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Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssa.200673567openalex-snapshot
Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
inferredcites →https://doi.org/10.1002/pssa.201026149openalex-snapshot
Efficiency droop in nitride‐based light‐emitting diodes
inferredcites →https://doi.org/10.1002/pssr.201004147openalex-snapshot
The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes
inferredcites →https://doi.org/10.1007/s11082-011-9437-zopenalex-snapshot
Electron leakage effects on GaN-based light-emitting diodes
inferredcites →https://doi.org/10.1021/nl0487774openalex-snapshot
Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
inferredcites →https://doi.org/10.1021/nl051689eopenalex-snapshot
Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
inferredcites →https://doi.org/10.1021/nl101027xopenalex-snapshot
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1021/nl103649dopenalex-snapshot
Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
inferredcites →https://doi.org/10.1021/nl104536xopenalex-snapshot
p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
inferredcites →https://doi.org/10.1038/nmat2037openalex-snapshot
Complete composition tunability of InGaN nanowires using a combinatorial approach
inferredcites →https://doi.org/10.1063/1.1289915openalex-snapshot
InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K
inferredcites →https://doi.org/10.1063/1.1570515openalex-snapshot
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
inferredcites →https://doi.org/10.1063/1.2188589openalex-snapshot
Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy
inferredcites →https://doi.org/10.1063/1.2721133openalex-snapshot
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
inferredcites →https://doi.org/10.1063/1.2722731openalex-snapshot
Microscopic origins of surface states on nitride surfaces
inferredcites →https://doi.org/10.1063/1.2785135openalex-snapshot
Auger recombination in InGaN measured by photoluminescence
inferredcites →https://doi.org/10.1063/1.2800290openalex-snapshot
Origin of efficiency droop in GaN-based light-emitting diodes
inferredcites →https://doi.org/10.1063/1.2801704openalex-snapshot
Defect related issues in the “current roll-off” in InGaN based light emitting diodes
inferredcites →https://doi.org/10.1063/1.2963029openalex-snapshot
Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
inferredcites →https://doi.org/10.1063/1.2988324openalex-snapshot
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
inferredcites →https://doi.org/10.1063/1.3081059openalex-snapshot
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
inferredcites →https://doi.org/10.1063/1.3153508openalex-snapshot
Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
inferredcites →https://doi.org/10.1063/1.3216578openalex-snapshot
Rate equation analysis of efficiency droop in InGaN light-emitting diodes
inferredcites →https://doi.org/10.1063/1.3266014openalex-snapshot
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
inferredcites →https://doi.org/10.1063/1.3266520openalex-snapshot
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
inferredcites →https://doi.org/10.1063/1.3276066openalex-snapshot
Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers
inferredcites →https://doi.org/10.1063/1.3284660openalex-snapshot
High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111)
inferredcites →https://doi.org/10.1063/1.3443734openalex-snapshot
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
inferredcites →https://doi.org/10.1063/1.3449557openalex-snapshot
Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
inferredcites →https://doi.org/10.1063/1.3460271openalex-snapshot
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
inferredcites →https://doi.org/10.1063/1.3465658openalex-snapshot
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
inferredcites →https://doi.org/10.1063/1.3493654openalex-snapshot
Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
inferredcites →https://doi.org/10.1063/1.3525605openalex-snapshot
A numerical study of Auger recombination in bulk InGaN
inferredcites →https://doi.org/10.1063/1.3588201openalex-snapshot
InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
inferredcites →https://doi.org/10.1063/1.3618673openalex-snapshot
On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes
inferredcites →https://doi.org/10.1088/0022-3727/41/16/165105openalex-snapshot
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
inferredcites →https://doi.org/10.1088/0268-1242/26/1/014022openalex-snapshot
Ballistic transport in InGaN-based LEDs: impact on efficiency
inferredcites →https://doi.org/10.1088/0957-4484/22/44/445202openalex-snapshot
Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
inferredcites →https://doi.org/10.1103/physrevb.80.115324openalex-snapshot
