characterization of single crystalline Zn doped p-type β-Ga2O3 nanowires
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High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector
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Performance improvement of amorphous Ga2O3 ultraviolet photodetector by annealing under oxygen atmosphere
inferredcites →https://doi.org/10.1016/j.matchemphys.2017.11.023openalex-snapshot
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
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Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector
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Highly flexible deep-ultraviolet photodetectors using amorphous gallium oxide thin films grown by atomic layer deposition
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A solar-blind photodetector based on β-Ga2O3 film deposited on MgO (100) substrates by RF magnetron sputtering
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Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga 2 O 3 Films through Plasma-Enhanced Technology
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How To Correctly Determine the Band Gap Energy of Modified Semiconductor Photocatalysts Based on UV–Vis Spectra
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Ultrathin Amorphous Gallium Oxide Vacuum Ultraviolet Photodetectors
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Enhanced Response Speed in 2D Perovskite Oxides-Based Photodetectors for UV Imaging through Surface/Interface Carrier-Transport Modulation
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Tunable Electrical and Optical Properties of Nickel Oxide (NiOx) Thin Films for Fully Transparent NiOx–Ga2O3 p–n Junction Diodes
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Solar-Blind Self-Powered Photodetector Using Solution-Processed Amorphous Core–Shell Gallium Oxide Nanoparticles
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Polycrystalline Ga2O3 Nanostructure-Based Thin Films for Fast-Response Solar-Blind Photodetectors
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Understanding and Countering Illumination-Sensitive Dark Current: Toward Organic Photodetectors with Reliable High Detectivity
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Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga 2 O 3 -Based Heterojunction
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p -GaSe/ n -Ga 2 O 3 van der Waals Heterostructure Photodetector at Solar-Blind Wavelengths with Ultrahigh Responsivity and Detectivity
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Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide
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High-Responsivity Deep-Ultraviolet-Selective Photodetectors Using Ultrathin Gallium Oxide Films
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Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
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A high responsivity and controllable recovery ultraviolet detector based on a WO 3 gate AlGaN/GaN heterostructure with an integrated micro-heater
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Quenching of persistent photocurrent in an oxide UV photodetector
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Regulation of oxygen vacancies in nitrogen-doped Ga 2 O 3 films for high-performance MSM solar-blind UV photodetectors
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Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
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Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection
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The road ahead for ultrawide bandgap solar-blind UV photodetectors
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Fast-Response Amorphous Ga₂O₃ Solar-Blind Ultraviolet Photodetectors Tuned by a Polar AlN Template
inferredcites →https://doi.org/10.1364/oe.23.028300openalex-snapshot
Development of solar-blind photodetectors based on Si-implanted β-Ga_2O_3
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Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer
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Influence of oxygen vacancy and metal–semiconductor contact on the device performance of amorphous gallium oxide photodetectors
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