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Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

https://doi.org/10.1002/adma.202204298

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Ferroelectric Domain Wall Memristor

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Ferroelectric Domain Wall Injection

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Electrical Tunability of Domain Wall Conductivity in LiNbO 3 Thin Films

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Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

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Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility

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Semiconductor Physics

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Lithium niobate: Summary of physical properties and crystal structure

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Geometrical magnetoresistance and hall mobility in gunn effect devices

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Hall Effect Devices

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Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors

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Photoconductivity and electron mobility in LiNbO3 co-doped with Cr3+ and MgO

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Low-Voltage Domain-Wall LiNbO3 Memristors

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Velocity Control of 180° Domain Walls in Ferroelectric Thin Films by Electrode Modification

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Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

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Large Carrier Mobilities in ErMnO3 Conducting Domain Walls Revealed by Quantitative Hall-Effect Measurements

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Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals

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Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO 3

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Non-saturating magnetoresistance in heavily disordered semiconductors

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A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

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Hall effect in charged conducting ferroelectric domain walls

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Injection and controlled motion of conducting domain walls in improper ferroelectric Cu-Cl boracite

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A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

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Free-electron gas at charged domain walls in insulating BaTiO3

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Anisotropic conductance at improper ferroelectric domain walls

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Experimental demonstration of hybrid improper ferroelectricity and the presence of abundant charged walls in (Ca,Sr)3Ti2O7 crystals

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Functional electronic inversion layers at ferroelectric domain walls

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Nonvolatile ferroelectric field-effect transistors

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Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

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Large and accessible conductivity of charged domain walls in lithium niobate

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Two-dimensional electron gas with six-fold symmetry at the (111) surface of KTaO3

inferredcites →https://doi.org/10.1063/1.1735520openalex-snapshot

Corbino Disk

inferredcites →https://doi.org/10.1063/1.1736221openalex-snapshot

Corbino Disk Magnetoresistivity Measurements on InSb

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inferredcites →https://doi.org/10.1103/physrevb.83.235313openalex-snapshot

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

inferredcites →https://doi.org/10.1103/physrevlett.108.067203openalex-snapshot

Magnetotransport at Domain Walls in BiFeO3

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Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

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Conductive Domain-Wall Temperature Sensors of LiNbO3 Ferroelectric Single-Crystal Thin Films

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Introduction to Solid State Physics

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Nonvolatile ferroelectric domain wall memory

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inferredcites →https://doi.org/10.1515/zna-1958-0608openalex-snapshot

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Springer Series in Materials Science 11

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Comprehensive review on the development of high mobility in oxide thin film transistors

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate

inferred← citeshttps://doi.org/10.1002/adma.202510981openalex-snapshot

CMOS‐Compatible LiNbO 3 Domain‐Wall Entropy Engine for Ultrafast True Random Number Generation

inferred← citeshttps://doi.org/10.1002/aelm.202400091openalex-snapshot

Fundamental Aspects of Conduction in Charged ErMnO3 Domain Walls

inferred← citeshttps://doi.org/10.1002/aelm.202400324openalex-snapshot

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

inferred← citeshttps://doi.org/10.1002/aelm.202500142openalex-snapshot

Current Flow Mapping in Conducting Ferroelectric Domain Walls Using Scanning NV‐Magnetometry

inferred← citeshttps://doi.org/10.1002/apxr.202200095openalex-snapshot

Tuning Local Conductance to Enable Demonstrator Ferroelectric Domain Wall Diodes and Logic Gates

inferred← citeshttps://doi.org/10.1002/smll.202508603openalex-snapshot

Direct Thermal Imaging of Domain Wall Hot Spots in LiNbO 3

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Structural stability in soft and hard spinel ferrites: A review

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LiNbO3-based ferroelectric tunnel junctions with changeable electroresistance for data storage

inferred← citeshttps://doi.org/10.1016/j.ssi.2025.116949openalex-snapshot

Demonstration of domain wall current in MgO-doped lithium niobate single crystals up to 400 ° C

inferred← citeshttps://doi.org/10.1021/acs.nanolett.3c02966openalex-snapshot

Ferroelectric Domain Wall p–n Junctions

inferred← citeshttps://doi.org/10.1021/acsami.2c20579openalex-snapshot

High-Power LiNbO3 Domain-Wall Nanodevices

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Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties

inferred← citeshttps://doi.org/10.1038/s41467-026-68553-7openalex-snapshot

Polar discontinuities, emergent conductivity, and critical twist-angle-dependent behaviour at wafer-bonded ferroelectric interfaces

inferred← citeshttps://doi.org/10.1063/5.0152518openalex-snapshot

Domain wall saddle point morphology in ferroelectric triglycine sulfate

inferred← citeshttps://doi.org/10.1063/5.0218674openalex-snapshot

Ultralow electric-field poling of LiNbO3 single-crystal devices

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Toward the reproducible fabrication of conductive ferroelectric domain walls into lithium niobate bulk single crystals

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Perspective: Domain wall nanoelectronics

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Nanoscale p–n junctions based on conductive domain walls in lithium niobate films on insulators

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Improved electrical performance of LiNbO3 domain wall memories after thinning of interfacial layers at low temperatures

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Adjustable imprint fields in LiNbO3 domain wall memories

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Hall mobilities and sheet carrier densities in a single LiNbO3 conductive ferroelectric domain wall

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Equivalent-circuit model that quantitatively describes domain-wall conductivity in ferroelectric LiNbO3

inferred← citeshttps://doi.org/10.1109/led.2023.3346891openalex-snapshot

Cryogenic Ferroelectric LiNbO3 Domain Wall Memory

inferred← citeshttps://doi.org/10.17073/1609-3577j.met202310.565openalex-snapshot

Electrophysical properties, memristive and resistive switching in charged domain walls in lithium niobate

inferred← citeshttps://doi.org/10.3390/nano14121031openalex-snapshot

High-Performance LiNbO3 Domain Wall Memory Devices with Enhanced Selectivity via Optimized Metal–Semiconductor Contact

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Intrinsic Conductance of Ferroelectric Charged Domain Walls

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