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Efficiency droop in light‐emitting diodes: Challenges and countermeasures

https://doi.org/10.1002/lpor.201200025

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/0470068329openalex-snapshot

Physics of Semiconductor Devices

inferredcites →https://doi.org/10.1002/0471238961.1209070811091908.a01.pub3openalex-snapshot

Light Emitting Diodes

inferredcites →https://doi.org/10.1002/1521-396x(200111)188:1<15::aid-pssa15>3.0.co;2-5openalex-snapshot

Performance of High-Power AlInGaN Light Emitting Diodes

inferredcites →https://doi.org/10.1002/pssa.201026149openalex-snapshot

Efficiency droop in nitride‐based light‐emitting diodes

inferredcites →https://doi.org/10.1002/pssc.200778414openalex-snapshot

Is Auger recombination responsible for the efficiency rollover in III‐nitride light‐emitting diodes?

inferredcites →https://doi.org/10.1002/pssc.200880401openalex-snapshot

Benefits of negative polarization charge in n ‐InGaN on p ‐GaN single heterostructure light emitting diode with p ‐side down

inferredcites →https://doi.org/10.1002/pssc.200880760openalex-snapshot

Temperature‐dependent droop of electroluminescence efficiency in blue (In,Ga)N quantum‐well diodes

inferredcites →https://doi.org/10.1002/pssc.200880865openalex-snapshot

Auger losses in GaN‐based quantum wells: Microscopic theory

inferredcites →https://doi.org/10.1002/pssc.200880950openalex-snapshot

On the origin of IQE‐‘droop’ in InGaN LEDs

inferredcites →https://doi.org/10.1002/pssc.201001001openalex-snapshot

Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure

inferredcites →https://doi.org/10.1002/pssc.201001015openalex-snapshot

Blue LEDs – way to overcome efficiency droop

inferredcites →https://doi.org/10.1016/j.jcp.2005.08.011openalex-snapshot

Simulation of visible and ultra-violet group-III nitride light emitting diodes

inferredcites →https://doi.org/10.1021/nl103649dopenalex-snapshot

Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics

inferredcites →https://doi.org/10.1021/nl203860bopenalex-snapshot

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

inferredcites →https://doi.org/10.1038/nphoton.2007.293openalex-snapshot

Ultraviolet light-emitting diodes based on group three nitrides

inferredcites →https://doi.org/10.1063/1.115805openalex-snapshot

Activation energies of Si donors in GaN

inferredcites →https://doi.org/10.1063/1.116981openalex-snapshot

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

inferredcites →https://doi.org/10.1063/1.1379789openalex-snapshot

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

inferredcites →https://doi.org/10.1063/1.1594833openalex-snapshot

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

inferredcites →https://doi.org/10.1063/1.2432307openalex-snapshot

Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates

inferredcites →https://doi.org/10.1063/1.2746418openalex-snapshot

High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

inferredcites →https://doi.org/10.1063/1.2785135openalex-snapshot

Auger recombination in InGaN measured by photoluminescence

inferredcites →https://doi.org/10.1063/1.2800290openalex-snapshot

Origin of efficiency droop in GaN-based light-emitting diodes

inferredcites →https://doi.org/10.1063/1.2801704openalex-snapshot

Defect related issues in the “current roll-off” in InGaN based light emitting diodes

