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Linearity Enhancement of Double-Channel InAlN/GaN HEMTs by Multi-Threshold-Voltage Engineering with Tri-Gate Control

https://doi.org/10.2139/ssrn.6929405
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.5051685openalex-snapshot
High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels
inferredcites →https://doi.org/10.1063/5.0058587openalex-snapshot
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
inferredcites →https://doi.org/10.1088/1361-6641/ad4a2eopenalex-snapshot
Impact of eliminating ungated access regions on DC and thermal performance of GaN-based MIS-HEMT
inferredcites →https://doi.org/10.1109/led.2005.850531openalex-snapshot
Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs
inferredcites →https://doi.org/10.1109/led.2013.2261913openalex-snapshot
Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$
inferredcites →https://doi.org/10.1109/led.2017.2687440openalex-snapshot
High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
inferredcites →https://doi.org/10.1109/led.2019.2951655openalex-snapshot
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation
inferredcites →https://doi.org/10.1109/led.2020.2980841openalex-snapshot
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
inferredcites →https://doi.org/10.1109/led.2020.3010810openalex-snapshot
GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage
inferredcites →https://doi.org/10.1109/led.2021.3087785openalex-snapshot
RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure
inferredcites →https://doi.org/10.1109/led.2022.3208121openalex-snapshot
Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation
inferredcites →https://doi.org/10.1109/led.2023.3241763openalex-snapshot
High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application
inferredcites →https://doi.org/10.1109/led.2023.3265058openalex-snapshot
High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications
inferredcites →https://doi.org/10.1109/led.2023.3317280openalex-snapshot
Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT
inferredcites →https://doi.org/10.1109/ted.2005.844791openalex-snapshot
AlGaN-GaN Double-Channel HEMTs
inferredcites →https://doi.org/10.1109/ted.2005.863767openalex-snapshot
Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs
inferredcites →https://doi.org/10.1109/ted.2021.3053221openalex-snapshot
AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity
inferredcites →https://doi.org/10.1109/ted.2021.3062561openalex-snapshot
Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs
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