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Physics of Semiconductor Devices
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inferred← citeshttps://doi.org/10.1002/pssa.200724035openalex-snapshot
Thermionic and tunneling transport mechanisms in graphene field‐effect transistors
inferred← citeshttps://doi.org/10.1002/pssa.200779426openalex-snapshot
Electrodeposition and impedance spectroscopy characterization of ZnO nanowire arrays
inferred← citeshttps://doi.org/10.1002/pssa.200824033openalex-snapshot
New modes of FFT impedance spectroscopy applied to semiconductor pore etching and materials characterization
inferred← citeshttps://doi.org/10.1002/pssa.200824268openalex-snapshot
Rapid thermal annealing effects on electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111)
inferred← citeshttps://doi.org/10.1002/pssa.200824290openalex-snapshot
In‐situ boron doping of chemical‐bath deposited CdS thin films
inferred← citeshttps://doi.org/10.1002/pssa.200825183openalex-snapshot
Optical beam induced current measurements: principles and applications to SiC device characterization
inferred← citeshttps://doi.org/10.1002/pssa.200925042openalex-snapshot
Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film
inferred← citeshttps://doi.org/10.1002/pssa.200925053openalex-snapshot
Suppressed surface‐recombination structure and surface passivation for improving current gain of 4H‐SiC BJTs
inferred← citeshttps://doi.org/10.1002/pssa.200925188openalex-snapshot
Extreme temperature 6H‐SiC JFET integrated circuit technology
inferred← citeshttps://doi.org/10.1002/pssa.200925254openalex-snapshot
Design, process, and performance of all‐epitaxial normally‐off SiC JFETs
inferred← citeshttps://doi.org/10.1002/pssa.200925443openalex-snapshot
ZnO‐based photodetector with internal photocurrent gain
inferred← citeshttps://doi.org/10.1002/pssa.201084175openalex-snapshot
Interface electrical properties of Fe3O4/MgO/GaAs(100) epitaxial spin contacts
inferred← citeshttps://doi.org/10.1002/pssa.201228733openalex-snapshot
Fabrication of fast and sensitive IR‐detectors based on PbS quantum dots passivated by organic ligands
inferred← citeshttps://doi.org/10.1002/pssa.201300151openalex-snapshot
Defect engineering in germanium
inferred← citeshttps://doi.org/10.1002/pssa.201300302openalex-snapshot
Measuring surface state density and energy distribution in InAs nanowires
inferred← citeshttps://doi.org/10.1002/pssa.201330429openalex-snapshot
Model experiments on growth modes and interface electronics of CuInS2 : Ultrathin epitaxial films on GaAs(100) substrates
inferred← citeshttps://doi.org/10.1002/pssa.201330432openalex-snapshot
Electric potential distributions in space charge regions of molecular organic adsorbates using a simplified distributed states model
inferred← citeshttps://doi.org/10.1002/pssa.201431409openalex-snapshot
Cobalt phthalocyanine-based submicrometric field-effect transistors
inferred← citeshttps://doi.org/10.1002/pssa.201532187openalex-snapshot
Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures
inferred← citeshttps://doi.org/10.1002/pssa.201900358openalex-snapshot
Tunable Organic Polymer/Inorganic Silicon Diode Using an Ionic Liquid Gel Gate Dielectric
inferred← citeshttps://doi.org/10.1002/pssb.200844163openalex-snapshot
Enhanced Raman scattering in grooved silicon matrix
inferred← citeshttps://doi.org/10.1002/pssb.201046264openalex-snapshot
Accelerating GW calculations with optimal polarizability basis
inferred← citeshttps://doi.org/10.1002/pssb.201147266openalex-snapshot
Carrier‐density dependence of the hole mobility in doped and undoped regioregular poly(3‐hexylthiophene)
inferred← citeshttps://doi.org/10.1002/pssb.201248080openalex-snapshot
Monte Carlo transport simulation of velocity undershoot in zinc blende and wurtzite InN
inferred← citeshttps://doi.org/10.1002/pssb.201248520openalex-snapshot
High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films
inferred← citeshttps://doi.org/10.1002/pssb.201248534openalex-snapshot
Vibrational spectroscopic studies on pure and metal‐covered metal oxide surfaces
inferred← citeshttps://doi.org/10.1002/pssb.201400196openalex-snapshot
Influence of electron irradiation on p-n junctions in SiGe superlattices
inferred← citeshttps://doi.org/10.1002/pssb.201451581openalex-snapshot
Electrical characteristics of a‐plane low‐Mg‐doped p‐GaN Schottky contacts
inferred← citeshttps://doi.org/10.1002/pssc.200776578openalex-snapshot
Analysis of the hysteretic behavior of silicon nanowire transistors
inferred← citeshttps://doi.org/10.1002/pssc.200776822openalex-snapshot
Characterisation of InAs‐based epilayers by FTIR spectroscopy
inferred← citeshttps://doi.org/10.1002/pssc.200776825openalex-snapshot
Nanoparticle semiconductor compositions in the miscibility gap
inferred← citeshttps://doi.org/10.1002/pssc.200778735openalex-snapshot
AlxGa1–xN‐based avalanche photodiodes with high reproducible avalanche gain
inferred← citeshttps://doi.org/10.1002/pssc.200779179openalex-snapshot
Fabrication and characteristics of a Pt/MgxZn1–xO Schottky photodiode on a ZnO single crystal
inferred← citeshttps://doi.org/10.1002/pssc.200779185openalex-snapshot
n‐Channel GaAs MESFETs for cryogenic application
inferred← citeshttps://doi.org/10.1002/pssc.200779246openalex-snapshot
Electro‐optic property of ZnO:Mn epitaxial films
inferred← citeshttps://doi.org/10.1002/pssc.200779301openalex-snapshot
High speed germanium detectors on Si
inferred← citeshttps://doi.org/10.1002/pssc.200878881openalex-snapshot
The contact characteristics of Al p‐GaSe Schottky diode
inferred← citeshttps://doi.org/10.1002/pssc.200880337openalex-snapshot
THz measurements of the optical response in a two‐dimensional electron gas
inferred← citeshttps://doi.org/10.1002/pssc.200880857openalex-snapshot
I‐V and C‐V characteristics of rare‐earth‐metal/p‐GaN Schottky contacts
inferred← citeshttps://doi.org/10.1002/pssc.200982404openalex-snapshot
Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures
inferred← citeshttps://doi.org/10.1002/pssc.200982477openalex-snapshot
Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high‐k gate dielectrics
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