inferredcites →https://doi.org/10.1063/1.2805197openalex-snapshot

Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

inferredcites →https://doi.org/10.1063/1.2822442openalex-snapshot

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.2938055openalex-snapshot

A phase feature extraction technique for terahertz reflection spectroscopy

inferredcites →https://doi.org/10.1063/1.2953543openalex-snapshot

On the importance of radiative and Auger losses in GaN-based quantum wells

inferredcites →https://doi.org/10.1063/1.2963029openalex-snapshot

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

inferredcites →https://doi.org/10.1063/1.2988324openalex-snapshot

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

inferredcites →https://doi.org/10.1063/1.3058687openalex-snapshot

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3073860openalex-snapshot

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3081059openalex-snapshot

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

inferredcites →https://doi.org/10.1063/1.3089691openalex-snapshot

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

inferredcites →https://doi.org/10.1063/1.3133359openalex-snapshot

Auger recombination rates in nitrides from first principles

inferredcites →https://doi.org/10.1063/1.3176406openalex-snapshot

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

inferredcites →https://doi.org/10.1063/1.3216578openalex-snapshot

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3236538openalex-snapshot

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

inferredcites →https://doi.org/10.1063/1.3258488openalex-snapshot

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3266014openalex-snapshot

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3266520openalex-snapshot

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

inferredcites →https://doi.org/10.1063/1.3276066openalex-snapshot

Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

inferredcites →https://doi.org/10.1063/1.3330870openalex-snapshot

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

inferredcites →https://doi.org/10.1063/1.3367897openalex-snapshot

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3373610openalex-snapshot

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

inferredcites →https://doi.org/10.1063/1.3374686openalex-snapshot

Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

inferredcites →https://doi.org/10.1063/1.3441373openalex-snapshot

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

inferredcites →https://doi.org/10.1063/1.3446889openalex-snapshot

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

inferredcites →https://doi.org/10.1063/1.3449557openalex-snapshot

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

inferredcites →https://doi.org/10.1063/1.3464976openalex-snapshot

Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3493654openalex-snapshot

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3507891openalex-snapshot

Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

inferredcites →https://doi.org/10.1063/1.3513394openalex-snapshot

Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3520139openalex-snapshot

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

inferredcites →https://doi.org/10.1063/1.3525605openalex-snapshot

A numerical study of Auger recombination in bulk InGaN

inferredcites →https://doi.org/10.1063/1.3531753openalex-snapshot

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

inferredcites →https://doi.org/10.1063/1.3544584openalex-snapshot

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

inferredcites →https://doi.org/10.1063/1.3570656openalex-snapshot

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3591967openalex-snapshot

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

inferredcites →https://doi.org/10.1063/1.3605572openalex-snapshot

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

inferredcites →https://doi.org/10.1063/1.3609783openalex-snapshot

Effects of polarization-field tuning in GaInN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3618673openalex-snapshot

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3653390openalex-snapshot

Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

inferredcites →https://doi.org/10.1063/1.3655903openalex-snapshot

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

inferredcites →https://doi.org/10.1063/1.3658031openalex-snapshot

Temperature-dependence of the internal efficiency droop in GaN-based diodes

inferredcites →https://doi.org/10.1063/1.3658388openalex-snapshot

Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop

inferredcites →https://doi.org/10.1063/1.3665252openalex-snapshot

Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier

inferredcites →https://doi.org/10.1063/1.3671395openalex-snapshot

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3697684openalex-snapshot

Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma

inferredcites →https://doi.org/10.1063/1.3697994openalex-snapshot

Charge carrier velocity distributions in high mobility polymer field-effect transistors

inferredcites →https://doi.org/10.1063/1.4704366openalex-snapshot

Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

inferredcites →https://doi.org/10.1088/0022-3727/43/35/354004openalex-snapshot

Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells

inferredcites →https://doi.org/10.1088/0268-1242/10/3/005openalex-snapshot

Inelastic and elastic mechanisms of electron capture to a quantum well

inferredcites →https://doi.org/10.1088/0957-4484/21/13/134026openalex-snapshot

Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique

inferredcites →https://doi.org/10.1103/physrevb.62.10867openalex-snapshot

Hole conductivity and compensation in epitaxial GaN:Mg layers

inferredcites →https://doi.org/10.1103/physrevb.73.245316openalex-snapshot

Probing the electrostatic potential of charged dislocations in n−GaN and n−ZnO epilayers by transmission electron holography

inferredcites →https://doi.org/10.1109/jdt.2007.895339openalex-snapshot

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

inferredcites →https://doi.org/10.1109/jqe.2010.2045104openalex-snapshot

Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes

inferredcites →https://doi.org/10.1109/jstqe.2009.2014395openalex-snapshot

Partial Polarization Matching in GaInN-Based Multiple Quantum Well Blue LEDs Using Ternary GaInN Barriers for a Reduced Efficiency Droop

inferredcites →https://doi.org/10.1109/lpt.2009.2021155openalex-snapshot

Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes

inferredcites →https://doi.org/10.1109/lpt.2009.2037827openalex-snapshot

Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths

inferredcites →https://doi.org/10.1109/lpt.2010.2065221openalex-snapshot

Reduction in the Efficiency-Droop Effect of InGaN Green Light-Emitting Diodes Using Gradual Quantum Wells

