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Physics of semiconductor devices

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Responsivity Characteristics of Zno Schottky Ultraviolet Photodetectors with High Gain
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Nb2O5/SnO2Heterojunctions Designed as Optical Absorbers and Microwave Band Filters
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Excess Carrier Phenomenon in Semiconductors
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Active Diamond Electronic Devices
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Dynamics of Free Carriers in Diamond
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Semiconductor p-n Junction Devices
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Diamond: Potential and Status
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Recent Advances in Microfabrication
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Special-Purpose SOI
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P—N Junction
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Metal—Semiconductor Field-Effect Transistors
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Heterojunction Bipolar Transistors
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Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits
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TETHYS: A Simulation Tool for Graphene Hydrodynamic Models
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Nonlinear Waves
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Metal–Semiconductor Junctions and Semiconductor Heterostructures
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Resolution and Performance of 3D Confocal Raman Imaging Systems
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Nanoscale Transport Imaging of Active Lateral Devices: Static and Frequency Dependent Modes
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Resonant Tunneling Heterostructure Devices – Dependencies on Thickness and Number of Quantum Wells
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Ultrasonic Nanowelding Technology Between Carbon Nanotubes and Metal Electrodes
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Power Device-Induced Oscillations and Electromagnetic Disturbances
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Optical Detectors
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Introduction
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Design of a CMOS Image Sensor
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Introduction
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Films with High Dielectric Constants: for Passive Capacitance
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Bipolar Transistors
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Carrier Diffusion Processes
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Photoconductivity
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Carrier Diffusion Processes
inferred← citeshttps://doi.org/10.1007/978-3-662-03159-9_10openalex-snapshot
Basic Principles of Light Emission in Semiconductors
inferred← citeshttps://doi.org/10.1007/978-3-662-09855-4_5openalex-snapshot
Carrier Diffusion Processes
inferred← citeshttps://doi.org/10.1007/978-3-662-70541-4_2openalex-snapshot
Der Halbleiter am Stück: Elektronen und Löcher
inferred← citeshttps://doi.org/10.1007/978-3-662-70541-4_6openalex-snapshot
Es werde Licht – ein bisschen Optoelektronik
inferred← citeshttps://doi.org/10.1007/978-3-7091-9247-4_2openalex-snapshot
Review of Basic Semiconductor and pn Junction Theory
inferred← citeshttps://doi.org/10.1007/978-81-322-2274-3_39openalex-snapshot
Analysis of Ambipolar Intrinsic Resistance of PIN Diode for Different Semiconductors Suitable for Power Devices
inferred← citeshttps://doi.org/10.1007/978-94-009-1571-8_2openalex-snapshot
Integrated optic sensors
inferred← citeshttps://doi.org/10.1007/978-94-009-1746-0_22openalex-snapshot
Field Effect Transistor as Electronic Flute
inferred← citeshttps://doi.org/10.1007/978-94-009-2907-4_2openalex-snapshot
Basic Laser Characteristics
inferred← citeshttps://doi.org/10.1007/978-94-017-2484-5_6openalex-snapshot
Integrated optic sensors
inferred← citeshttps://doi.org/10.1007/b98730_11openalex-snapshot
Basic Principles of Light Emission in Semiconductors
inferred← citeshttps://doi.org/10.1007/bf00626417openalex-snapshot
Growth of Ni2Si by rapid thermal annealing: Kinetics and moving species
inferred← citeshttps://doi.org/10.1007/bf02471241openalex-snapshot
Example of an exact solution of the problem of the distribution of an ionized impurity in the surface region of a semiconductor
inferred← citeshttps://doi.org/10.1007/bf02508633openalex-snapshot
Investigation of Si<B, S≥and Si
inferred← citeshttps://doi.org/10.1007/bf02666636openalex-snapshot
Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN
inferred← citeshttps://doi.org/10.1007/bf02769932openalex-snapshot
Dynamics of stochastically induced and spatially inhomogeneous impurity breakdown in semiconductors
inferred← citeshttps://doi.org/10.1007/bf03549264openalex-snapshot
Analysis of Thin Film Optical Filters Using Transmission Line Models
inferred← citeshttps://doi.org/10.1007/bfb0107800openalex-snapshot
Band offsets in heterostructures
inferred← citeshttps://doi.org/10.1007/bfb0108626openalex-snapshot
Carrier relaxation in semiconductors with multiple inequivalent valleys
inferred← citeshttps://doi.org/10.1007/s00161-008-0070-4openalex-snapshot
Maximum-entropy principle for nonlinear hydrodynamic transport in semiconductors
inferred← citeshttps://doi.org/10.1007/s00339-007-4038-1openalex-snapshot
Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors
inferred← citeshttps://doi.org/10.1007/s00339-008-5008-yopenalex-snapshot
Subthreshold regime in rubrene single-crystal organic transistors
inferred← citeshttps://doi.org/10.1007/s00339-017-0938-xopenalex-snapshot
Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices
inferred← citeshttps://doi.org/10.1007/s00339-022-05453-9openalex-snapshot
Glucose oxidase immobilized macro porous silicon based conductive glucose sensor
inferred← citeshttps://doi.org/10.1007/s00339-023-06432-4openalex-snapshot
Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications
inferred← citeshttps://doi.org/10.1007/s00339-024-07889-7openalex-snapshot
High power deep ultraviolet radiation generation from short pulse laser induced electron–hole pair production in a wide bandgap semiconductor
inferred← citeshttps://doi.org/10.1007/s10008-018-4077-xopenalex-snapshot
Poly(o-phenylenediamine) thin film for organic solar cell applications
inferred← citeshttps://doi.org/10.1007/s10470-012-9872-1openalex-snapshot
An improved compact model for CMOS cross-shaped Hall-effect sensor including offset and temperature effects
inferred← citeshttps://doi.org/10.1007/s10527-010-9155-zopenalex-snapshot
Automated Biomedical Systems for Rapid Temperature Diagnosis
inferred← citeshttps://doi.org/10.1007/s10853-010-5020-4openalex-snapshot
Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process
inferred← citeshttps://doi.org/10.1007/s10854-006-5624-2openalex-snapshot
Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
inferred← citeshttps://doi.org/10.1007/s10854-014-2226-2openalex-snapshot
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review
inferred← citeshttps://doi.org/10.1007/s10854-015-3055-7openalex-snapshot
A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review
inferred← citeshttps://doi.org/10.1007/s10854-016-4426-4openalex-snapshot
Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators
inferred← citeshttps://doi.org/10.1007/s10854-016-4913-7openalex-snapshot
Significant G peak temperature shift in Raman spectra of graphene on copper
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