On the public citation graph

Impact of Graphene as 2d Interlayer on the Growth of Gaas by Csvt on Si (100) and Gaas (100) Substrates

https://doi.org/10.2139/ssrn.4795110
0 signed · 43 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.201303368openalex-extracted
Near‐Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction
inferredcites →https://doi.org/10.1002/adfm.201400960openalex-extracted
Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
inferredcites →https://doi.org/10.1002/advs.202204058openalex-extracted
High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells
inferredcites →https://doi.org/10.1002/jrs.2321openalex-extracted
Vibrational properties of graphene and graphene layers
inferredcites →https://doi.org/10.1007/bf01193390openalex-extracted
Recent progress in semiconductor lasers — cw GaAs lasers are now ready for new applications
inferredcites →https://doi.org/10.1016/0022-3697(88)90218-1openalex-extracted
Dominant donor trap in n-type epitaxial GaAs grown by CSVT
inferredcites →https://doi.org/10.1016/0038-1098(96)00411-5openalex-extracted
Raman scattering lineshapes in GaAs and InP
inferredcites →https://doi.org/10.1016/j.apsusc.2023.157627openalex-extracted
GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1)Si: Lattice tilt, mosaicity and defects content
inferredcites →https://doi.org/10.1016/j.apsusc.2023.157667openalex-extracted
Crystalline phase purity and twinning of Mg-doped zincblende GaN thin films
inferredcites →https://doi.org/10.1016/j.ijft.2023.100303openalex-extracted
Estimation of power losses in single-junction gallium-arsenide solar photovoltaic cells
inferredcites →https://doi.org/10.1016/j.jallcom.2019.151690openalex-extracted
Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications
inferredcites →https://doi.org/10.1016/j.jallcom.2020.157936openalex-extracted
Effect of the Sb content and the n− and p−GaSb(100) substrates on the physical and chemical properties of InSb As1- alloys for mid-infrared applications: Analysis of surface, bulk and interface
inferredcites →https://doi.org/10.1016/j.physrep.2009.02.003openalex-extracted
Raman spectroscopy in graphene
inferredcites →https://doi.org/10.1016/j.surfin.2023.102909openalex-extracted
Interface engineering by inserting Al2O3 tunneling layer to enhance the performance of graphene/GaAs heterojunction photodetector
inferredcites →https://doi.org/10.1016/s0360-1285(03)00032-7openalex-extracted
Thermal performance of Si and GaAs based solar cells and modules: a review
inferredcites →https://doi.org/10.1021/acsnano.1c03296openalex-extracted
Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene
inferredcites →https://doi.org/10.1021/nl061702aopenalex-extracted
Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
inferredcites →https://doi.org/10.1021/nl3018115openalex-extracted
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
inferredcites →https://doi.org/10.1021/nn101796eopenalex-extracted
Laser-Synthesized Epitaxial Graphene
inferredcites →https://doi.org/10.1038/nature22053openalex-extracted
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
inferredcites →https://doi.org/10.1038/nmat1849openalex-extracted
The rise of graphene
inferredcites →https://doi.org/10.1038/nnano.2009.292openalex-extracted
Ultrafast graphene photodetector
inferredcites →https://doi.org/10.1038/s41467-020-17693-5openalex-extracted
Universal growth of ultra-thin III–V semiconductor single crystals
inferredcites →https://doi.org/10.1038/s41563-018-0176-4openalex-extracted
Polarity governs atomic interaction through two-dimensional materials
inferredcites →https://doi.org/10.1038/s41565-017-0006-xopenalex-extracted
Observation of Dirac bands in artificial graphene in small-period nanopatterned GaAs quantum wells
inferredcites →https://doi.org/10.1038/s41598-017-19084-1openalex-extracted
Layer number identification of CVD-grown multilayer graphene using Si peak analysis
inferredcites →https://doi.org/10.1039/c5nr06175jopenalex-extracted
Carbon-atom wires: 1-D systems with tunable properties
inferredcites →https://doi.org/10.1039/c5tc00449gopenalex-extracted
A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity
inferredcites →https://doi.org/10.1039/c8nr00158hopenalex-extracted
A graphene/single GaAs nanowire Schottky junction photovoltaic device
inferredcites →https://doi.org/10.1063/1.1368156openalex-extracted
Band parameters for III–V compound semiconductors and their alloys
inferredcites →https://doi.org/10.1063/1.3224910openalex-extracted
Graphene on gallium arsenide: Engineering the visibility
inferredcites →https://doi.org/10.1063/1.331665openalex-extracted
Semiconducting and other major properties of gallium arsenide
inferredcites →https://doi.org/10.1088/1361-6528/ac8a4fopenalex-extracted
Defect seeded remote epitaxy of GaAs films on graphene
inferredcites →https://doi.org/10.1103/physrevb.80.245324openalex-extracted
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects
inferredcites →https://doi.org/10.1107/s0021889811038970openalex-extracted
VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data
inferredcites →https://doi.org/10.1109/tthz.2012.2235911openalex-extracted
Emission and Detection of Terahertz Radiation Using Two-Dimensional Electrons in III–V Semiconductors and Graphene
inferredcites →https://doi.org/10.1116/1.591427openalex-extracted
Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth
inferredcites →https://doi.org/10.1126/science.1102896openalex-extracted
Electric Field Effect in Atomically Thin Carbon Films
inferredcites →https://doi.org/10.1134/s1063782619030126openalex-extracted
Discovery of III–V Semiconductors: Physical Properties and Application
inferredcites →https://doi.org/10.1146/annurev.ms.08.080178.001031openalex-extracted
Materials for Integrated Optics: GaAs
inferredcites →https://doi.org/10.1186/s40580-023-00369-3openalex-extracted
Applications of remote epitaxy and van der Waals epitaxy
inferredcites →https://doi.org/10.1201/9781315152042openalex-extracted
2D MATERIALS
inferredcites →https://doi.org/10.3390/cryst9020068openalex-extracted
Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.