On the public citation graph
Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
0 signed · 189 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/9783527628438openalex-snapshot
Handbook of Nitride Semiconductors and Devices
inferredcites →https://doi.org/10.1002/adma.201102407openalex-snapshot
Flexible Inorganic Nanostructure Light‐Emitting Diodes Fabricated on Graphene Films
inferredcites →https://doi.org/10.1002/pssa.2210310121openalex-snapshot
GaAs, GaP, and GaAs1−xPx films deposited by molecular beam epitaxy
inferredcites →https://doi.org/10.1007/0-306-47126-4_7openalex-snapshot
Electronic Properties of Van Der Waals-Epitaxy Films and Interfaces
inferredcites →https://doi.org/10.1007/978-1-4684-4343-1_16openalex-snapshot
Nucleation and Growth of Thin Films
inferredcites →https://doi.org/10.1016/0022-0248(86)90342-8openalex-snapshot
Growth of high quality GaAs layers on Si substrates by MOCVD
inferredcites →https://doi.org/10.1016/0022-0248(94)00758-6openalex-snapshot
GaAs on Si(111) with a layered structure GaSe buffer layer
inferredcites →https://doi.org/10.1016/0022-3697(84)90043-xopenalex-snapshot
Some cohesive energy features of tetrahedral semiconductors
inferredcites →https://doi.org/10.1016/0167-9317(84)90057-1openalex-snapshot
Fabrication and characterization of heterostructures with subnanometer thickness
inferredcites →https://doi.org/10.1016/j.jcrysgro.2013.03.020openalex-snapshot
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
inferredcites →https://doi.org/10.1016/j.ssc.2007.03.052openalex-snapshot
Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects
inferredcites →https://doi.org/10.1021/la100231uopenalex-snapshot
Surface-Energy Engineering of Graphene
inferredcites →https://doi.org/10.1021/la901402fopenalex-snapshot
Wettability and Surface Free Energy of Graphene Films
inferredcites →https://doi.org/10.1021/nl202000uopenalex-snapshot
Stretchable, Transparent Graphene Interconnects for Arrays of Microscale Inorganic Light Emitting Diodes on Rubber Substrates
inferredcites →https://doi.org/10.1021/nl3018115openalex-snapshot
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
inferredcites →https://doi.org/10.1021/nl304569dopenalex-snapshot
InxGa1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
inferredcites →https://doi.org/10.1021/nn402954eopenalex-snapshot
Flexible and Transparent MoS 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
inferredcites →https://doi.org/10.1038/nature04166openalex-snapshot
Engineering atomic and molecular nanostructures at surfaces
inferredcites →https://doi.org/10.1038/nmat2635openalex-snapshot
Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
inferredcites →https://doi.org/10.1038/nmat2727openalex-snapshot
Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
inferredcites →https://doi.org/10.1038/nnano.2010.132openalex-snapshot
Roll-to-roll production of 30-inch graphene films for transparent electrodes
inferredcites →https://doi.org/10.1063/1.100174openalex-snapshot
Effect of post-growth annealing on patterned GaAs on silicon
inferredcites →https://doi.org/10.1063/1.1786677openalex-snapshot
Heteroepitaxial selective growth of InxGa1−xAs on SiO2-patterned GaAs(001) by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.341481openalex-snapshot
The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si
inferredcites →https://doi.org/10.1063/1.355038openalex-snapshot
Growth and characterization of GaSe and GaAs/GaSe on As-passivated Si(111) substrates
inferredcites →https://doi.org/10.1063/1.366511openalex-snapshot
Characterization of GaAs wire crystals grown on porous silicon by Raman scattering
inferredcites →https://doi.org/10.1063/1.4709732openalex-snapshot
Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer
inferredcites →https://doi.org/10.1063/1.94673openalex-snapshot
Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
inferredcites →https://doi.org/10.1063/1.98386openalex-snapshot
Formation of the interface between GaAs and Si: Implications for GaAs-on-Si heteroepitaxy
inferredcites →https://doi.org/10.1088/0957-4484/23/49/495306openalex-snapshot
Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2mask
inferredcites →https://doi.org/10.1103/physrevb.42.5544openalex-snapshot
Nonlinear equation for diffusion and adatom interactions during epitaxial growth on vicinal surfaces
inferredcites →https://doi.org/10.1103/physrevlett.110.156101openalex-snapshot
Surface Termination of Cleaved Bi2Se3 Investigated by Low Energy Ion Scattering
inferredcites →https://doi.org/10.1117/1.jnp.7.074599openalex-snapshot
Review of recent progress of III-nitride nanowire lasers
inferredcites →https://doi.org/10.1126/science.1137201openalex-snapshot
Room-Temperature Quantum Hall Effect in Graphene
inferredcites →https://doi.org/10.1126/science.1158877openalex-snapshot
Graphene: Status and Prospects
inferredcites →https://doi.org/10.1126/science.1195403openalex-snapshot
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
inferredcites →https://doi.org/10.1143/jjap.32.1126openalex-snapshot
A Low-Threshold 1.3 µm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser
inferredcites →https://doi.org/10.1143/jjap.32.l1126openalex-snapshot
Growth and Characterization of GaAs/GaSe/Si Heterostructures
inferredcites →https://doi.org/10.1557/jmr.1991.0376openalex-snapshot
Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices
inferredcites →https://doi.org/10.1557/proc-326-33openalex-snapshot
Growth and Characterization of Gase and GaAs/GaSe Hetero-Structures on As-Passivated Si Substrates
inferredcites →https://doi.org/10.2174/1874140100903010020openalex-snapshot
III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects
inferredcites →https://doi.org/10.3390/cryst3010079openalex-snapshot
Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4795110openalex-extracted
Impact of Graphene as 2d Interlayer on the Growth of Gaas by Csvt on Si (100) and Gaas (100) Substrates
inferred← citeshttps://doi.org/10.1002/9783527833887.ch2openalex-snapshot
The 2D Semiconductor Synthesis and Performances
inferred← citeshttps://doi.org/10.1002/9783527833887.ch4openalex-snapshot
The Mixed‐dimensional VdW Heterostructures
inferred← citeshttps://doi.org/10.1002/adfm.201705592openalex-snapshot
Growth and Luminescence of Polytypic InP on Epitaxial Graphene
inferred← citeshttps://doi.org/10.1002/adfm.202529607openalex-snapshot
Crystal Engineering Pathways Above, Below, and Between 2D Materials
inferred← citeshttps://doi.org/10.1002/adma.201604899openalex-snapshot
Graphene Substrate for van der Waals Epitaxy of Layer‐Structured Bismuth Antimony Telluride Thermoelectric Film
inferred← citeshttps://doi.org/10.1002/adma.201801608openalex-snapshot
High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer
inferred← citeshttps://doi.org/10.1002/adma.201806411openalex-snapshot
Graphene‐Based Mixed‐Dimensional van der Waals Heterostructures for Advanced Optoelectronics
inferred← citeshttps://doi.org/10.1002/adma.201807345openalex-snapshot
Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene
inferred← citeshttps://doi.org/10.1002/adma.202211075openalex-snapshot
Principles for 2D‐Material‐Assisted Nitrides Epitaxial Growth
inferred← citeshttps://doi.org/10.1002/adma.202517794openalex-snapshot
Epitaxy Beyond Periodic Lattices: Interfacial Modulation Enabled by Defect State 2D Materials
inferred← citeshttps://doi.org/10.1002/admi.201900821openalex-snapshot
Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth
inferred← citeshttps://doi.org/10.1002/admt.202300600openalex-snapshot
Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates
inferred← citeshttps://doi.org/10.1002/adom.201500526openalex-snapshot
Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes
inferred← citeshttps://doi.org/10.1002/adom.201901632openalex-snapshot
Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes
inferred← citeshttps://doi.org/10.1002/advs.202000917openalex-snapshot
Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
inferred← citeshttps://doi.org/10.1002/aenm.201602400openalex-snapshot
Progress in Tandem Solar Cells Based on Hybrid Organic–Inorganic Perovskites
inferred← citeshttps://doi.org/10.1002/ange.202007244openalex-snapshot
Synthesis of Honeycomb‐Structured Beryllium Oxide via Graphene Liquid Cells
inferred← citeshttps://doi.org/10.1002/anie.202007244openalex-snapshot
Synthesis of Honeycomb‐Structured Beryllium Oxide via Graphene Liquid Cells
inferred← citeshttps://doi.org/10.1002/pssb.201700275openalex-snapshot
Bi2Se3 van der Waals Virtual Substrates for II–VI Heterostructures
inferred← citeshttps://doi.org/10.1002/pssb.201800454openalex-snapshot
GaN‐Based Nanorods/Graphene Heterostructures for Optoelectronic Applications
inferred← citeshttps://doi.org/10.1002/pssb.202500262openalex-snapshot
Effect of Substrate Temperature on the Growth of InAs/Graphene Films
inferred← citeshttps://doi.org/10.1002/pssr.202300066openalex-snapshot
A Review of Intercalation of Rare Gas Solids on Graphene and Hexagonal Boron Nitride
inferred← citeshttps://doi.org/10.1002/smll.201502049openalex-snapshot
BN‐Enabled Epitaxy of Pb 1– x Sn x Se Nanoplates on SiO 2 /Si for High‐Performance Mid‐Infrared Detection
inferred← citeshttps://doi.org/10.1002/smll.201603269openalex-snapshot
Graphene–Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy
inferred← citeshttps://doi.org/10.1002/smll.202004437openalex-snapshot
Spontaneous Relaxation of Heteroepitaxial Thin Films by van der Waals‐Like Bonding on Te‐Terminated Sapphire Substrates
inferred← citeshttps://doi.org/10.1002/smll.202101890openalex-snapshot
In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy
inferred← citeshttps://doi.org/10.1002/smll.202202529openalex-snapshot
Continuous Single‐Crystalline GaN Film Grown on WS 2 ‐Glass Wafer
inferred← citeshttps://doi.org/10.1002/smll.202306038openalex-snapshot
Unraveling the Heterointegration of 3D Semiconductors on Graphene by Anchor Point Nucleation
inferred← citeshttps://doi.org/10.1002/smll.202513317openalex-snapshot
Wafer‐Scale (100)‐Oriented Te Single‐Crystalline Thin Films with Exceptional Electronic and Photodetection Performance
inferred← citeshttps://doi.org/10.1007/978-981-16-5505-0_5openalex-snapshot
Advanced Epitaxial Growth of LEDs on Van Der Waals Materials
inferred← citeshttps://doi.org/10.1007/978-981-95-3469-2_1openalex-snapshot
Two-Dimensional Materials and the Principles and Applications of Quasi van der Waals Epitaxy
inferred← citeshttps://doi.org/10.1007/978-981-95-3469-2_2openalex-snapshot
Theoretical Calculations of Quasi van der Waals Epitaxial Interfaces in Two-Dimensional Material-Based Nitrides
inferred← citeshttps://doi.org/10.1007/s00339-026-10070-xopenalex-snapshot
First-principles study of graphene/III-nitride (AlN, GaN, InN) heterostructures: structural, electronic, and thermoelectric properties
inferred← citeshttps://doi.org/10.1016/j.apsusc.2019.143616openalex-snapshot
The influence of 2D MoS2 layers on the growth of GaN films by plasma-assisted molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.apsusc.2020.146358openalex-snapshot
Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering
inferred← citeshttps://doi.org/10.1016/j.carbon.2018.12.094openalex-snapshot
Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer
inferred← citeshttps://doi.org/10.1016/j.jallcom.2022.163712openalex-snapshot
Direct van deer Waals epitaxy of multiband-emitting InGaN-based LEDs on graphene for phosphor-free white light illumination
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2015.02.003openalex-snapshot
Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2018.01.031openalex-snapshot
Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2022.126756openalex-snapshot
Remote epitaxy of InxGa1-xAs (001) on graphene covered GaAs(001) substrates
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2025.128195openalex-snapshot
Large scale epitaxy of AlGaN/GaN heterojunction films on h-BN/4H-SiC templates
inferred← citeshttps://doi.org/10.1016/j.materresbull.2025.113504openalex-snapshot
A perspective of GaAs//Si tandem photovoltaic cell: Architecture, fabrication, and performance
inferred← citeshttps://doi.org/10.1016/j.mattod.2022.10.020openalex-snapshot
2D-Antimonene-assisted hetero-epitaxial growth of perovskite films for efficient solar cells
inferred← citeshttps://doi.org/10.1016/j.mseb.2026.119564openalex-snapshot
Graphene-assisted growth of GaSb nanostructures on Si(111) by close-spaced vapor transport
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108605openalex-snapshot
Impact of graphene as 2D interlayer on the growth of GaAs by CSVT on Si (100) and GaAs (100) substrates
inferred← citeshttps://doi.org/10.1016/j.mtcomm.2024.110410openalex-snapshot
Effect of As4 beam equivalent pressure on the growth dynamics of InAs films grown at low temperature on graphene layers
inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.104463openalex-snapshot
Quasi van der Waals epitaxy nitride materials and devices on two dimension materials
inferred← citeshttps://doi.org/10.1016/j.photonics.2017.07.005openalex-snapshot
Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR
inferred← citeshttps://doi.org/10.1016/j.pquantelec.2020.100313openalex-snapshot
Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials
inferred← citeshttps://doi.org/10.1016/j.solmat.2019.04.024openalex-snapshot
Growth mechanism of Sb2Se3 thin films for photovoltaic application by vapor transport deposition
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2022.128199openalex-snapshot
Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2025.132407openalex-snapshot
The influence of nitridation temperature on 2D-MoS₂-assisted gallium nitride growth using molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.surfin.2024.105560openalex-snapshot
Atomic adsorption mechanism and initial growth of 2D GaN on graphene, h-BN and MoS2: A first principles study
inferred← citeshttps://doi.org/10.1016/j.surfin.2026.109620openalex-snapshot
Growth of AlAs (001) on graphene/GaAs (001) by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.susc.2014.11.020openalex-snapshot
The impact of graphene properties on GaN and AlN nucleation
inferred← citeshttps://doi.org/10.1021/acs.cgd.0c00125openalex-snapshot
van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics
inferred← citeshttps://doi.org/10.1021/acs.cgd.5b00949openalex-snapshot
Two-Dimensional van der Waals Epitaxy Kinetics in a Three-Dimensional Perovskite Halide
inferred← citeshttps://doi.org/10.1021/acs.cgd.9b00093openalex-snapshot
AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer
inferred← citeshttps://doi.org/10.1021/acs.cgd.9b01543openalex-snapshot
Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
inferred← citeshttps://doi.org/10.1021/acs.chemmater.7b03198openalex-snapshot
Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi2Se3 Single Crystals
inferred← citeshttps://doi.org/10.1021/acs.jpcc.1c03567openalex-snapshot
Direct Growth of Patterned Ge on Insulators Using Graphene
inferred← citeshttps://doi.org/10.1021/acs.jpclett.0c02717openalex-snapshot
Role of Buffer Layer and Building Unit in the Monolayer CrI3 Growth: A First-Principles Perspective
inferred← citeshttps://doi.org/10.1021/acs.nanolett.2c00632openalex-snapshot
Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c02731openalex-snapshot
Cold Seeded Epitaxy and Flexomagnetism in GdAuGe Membranes Exfoliated From Graphene/Ge(111)