Atomic and electronic structure of the nonpolar GaN(11¯00) surface
inferredcites →https://doi.org/10.1109/jproc.2007.900897openalex-snapshot
Quantum-Dot Optoelectronic Devices
inferredcites →https://doi.org/10.1109/jqe.2004.826437openalex-snapshot
Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance
inferredcites →https://doi.org/10.1109/lpt.2003.818240openalex-snapshot
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature
inferredcites →https://doi.org/10.1109/ted.2008.923561openalex-snapshot
Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes
inferredcites →https://doi.org/10.1143/jjap.43.l1524openalex-snapshot
InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
inferredcites →https://doi.org/10.1364/oe.17.017227openalex-snapshot
Strong green photoluminescence from InxGa_1-xN/GaN nanorod arrays
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Diffusion injected multi-quantum well light-emitting diode structure
inferred← citeshttps://doi.org/10.1063/1.4869336openalex-snapshot
Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography
inferred← citeshttps://doi.org/10.1063/1.4907568openalex-snapshot
High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes
inferred← citeshttps://doi.org/10.1063/1.4930593openalex-snapshot
Tunnel junction enhanced nanowire ultraviolet light emitting diodes
inferred← citeshttps://doi.org/10.1063/1.4940748openalex-snapshot
Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls
inferred← citeshttps://doi.org/10.1063/1.4941239openalex-snapshot
Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures
inferred← citeshttps://doi.org/10.1063/1.4964403openalex-snapshot
Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer
inferred← citeshttps://doi.org/10.1063/1.4973995openalex-snapshot
GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency
inferred← citeshttps://doi.org/10.1063/1.5088653openalex-snapshot
Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam
inferred← citeshttps://doi.org/10.1063/1.5091517openalex-snapshot
Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes
inferred← citeshttps://doi.org/10.1063/5.0018076openalex-snapshot
A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure
inferred← citeshttps://doi.org/10.1063/5.0044706openalex-snapshot
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
inferred← citeshttps://doi.org/10.1063/5.0059701openalex-snapshot
High efficiency InGaN nanowire tunnel junction green micro-LEDs
inferred← citeshttps://doi.org/10.1063/5.0111026openalex-snapshot
Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles
inferred← citeshttps://doi.org/10.1080/00084433.2025.2578081openalex-snapshot
Review on white-light-emitting diodes based on nanomaterials
inferred← citeshttps://doi.org/10.1080/02670836.2016.1192765openalex-snapshot
Group III-nitride nanowires
inferred← citeshttps://doi.org/10.1080/15980316.2023.2282937openalex-snapshot
III-nitride nanowires for emissive display technology
inferred← citeshttps://doi.org/10.1088/0022-3727/48/46/463001openalex-snapshot
III–V nanowires and nanowire optoelectronic devices
inferred← citeshttps://doi.org/10.1088/0256-307x/36/2/027802openalex-snapshot
Effect of Nanorod Diameters on Optical Properties of GaN-Based Dual-Color Nanorod Arrays
inferred← citeshttps://doi.org/10.1088/0268-1242/29/8/085009openalex-snapshot
Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes
inferred← citeshttps://doi.org/10.1088/0268-1242/30/8/085001openalex-snapshot
Hourglass-graded heterostructures as a possible route towards extremely efficient light emitting diodes
inferred← citeshttps://doi.org/10.1088/0957-4484/23/19/194012openalex-snapshot
Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon
inferred← citeshttps://doi.org/10.1088/0957-4484/24/34/345201openalex-snapshot
Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1−xN nanowire based light emitting diodes
inferred← citeshttps://doi.org/10.1088/0957-4484/24/40/405303openalex-snapshot
Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography
inferred← citeshttps://doi.org/10.1088/0957-4484/25/43/435203openalex-snapshot
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
inferred← citeshttps://doi.org/10.1088/0957-4484/26/34/344002openalex-snapshot
Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy
inferred← citeshttps://doi.org/10.1088/0957-4484/26/46/465203openalex-snapshot
Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment
inferred← citeshttps://doi.org/10.1088/0957-4484/27/20/205205openalex-snapshot
A single blue nanorod light emitting diode
inferred← citeshttps://doi.org/10.1088/1361-6463/ac4185openalex-snapshot
Boosted ultraviolet photodetection of AlGaN quantum-disk nanowires via rational surface passivation
inferred← citeshttps://doi.org/10.1088/1674-1056/24/6/068506openalex-snapshot