inferredcites →https://doi.org/10.1109/lpt.2010.2091119openalex-snapshot

Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses

inferredcites →https://doi.org/10.1109/ted.2008.923561openalex-snapshot

Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

inferredcites →https://doi.org/10.1109/ted.2009.2035538openalex-snapshot

High-Power and High-Efficiency InGaN-Based Light Emitters

inferredcites →https://doi.org/10.1117/12.873941openalex-snapshot

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

inferredcites →https://doi.org/10.1126/science.1108712openalex-snapshot

Solid-State Light Sources Getting Smart

inferredcites →https://doi.org/10.1134/s1063782606070190openalex-snapshot

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

inferredcites →https://doi.org/10.1143/apex.4.012105openalex-snapshot

Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

inferredcites →https://doi.org/10.1143/apex.4.012106openalex-snapshot

Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes

inferredcites →https://doi.org/10.1143/apex.4.082104openalex-snapshot

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

inferredcites →https://doi.org/10.1143/jjap.46.l126openalex-snapshot

High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

inferredcites →https://doi.org/10.1149/1.3327909openalex-snapshot

Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate

inferredcites →https://doi.org/10.1364/oe.18.005466openalex-snapshot

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

inferredcites →https://doi.org/10.1364/oe.20.00a133openalex-snapshot

Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers

inferredcites →https://doi.org/10.1364/ol.35.001368openalex-snapshot

Advantages of blue InGaN light-emitting diodes with AlGaN barriers

inferredcites →https://doi.org/10.1364/ol.35.003285openalex-snapshot

Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

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Incoming claims: where this work appears in other papers’ reference lists and arguments.

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The influences of sputtered AlN buffer layer on AlInGaN based blue and near‐ultraviolet light emitting diodes

inferred← citeshttps://doi.org/10.1002/pssa.201800628openalex-snapshot

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

inferred← citeshttps://doi.org/10.1002/pssa.201800815openalex-snapshot

Progress in External Quantum Efficiency for III‐Nitride Based Deep Ultraviolet Light‐Emitting Diodes

inferred← citeshttps://doi.org/10.1002/pssa.201900715openalex-snapshot

Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition

inferred← citeshttps://doi.org/10.1002/pssa.202100003openalex-snapshot

Enhancing Efficiency of AlGaN Ultraviolet‐B Light‐Emitting Diodes with Graded p‐AlGaN Hole Injection Layer

inferred← citeshttps://doi.org/10.1002/pssa.202300276openalex-snapshot

Performance of Improvement of AlGaN‐Based Deep UV Light‐Emitting Diode with Two Parts Linearly Graded Barriers

inferred← citeshttps://doi.org/10.1002/pssa.202400063openalex-snapshot

Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes

inferred← citeshttps://doi.org/10.1002/pssb.201600723openalex-snapshot

Annealing of the sputtered AlN buffer layer on r‐plane sapphire and its effect on a‐plane GaN crystalline quality

inferred← citeshttps://doi.org/10.1002/pssr.202000487openalex-snapshot

Role of Intrinsic Surface States in Efficiency Attenuation of GaN‐Based Micro‐Light‐Emitting‐Diodes

inferred← citeshttps://doi.org/10.1002/qua.27520openalex-snapshot

Exploring the Multifunctional Properties of Tm‐Doped Al x Ga1− x N Alloys: From Potoluminescence to Spintronics

inferred← citeshttps://doi.org/10.1002/sdtp.16126openalex-snapshot

P‐8.2: Fabrication of ultrahigh‐resolution Micro‐LED display by flip‐chip bonding

inferred← citeshttps://doi.org/10.1002/sdtp.16132openalex-snapshot

P‐8.8: Investigation of GaN‐based Micro‐LEDs with Sidewall Passivation and KOH Treatment

inferred← citeshttps://doi.org/10.1002/sdtp.16418openalex-snapshot

P‐10.7: Investigation of Fabrication Technologies of GaN‐based Micro‐LED Devices

inferred← citeshttps://doi.org/10.1002/sdtp.16933openalex-snapshot

P‐64: Investigation of Fabrication Technologies of GaN‐based Micro‐LED Devices

inferred← citeshttps://doi.org/10.1002/slct.202505315openalex-snapshot

Enhanced Optical Performance and Thermal Stability of Screen‐Printed Color‐Converter Composite Films for Laser‐Driven‐White Lighting

inferred← citeshttps://doi.org/10.1007/978-3-030-17195-7_11openalex-snapshot

Lamps, Gear and Drivers

inferred← citeshttps://doi.org/10.1007/978-3-031-59971-2_4openalex-snapshot

Semiconductor Crystals and Device Physics

inferred← citeshttps://doi.org/10.1007/978-3-319-24100-5_1openalex-snapshot

A Brief Review of III-Nitride UV Emitter Technologies and Their Applications

inferred← citeshttps://doi.org/10.1007/978-3-319-24100-5_8openalex-snapshot

AlGaN-Based Ultraviolet Laser Diodes

inferred← citeshttps://doi.org/10.1007/978-3-319-31903-2_5openalex-snapshot

Solid-State Lighting Based on Light Emitting Diode Technology

inferred← citeshttps://doi.org/10.1007/978-3-319-99211-2_9openalex-snapshot

On the Light Extraction Efficiency for III-Nitride-Based Light-Emitting Diodes

inferred← citeshttps://doi.org/10.1007/978-981-13-6179-1_1openalex-snapshot

Introduction

inferred← citeshttps://doi.org/10.1007/978-981-13-6179-1_5openalex-snapshot

Enhance the Electron Injection Efficiency for DUV LEDs

inferred← citeshttps://doi.org/10.1007/978-981-15-7949-3_7openalex-snapshot

III-Nitride LED Quantum Efficiency Improvement Technology

inferred← citeshttps://doi.org/10.1007/978-981-19-2308-1_11openalex-snapshot

Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach

inferred← citeshttps://doi.org/10.1007/978-981-95-1928-6_5openalex-snapshot

Key Factors Limiting the External Quantum Efficiency of GaN-Based Micro-LEDs and Remedies