inferred← citeshttps://doi.org/10.1021/acs.nanolett.7b01196openalex-snapshot
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
inferred← citeshttps://doi.org/10.1021/acsaem.1c03055openalex-snapshot
Remarkable Sb2Se3 Solar Cell with a Carbon Electrode by Tailoring Film Growth during the VTD Process
inferred← citeshttps://doi.org/10.1021/acsami.0c03044openalex-snapshot
Transferable High-Quality Inorganic Perovskites for Optoelectronic Devices by Weak Interaction Heteroepitaxy
inferred← citeshttps://doi.org/10.1021/acsami.1c01042openalex-snapshot
Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers
inferred← citeshttps://doi.org/10.1021/acsami.1c04659openalex-snapshot
High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene
inferred← citeshttps://doi.org/10.1021/acsami.3c09129openalex-snapshot
Mechanically Robust Interface at Metal/Muscovite Quasi van der Waals Epitaxy
inferred← citeshttps://doi.org/10.1021/acsami.6b12258openalex-snapshot
Highly Oriented SrTiO3 Thin Film on Graphene Substrate
inferred← citeshttps://doi.org/10.1021/acsami.7b14494openalex-snapshot
Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC
inferred← citeshttps://doi.org/10.1021/acsanm.0c02560openalex-snapshot
Nanometer-Thick Metastable Zinc Blende γ-MnTe Single-Crystalline Films for High-Performance Ultraviolet and Broadband Photodetectors
inferred← citeshttps://doi.org/10.1021/acsanm.0c02867openalex-snapshot
Clustering and Morphology Evolution of Gold on Nanostructured Surfaces of Silicon Carbide: Implications for Catalysis and Sensing
inferred← citeshttps://doi.org/10.1021/acsanm.1c03481openalex-snapshot
Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices
inferred← citeshttps://doi.org/10.1021/acsanm.8b00504openalex-snapshot
Selective Growth of Two-Dimensional Heterostructures of Gallium Selenide on Monolayer Graphene and the Thickness Dependent p- and n-Type Nature
inferred← citeshttps://doi.org/10.1021/acsnano.3c00026openalex-snapshot
Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer
inferred← citeshttps://doi.org/10.1021/acsnano.3c02565openalex-snapshot
Stability of Graphene and Influence of AlN Surface Pits on GaN Remote Heteroepitaxy for Exfoliation
inferred← citeshttps://doi.org/10.1021/acsnano.5c21282openalex-snapshot
Nitride Micro-LEDs toward Biointegrated Platforms: Growth, Integration, and Emerging Applications
inferred← citeshttps://doi.org/10.1021/acsnano.7b01967openalex-snapshot
Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices
inferred← citeshttps://doi.org/10.1021/acsphotonics.3c01765openalex-snapshot
Self-Focusing and Single-Mode Lasers from Novel Cavity Architecture for on-Fiber Integration
inferred← citeshttps://doi.org/10.1021/jacs.8b03871openalex-snapshot
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire
inferred← citeshttps://doi.org/10.1021/prechem.3c00122openalex-snapshot
Growth of Noncentrosymmetric Two-Dimensional Single Crystals
inferred← citeshttps://doi.org/10.1038/nmat4742openalex-snapshot
Two-dimensional gallium nitride realized via graphene encapsulation
inferred← citeshttps://doi.org/10.1038/s41586-025-09484-zopenalex-snapshot
Long-distance remote epitaxy
inferred← citeshttps://doi.org/10.1038/s43246-024-00718-7openalex-snapshot
Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy
inferred← citeshttps://doi.org/10.1039/c5ra09315eopenalex-snapshot
Enhancement of light emission in GaAs epilayers with graphene quantum dots
inferred← citeshttps://doi.org/10.1039/c6nr03621jopenalex-snapshot
Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition
inferred← citeshttps://doi.org/10.1039/c6ra04047kopenalex-snapshot
Growth of ideal amorphous carbon films at low temperature by e-beam evaporation
inferred← citeshttps://doi.org/10.1039/c7nr06684hopenalex-snapshot
Enhanced nucleation of germanium on graphene via dipole engineering
