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Capacitance-voltage Profiling Techniques for Characterization of Semiconductor Materials and Devices

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/b117561openalex-extracted

Physics of Semiconductor Devices

inferredcites →https://doi.org/10.1016/0038-1101(90)90190-popenalex-extracted

Physical parameter extraction by inverse device modelling: Application to one- and two-dimensional doping profiling

inferredcites →https://doi.org/10.1109/smicnd.2007.4519765openalex-extracted

Calculation of the Depletion Region Width and Barrier Capacitance of Diffused Semiconductor Junctions with Application to Reach-Through Breakdown Voltage of Semiconductor Devices with Diffused Base

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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WITHDRAWN: Anomalous current–voltage and impedance behaviour in heterojunction diode

inferred← citeshttps://doi.org/10.1016/j.matpr.2022.04.312openalex-snapshot

Anomalous current–voltage and impedance behaviour in heterojunction diode

inferred← citeshttps://doi.org/10.1016/j.mee.2019.04.011openalex-snapshot

Effects of the resistivity of AZO film on the IV and CV characteristics of AZO/p-Si heterojunction

inferred← citeshttps://doi.org/10.1016/j.nima.2016.06.101openalex-snapshot

Neutron irradiation study of silicon photomultipliers from different vendors

inferred← citeshttps://doi.org/10.1016/j.tsf.2018.02.034openalex-snapshot

The effect of different radio-frequency powers on characteristics of carbon-titanium nanocomposite thin films prepared by reactive sputtering

inferred← citeshttps://doi.org/10.1038/s41598-025-95015-9openalex-snapshot

Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

inferred← citeshttps://doi.org/10.1038/s41699-022-00288-7openalex-snapshot

Charge transfer induced symmetry breaking in GaN/Bi2Se3 topological heterostructure device

inferred← citeshttps://doi.org/10.1063/5.0274708openalex-snapshot

GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors

inferred← citeshttps://doi.org/10.1109/ted.2025.3586256openalex-snapshot

Localized GaN Cap Etching With Gate-Recessed Structure for Enhanced High-PAE Performance and Trap Analysis in 0.15- μ m AlGaN/GaN HEMTs

inferred← citeshttps://doi.org/10.1371/journal.pone.0161736openalex-snapshot

Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

inferred← citeshttps://doi.org/10.5525/gla.thesis.74278openalex-snapshot

Thermal management and humidity based prognostics of high-power LED packages

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