inferred← citeshttps://doi.org/10.1007/978-981-97-7917-8_20openalex-snapshot

5 nm Al0.65Ga0.35N/GaN/Al0.65Ga0.35N Hole Source Layer to Improve the Performance of the AlGaN-Based UV-C LED at Higher Current Density

inferred← citeshttps://doi.org/10.1007/978-981-99-6774-2_14openalex-snapshot

Cooling High-Powered LEDs Using an Innovative Fully Automated Heat Pipe System

inferred← citeshttps://doi.org/10.1007/s00339-021-04559-wopenalex-snapshot

The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer

inferred← citeshttps://doi.org/10.1007/s10043-022-00766-9openalex-snapshot

Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes

inferred← citeshttps://doi.org/10.1007/s10825-015-0683-3openalex-snapshot

Multiscale approaches for the simulation of InGaN/GaN LEDs

inferred← citeshttps://doi.org/10.1007/s10825-016-0904-4openalex-snapshot

Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model

inferred← citeshttps://doi.org/10.1007/s10825-025-02476-2openalex-snapshot

Integrated simulation and machine learning framework for high-performance lead-free RbGeI3 perovskite solar cells with WS2/CuI transport layers

inferred← citeshttps://doi.org/10.1007/s10853-026-12594-2openalex-snapshot

Review: materials-driven efficiency limits in light-emitting diodes: defects, carrier dynamics, and structure–property relationships

inferred← citeshttps://doi.org/10.1007/s10854-024-12059-9openalex-snapshot

Luminescence saturation studies of YAG: Ce phosphor ceramics for white laser diode lighting

inferred← citeshttps://doi.org/10.1007/s10854-024-13109-yopenalex-snapshot

Measuring spot sizes of laser-excited phosphor ceramics with a goniophotometer

inferred← citeshttps://doi.org/10.1007/s11082-016-0537-7openalex-snapshot

Electrical-optical analysis of photonic crystals GaN-based high power light emitting diodes

inferred← citeshttps://doi.org/10.1007/s11082-017-1264-4openalex-snapshot

Signature of the ideality factor in III-nitride multi quantum well light emitting diodes

inferred← citeshttps://doi.org/10.1007/s11082-021-03054-zopenalex-snapshot

Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material

inferred← citeshttps://doi.org/10.1007/s11082-023-05714-8openalex-snapshot

Performance enhancement of InGaN based near ultraviolet LEDs with asymmetric staggered quantum wells

inferred← citeshttps://doi.org/10.1007/s11082-025-08575-5openalex-snapshot

Efficiency analysis of perovskite leds via optoelectronic modeling

inferred← citeshttps://doi.org/10.1007/s11664-022-09869-0openalex-snapshot

The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer

inferred← citeshttps://doi.org/10.1007/s11664-024-11190-xopenalex-snapshot

Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

inferred← citeshttps://doi.org/10.1007/s11664-026-13083-7openalex-snapshot

Optical–Electrical–Thermal Effects on Efficiency Droop in Light-Emitting Diodes

inferred← citeshttps://doi.org/10.1007/s12034-024-03267-4openalex-snapshot

Development of waste glass frits-based phosphor in glass system for solid-state lighting with high thermal stability

inferred← citeshttps://doi.org/10.1007/s12200-021-1216-2openalex-snapshot

Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate

inferred← citeshttps://doi.org/10.1007/s12596-026-03089-zopenalex-snapshot

Engineered optical properties of phosphor-silver nanoparticle composites for high-CRI solid-state lighting

inferred← citeshttps://doi.org/10.1007/s12648-024-03281-6openalex-snapshot

Improved AlGaN–GaN MQW LED performance incorporating InAlN MLB and AlN back barrier: Li-Fi applications

inferred← citeshttps://doi.org/10.1007/s40145-022-0578-2openalex-snapshot

Patterned glass ceramic design for high-brightness high-color-quality laser-driven lightings

inferred← citeshttps://doi.org/10.1007/s42835-023-01721-7openalex-snapshot

Self-consistent Analysis for Optimization of AlGaAs/GaAs Based Heterostructure

inferred← citeshttps://doi.org/10.1016/b978-0-08-101942-9.00009-5openalex-snapshot