Progress and prospects of GaN-based LEDs using nanostructures
inferred← citeshttps://doi.org/10.1088/1674-4926/41/3/032301openalex-snapshot
High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots
inferred← citeshttps://doi.org/10.1103/physrevapplied.8.014032openalex-snapshot
Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency
inferred← citeshttps://doi.org/10.1109/ias.2013.6682537openalex-snapshot
GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management
inferred← citeshttps://doi.org/10.1109/ipcon.2012.6358676openalex-snapshot
Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon
inferred← citeshttps://doi.org/10.1109/ipcon.2016.7831056openalex-snapshot
Monolithic III-nitride nanowire detectors on silicon
inferred← citeshttps://doi.org/10.1109/jdt.2016.2536754openalex-snapshot
Red-Phosphor-Dot-Doped Array in Mirror-Surface Substrate Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1109/jphot.2013.2245881openalex-snapshot
Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells
inferred← citeshttps://doi.org/10.1109/jphot.2014.2356504openalex-snapshot
Temperature Droop Characteristics of Internal Efficiency in $\hbox{In}_{x}\hbox{Ga}_{1-x}\hbox{N/GaN}$ Quantum Well Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1109/jphot.2018.2872035openalex-snapshot
Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures
inferred← citeshttps://doi.org/10.1109/jphot.2019.2926231openalex-snapshot
Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
inferred← citeshttps://doi.org/10.1109/jphot.2024.3511344openalex-snapshot
Design Principles and Performance Limitation of InGaN Nanowire Photonic Crystal Micro-LEDs
inferred← citeshttps://doi.org/10.1109/jqe.2014.2317732openalex-snapshot
On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes
inferred← citeshttps://doi.org/10.1109/jqe.2014.2325013openalex-snapshot
Green-Light Nanocolumn Light Emitting Diodes With Triangular-Lattice Uniform Arrays of InGaN-Based Nanocolumns
inferred← citeshttps://doi.org/10.1109/jqe.2022.3151965openalex-snapshot
III-Nitride Nanostructures for High Efficiency Micro-LEDs and Ultraviolet Optoelectronics
inferred← citeshttps://doi.org/10.1109/lpt.2017.2752716openalex-snapshot
Infrared Absorption at 300 K in InGaN/GaN Disk-in-Nanowire Arrays Grown on (001) Silicon
inferred← citeshttps://doi.org/10.1109/miel58498.2023.10315936openalex-snapshot
III-Nitride Nanowire LEDs for Enhanced Light Technology
inferred← citeshttps://doi.org/10.1109/mnano.2019.2891370openalex-snapshot
Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis
inferred← citeshttps://doi.org/10.1109/nusod.2016.7547051openalex-snapshot
InGaN/GaN nanowire LEDs and lasers
inferred← citeshttps://doi.org/10.1109/ojcoms.2024.3368202openalex-snapshot
Precise Frequency Response of COTS LED for VLC Using Internal Quantum Efficiency Metric
inferred← citeshttps://doi.org/10.1109/pvsc.2013.6744965openalex-snapshot
Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell
inferred← citeshttps://doi.org/10.1109/pvsc.2015.7355923openalex-snapshot
Optical properties of InN-based photodetection devices
inferred← citeshttps://doi.org/10.1109/sslchina.2013.7177373openalex-snapshot
Influence of SiO2 or SiNx passivation on the electrical properties of GaN-based nanorod LEDs
inferred← citeshttps://doi.org/10.1109/ted.2015.2391117openalex-snapshot
Diffusion Injection in a Buried Multiquantum Well Light-Emitting Diode Structure
inferred← citeshttps://doi.org/10.1109/tia.2014.2360984openalex-snapshot
GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management
inferred← citeshttps://doi.org/10.1116/1.4865914openalex-snapshot
Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1116/1.4977174openalex-snapshot
Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1117/1.jnp.7.074599openalex-snapshot
Review of recent progress of III-nitride nanowire lasers
inferred← citeshttps://doi.org/10.1117/1.jnp.8.083095openalex-snapshot
Comparing directed efficiency of III-nitride nanowire light-emitting diodes
inferred← citeshttps://doi.org/10.1117/12.2077549openalex-snapshot
Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure
inferred← citeshttps://doi.org/10.1117/12.2084777openalex-snapshot
High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes
inferred← citeshttps://doi.org/10.1117/12.2213741openalex-snapshot
Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire
inferred← citeshttps://doi.org/10.1117/12.2303543openalex-snapshot
Phosphor-free III-nitride nanowire white-light-emitting diodes for visible light communication
inferred← citeshttps://doi.org/10.1149/2.0292001jssopenalex-snapshot
Review—Recent Advances and Challenges in Indium Gallium Nitride (In x Ga 1-x N) Materials for Solid State Lighting
inferred← citeshttps://doi.org/10.1186/s11671-021-03576-1openalex-snapshot
Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells
inferred← citeshttps://doi.org/10.1186/s40539-015-0024-yopenalex-snapshot
Influence of electron distribution on efficiency droop for GaN-based light emitting diodes
inferred← citeshttps://doi.org/10.1201/9781315364407-17openalex-snapshot
Chapter 13: III-Nitride Nanowires and Their Laser, LED, and Photovoltaic Applications
inferred← citeshttps://doi.org/10.1364/ao.394149openalex-snapshot
Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
inferred← citeshttps://doi.org/10.1364/ao.458463openalex-snapshot
High-efficiency InGaN blue LEDs with reduced positive sheet polarization
inferred← citeshttps://doi.org/10.1364/josab.399773openalex-snapshot
Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer
inferred← citeshttps://doi.org/10.1364/oe.21.003547openalex-snapshot
Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching
inferred← citeshttps://doi.org/10.1364/oe.22.00a790openalex-snapshot
Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods
inferred← citeshttps://doi.org/10.1364/oe.23.00a650openalex-snapshot
InGaN/GaN nanowires grown on SiO_2 and light emitting diodes with low turn on voltages
inferred← citeshttps://doi.org/10.1364/oe.25.030494openalex-snapshot
Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics
inferred← citeshttps://doi.org/10.1364/oe.28.000665openalex-snapshot
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes
inferred← citeshttps://doi.org/10.1364/oe.396788openalex-snapshot
Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures
inferred← citeshttps://doi.org/10.1364/oe.487475openalex-snapshot
Identifying the role of carrier overflow and injection current efficiency in a GaN-based micro-LED efficiency droop model
inferred← citeshttps://doi.org/10.1364/ome.380409openalex-snapshot
Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
inferred← citeshttps://doi.org/10.1364/ome.4.002565openalex-snapshot
Enhanced photocurrent of a nitride–based photodetector with InN dot-like structures
inferred← citeshttps://doi.org/10.1364/prj.450465openalex-snapshot
N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
inferred← citeshttps://doi.org/10.1364/prj.473318openalex-snapshot
Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale
inferred← citeshttps://doi.org/10.1515/nanoph-2019-0328openalex-snapshot
Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple‐quantum‐shells nanowires
inferred← citeshttps://doi.org/10.1557/opl.2013.619openalex-snapshot
Hexagonal Pyramids Shaped GaN Light Emitting Diodes Array by N-polar Wet Etching
inferred← citeshttps://doi.org/10.21203/rs.3.rs-6581064/v1openalex-snapshot
Advancements in Structural Design for Enhanced Performance in AlGaN Deep Ultraviolet Micro-LEDs
inferred← citeshttps://doi.org/10.2174/9789815238242124010005openalex-snapshot
Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes
inferred← citeshttps://doi.org/10.2298/fuee2103393vopenalex-snapshot
Controlled electron leakage in electron blocking layer free InGaN/GaN nanowire light-emitting diodes
inferred← citeshttps://doi.org/10.25781/kaust-3ypiaopenalex-snapshot
Molecular Beam Epitaxy-Grown InGaN Nanowires and Nanomushrooms for Solid State Lighting
inferred← citeshttps://doi.org/10.3390/cryst13121623openalex-snapshot
Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency
inferred← citeshttps://doi.org/10.3390/mi10080492openalex-snapshot
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
inferred← citeshttps://doi.org/10.3390/nano11061449openalex-snapshot
Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
inferred← citeshttps://doi.org/10.3390/photonics12080752openalex-snapshot
Superlattice Structure for High Performance AlGaN Deep Ultraviolet LEDs
inferred← citeshttps://doi.org/10.35848/1347-4065/ac671bopenalex-snapshot
Multi-colour GaN-based LEDs with trench structure
inferred← citeshttps://doi.org/10.56053/4.1.29openalex-snapshot
Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering
inferred← citeshttps://doi.org/10.70675/19b38921zb54fz4915z984dz1692a9858343openalex-snapshot
Nouveaux matériaux pour des LED blanches éco-efficientes : hétérostructures à base de nanofils de ZnO et luminophores d'aluminoborates sans terres rares
inferred← citeshttps://doi.org/10.7567/1347-4065/ab07aaopenalex-snapshot
Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy
inferred← citeshttps://doi.org/10.7567/apex.8.042101openalex-snapshot
InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes
inferred← citeshttps://doi.org/10.7567/jjap.53.062101openalex-snapshot
Analysis of trap and its impact on InGaN-based blue light-emitting diodes using current-transient methodology
inferred← citeshttps://doi.org/10.7567/jjap.53.06je14openalex-snapshot
Improved internal quantum efficiency of GaN-based light emitting diodes using p-AlGaN trench in multi-quantum well
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