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Polarization-resolved infrared spectroscopy of thermally induced surface modification in GaN/AlN/Si heterostructures

https://doi.org/10.2139/ssrn.7396860
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inferredcites →https://doi.org/10.1016/j.diamond.2005.11.014openalex-snapshot
Temperature dependence of Raman-active modes in AlN
inferredcites →https://doi.org/10.1016/j.diamond.2005.12.034openalex-snapshot
Phonon dynamics in AlN lattice contaminated by oxygen
inferredcites →https://doi.org/10.1016/j.diamond.2011.11.009openalex-snapshot
Infrared analysis of the effect of Ge at the interface between 3C–SiC and Si
inferredcites →https://doi.org/10.1016/j.fmre.2021.11.028openalex-snapshot
A review on the GaN-on-Si power electronic devices
inferredcites →https://doi.org/10.1016/j.infrared.2022.104519openalex-snapshot
Tuning the infrared dielectric and plasmonic properties of ZnO thin films on glass
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.01.011openalex-snapshot
What causes rough surface in AlN crystal growth?
inferredcites →https://doi.org/10.1016/j.optlaseng.2024.108215openalex-snapshot
Depth-resolved stress field measurement of multilayered system using swept-source polarization-sensitive optical coherence tomography
inferredcites →https://doi.org/10.1021/acs.cgd.3c01023openalex-snapshot
Reshaping of 3D GaN Structures during Annealing: Phenomenological Description and Mathematical Model
inferredcites →https://doi.org/10.1038/nnano.2015.305openalex-snapshot
Atomic-scale photonic hybrids for mid-infrared and terahertz nanophotonics
inferredcites →https://doi.org/10.1063/1.2137461openalex-snapshot
Oxygen behavior in aluminum nitride
inferredcites →https://doi.org/10.1063/1.2209557openalex-snapshot
Zone center optical phonons in AlxGa1−xN mixed crystals
inferredcites →https://doi.org/10.1063/1.2912819openalex-snapshot
Temperature and doping dependence of phonon lifetimes and decay pathways in GaN
inferredcites →https://doi.org/10.1063/1.369623openalex-snapshot
Infrared and transmission electron microscopy studies of ion-implanted H in GaN
inferredcites →https://doi.org/10.1063/1.4817172openalex-snapshot
Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1−xN films using infrared spectroscopy
inferredcites →https://doi.org/10.1063/1.5067244openalex-snapshot
Modulating near-field heat transfer using oxygen-contaminated piezoelectric aluminum nitride nanomaterials
inferredcites →https://doi.org/10.1063/1.555624openalex-snapshot
Refractive index of silicon and germanium and its wavelength and temperature derivatives
inferredcites →https://doi.org/10.1063/5.0061354openalex-snapshot
GaN-based power devices: Physics, reliability, and perspectives
inferredcites →https://doi.org/10.1088/1361-6641/acb9b6openalex-snapshot
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD
inferredcites →https://doi.org/10.1090/s0025-5718-69-99647-1openalex-snapshot
Calculation of Gauss Quadrature Rules
inferredcites →https://doi.org/10.1103/physrevb.38.5438openalex-snapshot
Polaritons in semiconductor multilayered materials
inferredcites →https://doi.org/10.1103/physrevb.61.6091openalex-snapshot
Phonons in ternary group-III nitride alloys
inferredcites →https://doi.org/10.1103/physrevb.62.7365openalex-snapshot
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
inferredcites →https://doi.org/10.1149/08607.0233ecstopenalex-snapshot
(Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs
inferredcites →https://doi.org/10.1364/josa.62.000502openalex-snapshot
Optics in Stratified and Anisotropic Media: 4×4-Matrix Formulation
inferredcites →https://doi.org/10.1515/nanoph-2014-0003openalex-snapshot
Low‐loss, infrared and terahertz nanophotonics using surface phonon polaritons
inferredcites →https://doi.org/10.30941/cestems.2019.00008openalex-snapshot
A review of gallium nitride power device and its applications in motor drive
inferredcites →https://doi.org/10.3390/mi13122133openalex-snapshot
Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
inferredcites →https://doi.org/10.3390/mi14112045openalex-snapshot
Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices
inferredcites →https://doi.org/10.3390/mi14112076openalex-snapshot
Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
inferredcites →https://doi.org/10.54254/2755-2721/65/20240468openalex-snapshot
Advancements and future prospects of Gallium Nitride (GaN) in semiconductor technology
inferredcites →https://doi.org/10.70322/htm.2025.10020openalex-snapshot
Review of Gallium Nitride Devices and Integrated Circuits at High Temperatures
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