Efficiency droop in GaInN/GaN LEDs

inferred← citeshttps://doi.org/10.1016/b978-0-12-819254-2.00010-2openalex-snapshot

Introduction to optoelectronic devices

inferred← citeshttps://doi.org/10.1016/b978-0-323-90761-3.00001-2openalex-snapshot

Luminescent transparent ceramic

inferred← citeshttps://doi.org/10.1016/bs.semsem.2016.07.001openalex-snapshot

Exploring the Next Phase in Gallium Nitride Photonics

inferred← citeshttps://doi.org/10.1016/bs.semsem.2016.08.002openalex-snapshot

Development of Deep UV LEDs and Current Problems in Material and Device Technology

inferred← citeshttps://doi.org/10.1016/j.aop.2015.04.012openalex-snapshot

Lateral carrier confinement in InGaN quantum-well nanorods

inferred← citeshttps://doi.org/10.1016/j.applthermaleng.2016.10.041openalex-snapshot

A novel automated heat-pipe cooling device for high-power LEDs

inferred← citeshttps://doi.org/10.1016/j.applthermaleng.2017.08.120openalex-snapshot

Experimental investigation on the thermal performance of a light emitting diode headlamp with a flexible woven heat sink

inferred← citeshttps://doi.org/10.1016/j.cap.2015.07.009openalex-snapshot

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

inferred← citeshttps://doi.org/10.1016/j.cap.2020.08.005openalex-snapshot

Fabrication of red-emitting CaAlSiN3: Eu2+ through phosphor-in-glass approach for application in rear combination lamp

inferred← citeshttps://doi.org/10.1016/j.cej.2022.136591openalex-snapshot

Bi-Color Phosphor-in-Glass Films Achieve Superior Color Quality Laser-Driven Stage Spotlights

inferred← citeshttps://doi.org/10.1016/j.cej.2025.159559openalex-snapshot

Sr2AlTaO6: Ni2+ phosphors with excellent IQE and thermal stability as NIR-II source for night vision, nonvisual detection, and far-field imaging

inferred← citeshttps://doi.org/10.1016/j.ceramint.2021.05.256openalex-snapshot

Luminescent properties and LED Application of Broadband Near-Infrared Emitting NaInGe2O6: Cr3+ phosphors

inferred← citeshttps://doi.org/10.1016/j.ceramint.2021.07.229openalex-snapshot

Ion-exchanged LTA zeolite derived nepheline phase NaAlSiO4:Eu2+ ceramic phosphor for laser illumination

inferred← citeshttps://doi.org/10.1016/j.ceramint.2022.10.302openalex-snapshot

High CRI white light-emitting phosphor-in-glass film for laser lighting applications by adding cyan phosphor BaSi2O2N2:Eu2+

inferred← citeshttps://doi.org/10.1016/j.ceramint.2023.06.157openalex-snapshot

Exploring interfacial reactions and optical properties of ZBLAN-based phosphor-in-glass color converters via spark plasma sintering for laser-driven lighting

inferred← citeshttps://doi.org/10.1016/j.ceramint.2023.08.320openalex-snapshot

Cr3+-activated NaInSi2O6: An efficient broadband near-infrared phosphor with its applications in LED

inferred← citeshttps://doi.org/10.1016/j.ceramint.2023.10.070openalex-snapshot

Ce3+-based phosphor converter enabling laser lighting to attain both high CRI and high luminous efficacy

inferred← citeshttps://doi.org/10.1016/j.ceramint.2023.11.404openalex-snapshot

Robust high-efficiency LuAG: Ce phosphor-in-silica glass (PiSG) for high-brightness laser lighting

inferred← citeshttps://doi.org/10.1016/j.ceramint.2024.03.280openalex-snapshot

Highly reflective TiO2 layer on AlN substrate: Enabling high quality laser lighting

inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.04.111openalex-snapshot

High-oriented two-dimensional BN reinforced composites with high thermal conductivity via simple vertical method

inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.04.352openalex-snapshot

High efficiency and thermal stability LuAG: Ce3+ converter based on phosphor-in-glass-ceramics for laser-driven lighting

inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.07.036openalex-snapshot

Optical and thermal performances investigation of phosphor-in-glass-film@sapphire based high-brightness laser lighting

inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.08.054openalex-snapshot

A novel PiGF color converter with efficient thermal management for high-quality laser-driven projection display

inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.10.254openalex-snapshot

Laser-driven dual-ceramic converters enabling high‐luminance white light

inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.10.323openalex-snapshot

Impact of Ce3+ concentration and thickness on luminance and chromaticity uniformity of YAG:Ce ceramic color converters for laser lighting

inferred← citeshttps://doi.org/10.1016/j.ceramint.2026.04.196openalex-snapshot

Fourier's law: Unlocking high-brightness laser illumination by a gradient phosphor architecture

inferred← citeshttps://doi.org/10.1016/j.ceramint.2026.06.487openalex-snapshot

Facile fabrication of monolithic integrated YAG:Ce/Al2O3 ceramic modules with improved thermal management and optical performance for phosphor-converted laser lighting

inferred← citeshttps://doi.org/10.1016/j.crhy.2017.12.001openalex-snapshot

Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting

inferred← citeshttps://doi.org/10.1016/j.cryogenics.2026.104460openalex-snapshot

Cryogenic characterization and compact modeling of the 4N25 optocoupler from 30 K to 300 K

inferred← citeshttps://doi.org/10.1016/j.energy.2022.125087openalex-snapshot

Application of flashing blue-red LED to boost microalgae biomass productivity and energy efficiency in continuous photobioreactors

inferred← citeshttps://doi.org/10.1016/j.fmre.2024.03.028openalex-snapshot

Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure

inferred← citeshttps://doi.org/10.1016/j.heliyon.2022.e10193openalex-snapshot

Lanthanoid-doped quaternary garnets as phosphors for high brightness cathodoluminescence-based light sources

inferred← citeshttps://doi.org/10.1016/j.icheatmasstransfer.2015.05.005openalex-snapshot

Thermal and optical investigations of high power LEDs with metal embedded printed circuit boards

inferred← citeshttps://doi.org/10.1016/j.ijleo.2021.168212openalex-snapshot

Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier

inferred← citeshttps://doi.org/10.1016/j.ijleo.2024.171941openalex-snapshot

Efficient and droop-free AlGaN-based UV-C LED using the inverted linearly graded active region and engineered hole source layer

inferred← citeshttps://doi.org/10.1016/j.ijleo.2024.172073openalex-snapshot

Effect of current spreading layer on Internal Quantum efficiency and optical power of flip chip gallium nitride LEDs with circular contacts

inferred← citeshttps://doi.org/10.1016/j.jallcom.2018.08.050openalex-snapshot

Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies

inferred← citeshttps://doi.org/10.1016/j.jallcom.2020.153791openalex-snapshot

Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures

inferred← citeshttps://doi.org/10.1016/j.jallcom.2021.161882openalex-snapshot

All-inorganic high efficiency LuAG:Ce3+ converter based on phosphor-in-glass for laser diode lighting

inferred← citeshttps://doi.org/10.1016/j.jallcom.2024.178153openalex-snapshot

Influence of HIP post-treatment on the microstructure and luminescent properties of SPSed Al2O3−Ce:YAG composite ceramics

inferred← citeshttps://doi.org/10.1016/j.jallcom.2025.178644openalex-snapshot

Novel strategy: Fabrication of phosphor-in-glass via modulation of glass composition for dynamic laser illumination

inferred← citeshttps://doi.org/10.1016/j.jallcom.2025.182569openalex-snapshot

Efficient broadband near-infrared emission via Cr3 + -Yb3+ co-doping in garnet oxides for NIR spectroscopy

inferred← citeshttps://doi.org/10.1016/j.jallcom.2026.190898openalex-snapshot

A novel open photonic conversion and three-dimensional integrated heat dissipation architecture for high-brightness laser lighting applications

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2017.10.018openalex-snapshot

Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN

inferred← citeshttps://doi.org/10.1016/j.jeurceramsoc.2020.05.029openalex-snapshot

Design of a CaAlSiN3:Eu/glass composite film: Facile synthesis, high saturation-threshold and application in high-power laser lighting

inferred← citeshttps://doi.org/10.1016/j.jeurceramsoc.2021.10.035openalex-snapshot

Emitting area limitation via scattering control in phosphor film realizing high-luminance laser lighting

inferred← citeshttps://doi.org/10.1016/j.jeurceramsoc.2023.01.055openalex-snapshot

Ultra-high efficiency green-emitting LuAG: Ce phosphor-in-ceramic applied for high-power laser lighting

inferred← citeshttps://doi.org/10.1016/j.jeurceramsoc.2026.118237openalex-snapshot