inferred← citeshttps://doi.org/10.1039/c7ra03590jopenalex-snapshot
InGaN/GaN nanowires epitaxy on large-area MoS 2 for high-performance light-emitters
inferred← citeshttps://doi.org/10.1039/c8ce01666fopenalex-snapshot
Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping
inferred← citeshttps://doi.org/10.1039/c8nr07140copenalex-snapshot
van der Waals epitaxy of highly (111)-oriented BaTiO 3 on MXene
inferred← citeshttps://doi.org/10.1039/c9ce00970aopenalex-snapshot
A self-assembled graphene nanomask for the epitaxial growth of nonplanar and planar GaN
inferred← citeshttps://doi.org/10.1039/c9ce01027kopenalex-snapshot
Growth of GaAs nanowire–graphite nanoplatelet hybrid structures
inferred← citeshttps://doi.org/10.1039/c9ta08823gopenalex-snapshot
Monocrystalline perovskite wafers/thin films for photovoltaic and transistor applications
inferred← citeshttps://doi.org/10.1039/c9tc06454kopenalex-snapshot
Toward van der Waals epitaxy of transferable ferroelectric barium titanate films via a graphene monolayer
inferred← citeshttps://doi.org/10.1039/d1ra01158hopenalex-snapshot
Formation and physical properties of the self-assembled BFO–CFO vertically aligned nanocomposite on a CFO-buffered two-dimensional flexible mica substrate
inferred← citeshttps://doi.org/10.1039/d1tc02710gopenalex-snapshot
Crystal polarity discrimination in GaN nanowires on graphene
inferred← citeshttps://doi.org/10.1039/d3nr01581eopenalex-snapshot
Crystal phase engineering of silicene by Sn-modified Ag(111)
inferred← citeshttps://doi.org/10.1039/d5ce00546aopenalex-snapshot
Advancements and applications in two-dimensional material-assisted epitaxy of semiconductor compounds
inferred← citeshttps://doi.org/10.1063/1.4964127openalex-snapshot
van der Waals epitaxy of CdTe thin film on graphene
inferred← citeshttps://doi.org/10.1063/1.4973371openalex-snapshot
Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.4980088openalex-snapshot
van der Waals epitaxy of CdS thin films on single-crystalline graphene
inferred← citeshttps://doi.org/10.1063/1.5011941openalex-snapshot
van der Waals epitaxial ZnTe thin film on single-crystalline graphene
inferred← citeshttps://doi.org/10.1063/1.5081112openalex-snapshot
Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate
inferred← citeshttps://doi.org/10.1063/1.5138588openalex-snapshot
3-dimensional nucleation of Fe oxide induced by a graphene buffer layer
inferred← citeshttps://doi.org/10.1063/1.5144906openalex-snapshot
Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes
inferred← citeshttps://doi.org/10.1063/5.0051885openalex-snapshot
Material considerations for the design of 2D/3D hot electron transistors
inferred← citeshttps://doi.org/10.1063/5.0057417openalex-snapshot
Domain boundaries in incommensurate epitaxial layers on weakly interacting substrates
inferred← citeshttps://doi.org/10.1063/5.0077885openalex-snapshot
Mechanism of remote epitaxy of stanene on Cu(111) substrate through monolayer graphene linking
inferred← citeshttps://doi.org/10.1063/5.0281027openalex-snapshot
Effects of defects in graphene on molecular beam epitaxy of CdTe on graphene/Ge
inferred← citeshttps://doi.org/10.1088/1361-6463/aaa875openalex-snapshot
Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer
inferred← citeshttps://doi.org/10.1088/1361-6463/ab2bb3openalex-snapshot
Brightness improvement in a graphene inserted GaN/ZnO heterojunction light emitting diode
inferred← citeshttps://doi.org/10.1088/1361-6463/ac3aa9openalex-snapshot
Topical review: pathways toward cost-effective single-junction III–V solar cells
inferred← citeshttps://doi.org/10.1088/1361-6528/aadb78openalex-snapshot
Remote epitaxy of copper on sapphire through monolayer graphene buffer
inferred← citeshttps://doi.org/10.1088/1361-6528/aae76bopenalex-snapshot
Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer
inferred← citeshttps://doi.org/10.1088/1361-6528/accc39openalex-snapshot
High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED
inferred← citeshttps://doi.org/10.1088/1361-6528/acf3f1openalex-snapshot
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
inferred← citeshttps://doi.org/10.1088/1674-4926/40/6/060401openalex-snapshot
Heteroepitaxy of semiconductor thin films
inferred← citeshttps://doi.org/10.1088/1742-6596/1364/1/012067openalex-snapshot
Morphology and surface stability of GaN thin film grown on the short growth time by Plasma Assisted Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.1088/2053-1583/ae9370openalex-snapshot
Navigating growth regimes in graphene-assisted III-nitride epitaxy: insights, challenges, and pathways forward
inferred← citeshttps://doi.org/10.1103/physrevmaterials.1.063402openalex-snapshot
Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation
inferred← citeshttps://doi.org/10.1103/physrevmaterials.2.113402openalex-snapshot
Metalorganic vapor phase epitaxy of large size CdTe grains on mica through chemical and van der Waals interactions
inferred← citeshttps://doi.org/10.1103/physrevmaterials.7.083401openalex-snapshot
Control of ternary alloy composition during remote epitaxy on graphene
inferred← citeshttps://doi.org/10.1103/prxquantum.5.040321openalex-snapshot
Hybrid III-V/Silicon Quantum Photonic Device Generating Broadband Entangled Photon Pairs
inferred← citeshttps://doi.org/10.1155/2016/4601249openalex-snapshot
Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures
inferred← citeshttps://doi.org/10.1186/s11671-018-2546-xopenalex-snapshot
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
inferred← citeshttps://doi.org/10.1186/s40580-023-00387-1openalex-snapshot
Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates
inferred← citeshttps://doi.org/10.1186/s40580-023-00388-0openalex-snapshot
Lattice modulation strategies for 2D material assisted epitaxial growth
inferred← citeshttps://doi.org/10.1364/oe.391737openalex-snapshot
Optically-thick 300 nm GaAs solar cells using adjacent photonic crystals
inferred← citeshttps://doi.org/10.1515/energyo.0069.00007openalex-snapshot
Integration of low-dimensional materials for energy-harvesting applications: current progress, scope, challenges, and opportunities
inferred← citeshttps://doi.org/10.1515/ntrev-2016-0001openalex-snapshot
Integration of low-dimensional materials for energy-harvesting applications: current progress, scope, challenges, and opportunities
inferred← citeshttps://doi.org/10.2139/ssrn.5704581openalex-snapshot
Growth of AlAs (001) on Graphene/GaAs(001) by Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.2139/ssrn.5891686openalex-snapshot
Growth of AlAs (001) on Graphene/GaAs(001) by Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.2472/jsms.69.701openalex-snapshot
Van der Waals Epitaxy of Indium Nitride Crystals on Graphitic Structure by RF-MBE
inferred← citeshttps://doi.org/10.3390/ma13173835openalex-snapshot
Van der Waals Epitaxy of III-Nitrides and Its Applications
inferred← citeshttps://doi.org/10.3390/nano11061406openalex-snapshot
Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer
inferred← citeshttps://doi.org/10.3390/nano12050785openalex-snapshot
MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
inferred← citeshttps://doi.org/10.3390/nano13040784openalex-snapshot
Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask
inferred← citeshttps://doi.org/10.54014/jeks-jz8aopenalex-snapshot
Two-dimensional chalcogenides : material synthesis and nano-device applications
inferred← citeshttps://doi.org/10.5772/64419openalex-snapshot
Heteroepitaxial Growth of III–V Semiconductors on 2D Materials
inferred← citeshttps://doi.org/10.70675/a724c487z1d04z42b0za805z605d269f1c32openalex-snapshot
Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.