Highly crystalline ceramic-composite tricolor phosphor-in-glass film for high-performance laser-driven lighting

inferred← citeshttps://doi.org/10.1016/j.jlumin.2015.08.046openalex-snapshot

Laser excitation of red, green, blue and trichromatic white rare-earth phosphors for solid-state lighting applications

inferred← citeshttps://doi.org/10.1016/j.jlumin.2021.117938openalex-snapshot

Effect of carbon nanotube pattern on the laser lift off and quantum efficiencies of near UV vertical LEDs

inferred← citeshttps://doi.org/10.1016/j.jlumin.2023.120294openalex-snapshot

High efficiency and stable La3Si6N11:Ce phosphor-in-glass film for high power laser lighting

inferred← citeshttps://doi.org/10.1016/j.jlumin.2023.120337openalex-snapshot

Pore-existing phosphor-in-glass film realizing ultra-efficient and uniform laser lighting

inferred← citeshttps://doi.org/10.1016/j.jlumin.2024.120786openalex-snapshot

Unveiling the effect of Ce3+ doping concentration in YAG:Ce single crystals towards high luminance laser lighting

inferred← citeshttps://doi.org/10.1016/j.jlumin.2025.121193openalex-snapshot

YAG:Ce-glass/porous stainless steel composite materials for laser illumination

inferred← citeshttps://doi.org/10.1016/j.jlumin.2026.121773openalex-snapshot

Enhanced performance of InGaN-based green resonant cavity light-emitting diodes with superlattice electron blocking layer

inferred← citeshttps://doi.org/10.1016/j.jlumin.2026.122058openalex-snapshot

Polarization-modulation for intraband tunnelling in Mg-doped p-type multi-quantum barrier electron blocking layers for high-efficiency UVB LEDs

inferred← citeshttps://doi.org/10.1016/j.materresbull.2021.111297openalex-snapshot

Tunable YAG:Ce3+ ceramic phosphors for white laser-diode lighting in transmissive/reflective models

inferred← citeshttps://doi.org/10.1016/j.matlet.2016.05.111openalex-snapshot

Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications

inferred← citeshttps://doi.org/10.1016/j.matlet.2024.137258openalex-snapshot

A phosphor-in-glass film prepared with a novel orange Lu2GdMg2AlSi2O12:Ce3+ phosphor and a cyan BaSi2O2N2:Eu2+ phosphor

inferred← citeshttps://doi.org/10.1016/j.mattod.2020.01.001openalex-snapshot

Comparative studies of optoelectrical properties of prominent PV materials: Halide perovskite, CdTe, and GaAs

inferred← citeshttps://doi.org/10.1016/j.mee.2021.111694openalex-snapshot

Developing a micro-thermography system for thermal characterization of LED packages

inferred← citeshttps://doi.org/10.1016/j.micron.2020.102864openalex-snapshot

Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

inferred← citeshttps://doi.org/10.1016/j.microrel.2020.113792openalex-snapshot

Efficiency droop in green InGaN/GaN light emitting diodes: Degradation mechanisms and initial characteristics

inferred← citeshttps://doi.org/10.1016/j.mseb.2021.115279openalex-snapshot

Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes

inferred← citeshttps://doi.org/10.1016/j.mssp.2023.108057openalex-snapshot

Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications

inferred← citeshttps://doi.org/10.1016/j.mtchem.2024.102090openalex-snapshot

Improved broadband luminescence in Gd2GaSb1-Ta O7:Cr3+,Yb3+ pyrochlore phosphors: Near-infrared spectroscopic applications and dual-mode optical thermometry

inferred← citeshttps://doi.org/10.1016/j.nanoen.2017.11.047openalex-snapshot

Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3

inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.105149openalex-snapshot

Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system

inferred← citeshttps://doi.org/10.1016/j.omx.2024.100329openalex-snapshot

Two-layered Lu3Al5O12:Ce/ Y3Al5O12:Ce composite phosphor converter for white light-emitting diode devices

inferred← citeshttps://doi.org/10.1016/j.optlaseng.2021.106635openalex-snapshot

Monitoring the health of laser-driven phosphor-converted white light source using spectral interference technique

inferred← citeshttps://doi.org/10.1016/j.optlastec.2021.107223openalex-snapshot

White light emission from Sm-doped YAG ceramic controlled by the excitation wavelengths

inferred← citeshttps://doi.org/10.1016/j.optlastec.2026.115067openalex-snapshot

Wide quantum wells enable suppressed thermal droop in AlGaInP-based red micro-LEDs via synergistic carrier confinement

inferred← citeshttps://doi.org/10.1016/j.optmat.2017.10.049openalex-snapshot

Design of laser-driven SiO2-YAG:Ce composite thick film: Facile synthesis, robust thermal performance, and application in solid-state laser lighting

inferred← citeshttps://doi.org/10.1016/j.optmat.2024.115397openalex-snapshot

Fabrication of Al2O3– Ce:(Y, Tb)3 (Al, Mn)5O12 composite ceramic phosphors for high color rendering white LED/LD illumination

inferred← citeshttps://doi.org/10.1016/j.optmat.2025.116973openalex-snapshot

Enhanced luminous exitance and saturation threshold of Y3Al5O12:Ce phosphor-in-glass films via incorporation of highly thermally conductive boron nitride particles

inferred← citeshttps://doi.org/10.1016/j.pecs.2016.05.003openalex-snapshot

Heat and fluid flow in high-power LED packaging and applications

inferred← citeshttps://doi.org/10.1016/j.physb.2022.414124openalex-snapshot

A cost-effective way of sintering Ce3+:YAG based ceramic phosphors for high power/high brightness phosphor-converted solid state light sources

inferred← citeshttps://doi.org/10.1016/j.physb.2023.414865openalex-snapshot

Designing p-region of AlGaN ultraviolet light-emitting diodes for the improved performance

inferred← citeshttps://doi.org/10.1016/j.physe.2018.10.019openalex-snapshot

Improved optoelectronic performance of green light-emitting diodes by employing GaAlInN quantum wells without electron blocking layer

inferred← citeshttps://doi.org/10.1016/j.pmatsci.2026.101817openalex-snapshot

Advanced phosphor converters for laser-driven light sources: a review

inferred← citeshttps://doi.org/10.1016/j.proeng.2015.10.153openalex-snapshot

Design, Simulations, and Optimizations of Mid-infrared Multiple Quantum Well LEDs

inferred← citeshttps://doi.org/10.1016/j.revmat.2025.100092openalex-snapshot

Ceramic phosphors for laser-driven lighting

inferred← citeshttps://doi.org/10.1016/j.rinp.2021.104353openalex-snapshot

Numerical investigation into optical and electronic performance of crystal orientation-dependent InGaAs/InP near-infrared laser

inferred← citeshttps://doi.org/10.1016/j.rinp.2022.105449openalex-snapshot

Size effects of AlGaInP red vertical micro-LEDs on silicon substrate

inferred← citeshttps://doi.org/10.1016/j.spmi.2015.08.026openalex-snapshot

The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters

inferred← citeshttps://doi.org/10.1016/j.spmi.2015.09.025openalex-snapshot

Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers

inferred← citeshttps://doi.org/10.1016/j.spmi.2016.05.013openalex-snapshot

A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement

inferred← citeshttps://doi.org/10.1016/j.spmi.2016.05.037openalex-snapshot

Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes

inferred← citeshttps://doi.org/10.1016/j.spmi.2017.01.049openalex-snapshot

Experimentally study electron overflow from quantum wells into p-side GaN and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

inferred← citeshttps://doi.org/10.1016/j.spmi.2017.11.046openalex-snapshot

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

inferred← citeshttps://doi.org/10.1016/j.spmi.2018.07.037openalex-snapshot

On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes

inferred← citeshttps://doi.org/10.1016/j.spmi.2019.106271openalex-snapshot

Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes

inferred← citeshttps://doi.org/10.1016/j.sse.2016.10.038openalex-snapshot

Device characteristics and thermal analysis of GaN-based vertical light-emitting diodes with different types of packages

inferred← citeshttps://doi.org/10.1016/j.sse.2023.108775openalex-snapshot

Performance and reliability of state-of-the-art commercial UVC light emitting diodes

inferred← citeshttps://doi.org/10.1016/j.surfin.2022.101799openalex-snapshot

Mechanism and quantum efficiency of yellow emission at the organic-inorganic F8T2/p-GaN interface

inferred← citeshttps://doi.org/10.1016/j.surfin.2026.109167openalex-snapshot

Comprehensive study of current-density-dependent degradation in AlGaInP/GaInP based red micro-LEDs

inferred← citeshttps://doi.org/10.1016/j.tca.2025.180103openalex-snapshot

Polarization-driven thermal enhancement in InGaN semiconductors: Diffusivity modifications and implications for high-power device applications

inferred← citeshttps://doi.org/10.1021/acs.cgd.6c00678openalex-snapshot

Promoting Photogenerated Hole Injection into Deep-Ultraviolet LEDs through a Reversed-Biased Selectively-Area-Grown n-GaN/i-GaN/p-GaN PIN Diode

inferred← citeshttps://doi.org/10.1021/acs.jpcc.2c01679openalex-snapshot

Challenges and Strategies to Design Phosphors for Future White Light Emitting Diodes

inferred← citeshttps://doi.org/10.1021/acs.jpcc.7b04179openalex-snapshot

Two Regimes of Carrier Diffusion in Vapor-Deposited Lead-Halide Perovskites

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